KR20040036534A - Resist coating method and appara tus - Google Patents

Abstract

PURPOSE: A resist coating method and apparatus are provided to improve the uniformity of a resist layer by restraining the resist layer from moving during a drying process using a clearance between independent coating regions. CONSTITUTION: A plurality of independent coating regions(E) are defined on a substrate(G). A clearance(d) exists between the coating regions. A resist solution is coated on the coating regions. A drying process is performed for the resultant structure under reduced pressure. At this time, the resist has a uniform thickness within each coating region because the clearance prevents the resist from flowing.

Description

Resist coating method and resist coating apparatus {RESIST COATING METHOD AND APPARA TUS}

The present invention relates to a resist coating method and apparatus for applying a resist liquid to a substrate to be processed in a photolithography step.

Background Art Conventionally, in the photolithography process in the manufacturing process of LCDs and semiconductor devices, so-called spin coating methods have been frequently used to apply a resist liquid onto a substrate to be processed (a glass substrate, a semiconductor wafer, etc.) (for example, For example, refer patent document 1). However, the spin coating method spins the substrate to be processed at a considerably high speed, so that a large amount of the resist liquid is scattered to the outside of the substrate by centrifugal force, resulting in waste and causing particles. In particular, the larger the size of the substrate, the more not only the above-mentioned problem becomes more prominent, but also the problem that the turbulence of the air is caused to occur due to the rapid circumferential velocity at the outer periphery of the substrate during spin rotation, which causes the film thickness variation of the resist film. .

Therefore, in recent years, as a resist coating method which is advantageous for the enlargement of the substrate, by continuously discharging the resist liquid to a thin diameter while moving or scanning the resist nozzles to the upper side of the substrate, it is possible to achieve a desired film thickness on the substrate without requiring high-speed rotation. The technique (spinless method) which made a resist liquid apply | coat is spread (for example, refer patent document 2 and patent document 3).

[Patent Document 1]

Japanese Patent Application Laid-Open No. 8-255745 (pages 4 to 6, FIG. 2)

[Patent Document 2]

Japanese Patent Laid-Open No. 2001-162207 (4th surface, FIG. 2, FIG. 3)

[Patent Document 3]

Japanese Patent Laid-Open No. 10-76207 (page 3-4, Fig. 1)

In the conventional spinless method, the coating is applied so that the resist liquid is accumulated on the entire surface to be treated of the substrate. According to this method, however, even when the resist liquid is applied to the substrate with a substantially constant film thickness, the resist liquid moves randomly on the substrate during the subsequent drying treatment, that is, under reduced pressure drying or prebaking, so that the film thickness is uneven after drying. There may be a film. There is also a problem that the time required for drying the resist liquid is long.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and provides a resist coating method and a resist coating apparatus for preventing the resist liquid applied onto a substrate to be processed from moving during the drying process and ensuring the film thickness uniformity of the resist film. It aims to provide.

Another object of the present invention is to provide a resist coating method and a resist coating apparatus which can reduce the consumption of resist liquid.

Another object of the present invention is to provide a resist coating method and a resist coating apparatus which shorten the time required for drying a resist liquid applied onto a substrate.

1 is a plan view showing the configuration of a coating and developing treatment system to which the coating method and the coating apparatus of the present invention can be applied.

FIG. 2 is a side view illustrating a configuration of a thermal processing unit in the coating and developing treatment system of FIG. 1.

FIG. 3 is a flowchart showing a processing procedure in the coating and developing processing system of FIG. 1.

FIG. 4 is a plan view showing the configuration of main parts of a coating system processing unit group in the coating and developing processing system of FIG. 1.

FIG. 5 is a side view showing the configuration of main parts of a coating system processing unit group in the coating and developing processing system of FIG. 1.

6 is a perspective view showing the configuration of a syringe port in the resist coating unit of one embodiment.

7 is a longitudinal cross-sectional view showing an example of the configuration of a resist nozzle head in the resist coating unit of the embodiment.

8 is a block diagram showing a configuration example of a control unit for controlling the resist liquid discharge operation of the resist nozzle head in the embodiment.

9 is a schematic plan view schematically showing one step of the resist coating treatment in the first embodiment.

Fig. 10 is a schematic plan view schematically showing one step of the resist coating process in the first embodiment.

Fig. 11 is a schematic plan view schematically showing a state when the resist coating process in the first embodiment is finished.

12 is a schematic plan view schematically showing a modification of the resist coating pattern in the first embodiment.

FIG. 13 is a schematic plan view schematically showing a modification of the resist coating pattern in the first embodiment. FIG.

Fig. 14 is a schematic plan view schematically showing the configuration of the array substrate of the TFT-LCD in the second embodiment.

Fig. 15 is a schematic plan view showing a resist coating pattern in the second embodiment.

Fig. 16 is a schematic cross sectional view showing a photolithography step in the second embodiment.

17 is a schematic cross-sectional view showing a photolithography step in a third embodiment.

FIG. 18 is a schematic plan view showing a configuration in which drying means (heater) is provided in the resist coating unit of the embodiment. FIG.

Fig. 19 is a schematic side view showing a configuration in which drying means (heater) is provided in the resist coating unit of the embodiment.

<Explanation of symbols for the main parts of the drawings>

82: resist coating unit (CT) 138: stage

144: syringe hole 154: resist nozzle head

156: resist supply pipe 160: nozzle

162: jet injection unit 164: setting input unit

166: host computer 168: nozzle controller

170: heater

In order to achieve the above object, the resist coating method of the present invention is a resist coating method for applying a resist liquid onto a substrate to be processed in a photolithography step, wherein a plurality of coating areas substantially separated and independent from the substrate are set. And a step of applying a resist liquid to the substrate with respect to the application region.

