1260686 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關在被處理基板塗佈處理液形成膜之際， 提昇膜形成處理的生產量，同時能在被處理基板均勻塗佈 處理液的塗佈膜形成裝置。 【先前技術】 在例如LCD的製造方面，藉由在被處理基板的LCD 基板，成膜特定的膜之後，塗佈光阻液而形成光阻膜，對 應電路圖案而曝光光阻膜，將此行進顯像處理的所謂微影 技術形成電路圖案。在此微影技術，被處理基板的LCD 基板，主要的工程是經過所謂洗淨處理—脫水烘乾—附著 (疎水化）處理—光阻塗佈—預烘-曝光-顯像—後烘的 一連串處理，於光阻層形成特定的電路圖案。 以往在此種處理方面，行進各處理的處理單元是以在 搬送路的兩側意識處理順序的形態而配置。而對各處理單 元的LCD基板的搬入搬出，是藉由可在搬送路移行的中 央搬送裝置行進。此種處理系統，因基本上是隨機存取所 以處理的自由度極高。 於此種處理系統方面，在LCD基板塗佈光阻液形成 光阻膜的方法，有一種使帶狀塗佈光阻液的光阻供給噴嘴 與LCD基板，在與噴嘴吐出口的長邊方向正交的方向相 對移動而塗佈的方法。此時，在光阻供給噴嘴設置具有在 基板寬幅方向延伸的微小間隙的縫隙狀吐出口，將由此縫 -5- (2) 1260686 隙狀吐出口被帶狀吐出的光阻液供給到基板的表面全體， 藉此形成光阻膜。 若根據此方法，由基板一邊至另一邊，帶狀吐出（供 給）光阻液的緣故’不會浪費光阻液，就能在角型的基板 全面形成光阻膜。再者，針對採用此種塗佈膜形成方法的 塗佈膜形成裝置，係揭示於日本專利文獻1 (特開平；1 〇 一 1 5 62 5 5 )。 [專利文獻1]日本特開平10— 156255號公報（第3頁 右欄第5行至第4頁左欄第6行、第1圖） 【發明內容】 [發明欲解決的課題] 可是有關利用前述塗佈膜形成方法的塗佈膜形成裝置 ，只是提昇膜形成處理的生產量，如第1 5圖所示，可設 置兩個由載置基板G的台面200、光阻供給噴嘴201、調 整附著在噴嘴201前端的光阻液狀態的噴嘴待機部202所 形成的裝置。若像這樣形成，於各個台面2 0 0，對基板並 進施行膜形成處理。 因而此時會有所謂印跡及裝置成本大增的技術性課題 〇 本發明是如前述情況下的發明，其目的在於提供一即 可極力抑制印跡及裝置成本大增還可使處理液塗佈在被處 理基板行進膜形成之際，提昇膜形成處理的生產量，同時 對各被處理基板均勻塗佈處理液的塗佈膜形成裝置。 -6 - (3) 1260686 [用以解決課題的手段] 爲解決前述的課題，有關本發明的塗佈膜形成裝置， 是針對被處理基板的表面塗佈處理液形成膜的塗佈膜形成 裝置，具有，具備：被並列配置且分別載置被處理基板的 第一台面及第二台面；和具有延伸於被處理基板的寬幅方 向的縫隙狀吐出口的一個處理液供給噴嘴；和移動前述處 理液供給噴嘴的噴嘴移動手段；和對前述處理液供給噴嘴 供給處理液的處理液供給手段；和使來自前述吐出口的處 理液吐出到旋轉自如形成的滾輪的周面且使前述滾輪旋轉 藉此均勻化處理附著在前述吐出口的處理液的塗底處理手 段；藉此前述處理液供給噴嘴，對載置在第一台面及第二 台面的被處理基板的表面塗佈處理液爲其特徵。 像這樣，並到配置兩個台面，藉此對載置在各個台面 的被處理基板有效率的行進塗佈處理。即，在其中一方的 台面進行塗佈處理中，在另一方的台面進行搬入搬出作業 的緣故，比以往單一台面的情況，更能節省基板搬入搬出 所需要的時間，可提昇生產量。 而前述塗底處理手段希望設置在前述第一台面與第二 台面之間。 而希望在對前述被處理基板行進塗佈處理之前，前述 噴嘴移動手段使前述處理供給噴嘴的吐出口接近前述滾輪 的周面，均句化處理附著在前述吐出口的處理液。 像這樣所構成，藉此無論載置在哪一台面的基板，均 -7- (4) 1260686 可在附著於處理液供給噴嘴的吐出口的處理液之均勻化處 理後，立刻進行塗佈處理。因而’對在任一台面所處理的 基板，都可行進膜厚均勻的塗佈處理’且提昇生產量。 而前述塗底處理手段’具備控制前述滾輪旋轉的滾輪 旋轉控制手段；希望在均勻化處理附著在前述吐出口的處 理液之際，前述滾輪旋轉控制手段是根據該均勻化處理後 的塗佈處理以前述第一台面或者前述第二台面的任一個台 ® 面所進行，來決定前述滾輪的旋轉方向。 若像這樣所構成，在噴嘴前端部，以吐出口爲邊境， 在與噴嘴行進方向相反側附著許多處理液的方式加以控制 。即，在噴嘴前端部方面，若以吐出口爲邊境，在與噴嘴 行進方向相反側附著許多處理液的狀態，就能在塗佈開始 時抑制因塗佈膜不均勻的掃帚痕等的發生。 並希望在前述塗底處理手段，設置抑制前述處理液供 給噴嘴前端乾燥的保濕手段。 ^ 像這樣藉由設置保濕手段，就能在待機時抑制噴嘴前 > 端乾燥。 ， 並希望前述塗底手段具備第一塗底處理手段及第二塗 底處理手段；前述第一塗底處理手段及第二塗底處理手段 ，分別配置在前述第一台面及第二台面的右側或左側。 並希望對載置在前述第一台面的被處理基板進行塗佈 處理之前，前述噴嘴移動手段使前述處理液供給噴嘴的吐 出口接近前述滾輪的周面，前述第一塗底處理手段均勻化 處理附著在前述吐出口的處理液，且對載置在前述第二台 -8 - (5) 1260686 面的被處理基板進行塗佈處理之前’前述噴嘴移動手段使 前述處埋液供給噴嘴的吐出口接近前述滾輪的周面’前述 第二塗底處理手段均勻化處理附著在前述吐出口的處理液 〇 像這樣，並列配置兩個台面，藉此對載置在各個台面 的被處理基板有效率的進行塗佈處理。即，在其中一方的 台面進行塗佈處理中在另一方的台面進行搬入搬出作業的 ^ 緣故，比以往單一台面的情況，更能節省基板搬入搬出所 需要的時間，可提昇生產量。 而分別配置對應各台面的滾輪的緣故，對載置在任一 台面的基板，均可在附著於處理液供給噴嘴之吐出口的處 理液的均勻化處理後，立刻進行塗佈處理。因而對於在任 一台面所處理的基板，都可進行膜厚均勻的塗佈處理，且 提昇生產量。 並希望前述第一及第二塗底手段，具備控制前述滾輪 ^ 旋轉的滾輪旋轉控制手段；前述第一塗底處理手段的滾輪 w 與前述第二塗底處理手段的滾輪的旋轉方向爲同一方向。 ， 若像這樣所構成，在噴嘴前端部方面，以吐出口爲邊 境，在與噴嘴行進方向相反側附著許多處理液的方式加以 控制。即，在噴嘴前端部方面，如果以吐出口爲邊境，在 與噴嘴行進方向相反側附著許多處理液的狀態，就可在塗 佈開始時抑制因塗佈膜不均勻發生掃帚痕等的情形。 再者，希望在前述第一塗底處理手段或者前述第二塗 底處理手段設置抑制前述處理液供給噴嘴前端乾燥的保濕 -9- (6) 1260686 手段。 像這樣藉由設置保濕手段，就能在待機時抑制噴嘴前 端乾燥。 [發明效果] 若根據本發明，可提供一能極力抑制印跡及裝置成本 大增，並將處理液塗佈於被處理基板進行膜形成之際，提 ® 昇膜形成處理的生產量，同時對各被處理基板均勻塗佈處 理液的塗佈膜形成裝置。 【實施方式】 [用以實施發明的最佳形態] 以下針對有關本發明的第一實施形態，根據圖面做說 明。第1圖是表示具備有關本發明之塗佈膜形成裝置（光 阻塗佈裝置）的光阻塗佈顯像處理裝置的全體構成的平面 圖 ° • 此光阻塗佈顯像處理裝置1 0 0，係具備：載置收容被 - 處理基板之複數L C D基板G (以下稱爲基板G )的複數晶 圓匣C的晶圓匣站1 ;和具備欲對基板G施以包含處理液 的光阻液的塗佈及顯像之一連串的處理的複數處理單元的 處理站2，和叙在與曝光裝置4之間進行基板G之交接的 介面站3。 再者，在前述處理站2的兩端，分別配置前述晶圓匣 站1及介面站3。而於第1圖中，光阻塗佈顯像處理裝置 -10- (7) 1260686 100的長邊方向爲X方向，於平面上與X方向正交的方向 爲Y方向。 晶圓匣站1具備欲在晶圓匣c與處理站2之間進行基 板G的搬入搬出的搬送裝置丨！。此搬送裝置η具有搬送 臂1 1 a，可在沿著晶圓匣C之配列方向的Υ方向所設的搬 送路1 〇上移動，藉由搬送臂1 1 a在晶圓匣C與處理站2 之間進行基板G的搬入搬出。 處理站2具有延伸於X方向的基板g搬送用之平行的 兩列搬送線A、B，沿著搬送線A由晶圓匣站1側向著介 面站3配列擦洗清淨處理單元（s C R ) 2 1、第1熱處理單 元區段26、光阻處理單元23及第2熱處理單元區段27的 一部分。 再者，在擦洗清淨處理單元（SCR ) 21之上的一部分 ，設置準分子UV照射單元（e — UV) 22。 而沿著搬送線B由介面站3側向著晶圓匣站1配列第 2熱處理單元區段27的一部分、顯像處理單元（DEV ) 24 、1線UV照射單元（i — UV ) 25及第3熱處理單元28。 而在處理站2，以構成前述兩列搬送線A，B的方式 ，且基本上依處理順序的方式配置各處理單元及搬送裝置 ，在該等搬送線A、B之間，設置空間部4 0。且可在此空 間部40往復移動地設置搬運梭4 1。此搬運梭4 1係可保持 基板G地被構成，成爲可在與搬送線A、B之間交接基板 G。 而介面站3具有：在處理站2與曝光裝置4之間進行 -11 - (8) 1260686 基板G的搬入搬出的搬送裝置42 ;和配置緩衝晶圓匣的 緩衝台面（BUF ) 43 ;和具備冷卻功能的基板交接部的擴 張·冷卻台面（EXT · COL ) 44，上下積層標記器（ TITLER)與周邊曝光裝置（EE)的外部裝置區塊45是鄰 接設置在搬送裝置42。再者，搬送裝置42具備搬送臂 42a，藉由此搬送臂42a在處理站2與曝光裝置4之間進 行基板G的搬入搬出。 在像這樣所構成的光阻塗佈顯像裝置1 〇〇方面，首先 被配置在晶圓匣站1的晶圓匣C內的基板G，經由搬送裝 置1 1搬入到處理站2之後，先進行利用準分子UV照射 單元（e - UV ) 22的擦洗前處理、利用擦洗清淨處理單元 (SCR) 21的擦洗清淨處理。 其次，基板G被搬入到屬於第1熱處理單元區段2 6 的熱處理單元區塊（TB ) 3 1、3 2，施行一連串的熱處理（ 脫水烘乾處理、疎水化處理等）。再者，第1熱處理單元 區段2 6內的基板搬送是藉由搬送裝置3 3施行。 然後，基板G被搬入到光阻塗佈處理單元2 3，施行 光阻液的膜形成處理。在此光阻塗佈處理單元2 3，先於光 阻塗佈裝置（CT) 23a方面，對基板G塗佈光阻液，接著 於減壓乾燥單元（VD ) 23b方面，完成減壓乾燥處理。 再者，此光阻塗佈處理單元2 3是包括作爲有關本發 明之塗佈膜形成裝置的光阻塗佈裝置（CT) 23a的單元， 詳細於後述。 在前述光阻塗佈處理單元23的光阻成膜處理後，基 -12- (9) 1260686 板G被搬入到屬於第2熱處理單元區段2 7的熱處理單元 區塊（TB ) 3 4、3 5，進行一連串的熱處理（預烘處理等） 。再者’第2熱處理單元區段27內的基板搬送是藉由搬 送裝置3 6進行。 其次，基板G是藉由搬送裝置3 6往介面站3的擴張 •冷卻台面（EXT.COL) 44搬送，藉由搬送裝置42搬 送到外部裝置區塊45的周邊感光裝置（EE )。在此對基 ^ 板G進行欲除去周邊光阻液的曝光，接著藉由搬送裝置 42搬送到曝光裝置4，基板G上的光阻膜被曝光而形成特 定的圖案。再者，按情況在緩衝台面（BUF ) 43上的緩衝 晶圓匣收容基板G之後搬送到曝光裝置4。 曝光結束後，基板G藉由介面站3的搬送裝置42被 搬送到外部裝置區塊45的上段標記器（TITLER)，並於 基板G記錄特定的資訊。然後，基板G被載置在擴張· 冷卻台面（EXT · COL ) 44，由此再次被搬送到處理站2 ^ 。並藉由例如滾柱搬送機構將基板G往顯像處理單元（ ~ DEV ) 24搬送，在此施行顯像處理。 ^ 顯像處理結束後，基板G由顯像處理單元（DEV ) 24 被搬送到i線UV照射單元（i 一 UV ) 25，對基板G施行 脫色處理。然後，基板G被搬入到第3熱處理單元區段 2 8，於熱處理單元區塊（TB ) 3 7、3 8施行一連串的熱處 理（後烘處理等）。再者，第3熱處理單元區段28內的 基板搬送是藉由搬送裝置3 9進行。 而基板G是在第3熱處理單元區段28被冷卻到特定 -13- (10) 1260686 溫度之後，藉由晶圓匣站1的搬送裝置1 1被收容 的晶圓匣C。 其次，針對光阻塗佈處理單元2 3根據第2圖 圖做說明。第2圖是構成光阻塗佈處理單元2 3的 佈裝置（CT) 23a、及減壓乾燥單元（VD) 23b的 。第3圖是第2圖的光阻塗佈處理單元2 3的側面圖 如圖所示，光阻塗佈裝置（CT ) 23a及減壓乾 (VD) 23b是在支持台60之上按照處理工程的順 置成橫一列。在支持台60的兩側舖設一對導軌62 沿著該導軌62平行移動的一組或複數組的搬送臂 單元間直接取得基板G。 減壓乾燥單元（VD ) 23b，具有：上面爲開口 或底淺容器型的下部真空室6 6 ;和能氣密密貼或是 此下部真空室66之上面所構成的蓋狀上部真空室 部真空室66爲略四角形，在中心部配置著欲水平 支撐基板G的台面70，在底面的兩處設置排氣口 連接在各排氣口 72的排氣管73則連通至真空幫浦 表示）。並在下部真空室66以覆蓋前述上部真空室 狀態，將兩真空室內的處理空間藉由該真空幫浦減 定的真空度。 像這樣所構成的減壓乾燥單元（VD ) 23b，在 佈裝置（CT ) 23a對塗佈光阻液的基板G，施行加 壓乾燥。即，減壓乾燥方面，光阻中的溶劑慢慢被 由於不會產生像加熱乾燥時的急遽乾燥，在此減壓 在特定 及第3 光阻塗 平面圖 〇 燥單元 序被配 ，藉由 64，在 的托架 嵌合於 67。下 載置而 72。而 (圖未 :67的 壓到特 光阻塗 熱至減 釋放， 乾燥單 -14- (11) 1260686 兀（VD ) 23b，光阻不會受到不良影響，可促進光阻的乾 燥。 更針對光阻塗佈裝置（CT) 23a根據第2圖至第4圖 做說明。第4圖是表示光阻塗佈裝置（c T ) 2 3 a的外觀立 體圖。如圖所示，此光阻塗佈裝置（C T ) 2 3 a，具備：水 平保持基板G的台面50(第一台面）及台面59(第二台 面）；和配設在該等台面上方的光阻供給噴嘴（處理液供 給噴嘴）5 1 ;和使此光阻供給噴嘴5 1 (以下稱噴嘴5 1 ) 移動的噴嘴移動手段8 6。於此構成中，噴嘴5 1藉由噴嘴 移動手段8 6做水平移動，藉此使台面5 〇、5 9上的基板G (G 1、G2 )與噴嘴5 1做相對水平移動。 再者，如第3圖所示，前述台面50及台面59分別具 備設有可昇降之吸附機構的基板保持部50a、59a，藉由前 述基板保持部50a、59a收取保持被搬入的基板G。 而如第4圖所示，前述噴嘴51具有：延伸於基板G1 、G2之寬幅方向的縫隙狀吐出口 5 1 a ;和連通此吐出口 5 1 a的光阻液收容室（圖未表示），經由連接於此光阻液 收容室的光阻液供給管57而連接光阻液供給源95 (處理 液供給手段）。 再者，噴嘴5 1的前端部，如第5圖的放大斷面圖所 示，由其短邊側觀看成錐狀，沿著噴嘴短邊方向，在吐出 口 5 1 a .的前後分別形成下端面5 1 b及傾斜面5 1 c。而此噴 嘴5 1在塗佈處理時的行進方向具有方向性。即，如第5 圖所示，與噴嘴行進方向相反側的下端部5 1 b，係寬幅地 -15- (12) 1260686 形成噴嘴短邊方向的長度。藉此像這樣所形成，被吐出的 光阻液R會經由下端部5 1 b的面往基板表面被推壓，使塗 佈處理變得很安定。 而如第2圖至第4圖所示，在台面50與台面59之間 ，設置噴嘴待機部5 5 (塗底處理手段）。此噴嘴待磯部 5 5，具備：欲在待機時使附著在噴嘴5 1之前端的光阻液 均勻化（稱爲塗底處理）之旋轉自如的塗底滾輪5 2 (滾輪 );和爲洗淨該塗底滾輪5 2浸泡在沖淡劑的容器5 3 ;和 用以抑制噴嘴5 1前端乾燥的保濕部（保濕手段）54。 再者，對基板之塗佈處理前的塗底處理，如第6圖所 示，使噴嘴5 1的前端接近塗底滾輪5 2的周面而配置。並 由吐出口 5 1 a吐出光阻液R，另一方面，藉由滾輪旋轉控 制手段65使塗底滾輪52旋轉，進行附著在噴嘴5 1之前 端的光阻液R的均勻化處理。 而如第6圖所示，由吐出口 5 1 a吐出的光阻液R流入 到滾輪5 2的旋轉方向。因而，於塗底處理後，在噴嘴5 1 前端之其中一方，沿著滾輪5 2的旋轉方向，附著比另一 方更多的光阻液的狀態。再者，於塗佈處理時，以吐出口 5 1 a爲邊境，少許附著光阻液R的這側爲行進方向的方式 控制噴嘴5 1的移動方向。藉由像這樣所形成，而於塗佈 開始時抑制掃帚痕等的發生，使塗佈膜更均勻。 而如第6圖所示，在塗底滾輪5 2的途中，設置滑動 片9 1。此滑動片9 1是由耐藥品性的樹脂所形成，前端滑 接到塗底滾輪5 2的周面，除去周面上所不要的前次之回 -16- (13) 1260686 流的光阻液和沖淡劑8 9。 再者，滑動片9 1的前端形狀以能發揮此光阻液除去 功能爲佳，除用在此例的楔形斷面外，可採用矩形斷面和 二股狀的斷面形狀的任意形狀。 而此滑動片9 1是藉由氣缸9 0可在接觸到塗底滾輪5 2 周面的下位置與遠離塗底滾輪5 2周面的上位置之間昇降 地被構成，配合需要，可變更其位置。 而如弟4圖所不’在吐出口 5 1 a的長邊方向的兩側， 設置減低由此吐出口 5 1 a吐出的光阻液R的吐出壓的膜厚 控制手段80。該膜厚控制手段80是以分別連接於連通到 吐出口 5 1 a之長邊方向的兩側的連通路8 1的吸引管82 ; 和設置在吸引管82的例如隔膜幫浦的吸引幫浦83所構成 ，以藉由吸引幫浦8 3的驅動使吐出口 5 1 a之兩側的吐出 壓減低的方式所構成。再者，在吸引管82的吸引幫浦83 的吸引側即噴嘴5 1側，介設開閉閥84。 接著，針對前述構成的光阻塗佈裝置（C T ) 2 3 a的動 作形態做說明。最初如第4圖所示，針對在例如載置於台 面5 0的基板G 1，塗佈光阻液R時的動作做說明。 首先’將噴嘴5 1配置在噴嘴待機部5 5，另一方面將 藉由搬送臂64所搬送的基板G 1吸附保持在台面5 0上。 此時，藉由設置在台面5 0的基板保持部5 0a而吸附基板 G 1。並由光阻液供給源9 5將光阻液R供給到噴嘴5 1內的 光阻液收容室，同時藉由噴嘴移動手段8 6將噴嘴5 1由噴 嘴待機部55移動到台面50的左側端部上方。 -17- (14) 1260686 其次，噴嘴5 1是一面由吐出口 5 1 a吐出光阻液R， 一面在基板G1上往右方向移動。再者’吐出口 51a與基 板G的距離，設置在40〜1 5 0 // m左右，理想爲設定在60 ji m。 而此時，驅動吸引幫浦83來吸引吐出口 51a之長邊 方向的兩側，藉此減少吐出口 5 1 a之兩側的光阻液R的吐 出壓，吐出口 5 1 a的中央部側的吐出壓與兩側的吐出壓大 致相等的狀態，即，光阻液R的液厚爲相等的狀態，帶狀 吐出到（供給）基板G上。因而，基板G與噴嘴5 1相對 水平移動，藉此在基板G的表面帶狀供給光阻液R，於基 板G的表面全體形成均勻膜厚的光阻膜。 像這樣，在基板G表面形成光阻膜之後，停止光阻液 R的供給，同時將噴嘴5 1移動到待機位置，且將噴嘴5 1 的吐出口 5 1 a接近到噴嘴待機部5 5內的塗底滾輪52，配 備在下一塗佈處理。而形成光阻膜的基板G藉由搬送臂 64從載置台50被搬送到減壓乾燥單元（VD) 23 b。 其次，針對於光阻塗佈裝置（CT ) 2 3 a方面，對複數 基板連續進行塗佈處理時的噴嘴5 1的動作，根據第7圖 及第8圖做說明。第7圖是表示噴嘴5 1之移動方向的模 式圖。第8圖是表示噴嘴5 1之動作控制工程的流程圖。 先使噴嘴5 1接近噴嘴待機部5 5的塗底滾輪5 2，進行 噴嘴5 1前端的塗底處理（第8圖的步驟S 1 )。未塗佈處 理狀態的基板G1被搬送到台面5 〇上時（第8圖的步驟 S 2 )，噴嘴51移動到台面5 〇的左側端部上，對基板G j -18- (15) 1260686 進行光阻丨仪R的塗佈處理（第8圖的步驟s 3 )。再者， 此時’噴嘴5 1移動到第7圖箭頭所示的方向，進行塗佈 處理。 