TW440923B - Coating film forming method and coating apparatus - Google Patents

Abstract

A thinner nozzle is positioned above the center of a wafer to discharge a thinner, thereafter a thinner nozzle position and a resist nozzle position are shifted in such a manner that the resist nozzle is positioned above the center of the wafer. Meanwhile, during the shift time, the discharged thinner is left standing on the wafer and after the shift time, the wafer is rotated at a low speed to diffuse the thinner on the wafer in the direction of the radius thereof during a predetermined very short time. After the very short time, a resist solution is discharged to the wafer from the resist nozzle to form a resist film. Accordingly, even though a high-volatile solvent is used, the so-called pre-wet processing in which the front face of a substrate is moistened with a solvent in advance of coating with a coating solution can be securely performed and a coating film with a desired film thickness can be obtained.

Description

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 440922 p-4 4 0 9 23 Jade, Description of Invention (1) [Background of the Invention] The present invention relates to the formation of, for example, a semiconductor wafer, a liquid crystal display device, and the like on a substrate surface. A coating film forming method and a coating device for a protective coating film. For example, in the photolithography step of the semiconductor device manufacturing process, 'the protective film is applied on the surface of the semiconductor wafer to form a protective film coating process', and the semiconductor wafer after the protective film is coated is exposed in a predetermined shape. The image is processed for development. In this protective film coating process, a spin coating method or the like is often used as a method for uniformly coating a protective film liquid on the surface of a semiconductor wafer. In this spin coating method, for example, the wafer is held in a fixed state by vacuum suction using a spin chuck. The spin chuck and the wafer W are rotated together by a rotary drive device, and the wafer is arranged above the wafer w. The coating liquid nozzle drops the coating liquid almost at the center of the surface of the wafer w. The dropped coating liquid is diffused outward in the diameter direction of the wafer w by a centrifugal force. After that, the dripping of the coating liquid is stopped at a predetermined speed by the semiconductor wafer, and the remaining coating liquid is shaken off and the coating liquid is dried. Therefore, a coating film having a set film thickness is formed on the semiconductor wafer. Recently, it has been desired to reduce the consumption of the coating liquid for reasons such as reducing manufacturing costs. Therefore, it is attempted to reduce the amount of dripping of the coating liquid to each wafer. As a method to reduce the dripping amount of the coating liquid, the entire surface of the wafer is wetted with a solvent such as a diluent before the coating liquid is applied. As a result, a uniform coating film can be formed with a small amount of coating liquid, which can reduce the coating liquid. National paper standard (CNS > A4 specification (21G * 297) j {Please read the precautions on the back first) (Fill in this page again) ^ 1 ^ 1 I ^ 1 ϋ n I _ -III 1 IIII. 4 A7 B7 Economy multiply by smart money, 1 Bureau of Industrial Consumer Cooperatives printed the same consumption amount as the fifth and invention description (2). The solvent nozzle for this pre-wet treatment is usually installed on the same nozzle cantilever as the coating liquid nozzle. Therefore, first, the solvent nozzle is arranged at the center of the semiconductor wafer and the solvent is exhaled to the center. Then, the nozzle cantilever is driven to make the solvent nozzle And the coating liquid nozzle is displaced, so that the coating liquid nozzle is located almost at the center of the wafer. On the one hand, during this displacement time (for example, about 丨 seconds), the wafer is rotated to the diameter of the solvent. In other words, in the past, when the solvent was ejected, the solvent was also diffused at the above-mentioned shift time, and then the coating liquid was ejected on the wafer. However, when the pre-wetting process as described above is performed, it is used as the diluent. Other solvents include high-volatility solvents with high volatility, such as butyl acetate. Due to the extremely fast drying speed of the highly-volatile solvents, as mentioned above, for example, the displacement of the two nozzles and the diffusion of the solvent are performed simultaneously. Then, when the coating solution is discharged on the wafer, when the coating solution is discharged, the drying of the highly volatile solvent has been performed. When the coating solution reaches the peripheral portion of the semiconductor wafer, the highly volatile solvent has been exhausted. In this situation, because the effect of pre-wetting cannot be fully exerted, and the consumption of the coating liquid cannot be sufficiently reduced, and the temperature of the semiconductor wafer is lowered due to the heat of vaporization of the highly volatile solvent during drying. In particular, the temperature of the peripheral portion of the wafer makes the thickness of the outer peripheral portion thinner. [Summary of the Invention] The object of the present invention is to provide a coating Forming method and coating device 'Even in the case of a highly volatile solvent, not only the coating liquid is coated with the solvent and the substrate surface is wetted with the solvent before the so-called pre-wetting process. This paper applies Chinese national standards (CNS > A4 specifications (210x297) Gongai > ------------ Equipment ---------- Order! ---! Line (please read