In addition, the resist coating apparatus of the present invention comprises a resist nozzle head formed by arranging a plurality of nozzle portions configured to independently control the resist liquid ejection operation at a predetermined interval, and the resist nozzle head relative to the substrate to be processed. In the resist nozzle head so as to apply a resist liquid to the substrate, the scanning means for scanning and moving, a coating area setting means for setting a plurality of coating areas substantially separated and independent on the substrate, and the coating area for the substrate. And resist liquid ejecting control means for controlling the resist liquid ejecting operation of the nozzle portion.

According to the present invention, since the resist liquid is applied only to a discrete coating area in the surface to be processed on the substrate, and the resist liquid is not applied to other areas, the resist liquid on the substrate is shaken after application, for example, during the drying process. Even if it moves, it restrict | limits in an application | coating area | region, it does not generate power until the whole movement and return, and the film thickness of resist liquid is kept constant. In addition, since the resist liquid is applied only to a required portion (application area), not the entire surface on the substrate, the consumption of the resist liquid can be reduced, and the time required for drying can be shortened.

In the method of the present invention, in order to reduce the coating unevenness in the coating region, preferably, the resist liquid may be applied in the coating region so as to cover the entire region with a substantially constant film thickness. In the apparatus of the present invention, preferably, the scanning means comprises a first scanning portion for moving the resist nozzle head relative to the substrate in a first direction orthogonal to the arrangement direction of the nozzle portion, and the resist nozzle head with respect to the substrate. You may have a 2nd scanning part which moves relatively to a 2nd direction parallel to the arrangement direction of a nozzle part. In addition, in order to further shorten the drying time after coating, it preferably has drying means for heating and drying the resist liquid immediately after the coating on the substrate, and the drying means is scanned by the scanning means together with the resist nozzle head. A configuration may be employed.

As one aspect of the present invention, in the case where the substrate is a multi-faceted base material substrate for a flat panel display, an application region may be set corresponding to each panel region on the substrate.

As another aspect, when the substrate is a substrate for TFT liquid crystal display having a thin film transistor (TFT) for each pixel, the coating region may be set corresponding to each TFT region on the substrate.

In addition, when a board | substrate is a board | substrate for color filters which has a red, green, or blue colored layer for every pixel, you may set an application | coating area | region corresponding to each pixel area on a board | substrate for each colored layer.

Embodiment of the Invention

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described with reference to an accompanying drawing.

Fig. 1 shows a coating and developing treatment system as one structural example to which the resist coating method and apparatus of the present invention can be applied. This coating and developing system 10 is installed in a clean room, for example, using a glass substrate for LCD as a substrate to be treated, and cleaning, resist coating, prebaking, developing and the like during the photolithography process in the LCD manufacturing process. Each process, such as post-baking, is performed. An exposure process consists of an external exposure apparatus 12 provided adjacent to this system.

This coating and developing system 10 arranges a horizontally long process station (P / S) 16 at a central portion thereof, and the cassette station (C / S) 14 at both ends of its longitudinal direction (X direction). And an interface station (I / F) 18 are arranged.

The cassette station (C / S) 14 is a cassette carrying in / out port of the system 10, and allows the substrate G to be stacked in multiple stages so that a plurality of stackable cassettes C can be stacked in the horizontal direction, for example, in the Y direction. The cassette stage 20 which can be mounted side by side, and the conveyance mechanism 22 which carries out the board | substrate G with respect to the cassette C on this stage 20 are provided. The conveyance mechanism 22 has a means which can hold | maintain the board | substrate G, for example, the conveyance arm 22a, is operable by four axes of X, Y, Z, and (theta), and is adjacent to the process station P / S The board | substrate G can be exchanged with the (16) side.

The process station (P / S) 16 arranges each processing unit in a process flow or process order in a pair of parallel and reverse lines A and B extending in the system longitudinal direction (X direction), and have. More specifically, in the process line A of the upstream portion from the cassette station (C / S) 14 side to the interface station (I / F) 18 side, the cleaning process unit 24 and the first thermal The processing unit 26, the coating process unit 28, and the second thermal processing unit 30 are arranged in a horizontal line. On the other hand, in the process line B of the downstream part which faces the cassette station (C / S) 14 side from the interface station (I / F) 18 side, the 2nd thermal processing part 30 and the developing process part 32 ), The decolorizing process section 34, and the third thermal processing section 36 are arranged in a horizontal line. In this line form, the second thermal processing unit 30 is positioned at the rear end of the upstream process line A, and is located at the head of the downstream process line B. Both lines A and B Across

An auxiliary transport space 38 is formed between the two process lines A and B, and the shuttle 40, which can place the substrate G horizontally in units of one sheet, is lined by a driving mechanism (not shown). Bidirectional movement is made possible in the direction (X direction).

In the process line A of the upstream section, the cleaning process section 24 includes a scrubber cleaning unit (SCR) 42, and a cassette station (C / S) in the scrubber cleaning unit (SCR) 42. An excimer UV irradiation unit (e-UV) 41 is disposed at a position adjacent to 14. The cleaning unit in the scrubber cleaning unit (SCR) 42 is brushed on the upper surface (to-be-processed surface) of the substrate G while conveying the LCD substrate G in the direction of the line A in a horizontal position by roller conveyance or belt conveyance. It is supposed to perform cleaning or blow cleaning.

The first thermal processing unit 26 adjacent to the downstream side of the cleaning process unit 24 is provided with a vertical conveying mechanism 46 in the center portion along the process line A, and multiple stages are provided in both front and rear sides thereof. It is laminated | stacked and arrange | positioned. For example, as shown in FIG. 2, the upstream side multi-stage unit (TB) 44 has a pass unit (PASS) 50 for substrate feeding and a heating unit (DHP) 52 for dehydration baking. (54) and Advance Unit (AD) 56 are stacked in order from the bottom. Here, the pass unit (PASS) 50 is used to exchange the substrate G with the scrubber cleaning unit (SCR) 42 side. In addition, the downstream multi-stage unit (TB) 48 has a pass unit (PASS) 60, a cooling unit (COL) 62, 64, and an advice unit (AD) 66 for feeding and receiving a substrate. Are stacked one after the other. Here, the pass unit (PASS) 60 is for exchanging the substrate (G) with the coating process unit 28 side.