其次，噴嘴5 1移動到噴嘴待機部5 5，進行噴嘴5 1前 端的塗底處理（第8圖的步驟S 4 )。末塗佈處理狀態的 基板G 2被搬送到台面5 9上時（第8圖的步驟S 5 )，噴 嘴5 1移動到台面5 9的右側端部上，對基板g2進行光阻 液R的塗佈處理（第8圖的步驟S 6 )。再者，此時噴嘴 5 1移動到第7圖箭頭所示的方向，進行塗佈處理。 其次，回到第8圖的步驟S 1的處理，然後未塗佈處 理狀態的基板連續搬送到各台面時，按照前述的流程，對 基板進行塗佈處理。 而在前述步驟S2或步驟S5方面，基板未被搬送到台 面上時，噴嘴5 1在塗底處理後移動到保濕部54，在噴嘴 5 1前端未乾燥的狀態下待機（第8圖的步驟S 7 )。 再者’如前述，噴嘴5 1於塗佈處理時在行進方向具 有方向性。因此，於塗佈處理時，對基板G丨、G2，如第 7圖的箭頭所示，在同一方向，噴嘴5 i以在基板上移動的 方式藉由噴嘴移動手段8 6控制移動的動作。 若根據以上說明的第一實施形態，並列配置兩個台面 5 〇、5 9，藉此對載置各台面的基板g有效率的進行塗佈處 理。即，在其中一方的台面進行塗佈處理中，在另一方的 台面進行搬入搬出作業的緣故，比以往單一台面時，更能 節省基板搬入搬出所需要的時間，可提昇生產量。 -19- (16) 1260686 而在兩個台面5 0、5 9間配置噴嘴待機部5 5的緣故’ 對載置在任一台面的基板G，都可在對噴嘴5 1的塗底處 理後，立刻進行塗佈處理。因此，對連接在任一台面的基 板G，都可進行膜厚均勻的塗佈處理。 而相較於第15圖所示之具備兩個由台面、噴嘴及噴 嘴待機部所形成的裝置的情形，可縮小印跡，還可減低裝 置成本。 進而，若根據前述實施形態所示的構成，在台面5 0 或台面59的任一方，因搬送臂64或基板保持部50a、59a 等的故障無法進行塗佈處理的狀態，均可使得有別於第8 圖所示之流程的流程動作，就可藉此在另一方的台面進行 塗佈處理。即，台面5 0側發生故障時，對噴嘴5 1前端的 塗底處理及台面59上之未處理的基板G2依序重複進行塗 佈處理的方式使其動作。另一方面，台面5 9側發生故障 時’對噴嘴5 1前端的塗底處理及台面5 0上之未處理的基 板G 1依序重複進行塗佈處理的方式使其動作。因而，可 回避因前述故障引起光阻塗佈顯像處理裝置1 〇 〇的運轉中 斷。 接著，根據第9圖至第1 1圖針對有關本發明的塗佈 膜形成裝置（光阻塗佈裝置）的第二實施形態做說明。再 者’於第二實施形態，與前述之第一實施形態僅光阻塗佈 裝置2 3 a的擀成及其動作控制不同的緣故，有關其他共通 的構成省略詳細的說明。 第9圖是模式表示第二實施形態的光阻塗佈裝置的側 -20- (17) 1260686 面圖。第1 〇圖是說明利用第9圖之光阻塗佈裝置具有 光阻供給噴嘴的塗佈處理的圖。第1 1圖是說明第9圖 光阻塗佈裝置具有的光阻供給噴嘴的塗底處理的圖。 在該第二實施形態，如第9圖所示，噴嘴5 1是根 藉由噴嘴移動手段8 6的動作控制，將塗佈處理時的移 方向變更到台面5 0側或台面5 9側。 而如第1 〇圖所示，噴嘴5 1的前端部是隔著吐出 5 1 a而向對的下端部5 1 1 —同形成寬幅。像這樣所形成 藉此就連噴嘴5 1的行進方向爲箭頭所示的任一方向， 吐出的光阻液R就可利用下端部5 1 b的面往基板表面被 壓，安定的被塗佈。 而於第1 1圖所示的塗底處理，滾輪旋轉控制手段 是根據下一次的塗佈處理在台面5 0或台面5 9的任一個 面進行來決定滾輪5 2的旋轉方向。即，於噴嘴5 1前端 以吐出口 5 1 a爲邊境，在下一次塗佈處理的噴嘴行進方 的相反側附著許多光阻液R的方式決定滾輪5 2的旋轉 向。 而如圖所示’隔著噴嘴5 1在滾輪5 0的左右，分別 置滑動片9 1，任一個滑動片9 1均藉由滾輪5 2的旋轉方 滑接到滾輪5 2之周面的方式被控制。gp，藉由滾輪5 2 旋轉方向，任一個滑動片9 0被驅動，就可控制滑動片 的昇降動作。 像這樣，若藉由有關本發明的第二實施形態’對被 置在台面50的基板G1或被載置在台面59的基板G2 的 之 據 動 P 被 推 65 台 向 方 設 向 的 91 載 的 -21 - (18) 1260686 任一個’都可在塗底處理後直接使噴嘴5 1移動到處理的 基板方向，照樣進行塗佈處理。即，比在噴嘴5 1之行進 方向具有方向性的構成，更不浪費噴嘴5 1的移動動作的 緣故，更能提昇生產量，還能抑制噴嘴5 1前端乾燥。 因而，若根據本實施形態，第9圖所示的光阻塗佈裝 置2 3 a的構成，藉此比前述第二實施形態的情形，在略同 一印跡更能提昇產出量的構成。 接著，根據第Ϊ 2圖針對有關本發明的塗佈膜形成裝 置（光阻塗佈裝軍）的第三實施形態做說明。再者，於第 三實施形態，與前述的第一實施形態僅光阻塗佈裝置2 3 a 的構成及其動作控制不同的緣故，有關其他共通的構成省 略詳細的說明。 第1 2圖是模式表示第三實施形態的光阻塗佈裝置的 側面圖。如第1 2圖所示，分別載置基板g 1、G2的台面 5 0及台面5 9是被橫向並列配置，在與台面5 9相反側的台 面5 0的鄰近處設置噴嘴待機部5 5 (塗底處理手段）。 於該光阻塗佈裝置2 3 a，由噴嘴待機部5 5移動的噴嘴 5 1先對台面5 0上的基板〇 1進行塗佈處理，接著對台面 5 9上的基板G 2進行塗佈處理，再回到噴嘴待機部5 5。 像這樣’若根據有關本發明的第三實施形態，可對分 別載置在台面50及台面59上的基板G1、〇2連續進行塗 佈處理的緣故，可增加相當單位時間的處理枚數。 可是’在前述第三實施形態，對基板G 1之塗佈處理 後，於塗佈處理中乾燥固化的光阻液會附著在縫隙狀的吐 -22- (19) 1260686 出口周邊。因此，在此狀態對下一基板G2進行塗佈處理 的話’會有所謂來自吐出口的光阻液的吐出散亂而無法對 基板面進行均勻塗佈處理之虞的技術性課題。 於是’解決前述技術性課題的實施形態，是根據第j 3 圖針對有關本發明的塗佈膜形成裝置（光阻塗佈裝置）的 第四實施形態做說明。再者，於第四實施形態，與前述的 第一實施形態僅光阻塗佈裝置2 3 a的構成及其動作控制不 ^ 同的緣故，有關其他共通的構成省略詳細的說明。 第1 3圖是模式表示第四實施形態的光阻塗佈裝置的 側面圖。如第1 3圖所示，形成將滾輪52 (第一塗底處理 手段）及保濕部5 4配置在台面5 0的左側，且將滾輪6 3 ( 第二塗底處理手段）配置在台面5 9的左側的構成。即， 滾輪63是被配置在台面52與台面63之間。再者，保濕 部54也可配置在滾輪63的鄰近處。而圖雖未表示，但也 | 可將滾輪5 2及保濕部5 4配置在台面5 0的右側，且將滾 輪6 3配置在台面5 9的右側。而在此情況，也可將保濕部 ^ 5 4配置在滾輪5 9的鄰近處。再者，前述滾輪5 2與滾輪 . 63是在同一方向旋轉。 若爲此種構成，就可先在利用滾輪5 2的塗底處理後 ’對在台面5 0的基板G 1進行塗佈處理，接著在利用滾輪 63的塗底處理後，對在台面59的基板G2進行塗佈處理 〇 像這樣，若藉由有關本發明的第四實施形態，對分別 載置在台面50與台面59的基板G1及基板G2的任一個 -23- (20) 1260686 ，均可在塗佈處理前進行塗底處理的緣故，就可解決在第 三實施形態的技術性課題。 而於第一實施形態印跡及裝置成本比第4圖所示的光 阻塗佈裝置2 3 a的構成更爲大增，但於第二實施形態可得 到與第9圖所示的光阻塗佈裝置同等的生產量。 再者，於前述第一至第四實施形態，具備有關第1圖 所示之本發明的塗佈膜形成裝置（光阻塗佈裝置）的光阻 ® 塗佈顯像處理裝置的全體構成（佈置）爲其中一例，並不 限於此。於第1 4圖表示其他形態的全體構成（佈置）。 在此，針對第1 4圖所示的光阻塗佈顯像處理裝置1 〇 1 的佈置做簡單說明。再者，有關與第1圖所示的構成相同 的部份以相同的符號標示，其詳細說明省略。 光阻塗佈顯像處理裝置1 〇 1與第1圖的光阻塗佈顯像 處理裝置1 0 1同樣地，沿著圖的X軸方向，並具備晶圓匣 站1、處理站2及介面站3。有關光阻塗佈顯像處理裝置 ^ 1 0 1的構成，第1圖的光阻塗佈顯像處理裝置1 0 0即可明1260686 (1) EMBODIMENT OF THE INVENTION [Technical Field] The present invention relates to a production process of a lift film forming process at the time of forming a film on a substrate to be processed, and at the same time, it can be uniformly coated on a substrate to be processed. A coating film forming device for liquid. [Prior Art] For example, in the manufacture of an LCD, after a specific film is formed on an LCD substrate of a substrate to be processed, a photoresist film is applied to form a photoresist film, and a photoresist film is exposed corresponding to the circuit pattern. The so-called lithography technique of the traveling development process forms a circuit pattern. In this lithography technology, the LCD substrate of the substrate to be processed, the main engineering is after the so-called washing treatment - dehydration drying - adhesion (hydration) treatment - photoresist coating - pre-baking - exposure - development - post-baking A series of processes form a specific circuit pattern in the photoresist layer. Conventionally, in such a process, the processing unit that advances each process is arranged in a form of conscious processing on both sides of the transport path. On the other hand, the loading and unloading of the LCD substrate of each processing unit is performed by the central transfer device that can travel on the transport path. Such a processing system has a very high degree of freedom of processing due to the fact that it is basically random access. In the processing system, a method of forming a photoresist film by applying a photoresist solution to an LCD substrate is provided by a photoresist supply nozzle for strip coating photoresist and an LCD substrate in a longitudinal direction of the nozzle discharge port. A method in which the orthogonal directions are relatively moved to be coated. At this time, a slit-shaped discharge port having a minute gap extending in the width direction of the substrate is provided in the photoresist supply nozzle, and the photoresist liquid which is discharged in a strip shape by the slit -5 - (2) 1260686 slit discharge port is supplied to the substrate. The entire surface of the surface is thereby formed into a photoresist film. According to this method, the photoresist film can be formed on the corner substrate from the side of the substrate to the other side, and the photoresist can be discharged (supply) without damaging the photoresist. In addition, a coating film forming apparatus using such a coating film forming method is disclosed in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 1 5 62 5 5 . [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 10-156255 (p. 3, right column, fifth line to fourth page, left column, sixth line, first figure) [Summary of the Invention] [Problems to be solved by the invention] The coating film forming apparatus of the coating film forming method is only the production amount of the lift film forming process. As shown in Fig. 15, two mesas 200 for mounting the substrate G, the photoresist supply nozzle 201, and adjustment can be provided. A device formed by the nozzle standby unit 202 in a photoresist state attached to the tip end of the nozzle 201. When formed as described above, a film formation process is performed on the substrate in each of the mesas 200. Therefore, there is a technical problem that the cost of the imprinting and the device is greatly increased at this time. The present invention is an invention as described above, and an object thereof is to provide a method for suppressing the cost of the imprinting and the device, and also coating the processing liquid. When the substrate to be processed is formed, a coating film forming apparatus that uniformly applies a treatment liquid to each of the substrates to be processed is produced while the throughput of the film formation treatment is increased. -6 - (3) 1260686 [Means for Solving the Problem] In order to solve the above-described problems, the coating film forming apparatus according to the present invention is a coating film forming apparatus that forms a film on the surface of the substrate to be processed. And a first working surface and a second surface on which the substrate to be processed are placed in parallel, and a processing liquid supply nozzle having a slit-shaped discharge port extending in a wide direction of the substrate to be processed; and moving the aforementioned a nozzle moving means for processing the liquid supply nozzle; and a processing liquid supply means for supplying the processing liquid to the processing liquid supply nozzle; and discharging the processing liquid from the discharge port to a circumferential surface of the roller which is rotatably formed, and rotating the roller The coating treatment means for treating the processing liquid adhering to the discharge port; the processing liquid supply nozzle is characterized in that the processing liquid is applied to the surface of the substrate to be processed placed on the first mesa and the second mesa . In this manner, by arranging the two mesas, it is possible to efficiently carry out the coating process on the substrate to be processed placed on each of the mesas. In other words, in the coating process of one of the mesas, the loading and unloading operation is performed on the other mesa, and the time required for the substrate to be carried in and out can be saved more than in the case of a single mesa, and the throughput can be increased. Further, the above-mentioned undercoating means is desirably disposed between the first mesa and the second mesa. It is desirable that the nozzle moving means brings the discharge port of the processing supply nozzle close to the circumferential surface of the roller before the coating processing of the substrate to be processed, and processes the processing liquid adhering to the discharge port. In this way, the substrate can be coated immediately after the homogenization treatment of the treatment liquid adhering to the discharge port of the treatment liquid supply nozzle, regardless of the substrate on which the surface is placed. . Therefore, it is possible to carry out a coating process in which the film thickness is uniform for the substrate processed on any of the mesas, and to increase the throughput. The undercoating means "provides a roller rotation control means for controlling the rotation of the roller. It is desirable that the roller rotation control means is based on the coating process after the homogenization treatment when the processing liquid adhering to the discharge port is homogenized. The rotation direction of the roller is determined by the first table surface or the one of the second table surfaces. According to this configuration, at the nozzle tip end portion, a plurality of processing liquids are attached to the side opposite to the nozzle traveling direction by the discharge port as a boundary. In other words, in the nozzle tip end portion, when a plurality of processing liquids are attached to the side opposite to the direction in which the nozzle travels with the discharge port as a boundary, it is possible to suppress the occurrence of a smear or the like due to unevenness of the coating film at the start of coating. Further, it is desirable to provide a moisturizing means for suppressing drying of the tip end of the treatment liquid supply nozzle in the above-described undercoating means. ^ By setting a moisturizing method like this, it is possible to suppress the drying of the front end of the nozzle during standby. And the priming means and the second priming means are disposed on the right side of the first table and the second table, respectively. Or on the left. It is desirable that the nozzle moving means brings the discharge port of the processing liquid supply nozzle close to the circumferential surface of the roller before the coating process on the substrate to be processed placed on the first mesa, and the first coating treatment means uniformizes The processing liquid that adheres to the discharge port and the coating process on the substrate to be processed placed on the surface of the second stage -8 - (5) 1260686 before the nozzle moving means supplies the discharge port of the burying liquid to the nozzle The second coating treatment means that is close to the circumferential surface of the roller is used to homogenize the processing liquid image adhered to the discharge port, and the two mesas are arranged side by side, thereby efficiently handling the substrate to be processed placed on each of the mesas A coating treatment is performed. In other words, in the case where one of the mesas is subjected to the coating process, the loading and unloading operation is performed on the other table surface, and the time required for the substrate to be carried in and out can be saved more than in the case of the conventional single mesa, and the throughput can be increased. On the other hand, the substrate placed on either of the mesas can be subjected to the coating treatment immediately after the treatment of the processing liquid adhering to the discharge port of the processing liquid supply nozzle. Therefore, it is possible to apply a uniform coating thickness to the substrate processed on any of the substrates, and to increase the throughput. It is desirable that the first and second coating means have a roller rotation control means for controlling the rotation of the roller; the rotation direction of the roller w of the first coating treatment means and the roller of the second coating treatment means are in the same direction . According to this configuration, in the nozzle tip end portion, a plurality of processing liquids are attached to the side opposite to the nozzle traveling direction by the discharge port. In other words, in the nozzle tip end portion, when a plurality of processing liquids are attached to the side opposite to the nozzle traveling direction by the discharge port as a boundary, it is possible to suppress the occurrence of a swab or the like due to unevenness of the coating film at the start of coating. Further, it is desirable that the first coating treatment means or the second coating treatment means be provided with a means for suppressing the drying of the front end of the processing liquid supply nozzle, -9-(6) 1260686. By providing a moisturizing means like this, it is possible to suppress the drying of the front end of the nozzle during standby. [Effect of the Invention] According to the present invention, it is possible to provide a production amount capable of suppressing the cost of the print and the apparatus, and applying the treatment liquid to the substrate to be processed for film formation, and the production amount of the film formation treatment is simultaneously performed. A coating film forming apparatus that uniformly applies a treatment liquid to each of the substrates to be processed. [Embodiment] [Best Mode for Carrying Out the Invention] Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a plan view showing the overall configuration of a photoresist coating development processing apparatus including a coating film forming apparatus (photoresist coating apparatus) according to the present invention. • This photoresist coating development processing apparatus 1 0 0 A wafer cassette station 1 in which a plurality of wafers C of a plurality of LCD substrates G (hereinafter referred to as substrates G) for accommodating a substrate to be processed are placed; and a photoresist having a processing liquid to be applied to the substrate G is provided The processing station 2 of the complex processing unit, which serially processes one of the coating and development of the liquid, and the interface station 3 which performs the transfer of the substrate G between the liquid and the exposure apparatus 4. Further, the wafer station 1 and the interface station 3 are disposed at both ends of the processing station 2, respectively. In the first drawing, the longitudinal direction of the photoresist coating development processing apparatus -10- (7) 1260686 100 is the X direction, and the direction orthogonal to the X direction on the plane is the Y direction. The wafer station 1 has a transfer device for carrying in and out the substrate G between the wafer cassette c and the processing station 2! . The transfer device η has a transfer arm 1 1 a and is movable on a transport path 1 设 provided in the Υ direction along the arrangement direction of the wafer cassette C, and the transfer arm 1 1 a is at the wafer cassette C and the processing station. The substrate G is carried in and out between the two. The processing station 2 has two parallel rows of transport lines A and B for transporting the substrate g extending in the X direction, and a scrubbing cleaning unit (s CR ) is arranged along the transport line A from the wafer station 1 side to the interface station 3 2 1. A part of the first heat treatment unit section 26, the photoresist processing unit 23, and the second heat treatment unit section 27. Further, an excimer UV irradiation unit (e - UV) 22 is provided at a portion above the scrub cleaning processing unit (SCR) 21. A part of the second heat treatment unit section 27, the development processing unit (DEV) 24, and the 1-line UV irradiation unit (i-UV) 25 and the first line are arranged along the transport line B from the interface station 3 side toward the wafer cassette station 1. 