As shown in FIG. 2, the conveyance mechanism 46 rotates in the (theta) direction on the lifting carrier 70 which can move up and down along the guide rail 68 connected in the perpendicular direction, or The pivoting carrier 72 and the carrier arm or tweezers 74 which are retractable or retractable in the front-rear direction while supporting the substrate G on the pivoting carrier 72 are provided. A driving unit 76 for elevating and driving the lifting carrier 70 is provided at the base end side of the vertical guide rail 68, and the driving unit 78 for pivoting the turning carrier 72 is a lifting carrier ( 70, and a driving unit 80 for advancing and driving the carrier arm 74 is attached to the rotary carrier 72. As shown in FIG. Each drive part 76, 78, 80 may be comprised, for example with an electric motor.

The conveyance mechanism 46 configured as described above is accessible to any unit in the multi-stage unit (TB) 44,48 adjacent to both sides by moving up and down at high speed, and on the side of the auxiliary transport space 38. The substrate G can also be exchanged with the shuttle 40.

As shown in FIG. 1, the coating process unit 28 adjacent to the downstream side of the first thermal processing unit 26 includes a resist coating unit (CT) 82, a reduced pressure drying unit (VD) 84, and an edge remover. Units (ER) 86 are arranged in a line along process line A. FIG. Although not shown, the substrate G is loaded into each of these three units (CT) 82, (VD) 84, and (ER) 86 in the order of the process in the coating process unit 28. The conveying apparatus for carrying out is provided and each process is performed by the board | substrate unit in each unit (CT) 82, (VD) 84, and (ER) 86. As shown in FIG.

The second thermal processing unit 30 adjacent to the downstream side of the coating process unit 28 has the same configuration as that of the first thermal processing unit 26, and transfers vertically between the two process lines A and B. A mechanism 90 is provided, and one multi-stage unit part (TB) 88 is installed on the process line (A) side (end), and the other multi-stage unit part on the process line (B) side (head). (TB) 92 is provided.

Although not shown, for example, a pass unit (PASS) for feeding and receiving a substrate is placed at the bottom of the multi-stage unit (TB) 88 on the process line A side, and a heating unit for prebaking is placed thereon. (PREBAKE) may be stacked in three stages, for example. In the multi-stage unit (TB) 92 on the side of the process line B, a pass unit PASS for feeding and receiving the substrate is placed at the lowermost stage, and the cooling unit COL is stacked, for example, on one stage. The heating unit for prebaking (PREBAKE) may be stacked in two stages, for example.

The conveyance mechanism 90 in the 2nd thermal processing part 30 is an application | coating process part 28 and the developing process part (Through each pass unit PASS of both multi-stage unit parts TB (88,92). 32 and the substrate G can be exchanged by one unit, and the substrate G can also be transferred to the shuttle 40 in the auxiliary transport space 38 or the interface station (I / F) 18 described later. It is designed to be exchanged in chapters.

In the downstream process line B, the developing process part 32 includes a so-called horizontal flow developing unit (DEV) 94 which performs a series of developing treatment steps while conveying the substrate G in a horizontal posture. Doing.

On the downstream side of the developing process part 32, the 3rd thermal processing part 36 is arrange | positioned with the decolorization process part 34 interposed. The decolorization process part 34 is equipped with the i-line UV irradiation unit (i-UV) 96 for irradiating i line | wire (wavelength 365nm) to the to-be-processed surface of the board | substrate G, and performing a decoloring process.

The third thermal processing unit 36 has the same configuration as the first thermal processing unit 26 or the second thermal processing unit 30, and the longitudinal conveyance mechanism 100 along the process line B and both front and rear sides thereof. A pair of multi-stage unit (TB) 98,102 is provided in the chamber.

Although not shown, for example, a pass unit PASS is placed at the lower end of the multistage unit part TB 98 on the upstream side, and a heating unit POBAKE for post-baking is, for example, three stages thereon. May be laminated. The downstream multistage unit (TB) 102 is provided with a post-baking unit (P0BAKE) at the bottom, and a pass / cooling unit (PASS / C0L) for exchanging and cooling the substrate thereon. The heating unit for post-baking (POBAKE) may be stacked in two stages.

The conveyance mechanism 100 in the third thermal processing unit 36 is irradiated with i-rays through the pass units PASS and the pass cooling unit PASS COL of both multi-stage unit units TB and 98 and 102, respectively. Not only can the unit (i-UV) 96 and the cassette station (C / S) 14 be exchanged with the substrate G in one unit, but also the substrate 40 and the shuttle 40 in the auxiliary transport space 38 are provided. (G) can be exchanged in units of one sheet.

The interface station (I / F) 18 has a conveying apparatus 104 for exchanging an adjacent exposure apparatus 12 with the substrate G, and has a buffer stage (BUF) 106 and an extension. A cooling stage (EXT COL) 108 and a peripheral device 110 are disposed. In the buffer stage (BUF) 105, a stationary buffer cassette (not shown) is placed. The extension cooling stage (EXT COL) 108 is a stage for exchanging substrates having a cooling function, and is used when exchanging the substrate G with the process station (P / S) 16 side. The peripheral device 110 may have a configuration in which, for example, a titler TITLER and a peripheral exposure device EE are stacked up and down. The conveying apparatus 104 has a conveyance arm 104a as a means which can hold | maintain the board | substrate G, for example, adjacent exposure apparatus 12, each unit (BUF) 106, (EXT * COL) ( 108), the (TITLER / EE) 110 and the substrate (G) can be exchanged.