3 heat treatment unit 28. In the processing station 2, the processing units and the transporting apparatus are arranged substantially in the order of processing so as to constitute the two-column transporting lines A and B, and the space 4 is provided between the transporting lines A and B. 0. Further, the transport shuttle 4 1 can be provided to reciprocate in the space portion 40. The transport shuttle 41 is configured to hold the substrate G, and the substrate G can be transferred between the transport lines A and B. The interface station 3 has a transfer device 42 that performs loading and unloading of the -11 - (8) 1260686 substrate G between the processing station 2 and the exposure device 4, and a buffer table (BUF) 43 in which the buffer wafer is disposed; The expansion/cooling table surface (EXT · COL ) 44 of the substrate transfer portion of the cooling function, the upper and lower laminated markers (TITLER) and the external device block 45 of the peripheral exposure device (EE) are disposed adjacent to the transfer device 42. Further, the transport device 42 includes a transport arm 42a, and the transport arm 42a carries in and out the substrate G between the processing station 2 and the exposure device 4. In the photoresist coating and developing apparatus 1 configured as described above, first, the substrate G placed in the wafer cassette C of the wafer defect station 1 is carried into the processing station 2 via the transport device 1 1 The scrubbing treatment using the excimer UV irradiation unit (e-UV) 22 and the scrub cleaning treatment by the scrub cleaning unit (SCR) 21 are performed. Next, the substrate G is carried into the heat treatment unit blocks (TB) 3 1 and 3 2 belonging to the first heat treatment unit section 26, and a series of heat treatments (dehydration drying treatment, dehydration treatment, etc.) are performed. Further, the substrate transfer in the first heat treatment unit section 26 is performed by the transfer device 33. Then, the substrate G is carried into the photoresist coating processing unit 23, and a film forming process of the photoresist liquid is performed. In the photoresist coating processing unit 23, the photoresist G is applied to the substrate G in advance of the photoresist coating device (CT) 23a, and then the vacuum drying treatment is completed in the vacuum drying unit (VD) 23b. . Further, the photoresist coating processing unit 23 is a unit including a photoresist coating device (CT) 23a as a coating film forming device of the present invention, which will be described later in detail. After the photoresist film forming process of the photoresist coating processing unit 23, the substrate 12-(9) 1260686 plate G is carried into the heat treatment unit block (TB) 3 4 belonging to the second heat treatment unit section 27, 3 5, a series of heat treatment (pre-baking treatment, etc.). Further, the substrate transfer in the second heat treatment unit section 27 is performed by the transfer device 36. Next, the substrate G is conveyed by the transfer device 36 to the expansion/cooling surface (EXT.COL) 44 of the interface station 3, and is transported to the peripheral photosensitive device (EE) of the external device block 45 by the transfer device 42. Here, the substrate G is exposed to the peripheral photoresist, and then transported to the exposure device 4 by the transfer device 42, and the photoresist film on the substrate G is exposed to form a specific pattern. Further, in the case where the buffer wafer on the buffer table (BUF) 43 is accommodated in the substrate G, it is transported to the exposure device 4. After the exposure is completed, the substrate G is transported to the upper marker (TITLER) of the external device block 45 by the transfer device 42 of the interface station 3, and the specific information is recorded on the substrate G. Then, the substrate G is placed on the expansion/cooling table (EXT · COL ) 44, and is again transported to the processing station 2^. The substrate G is transported to the development processing unit (~DEV) 24 by, for example, a roller transport mechanism, and a development process is performed there. ^ After the development processing is completed, the substrate G is transported to the i-line UV irradiation unit (i-UV) 25 by the development processing unit (DEV) 24, and the substrate G is subjected to decolorization processing. Then, the substrate G is carried into the third heat treatment unit section 2, and a series of heat treatments (post-baking treatment or the like) are performed in the heat treatment unit blocks (TB) 3 7 and 38. Further, the substrate transfer in the third heat treatment unit section 28 is performed by the transfer device 39. On the other hand, the substrate G is the wafer cassette C accommodated by the transfer device 1 1 of the wafer defect station 1 after the third heat treatment unit section 28 is cooled to a specific temperature of -13 - (10) 1260686. Next, the photoresist coating processing unit 23 will be described based on Fig. 2 . Fig. 2 is a cloth device (CT) 23a constituting the photoresist coating processing unit 23, and a vacuum drying unit (VD) 23b. Fig. 3 is a side view of the photoresist coating processing unit 23 of Fig. 2, as shown in the figure, the photoresist coating device (CT) 23a and the reduced pressure dry (VD) 23b are processed on the support table 60. The project is placed in a horizontal row. A pair of guide rails 62 are laid on both sides of the support table 60. The substrate G is directly taken between a group or a plurality of transfer arm units that move in parallel along the guide rails 62. The reduced-pressure drying unit (VD) 23b has a lower vacuum chamber 6 6 having an open or shallow container type thereon, and a cap-shaped upper vacuum chamber portion which can be airtightly attached or formed on the upper surface of the lower vacuum chamber 66. The vacuum chamber 66 has a substantially square shape, and a mesa 70 for horizontally supporting the substrate G is disposed at the center portion, and an exhaust port 73 is provided at two places on the bottom surface, and the exhaust pipe 73 connected to each of the exhaust ports 72 is connected to the vacuum pump. . And in the lower vacuum chamber 66 to cover the state of the upper vacuum chamber, the processing space in the two vacuum chambers is reduced by the vacuum of the vacuum pump. The vacuum drying unit (VD) 23b configured as described above is subjected to pressure drying on the substrate G to which the photoresist is applied in the cloth device (CT) 23a. That is, in the case of drying under reduced pressure, the solvent in the photoresist is slowly subjected to rapid drying as in the case of heat drying, and the pressure is reduced in the specific and third photoresist coating plan drying unit order, by 64 The bracket is fitted to 67. Placed below and 72. And (Figure: 67: the pressure to the special photoresist to heat release to reduce the release, dry single -14- (11) 1260686 兀 (VD) 23b, the photoresist will not be adversely affected, can promote the drying of the photoresist. The photoresist coating apparatus (CT) 23a is explained based on Fig. 2 to Fig. 4. Fig. 4 is a perspective view showing the appearance of the photoresist coating apparatus (c T ) 2 3 a. As shown in the figure, the photoresist coating is shown. The cloth device (CT) 23 3 a includes a mesa 50 (first mesa) and a mesa 59 (second mesa) that horizontally hold the substrate G; and a photoresist supply nozzle (processing liquid supply nozzle) disposed above the mesas And a nozzle moving means 86 for moving the photoresist supply nozzle 5 1 (hereinafter referred to as a nozzle 5 1 ). In this configuration, the nozzle 5 1 is horizontally moved by the nozzle moving means 86, thereby The substrates G (G 1 , G2 ) on the mesas 5 , 5 9 are relatively horizontally moved with the nozzles 5 1 . Further, as shown in FIG. 3 , the mesas 50 and the mesas 59 are respectively provided with adsorption mechanisms capable of lifting and lowering The substrate holding portions 50a and 59a receive the substrate G held by the substrate holding portions 50a and 59a. As shown in Fig. 4, The nozzle 51 has a slit-shaped discharge port 5 1 a extending in the width direction of the