3 shows the procedure of the processing in this coating and developing processing system. First, in the cassette station (C / S) 14, the conveyance mechanism 22 takes out one board | substrate G from the predetermined | prescribed cassette C on the stage 20, and processes the process station (P / S). It carries in to the excimer UV irradiation unit (e-UV) 41 of the washing | cleaning process part 24 of (16) (step S1).

In the excimer UV irradiation unit (e-UV) 41, the substrate G is subjected to dry cleaning by ultraviolet irradiation (step S2). Ultraviolet cleaning mainly removes organic substances from the surface of the substrate. After the ultraviolet cleaning is completed, the substrate G is transferred to the scrubber cleaning unit (SCR) 42 of the cleaning process part 24 by the conveyance mechanism 22 of the cassette station (C / S) 14.

In the scrubber cleaning unit (SCR) 42, as described above, the upper surface (feature) of the substrate G while conveying the substrate G in a horizontal position in a horizontal position by roller conveyance or belt conveyance. Brushing or blow cleaning to remove particulate contamination from the surface of the substrate (step S3). Then, even after washing, the substrate G is rinsed while being conveyed in a horizontal flow, and finally, the substrate G is dried using an air knife or the like.

The substrate G, which has been cleaned in the scrubber cleaning unit (SCR) 42, is transferred to the pass unit PASS 50 in the upstream side multi-stage unit part TB 44 of the first thermal processing part 26. It is brought in.

In the first thermal processing unit 26, the substrate G is rotated by the transfer mechanism 46 in predetermined sequences in predetermined units. For example, the substrate G is first moved from the pass unit PASS 50 to one of the heating units DHP 52 and 54, and subjected to dehydration therefrom (step S4). Subsequently, the substrate G is transferred to one of the cooling units (COL) 62 and 64, where it is cooled to a constant substrate temperature (step S5). Subsequently, the substrate G is transferred to the adventure unit AD 56 and subjected to hydrophobization there (step S6). After the end of this hydrophobization treatment, the substrate G is cooled to a constant substrate temperature by one of the cooling units (COL) 62, 64 (step S7). Finally, the substrate G is transferred to a pass unit PASS 60 belonging to the downstream multi-stage unit part TB 48.

Thus, in the 1st thermal processing part 26, the board | substrate G is the upstream multistage unit part TB (TB) 44 and the downstream multistage unit part TB (TB) 48 via the conveyance mechanism 46. As shown in FIG. You can come and go arbitrarily. Also, the same substrate transfer operation can be performed in the second and third thermal processing units 30 and 36.

The substrate G subjected to the above-described series of thermal or thermal processing in the first thermal processing unit 26 is downstream from the pass unit PASS 60 in the downstream multistage unit TB. It is transferred to a resist coating unit (CT) 82 of the coating process section 28 adjacent to it.

The substrate G is a resist coating unit (CT) 82, which is coated with a resist liquid on the upper surface (to-be-processed surface) of the substrate by, for example, a spinless method, and immediately afterwards, a pressure-sensitive drying unit (VD) 84 adjacent to the downstream side. ), A dry treatment under reduced pressure is carried out, and then an extra (unnecessary) resist on the edge of the substrate is removed by the edge remover unit (ER) 86 adjacent to the downstream side (step S8).

The substrate G subjected to the resist coating treatment as described above is a pass unit belonging to the upstream side multi-stage unit (TB) 88 of the second thermal processing unit 30 adjacent from the edge remover unit ER 86. Is passed to PASS).

In the second thermal processing unit 30, the substrate G is rotated by the transfer mechanism 90 in predetermined sequences in predetermined units. For example, the substrate G is first moved from the pass unit PA SS to one of the heating units PREBAKE, and is subjected to baking after applying the resist thereon (step S9). Subsequently, the substrate G is transferred to one of the cooling units COL and is cooled to a constant substrate temperature therein (step S10). Subsequently, the substrate G passes through an extension cooling stage on the interface station I / F 18 side with or without a pass unit PASS on the downstream multi-stage unit section TB 92. EXT COL) 108 is passed on.

In the interface station (I / F) 18, the substrate G is carried from the extension cooling stage (EXT COL) 108 to the peripheral exposure apparatus EE of the peripheral device 110, where the substrate After receiving the exposure for removing the resist attached to the periphery of (G) at the time of development, it is sent to the adjacent exposure apparatus 12 (step S11).

In the exposure apparatus 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Subsequently, the patterned substrate G is returned to the interface station (I / F) 18 from the exposure apparatus 12 (step S11). First, the substrate G is carried into the titler TITLER of the peripheral apparatus 110. Then, predetermined information is recorded in the predetermined part on a board | substrate (step S12). Subsequently, the substrate G returns to the extension cooling stage (EXT COL) 108. The conveyance of the board | substrate G in the interface station (I / F) 18, and the exchange of the board | substrate G with the exposure apparatus 12 are performed by the conveying apparatus 104.

In the process station (P / S) 16, the transfer mechanism 90 receives the exposed substrate G from the extension cooling stage (EXT COL) 108 in the second thermal processing unit 30. The data is sent to and received from the developing process unit 32 via a pass unit PASS in the multi-stage unit TB 92 on the process line B side.

In the developing process section 32, the substrate G received from the pass unit PA SS in the multi-stage unit section TB 92 is loaded into the developing unit DEV 94. In the developing unit (DEV) 94, the substrate G is conveyed in a horizontal flow manner downstream of the process line B, and a series of developing processes of developing, rinsing and drying are performed during the conveyance (step S13). ).