substrates G1 and G2, and a photoresist liquid-receiving chamber (not shown) communicating with the discharge port 5 1 a via the connection of the photoresist The photoresist liquid supply pipe 57 of the liquid storage chamber is connected to the photoresist liquid supply source 95 (processing liquid supply means). Further, the tip end portion of the nozzle 51 is short as shown in the enlarged cross-sectional view of Fig. 5 The side surface is tapered, and the lower end surface 5 1 b and the inclined surface 5 1 c are formed in front of and behind the discharge opening 5 1 a. along the short side direction of the nozzle, and the traveling direction of the nozzle 51 in the coating process. Having the directivity, that is, as shown in Fig. 5, the lower end portion 5 1 b on the side opposite to the direction in which the nozzle travels is formed in a width of -15 - (12) 1260686 to form a length in the short side direction of the nozzle. Formed, the discharged photoresist R is pressed against the surface of the substrate via the surface of the lower end portion 5 1 b to make the coating process stable. As shown in FIGS. 2 to 4 , the mesa 50 is Between the mesas 59, a nozzle standby unit 5 5 (bottoming means) is provided. This nozzle is to be placed on the rock portion 5 5 and is intended to be in standby mode. a rotatably coated bottom roller 5 2 (roller) for homogenizing the photoresist liquid attached to the front end of the nozzle 5 1 (referred to as a priming treatment); and a container 5 for immersing the priming roller 5 2 in the immersion agent for cleaning 3; and a moisturizing portion (moisturizing means) 54 for suppressing drying of the tip end of the nozzle 5 1. Further, the coating treatment before the coating treatment of the substrate is as shown in Fig. 6, and the front end of the nozzle 51 is coated. The bottom surface of the bottom roller 52 is disposed, and the photoresist R is discharged from the discharge port 5 1 a. On the other hand, the roller roller 52 is rotated by the roller rotation control means 65 to adhere the light to the front end of the nozzle 5 1 . Homogenization treatment of the liquid barrier R. As shown in Fig. 6, the photoresist R discharged from the discharge port 5 1 a flows into the rotation direction of the roller 52. Therefore, after the priming treatment, one of the tips of the nozzles 5 1 is attached to the state of the photoresist in the direction of rotation of the roller 5 2 more than the other. Further, at the time of the coating treatment, the moving direction of the nozzle 51 is controlled such that the discharge port 5 1 a is the boundary and the side where the photoresist R is slightly attached is the traveling direction. By forming as described above, the occurrence of a swab or the like is suppressed at the start of coating, and the coating film is made more uniform. As shown in Fig. 6, on the way of the bottom roller 5 2, the slider 9 1 is provided. The sliding piece 91 is formed of a chemical-resistant resin, and the front end is slid to the circumferential surface of the coating roller 5 2, and the photoresist of the previous back--16-(13) 1260686 flow is removed. Liquid and thinner 8 9 . Further, the shape of the tip end of the slide piece 9 1 is preferably such that the photoresist liquid removing function can be exhibited, and in addition to the wedge-shaped cross section of this example, any shape of a rectangular cross section and a two-stripe cross-sectional shape can be employed. Further, the slide piece 9 1 is configured such that the cylinder 90 can be moved up and down between the lower position contacting the circumferential surface of the undercoat roller 5 2 and the upper position away from the circumferential surface of the undercoat roller 5 2, and can be changed as needed. Its location. On the other side of the longitudinal direction of the discharge port 5 1 a, the film thickness control means 80 for reducing the discharge pressure of the photoresist R discharged from the discharge port 5 1 a is provided. The film thickness control means 80 is a suction pipe 82 which is connected to the communication path 8 1 which is connected to both sides in the longitudinal direction of the discharge port 5 1 a, and a suction pump which is provided in the suction pipe 82, for example, a diaphragm pump. The configuration of 83 is such that the discharge pressure on both sides of the discharge port 5 1 a is reduced by the drive of the suction pump 8 3 . Further, an opening and closing valve 84 is interposed on the suction side of the suction pump 83 of the suction pipe 82, that is, on the nozzle 5 1 side. Next, an operation mode of the photoresist coating device (C T ) 2 3 a having the above configuration will be described. First, as shown in Fig. 4, an operation when the photoresist R is applied to the substrate G1 placed on the mesa 50, for example, will be described. First, the nozzle 5 1 is placed in the nozzle standby portion 55, and the substrate G1 carried by the transfer arm 64 is adsorbed and held on the table surface 50. At this time, the substrate G 1 is adsorbed by the substrate holding portion 50a provided on the mesa 50. The photoresist liquid R is supplied from the photoresist liquid supply source 95 to the photoresist liquid storage chamber in the nozzle 51, and the nozzle 51 is moved from the nozzle standby portion 55 to the left side of the mesa 50 by the nozzle moving means 86. Above the end. -17- (14) 1260686 Next, the nozzle 5 1 discharges the photoresist R from the discharge port 5 1 a while moving in the right direction on the substrate G1. Further, the distance between the discharge port 51a and the substrate G is set to be about 40 to 150 / m, preferably set at 60 ji m. At this time, the suction pump 83 is driven to suck both sides in the longitudinal direction of the discharge port 51a, thereby reducing the discharge pressure of the resist liquid R on both sides of the discharge port 5 1 a and the center portion of the discharge port 5 1 a. The discharge pressure on the side is substantially equal to the discharge pressure on both sides, that is, the liquid thickness of the resist liquid R is equal, and is discharged to the substrate G in a strip shape. Therefore, the substrate G and the nozzle 51 move relatively horizontally, whereby the photoresist R is supplied in a strip shape on the surface of the substrate G, and a photoresist film having a uniform film thickness is formed on the entire surface of the substrate G. After the photoresist film is formed on the surface of the substrate G, the supply of the photoresist R is stopped, the nozzle 51 is moved to the standby position, and the discharge port 5 1 a of the nozzle 5 1 is brought close to the nozzle standby portion 5 5 . The bottom roller 52 is equipped for the next coating process. The substrate G on which the photoresist film is formed is transported from the mounting table 50 to the decompression drying unit (VD) 23b by the transfer arm 64. Next, the operation of the nozzle 5 1 when the plurality of substrates are continuously subjected to the coating process for the photoresist coating apparatus (CT) 23 3 a will be described with reference to Figs. 7 and 8 . Fig. 7 is a schematic view showing the moving direction of the nozzle 51. Fig. 8 is a flow chart showing the operation control of the nozzle 51. First, the nozzle 5 1 is brought close to the coating roller 5 2 of the nozzle standby portion 5 5 to perform the coating process at the tip end of the nozzle 5 1 (step S 1 in Fig. 8). When the substrate G1 in the uncoated state is transported onto the mesa 5 (step S2 in Fig. 8), the nozzle 51 is moved to the left end of the mesa 5 ,, and the substrate G j -18- (15) 1260686 The coating process of the photoresist R is performed (step s 3 of Fig. 8). Further, at this time, the nozzle 51 moves to the direction indicated by the arrow in Fig. 7, and the coating process is performed. Next, the nozzle 51 moves to the nozzle standby portion 55, and the bottom coating of the nozzle 5 1 is performed (step S4 in Fig. 8). When the substrate G 2 in the final coating state is transported onto the mesa 5 9 (step S 5 in FIG. 8 ), the nozzle 5 1 is moved to the right end of the mesa 59 and the photoresist g is applied to the substrate g2. Coating treatment (step S 6 of Fig. 8). Further, at this time, the nozzle 51 moves to the direction indicated by the arrow in Fig. 7, and the coating process is performed. Then, the process returns to the step S1 of Fig. 8, and when the substrate in the uncoated state is continuously transferred to each of the mesas, the substrate is subjected to a coating process in accordance with the above-described flow. On the other hand, when the substrate is not conveyed to the table surface in the step S2 or the step S5, the nozzle 51 moves to the moisturizing portion 54 after the coating process, and stands by in a state where the tip end of the nozzle 5 1 is not dried (step of Fig. 8). S 7 ). Further, as described above, the nozzle 51 has a directivity in the traveling direction at the time of the coating process. Therefore, at the time of the coating process, as shown by the arrows in Fig. 7, the substrates G? and G2 control the movement of the nozzles by the nozzle moving means 86 in the same direction as the nozzles 5i move on the substrate. According to the first embodiment described above, the two mesas 5 and 5 are arranged side by side, whereby the substrate g on which the mesas are placed is efficiently coated. In other words, in the coating process of one of the mesas, the loading and unloading operation is performed on the other mesa, and the time required for the substrate to be carried in and out can be saved more than in the case of a single mesa, and the throughput can be increased. -19- (16) 1260686, the nozzle standby portion 5 is disposed between the two mesas 50, 59, and the substrate G placed on any of the mesas can be subjected to the coating treatment of the nozzle 51. The coating treatment is carried out immediately. Therefore, a uniform coating process can be performed on the substrate G connected to either of the mesas. In contrast to the case where there are two devices formed by the mesa, the nozzle and the nozzle standby portion as shown in Fig. 15, the footprint can be reduced and the cost of the device can be reduced. Further, according to the configuration described in the above-described embodiment, in either of the mesa 50 or the mesa 59, the coating arm 64 or the substrate holding portions 50a and 59a cannot be coated, and the coating process can be performed. In the flow of the flow shown in Fig. 8, the coating process can be performed on the other surface. In other words, when the failure occurs on the side of the table 50, the coating process at the tip end of the nozzle 5 1 and the unprocessed substrate G2 on the table 59 are sequentially repeated to perform the coating process. On the other hand, when a failure occurs on the mesa 5 9 side, the coating process at the tip end of the nozzle 5 1 and the unprocessed substrate G 1 on the mesa 50 are repeatedly applied in a coating process. Therefore, the operation interruption of the photoresist coating development processing apparatus 1 due to the above-described malfunction can be avoided. Next, a second embodiment of a coating film forming apparatus (photoresist coating apparatus) according to the present invention will be described with reference to Figs. 9 to 11 . Further, in the second embodiment, only the formation of the photoresist coating device 2 3 a and the operation control thereof are different from those of the first embodiment described above, and the other common configurations are omitted. Fig. 9 is a plan view showing the side -20-(17) 1260686 of the photoresist coating apparatus of the second embodiment. Fig. 1 is a view for explaining a coating process having a photoresist supply nozzle by the photoresist coating device of Fig. 9. Fig. 1 is a view for explaining a coating process of a photoresist supply nozzle provided in the photoresist coating device of Fig. 9. In the second embodiment, as shown in Fig. 9, the nozzle 51 is controlled by the operation of the nozzle moving means 86, and the direction of the coating process is changed to the side of the table 50 or the side of the table 59. Further, as shown in Fig. 1, the tip end portion of the nozzle 51 is formed to have a wide width by the pair of lower end portions 51 1 1 which are opposed to each other via the discharge 5 1 a. By forming in this manner, even if the traveling direction of the nozzle 51 is in any direction indicated by an arrow, the discharged photoresist R can be pressed against the surface of the substrate by the surface of the lower end portion 5 1 b, and can be stably coated. . On the other hand, in the priming process shown in Fig. 1, the roller rotation control means determines the rotation direction of the roller 5 2 based on the next coating process on either the land 50 or the table surface 59. In other words, the direction of rotation of the roller 5 2 is determined such that the front end of the nozzle 5 1 has a discharge port 5 1 a as a boundary, and a plurality of photoresist liquids R are attached to the opposite side of the nozzle traveling side of the next coating process. As shown in the figure, the sliding piece 9 is placed on the left and right sides of the roller 50 through the nozzle 5 1 , and any one of the sliding pieces 9 1 is slid to the circumferential surface of the roller 5 2 by the rotation of the roller 5 2 . The way is controlled. Gp, by the direction of rotation of the roller 5 2, any of the sliders 90 is driven to control the lifting movement of the slider. As described above, according to the second embodiment of the present invention, the substrate P placed on the mesa 50 or the substrate P placed on the mesa 59 is pushed by 91 units. The -21(12) 1260686 can be applied directly to the direction of the substrate after the primer treatment. In other words, the configuration is more directional than in the traveling direction of the nozzle 51, and the movement of the nozzle 51 is not wasted, so that the throughput can be increased and the front end of the nozzle 5 can be prevented from drying. Therefore, according to the present embodiment, the configuration of the photoresist coating device 23a shown in Fig. 9 is configured to increase the throughput in a slightly more uniform manner than in the case of the second embodiment. Next, a third embodiment of a coating film forming apparatus (photoresist coating machine) according to the present invention will be described based on Fig. 2 . Further, in the third embodiment, the configuration of the photoresist coating apparatus 2 3 a and the operation control thereof are different from those of the first embodiment described above, and other common configurations will be described in detail. Fig. 2 is a side view showing the photoresist coating apparatus of the third embodiment in a mode. As shown in Fig. 2, the mesas 50 and the mesas 5 9 on which the substrates g 1 and G2 are placed are arranged side by side in the lateral direction, and the nozzle standby portion 5 is provided in the vicinity of the mesa 50 opposite to the mesa 5 9 . (bottom treatment means). In the photoresist coating device 23a, the nozzle 51 moved by the nozzle standby portion 55 first coats the substrate 〇1 on the mesa 50, and then coats the substrate G2 on the mesas 59. After processing, it returns to the nozzle standby unit 55. As described above, according to the third embodiment of the present invention, the substrates G1 and 〇2 placed on the mesas 50 and the mesas 59 can be continuously subjected to the coating process, and the number of processes per unit time can be increased. However, in the third embodiment, after the coating treatment of the substrate G1, the photoresist which is dried and solidified in the coating treatment adheres to the periphery of the slit-like spout -22-(19) 1260686. Therefore, when the coating process is performed on the next substrate G2 in this state, there is a technical problem that the discharge of the photoresist from the discharge port is scattered and the substrate surface cannot be uniformly coated. Then, the embodiment that solves the above-described technical problems is described in the fourth embodiment of the coating film forming apparatus (photoresist coating apparatus) according to the present invention. Further, in the fourth embodiment, only the configuration of the photoresist coating device 2 3 a and the operation control thereof are different from those of the first embodiment described above, and the other common configurations are omitted. Fig. 3 is a side view showing the photoresist coating apparatus of the fourth embodiment