The substrate G subjected to the developing process in the developing process part 32 is carried into the decolorizing process part 34 adjacent to the downstream side, and is subjected to the decolorizing process by i-line irradiation there (step S14). The board | substrate G after the decolorization process is received by the pass unit PASS in the upstream side multi-stage unit part TB (98) of the 3rd thermal processing part 36.

In the third thermal processing unit 36, the substrate G is first moved from the pass unit PA SS to one of the heating units POBAKE and subjected to postbaking there (step S15). Subsequently, the substrate G is transferred to the pass cooling unit PASS · COL in the downstream multi-stage unit section TB (TB) 102, where it is cooled to a predetermined substrate temperature (step S16). The conveyance of the board | substrate G in the 3rd thermal processing part 36 is performed by the conveyance mechanism 100. FIG.

On the cassette station (C / S) 14 side, the conveying mechanism 22 removes the substrate G, which has completed the entire process of the coating and developing process in the pass cooling unit PASS COL of the third thermal processing unit 36. It accepts and accommodates the received board | substrate G in any cassette C (step S1).

In this coating and developing processing system 10, the present invention can be applied to a resist coating unit (CT) 82 of the coating process unit 28. An embodiment in which the present invention is applied to a resist coating unit (CT) 82 will be described below with reference to FIGS. 4 to 19.

4 and 5, the main parts of the resist coating unit (CT) 82, the vacuum drying unit (VD) 84, and the edge remover unit (ER) 86 in the coating process unit 28 are shown. Indicates.

These coating system processing unit groups (CT) 82, (VD) 84, and (ER) 86 are arrange | positioned on the support stand 112 in a horizontal line according to the order of a process. The pair of transfer arms 116 and 116 moving along the pair of guide rails 114 and 114 attached to both sides of the support 112 allow the substrate G to be directly exchanged between the units.

The reduced pressure drying unit (VD) 84 is configured to be able to be in close contact or fit in an airtight manner with the lower chamber 118 of a tray or a shallow bottom container type having an upper surface opened, and the upper surface of the lower chamber 118. The lid has an upper chamber 120. The lower chamber 118 has a substantially rectangular shape, and a stage 122 for horizontally supporting and supporting the substrate G is disposed at the center thereof, and an exhaust port 124 is provided at four corners of the bottom surface. An exhaust pipe 128 connected to each exhaust port 124 from below the lower chamber 118 is connected to a vacuum pump (not shown). With the upper chamber 120 covered with the lower chamber 118, the processing spaces in both chambers 118 and 120 can be reduced by a corresponding vacuum pump to a predetermined degree of vacuum.

The edge remover unit ER 86 has a stage 130 on which the substrate G is placed horizontally and supported, and alignment means 132 for positioning at a pair of corner portions facing the substrate G. As shown in FIG. ) And four rimber heads 134 or the like for removing excess resist from the peripheral portions (edges) of the four sides of the substrate G are provided. In the state where the alignment means 132 has positioned the substrate G on the stage 130, each of the rimber heads 1 34 moves along each side of the substrate G, and is attached to the peripheral edge of each side of the substrate. The excess resist is dissolved by thinner to remove it.

The resist coating unit (CT) 82 is a resist coating apparatus for applying a resist liquid onto a substrate G by a spinless method, and has a cup-shaped processing container 136 having an upper surface opened therein, and the processing container. A liftable stage 138 for horizontally placing and holding the substrate G in the 136, a lift driver 140 provided below the processing container 136 to lift and lower the stage 138, The syringe nozzle 144 which drives the resist nozzle head 154 (FIG. 6) which discharges a resist liquid with respect to the board | substrate G on the stage 138 in XY direction is provided.

6, the structure of the syringe port 144 is shown. In this syringe port 144, a pair of Y guide rails 146 and 146 extending in the Y direction are disposed on both sides of the processing container 136 (not shown in FIG. 6) and between the two Y guide rails 146 and 146. The X guide rails 148 connected in the X direction are traversed so as to be movable in the Y direction. For example, the Y-direction drive units 150 and 150 disposed at one end of both Y guide rails 146 and 146 move the X guide rails 148 through a power transmission mechanism (not shown) such as an endless belt. A straight drive is performed in the Y direction along both Y guide rails 146 and 146. Further, a carriage (carrier) 152 which is movable along the X guide rail 148 in the X direction, for example, self-propelled or externally driven, is provided, and the elongated carriage connected to the carriage 152 in the X direction is elongated. The resist nozzle head 154 of the shape is attached.

As shown in FIG. 7, the resist nozzle head 154 includes an introduction passage 157 for introducing the resist liquid from the end of the resist liquid supply pipe 156, and a buffer chamber 158 for collecting the introduced resist liquid once. And a plurality of nozzle portions 160 connected vertically downward at a predetermined interval from the bottom of the buffer chamber 158, and jet injection portions 162 provided in the nozzle portions 160. As shown in FIG. The discharge port 160a of the nozzle unit 160 has a diameter of, for example, 100 μm or less. The arrangement direction of the nozzle unit 160 is parallel to the head length direction.

Each jet spraying unit 162 is a so-called inkjet type, and has a piezoelectric element, for example, and contracts the piezoelectric element with an electric drive signal, and pressurizes the resist liquid in the nozzle unit 160 by the contraction pressure. And jetting (discharging) from the nozzle discharge port 160a as a droplet. The resist nozzle head 154 to the carriage 152 are equipped with a drive circuit (not shown) which gives an individual drive signal for each jet injection unit 162.