in a mode. As shown in Fig. 3, the roller 52 (first coating treatment means) and the moisturizing portion 504 are disposed on the left side of the table 50, and the roller 6 3 (second coating treatment means) is disposed on the table 5 The composition of the left side of 9. That is, the roller 63 is disposed between the land 52 and the land 63. Further, the moisturizing portion 54 may be disposed adjacent to the roller 63. Although not shown, the roller 5 2 and the moisturizing portion 5 4 may be disposed on the right side of the table top 50, and the roller 6 3 may be disposed on the right side of the table surface 59. In this case, the moisturizing portion can also be disposed adjacent to the roller 59. Furthermore, the roller 5 2 and the roller 63 are rotated in the same direction. According to this configuration, the substrate G 1 on the mesa 50 can be applied to the substrate G 1 after the undercoating treatment of the roller 5 2, and then applied to the mesa 59 after the coating treatment by the roller 63. In the fourth embodiment of the present invention, the substrate G2 is applied to the substrate G2 and the substrate G1 and the substrate G2, respectively, -23-(20) 1260686. The technical problem of the third embodiment can be solved by performing the coating treatment before the coating treatment. However, in the first embodiment, the cost of the imprinting and the apparatus is increased more than that of the photoresist coating apparatus 23a shown in Fig. 4, but in the second embodiment, the photoresist coating shown in Fig. 9 can be obtained. The cloth production equipment has the same production capacity. In addition, in the first to fourth embodiments, the entire configuration of the photoresist coating development processing device of the coating film forming apparatus (photoresist coating apparatus) of the present invention shown in FIG. 1 is provided ( The arrangement is an example and is not limited thereto. The overall configuration (arrangement) of the other aspects is shown in Fig. 14. Here, the arrangement of the photoresist coating development processing apparatus 1 〇 1 shown in Fig. 14 will be briefly described. In addition, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. Similarly to the photoresist coating development processing apparatus 1 0 1 of FIG. 1 , the photoresist coating development processing apparatus 1 具备 1 includes a wafer station 1 and a processing station 2 along the X-axis direction of the drawing. Interface station 3. The configuration of the photoresist coating development processing device ^1 0 1 , the photoresist coating development processing device of Fig. 1 can be clearly described.
'白，不同是在於廢除搬運梭41、搬送裝置33、36、39等 • ，且各處理單元的基板G搬送，使用垂直搬送單元（s/A )的這點。 此垂直搬送單元（S/A)具有供搬送基板G的搬送臂 (圖示省略），其搬送臂可在X、Y及Z軸方向移動，且 可在水平方向轉動。 此構成的垂直搬送單元（S / A ) 1 3、1 5、1 2、1 4分別 鄰接配置在第1熱處理單元區段26、第2熱處理單元區段 -24- (21) 1260686 27、第3熱處理單元區段28，甚至光阻塗佈處理單元23 〇 再者，有關鄰接配置在光阻塗佈處理單元23的垂直 搬送單元（S/A ) 14，可沿著光阻塗佈裝置（CT ) 23a的 長邊方向（X方向）大幅移動單元自體。即，對分別載置 在光阻塗佈裝置（CT) 23a的台面50及台面59的基板G 而言，可對應搬送單元。 針對以上構成的光阻撃佈顯像處理裝置1 0 1的處理工 程做簡單說明。 首先，配置在晶圓匣站1的晶圓匣C內的基板G，藉 由搬送裝置1 1搬送到處理站2之後，先利用準分子UV 照射單元（e - UV ) 22進行擦洗前處理，且利用擦洗清淨 處理單元（SCR) 21進行擦洗清淨處理。 其次，基板G被搬入到屬於第1熱處理單元區段26 的熱處理單元區塊（TB) 31、32，進行一連串的熱處理（ 脫水烘乾處理、疏水化處理等）。再者，第1熱處理單元 區段26的基板搬送是藉由垂直搬送單元（S/A) 13進行 〇 然後，基板G被搬入到光阻塗佈處理單元23，施行 光阻液的膜形成處理。在此光阻塗佈處理單元2 3，以前述 第一至第四實施形態做說明，於光阻塗佈裝置（CT ) 23a ，對基板G塗佈光阻液，接著在減壓乾燥單元（VD ) 23b 完成壓乾燥處理。 再者，於此佈置，減壓乾燥單元（VD )構成兩段， -25- (22) 1260686 構成可對兩枚基板G並列處理（佈置與第2圖、第3圖的 例子不同。）。即，在光阻塗佈裝置（CT ) 23a，連續有 效率地對塗佈光阻的複數基板G並列進行減壓乾燥處理， 提昇生產量。 而對光阻塗佈裝置（CT) 23a及減壓乾燥單元（VD) 23b內的基板G之搬入、搬出，全藉由垂直搬送單元（ S/A ) 14 進行。 在前述光阻塗佈處理單元2 3進行光阻成膜處理後， 基板G被搬入到屬於第2熱處理單元區段27的熱處理單 元區塊（TB) 33，進行一連串的熱處理（預烘處理等）。 再者，第2熱處理單元區段27內的基板搬送是藉由垂直 搬送單元（S/A) 15進行。 其次，基板G被搬送到介面站3的外部裝置區塊45 的周邊曝光裝置（EE )。在此對基板G進行除去周邊光 阻的曝光。其次，基板G藉由具有與垂直搬送單元（S/a )相同之構成的介面單元（I/F ) 20被搬送到曝光裝置4， 基板G上的光阻膜被曝光而形成特定的圖案。再者，按情 形，在緩衝台面（B U F ) 4 3上的緩衝晶圓匣收容基板g後 ，搬送到曝光裝置4。 曝光結束後，基板G藉由介面單元（I/F) 20被搬送 到外部裝置區塊45的上段標記器（TITLER )，並於基板 G記錄特定的資訊。再者，按情形，曝光結束後，在緩衝 台面（B U F ) 4 3上的緩衝匣收容基板G後’搬送到外部裝 置區塊45的上段標記器（TITLER )。 -26- (23) 1260686 然後’基板G再被搬送到處理站2，在屬於第2熱處 理單兀區段27的熱處理單元區塊（HP) 35，進行一連串 的熱處理（後曝光烘乾等）。 並藉由例如滾柱搬送機構將基板（3往顯像處理單元（ DEV ) 24搬送，在此施行顯像處理。 顯像處理結束後，對基板G由顯像處理單元（D EV ) 24搬入到i線UV照射單元（丨一 uV) 25的基板G施行脫 色處理。然後，基板G被搬入到第3熱處理單元區段2 8 ，在熱處理單元區塊（TB) 37施行一連串的熱處理（後 烘處理等），在熱處理單元區塊（TB) 38冷卻到特定溫 度。再者，第3熱處理單元區段28內的基板搬送是藉由 垂直搬送單元（S/A) 12進行。 然後，基板G藉由輸送帶搬送被搬送到晶圓匣站1， 藉由搬送裝置1 1收容在特定的晶圓匣C。 有關以上說明的光阻塗佈顯像處理裝置1 0 1的構成， 如圖所示，在垂直搬送單元（S/A) 12的周邊配置第3熱 處理單元區段28，在垂直搬送單元（S/A) 13的周邊配置 第1熱處理單元區段26。更在垂直搬送單元（S/A) 14的 周邊配置光阻塗佈處理單元23，在垂直搬送單元（S/A) 1 5的周邊配置第2熱處理單元區段27。 因此，能有效率的進行基板搬送處理，進而，避免各 熱處理單元區段26、27、28和光阻塗佈處理單元23並設 在一方向，達到光阻塗佈顯像處理裝置的小型化。 而像這樣佈置的光阻塗佈顯像處理裝置1 〇 1，均能有 -27- (24) 1260686 效配置有關本發明的塗佈膜形成裝置。 再者，前述所有的實施形態中，以在L C D基板塗佈 形成光阻膜的情形爲例，但不限於此，適用於將處理液供 給到被處理基板上的任何塗佈膜形成裝置。本發明的處理 液除光阻液以外，例如也可爲層間絕緣材料、介電質材料 、配線材料等的液體。而本發明的被處理基板並不限於 LCD基板’也可爲半導體晶圓、CD基板、玻璃基板、光 罩、印刷基板等。 [產業上的可利用性] 本發明可應用於在LCD基板或半導體晶圓等使處理 液成膜的塗佈膜形成裝置，適用於半導體製造業界、電子 設備製造業界等。 【圖式簡單說明】 第1圖是表示具備有關本發明的塗佈膜形成裝置（光 阻塗佈裝置）的光阻塗佈顯像處理裝置的全體構成的平面 圖。 第2圖是表示具備第1圖之光阻塗佈顯像處理裝置的 光阻塗佈處理單元的第一實施形態的平面圖。 第3圖是第2圖的光阻塗佈處理單元的側面圖。 第4圖是表示構成第2圖之光阻塗佈處理單元的光阻 塗佈裝置外觀的立體圖。 第5圖是具備第4圖之光阻塗佈裝置的光阻供給噴嘴 - 28- (25) 1260686 之前端放大剖面圖。 第6圖是說明具備第4圖之光阻塗佈裝置的光阻供給 噴嘴的吐出口附近的光阻液均勻化處理的圖。 第7圖是表示具備第4圖之光阻塗佈裝置的光阻供給 噴嘴的移動方向的模式圖。 第8圖是表示具備第4圖之光阻塗佈裝置的光阻供給 噴嘴的動作控制工程的流程圖。 第9圖是模式表示有關本發明的塗佈膜形成裝置（光 阻塗佈裝置）的第二實施形態的側面圖。 第1 〇圖是說明利用第9圖之光阻塗佈裝置所具有的 光阻供給噴嘴的塗佈處理的圖。 第Π圖是說明第9圖之光阻塗佈裝置所具有的光阻 供給噴嘴的塗底處理的圖。 第1 2圖是模式表示有關本發明的塗佈膜形成裝置（ 光阻塗佈裝置）的第三實施形態的側面圖。 第1 3圖是模式表示有關本發明的塗佈膜形成裝置（ 光阻塗佈裝置）的第四實施形態的側面圖。 第圖是表示具備有關本發明的塗佈膜形成裝置（ %阻塗佈裝置）的光阻塗佈顯像處理裝置的其他全體構成 (佈置）例的平面圖。 第15圖是表示具備兩台習知塗佈膜形成裝置時的光 阻供給噴嘴的動作圖。 【主要元件符號說明】 -29- (26) (26)1260686 2 3 a :光阻塗佈處理單元 2 3 :光阻塗佈裝置（塗佈形成裝置） 50 :台面（第一台面） 5 1 :光阻供給噴嘴（處理液供給噴嘴） 5 1 a :吐出口 5 1 b :下端面 5 1 c :傾斜面 5 2 :塗底滾輪（第一塗底手段） 5 5 :噴嘴待機部（塗底處理手段） 59 :台面（第二台面） 8 6 :噴嘴移動手段 6 3 :塗底滾輪（第二塗底手段） 6 5 :滾輪旋轉控制手段 95 :光阻液供給源（處理液供給手段） 100 :光阻塗佈顯像處理裝置 1 0 1 :光阻塗佈顯像處理裝置 G : LCD基板（被處理基板） G1 : LCD基板（被處理基板） G2 : LCD基板（被處理基板） R :光阻液（處理液） -30-'White is different in that the transport shuttle 41, the transporting devices 33, 36, 39, etc. are discarded, and the substrate G of each processing unit is transported, and the vertical transport unit (s/A) is used. The vertical transfer unit (S/A) has a transfer arm (not shown) for transporting the substrate G, and the transfer arm is movable in the X, Y, and Z axis directions, and is rotatable in the horizontal direction. The vertical transfer units (S / A ) 1 3, 1 5, 1 2, and 1 4 having the above configuration are disposed adjacent to each other in the first heat treatment unit section 26 and the second heat treatment unit section - 24 - (21) 1260686 27, respectively. 3 heat treatment unit section 28, even photoresist coating processing unit 23, further, the vertical transfer unit (S/A) 14 disposed adjacent to the photoresist coating processing unit 23 may be along the photoresist coating apparatus ( CT) 23a's long-side direction (X direction) greatly moves the unit itself. In other words, the substrate G placed on the mesa 50 and the mesa 59 of the photoresist coating device (CT) 23a can correspond to the transport unit. The processing procedure of the photoresist recording and developing apparatus 1 0 1 configured as above will be briefly described. First, the substrate G disposed in the wafer cassette C of the wafer defect station 1 is transported to the processing station 2 by the transfer device 1 and then subjected to scrubbing pre-treatment by an excimer UV irradiation unit (e-UV) 22. The scrub cleaning process is performed by a scrub cleaning processing unit (SCR) 21. Next, the substrate G is carried into the heat treatment unit blocks (TB) 31 and 32 belonging to the first heat treatment unit section 26, and a series of heat treatments (dehydration drying treatment, hydrophobization treatment, etc.) are performed. Further, the substrate conveyance of the first heat treatment unit section 26 is performed by the vertical transfer unit (S/A) 13, and then the substrate G is carried into the photoresist coating processing unit 23 to perform film formation processing of the photoresist liquid. . In the photoresist coating processing unit 23, as described in the first to fourth embodiments, a photoresist is applied to the substrate G in a photoresist coating device (CT) 23a, followed by a vacuum drying unit ( VD) 23b The pressure drying process is completed. Further, in this arrangement, the reduced-pressure drying unit (VD) constitutes