8 shows an example of the configuration of a control unit for controlling the resist liquid discharge operation of the resist nozzle head 154. The setting input unit 164 includes an operation panel, for example, and inputs various setting values relating to the type and size of the workpiece (substrate) and processing conditions. The host computer 166 sets a plurality of application areas substantially separated and independent on the to-be-processed surface of the substrate G based on the input set values, and displays data for displaying the layout of the application area, for example, an application image. Generate data. And when apply | coating a resist liquid to the board | substrate G, application image data is sent to the nozzle controller 168 at a predetermined | prescribed timing. The nozzle controller 168 generates a nozzle control signal for individually controlling the resist liquid ejecting operation of each jet injector 162 in the resist nozzle head 154 in accordance with the application image data from the host computer 166. Create In this embodiment, a nozzle control signal for applying a resist liquid to a plurality of discrete application regions set on the substrate G is generated. The nozzle control signal generated by the nozzle controller 168 is given as a drive signal to the jet injection unit 162 of each corresponding nozzle unit 160 via the drive circuit. On the other hand, the host computer 166 applies a scan control signal for controlling the scan movement of the resist nozzle head 154 to the controller or drive unit of the syringe port 144.

Next, the Example demonstrates the operation | movement of the resist coating unit (CT) 82 in this embodiment.

Example 1

9 to 13 show one embodiment in the case where the substrate G is a multi-faceted base material glass substrate for LCD.

As shown in FIG. 9, a plurality of discrete, for example, nine liquid crystal panel (cell) regions S are set in the base material glass substrate G. As shown in FIG. Usually, the liquid crystal panel region S is rectangular in shape, and is arranged in a matrix form with a gap or gap of about 10 to 20 mm for inserting a scribe line. The size of the substrate G, the size and number (surface formation number) and other layout information of the liquid crystal panel region S are input from the setting input unit 164 as a setting value. The host computer 166 sets the coating area E corresponding to the liquid crystal panel region S on the substrate G in accordance with the input set value. The correspondence relationship between the liquid crystal panel region S and the application region E may be a relationship in which the application region E covers the entire area of the liquid crystal panel region S to a minimum necessary, preferably in a one-to-one relationship. For example, as shown in FIG. 9, you may set to the substantially same shape so that application | coating area | region E may protrude outward slightly (for example, about 1-2 mm) from liquid crystal panel area | region S. FIG. What is important is that each coating area E is substantially separated and independent, that is, a substantially space | interval or clearance d is set between the adjacent coating areas E and E. FIG.

As shown in Fig. 9, the initial position Ps of the resist nozzle head 154 is set on the extension line of the liquid crystal panel region S of the first row on the base glass substrate G in the Y direction. When the resist coating process is started, the host computer 166 operates the syringe hole 144 (especially the Y-direction drive part 150) to move the resist nozzle head 154 from the initial position Ps to the base glass substrate G. The liquid crystal panel region S of the first column of the phases is moved straight to terminate in the Y direction. On the other hand, the resist liquid is supplied to the resist nozzle head 154 through a resist liquid supply pipe 156 from a resist liquid supply unit (not shown).

While the resist nozzle head 154 passes over each of the liquid crystal panel regions S in the first row, the nozzle controller 168 generates a nozzle control signal in accordance with the coated image data from the host computer 166. The nozzle portion 160 (more precisely the jet injection portion 162) of the resist nozzle head 154 is selectively operated. In this example, the active nozzle portion 160 that performs the resist liquid ejecting operation among the entire nozzle portions 160 of the resist nozzle head 154 has a section corresponding to the width size (X direction size) of the coating area E ( It is limited to the thing in M) (FIG. 7). When all the nozzle parts 160 belonging to this active section M reach the upper part of each coating area E, discharge of a resist liquid starts, and when it falls out of each coating area E, Stop the discharge. In each application area E, the resist liquid may be continuously discharged at a constant discharge amount so that a liquid film of the resist liquid is formed at a constant film thickness. The nozzle unit 160 which does not belong to the active section M is kept in an inactive state (off state) even during the resist coating process.

In this way, as shown in FIG. 10, the resist nozzle head 154 vertically moves the liquid crystal panel regions S in the first row in the Y-direction so that only the respective application regions E (the diagonal regions in the drawing) in the first row are moved. The resist liquid is applied.

After finishing the above-described application scanning for the liquid crystal panel regions S of the first row, the resist nozzle head 154 moves along the route indicated by the dashed line A in FIG. 10 to the second row and the third row. Do the same coating injection. More specifically, after terminating the liquid crystal panel region S in the first column and exiting the outside of the substrate G, the liquid crystal panel region S in the second column is moved to the position in the X direction once and then positioned. The resist liquid is applied only to each of the coating regions E in the second row by vertically shifting the liquid crystal panel regions S in the second row in the Y direction in the opposite direction to the row and performing the resist liquid ejection operation therebetween. do. Then, after moving out of the substrate G, it moves in the X direction to position the liquid crystal panel region S in the third row, and then the liquid crystal panel region S in the third row in the Y direction in the same direction as in the first column. ) And the resist liquid is apply | coated only to each application | coating area | region E of the 3rd row by performing the above-mentioned resist liquid discharge operation | movement between them.

As a result, as shown in FIG. 11, the resist liquid only exists in nine application | coating area | regions E (an oblique area | region of drawing) respectively corresponding to nine liquid crystal panel area | region S of the to-be-processed surface (upper surface) of the board | substrate G. As shown in FIG. It is applied with an almost constant film thickness. In the gap d between the edges of the substrate and the coating areas E and E adjacent to each other, a blank area in which no resist film exists is left.

As described above, the substrate G subjected to the resist coating process by the resist coating unit (CT) 82 is transferred to the adjacent reduced pressure drying unit (VD) 84 by the transfer arms 116 and 116. In the vacuum drying unit (VD) 84, after placing the substrate G in the lower chamber 118, the upper chamber 120 is covered and sealed, and the chamber is decompressed to about 0.1 Torr by a vacuum pump. This decompression state is maintained for a predetermined time. In such reduced pressure drying, the solvent is efficiently released from the resist liquid on the substrate G, while the resist liquid may move in a random direction or return may occur. However, in this embodiment, since the resist liquid on the substrate G is divided into a plurality of (9) application regions E with a gap d, the movement and return of the resist liquid are small in a small range. It is stable (divided) and does not lead to wide-ranging growth so as to affect the film thickness. For this reason, even after drying under reduced pressure, the resist film in each application | coating area | region E on the board | substrate G can maintain a substantially uniform film thickness.

In addition, in this embodiment, since the resist liquid is applied only limitedly or discretely to the necessary portion instead of the entire surface of the substrate G, the consumption of the resist liquid can be reduced, so that the time required for drying can be shortened. have. Therefore, the processing time in the reduced pressure drying unit (VD) 84 can be shortened, and the throughput of the whole coating process part 28 can be improved.

In addition, in this embodiment, a resist film is formed only in the several some application | coating area | region E set on the board | substrate G as mentioned above. Therefore, it is preferable to use a negative resist which leaves the exposed part in the coating area E after development.

In the above example, the coating area E is set so as to cover each liquid crystal panel area S to the minimum required on the substrate G. For example, as shown in FIG. 12, however, the gap (non-coated area) d is set only between adjacent liquid crystal panel regions S and S, and the edges of the substrate adjacent to each liquid crystal panel portion S are set. An application pattern in which the part is included in the application area E is also possible. Alternatively, as shown in FIG. 13, a gap (non-coated area) d is set only between each column (or each row), and one continuous to the liquid crystal panel portion S of the same column (or the same row). An application pattern for setting the application area E of the present invention is also possible.

In addition, said polyhedron formation is nine-surface formation which forms nine liquid crystal panels with one board | substrate G, However, this invention can be applied to the application of the polyhedral formation which forms arbitrary longevity. In the above example, the resist nozzle head 154 is configured to repeat the application scanning for each column or each row a plurality of times for the plurality of application regions E set in a matrix on the substrate G. However, in the case where the entire length of the nozzle portion of the resist nozzle head 154 can cover the end of the substrate G from the end to the end, the application area of the entire row or the entire row on the substrate G to the resist nozzle head 154. It is also possible to set the active range M of a plurality of sections so as to correspond to each of (E) so that the resist coating treatment on the substrate G can be performed in one scan.

Although Example 1 described above relates to a polyhedral base material glass substrate for a liquid crystal display, the present invention can be applied to any polyhedral form substrate, for example, a polyhedral base substrate for an organic EL display (OELD). In addition, the present invention can be applied to a polyhedral base substrate for a plasma display (PDP) and the like in the same manner as in Example 1.

Example 2

14 to 16 show one embodiment when the substrate G is a substrate for a TFT liquid crystal display having a thin film transistor TFT for each pixel.

As shown in FIG. 14, in the TFT liquid crystal display, active elements 160 made of TFT (Thin Film Transistor) and transparent electrodes made of ITO (Indium Tin Oxide) are used in each pixel region on a glass substrate by using photolithography technology. 162 is set. In the active element region or the TFT region, a Si thin film made of an amorphous silicon film or a poly silicon film is formed, and a gate electrode is formed on or under the Si thin film through a gate insulating film, and silicon is formed on both sides of the gate electrode. Impurity diffusion regions (source and drain) are formed in the thin film.

In the manufacturing process of this TFT-LCD, for example, as shown conceptually in FIG. 15, in the photolithography process of forming a Si thin film in each TFT area | region on the board | substrate G (more accurately, a liquid crystal panel area | region). The resist coating method of this embodiment can be used. That is, the discrete coating area E which covers each TFT area | region is set on the board | substrate G, and a resist liquid may be apply | coated only to the coating area E by the method similar to Example 1 mentioned above.

16, the procedure of the photolithography process which forms a Si thin film in each TFT area | region on the board | substrate G using the resist coating method of this invention is shown typically. As shown in Fig. 16A, a coating region for covering each TFT region by the resist coating process of the present invention with respect to the substrate G on which the Si thin film 164 is formed on the entire main surface ( Only in E), the resist film R is formed. Next, in the exposure step, as shown in FIG. 16B, the pattern of the photomask 166 is exposed only to discrete resist films R on the substrate G. As shown in FIG. Here, the pattern of the photomask 166 is set to partition the TFT region in the region of each resist film R. As shown in FIG. Therefore, when the development process is performed, as shown in FIG. 16C, the discrete resist film R 'corresponding to the division of each TFT region remains on the substrate G. As shown in FIG. Accordingly, in the etching step, as shown in FIG. 16D, the Si film 164 of the base layer is etched using this resist film R 'as a mask. Finally, when the resist film R 'is peeled off by ashing, as shown in FIG. 16E, the discrete Si film region 164' corresponding to the division of each TFT region is formed on the substrate G. As shown in FIG. Is formed.

Also in this embodiment, in the resist coating step, the movement or return of the resist liquid on the substrate G in the drying treatment can be effectively segmented or suppressed by the gaps d connected in a lattice shape, and the thickness of the resist film can be reduced. Uniformity can be guaranteed. Therefore, the precision of the port lithography process can be improved, and the production yield and device performance of TFT-LCD can be improved. In addition, it is also attempted to reduce the consumption of the resist liquid and to shorten the drying time.

Example 3

17 shows one embodiment when the substrate G is a substrate for a color filter having a red, green or blue colored layer for each pixel.

The color filter is formed by arranging three primary colors of red, green and blue pixels in a matrix on a transparent substrate, and enables color display of the LCD by combining with an optical optical shutter. Conventionally, a pigment dispersion method using port lithography is known as one of the manufacturing methods of a color filter. In this manufacturing method, after the pigment dispersion type resist liquid (color resist liquid) is applied onto a substrate, the pattern of the photomask is cured with ultraviolet rays (exposure) and further developed to form a colored pattern or pixel of one color. . By repeating the above steps for each color of red, green and blue, the three primary colors are formed in a matrix on the entire surface of the substrate.