two stages, and -25-(22) 1260686 constitutes a parallel processing of the two substrates G (the arrangement is different from the examples of the second and third figures). In other words, in the photoresist coating apparatus (CT) 23a, the plurality of substrates G coated with the photoresist are continuously and efficiently dried in a reduced pressure to increase the throughput. The loading and unloading of the substrate G in the photoresist coating device (CT) 23a and the vacuum drying unit (VD) 23b is performed by the vertical transfer unit (S/A) 14. After the photoresist coating processing unit 23 performs the photoresist film formation process, the substrate G is carried into the heat treatment unit block (TB) 33 belonging to the second heat treatment unit section 27, and a series of heat treatments (prebaking treatment, etc.) are performed. ). Further, the substrate transfer in the second heat treatment unit section 27 is performed by the vertical transfer unit (S/A) 15. Next, the substrate G is transported to the peripheral exposure device (EE) of the external device block 45 of the interface station 3. Here, the substrate G is exposed to remove the peripheral photoresist. Next, the substrate G is transferred to the exposure device 4 by an interface unit (I/F) 20 having the same configuration as that of the vertical transfer unit (S/a), and the photoresist film on the substrate G is exposed to form a specific pattern. Further, in a case where the buffer wafer 上 on the buffer table (B U F ) 4 3 accommodates the substrate g, it is transported to the exposure device 4. After the exposure is completed, the substrate G is transported to the upper marker (TITLER) of the external device block 45 by the interface unit (I/F) 20, and the specific information is recorded on the substrate G. Further, in some cases, after the exposure is completed, the buffer 匣 on the buffer table (B U F ) 4 3 is placed in the substrate G and then transported to the upper marker (TITLER) of the external device block 45. -26- (23) 1260686 Then, the substrate G is transported to the processing station 2, and a series of heat treatments (post exposure drying, etc.) are performed in the heat treatment unit block (HP) 35 belonging to the second heat treatment unit section 27. . The substrate (3) is transported to the development processing unit (DEV) 24 by, for example, a roller transport mechanism, and development processing is performed thereon. After the development processing is completed, the substrate G is carried in by the development processing unit (D EV ) 24 . The substrate G of the i-line UV irradiation unit 25 is subjected to a decoloring treatment. Then, the substrate G is carried into the third heat treatment unit section 28, and a series of heat treatments are performed in the heat treatment unit block (TB) 37 (after The heat treatment unit block (TB) 38 is cooled to a specific temperature in the heat treatment unit block (TB) 38. Further, the substrate transfer in the third heat treatment unit section 28 is performed by the vertical transfer unit (S/A) 12. Then, the substrate G is conveyed to the wafer defect station 1 by the conveyance belt conveyance, and is accommodated in the specific wafer cassette C by the conveyance device 1 1. The configuration of the photoresist coating development processing device 10 described above is as shown in the figure. As shown in the figure, the third heat treatment unit section 28 is disposed around the vertical conveyance unit (S/A) 12, and the first heat treatment unit section 26 is disposed around the vertical conveyance unit (S/A) 13. Further, the vertical conveyance unit The photoresist coating processing unit 23 is disposed around the (S/A) 14 The second heat treatment unit section 27 is disposed around the vertical transfer unit (S/A) 15 . Therefore, the substrate transfer processing can be efficiently performed, and the heat treatment unit sections 26, 27, and 28 and the photoresist coating treatment can be avoided. The unit 23 is disposed in one direction to achieve miniaturization of the photoresist coating development processing apparatus. The photoresist coating development processing apparatus 1 〇1 thus arranged can have a -27-(24) 1260686 configuration. In the above-described embodiment, the case where the photoresist film is formed on the LCD substrate is exemplified, but the present invention is not limited thereto, and is suitable for supplying the processing liquid to the substrate to be processed. Any coating film forming apparatus of the present invention may be a liquid such as an interlayer insulating material, a dielectric material, or a wiring material, in addition to the photoresist liquid, and the substrate to be processed of the present invention is not limited to the LCD. The substrate ' can be a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate, etc. [Industrial Applicability] The present invention can be applied to coating a processing liquid on an LCD substrate or a semiconductor wafer. Cloth film shape The device is suitable for use in the semiconductor manufacturing industry, the electronic device manufacturing industry, etc. [Brief Description] FIG. 1 is a view showing photoresist coating development including a coating film forming apparatus (photoresist coating apparatus) according to the present invention. Fig. 2 is a plan view showing a first embodiment of a photoresist coating processing unit including the photoresist coating development processing device of Fig. 1. Fig. 3 is a view of the light of Fig. 2 Fig. 4 is a perspective view showing the appearance of a photoresist coating apparatus constituting the photoresist coating processing unit of Fig. 2. Fig. 5 is a view showing a photoresist coating apparatus having the fourth embodiment. Photoresist Supply Nozzle - 28- (25) 1260686 An enlarged view of the front end. Fig. 6 is a view for explaining a photoresist liquid homogenization treatment in the vicinity of the discharge port of the photoresist supply nozzle of the photoresist coating apparatus of Fig. 4. Fig. 7 is a schematic view showing the moving direction of the photoresist supply nozzle provided with the photoresist coating device of Fig. 4. Fig. 8 is a flow chart showing the operation control process of the photoresist supply nozzle provided with the photoresist coating device of Fig. 4. Fig. 9 is a side view showing a second embodiment of a coating film forming apparatus (photoresist coating apparatus) according to the present invention. Fig. 1 is a view for explaining a coating process by a photoresist supply nozzle included in the photoresist coating device of Fig. 9. Fig. 1 is a view for explaining a coating process of the photoresist supply nozzle of the photoresist coating device of Fig. 9. Fig. 1 is a side view showing a third embodiment of a coating film forming apparatus (photoresist coating apparatus) according to the present invention. Fig. 3 is a side view showing a fourth embodiment of a coating film forming apparatus (photoresist coating apparatus) according to the present invention. The figure is a plan view showing another example of the overall configuration (arrangement) of the photoresist coating development processing apparatus including the coating film forming apparatus (% resist coating apparatus) of the present invention. Fig. 15 is a view showing the operation of the photoresist supply nozzle when two conventional coating film forming apparatuses are provided. [Explanation of main component symbols] -29- (26) (26) 1260686 2 3 a : Photoresist coating processing unit 2 3 : Photoresist coating device (coating forming device) 50 : Countertop (first mesa) 5 1 : photoresist supply nozzle (treatment liquid supply nozzle) 5 1 a : discharge port 5 1 b : lower end surface 5 1 c : inclined surface 5 2 : bottom roller (first coating means) 5 5 : nozzle standby unit Bottom treatment method) 59: Countertop (second table) 8 6 : Nozzle moving means 6 3 : Bottom roller (second coating means) 6 5 : Roller rotation control means 95: Photoreceptor supply source (treatment liquid supply means 100 : Photoresist coating development processing apparatus 1 0 1 : Photoresist coating development processing apparatus G : LCD substrate (substrate to be processed) G1 : LCD substrate (substrate to be processed) G2 : LCD substrate (substrate to be processed) R: photoresist liquid (treatment liquid) -30-