Conventionally, in applying to a substrate, a color resist liquid is applied to the entire surface of the substrate. However, according to the present invention, as shown in Fig. 17A, for example, when applying a red color resist liquid, a discrete coating area E covering the area of each red pixel on the substrate G is shown. ), And the color resist liquid is applied to the application region E only in a limited or local manner. In the exposure step, as shown in FIG. 17B, a pattern for partitioning the red pixel region through the photomask 168 is exposed to the coating region E. FIG. As a result, as shown in Fig. 17C, the red pixel R 'is formed in the red pixel region on the substrate G. As shown in Figs. Similarly, green and blue pixels are also formed (FIG. 17D).

Also in this embodiment, it is possible to suppress the movement of the color resist liquid R coated on the substrate G during the drying process, thereby ensuring the uniformity of the film thickness of the color resist film. In addition, the consumption of the color resist liquid can be reduced and the drying time can be shortened.

Embodiments 1, 2, and 3 described above are examples, and the resist coating method and apparatus of the present invention can be applied to an application for applying any resist liquid on an arbitrary substrate in a photolithography process. Therefore, the substrate to be processed in the present invention is not limited to glass substrates for LCDs, and semiconductor wafers, CD substrates, glass substrates, photomasks, printed substrates, and the like can also be used.

In addition, the resist coating unit (CT) 82 of the above-mentioned embodiment resists the heater 170 for heating and drying the resist liquid immediately after it is apply | coated on the board | substrate G by the resist nozzle head 154. In addition, the nozzle head 154 may be configured to scan-move by the syringe port 144.

For example, as shown in Figs. 18 and 19, a pair of heaters 170 are arranged on both sides of the resist nozzle head 154 in the scanning direction, and the rear of the resist nozzle head 154 in the advancing direction. The heater 170 located on the side may be selectively operated. In each heater 170, a heat generating portion 172 made of, for example, a resistance heating element is provided. The heater 170 may be blown with air or nitrogen gas through the gas pipe 174 to blow out warm air from the heater 170 toward the substrate G. Thus, by drying the resist liquid just after application | coating to some extent in a resist coating process, the drying time in a subsequent drying process (pressure drying or prebaking) can be shortened further. In addition, since the resist liquid becomes difficult to move by such a pre-drying process, the uniformity of the film thickness can be further improved.

In the above-mentioned embodiment, the structure of each apparatus part is an example, and various deformation | transformation is possible. In particular, the jet injection unit 162 in the resist nozzle head 154 is not limited to the piezo system, but also a thermal system, a charge control system, and the like.

As described above, according to the resist coating apparatus or the resist coating method of the present invention, the resist liquid applied on the substrate to be processed can be prevented from moving during the drying process, and the film thickness uniformity of the resist film can be ensured. In addition, the consumption of the resist liquid can be reduced, and moreover, the time required for drying the resist liquid applied onto the substrate can be shortened.

Claims (11)

In the resist coating method of applying a resist liquid on a substrate to be processed in a photolithography step, Setting a plurality of application areas substantially separated and independent on the substrate; A resist coating method comprising the step of applying a resist liquid to the substrate in the application region. The resist coating method according to claim 1, wherein the resist liquid is applied so as to cover the entire region with a substantially constant film thickness in the coating region. The resist coating method according to claim 1 or 2, wherein the substrate is a substrate having a multi-sided form for a flat panel display, and in the coating area setting step, the coating area is set corresponding to each panel area on the substrate. . The substrate according to claim 1 or 2, wherein the substrate is a substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel, and in the coating area setting step, the coating area corresponds to each TFT area on the substrate. The resist coating method set. The substrate according to claim 1 or 2, wherein the substrate is a substrate for a color filter having a red, green, or blue colored layer for each pixel, and in the coating area setting step, each pixel region on the substrate for each colored layer. And the coating area is set in correspondence with the film. A resist nozzle head formed by arranging a plurality of nozzle portions configured to independently control the resist liquid discharge operation at predetermined intervals; Scanning means for scanningly moving the resist nozzle head relative to the substrate to be processed; Coating area setting means for setting a plurality of coating areas substantially separated and independent on the substrate; And a resist liquid ejecting control means for controlling a resist liquid ejecting operation of the nozzle portion in the resist nozzle head so as to apply a resist liquid to the substrate in the application region. 7. The scanning device according to claim 6, wherein the scanning means moves the resist nozzle head relative to the substrate in a first direction that is orthogonal to an arrangement direction of the nozzle portion, and the resist nozzle head with respect to the substrate. And a second scanning portion for relatively moving the nozzle in a second direction parallel to the arrangement direction of the nozzle portion. 8. The resist coating apparatus according to claim 6 or 7, further comprising drying means for heating and drying the resist liquid immediately after being applied onto the substrate, wherein the resist coating scans and moves the drying means together with the resist nozzle head by the scanning means. Device. 9. The substrate according to any one of claims 6 to 8, wherein the substrate is a substrate having a polyhedral form for flat panel display, and the coating area setting means corresponds to each panel area on the substrate to set the coating area. A resist coating apparatus. The substrate according to any one of claims 6 to 8, wherein the substrate is a substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel, and the coating area setting means corresponds to each TFT region on the substrate. A resist coating apparatus for setting the coating area. The substrate according to any one of claims 6 to 8, wherein the substrate is a substrate for a color filter having a red, green, or blue colored layer for each pixel, and the coating area setting means includes the substrate for each colored layer. A resist coating apparatus for setting the coating region in correspondence with each pixel region on the image.