the unintended items on the arm surface before filling out this page) Ministry of Economic Affairs Printed by the Consumer Property Cooperative of the Intellectual Property Bureau 440922 A7 440 923_Bτ 5. In the description of the invention (3), it is possible to suppress the decrease of the coating film thickness. In order to solve such problems, according to the first aspect of the present invention, it is contained in a processing room. The coating film forming method for discharging a coating liquid on the first and second surfaces of the substrate on the first and second surfaces to form a coating film includes a method in which a solvent discharge nozzle is positioned at a discharge position on the substrate, and the solvent is discharged from the solvent. A stage in which the nozzle discharges the solvent on the first surface; a stage in which the substrate is rotated to diffuse the solvent on the first surface; and the coating liquid is ejected from the nozzle on the substrate. At the position ', the substrate is rotated, and the coating liquid is discharged from the coating liquid discharge nozzle onto the first surface to form a coating film before the solvent is vaporized. According to a second aspect of the present invention, the coating apparatus includes a turning device capable of rotating a substrate having the first surface and the second surface at a variable speed; a solvent discharge nozzle that discharges a solvent on the first surface; The solvent is supplied to the solvent supply portion of the solvent discharge nozzle; the coating liquid discharge nozzle is provided to discharge the coating liquid on the first surface; the coating liquid supply portion is provided to supply the coating liquid to the coating liquid discharge nozzle; and the solvent discharge nozzle and the foregoing are held. A nozzle cantilever that ejects and moves the coating liquid; and a control device that controls the turning device, the nozzle cantilever, the solvent supply section, and the coating liquid supply section; and the control device controls the nozzle cantilever and makes The solvent ejection nozzle position is on the first surface ejection position; the solvent supply unit is controlled and the solvent is ejected from the first surface by the solvent ejection nozzle; the rotation device is controlled to rotate the substrate and diffuse the solvent ; Control the nozzle cantilever so that the coating liquid is ejected from the paper; Home Standard (CNS) A4 Specification (210 X 297 mm) (Please read the notes on your mouth before filling in this page> * ♦ * _ n I 1 1 ϋ. I I I n ϋ I ϋ ϋ 6 Economic potential Wisdom and time bureau employee consumer cooperation Du printed A7 ^ ~ -----— B7____ V. Description of the invention (4) The nozzle position is at the aforementioned discharge position on the aforementioned first surface; the aforementioned coating liquid supply section is controlled by the aforementioned The coating liquid discharge nozzle discharges the coating liquid onto the first surface; before the solvent is vaporized, the rotating device is controlled to rotate the substrate and diffuse the coating liquid. In the present invention, the coating liquid is formed by a pre-wetting process. The coating film is formed before the vaporization of the highly volatile solvent as a solvent. Therefore, when the coating liquid reaches the periphery of the wet substrate, the highly volatile solvent has sufficiently moistened the substrate. The effect of wet processing. In addition, since the coating solution can be coated before the solvent is evaporated from the substrate, the temperature of the substrate is reduced due to the heat of vaporization of the solvent, especially the temperature of the substrate is reduced. inhibition Reduction of the film thickness at the outer periphery of the board. [Embodiment of the invention] The first embodiment of the present invention will be described below. The first to third processes are the coating of individual semiconductor wafers (hereinafter referred to as "wafers"). The overall configuration diagram of the development processing system 1; the first diagram is a plane, the second frame is a front surface, and the third diagram is a back surface. The coating development system 1 is provided with a circle as shown in the first circle. A large number of wafer cassettes CR will be used as the wafer W for the processing substrate. For example, 25 wafers will be moved out of the system from the outside, or the system will be used to remove the wafers W from the wafer cassette CR. Or, the cassette storage station 10 for carrying out processing is a processing station in which a variety of blade-type processing units that perform a predetermined process for each wafer W in a coating and developing stage are arranged in a plurality of stages at a predetermined position: and The continuous cost paper size formed by the interface unit 12 which is adjacent to the processing station 11 and is provided with an exposure device (not shown in the circle) for delivering wafers W for processing is applicable to the Chinese National Standard (CNS) A4 specification (210 * 297 males * > I I ----------installed! --- Order ------- Line (Please read the precautions of the arm surface before filling out this page) 440922 440923

V. Description of Invention (5) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In the aforementioned card E storage station 10, as shown in the first circle, the cassette holds a plurality of wafer cassettes CR, for example, four wafer cassettes CR at positions of the nibble projections 20a on the 020, Each wafer entrance and exit faces the n side of the processing station and is placed in a row in the X direction; the cassette arrangement direction (χ direction) and the wafer arrangement direction of the wafers stored in the wafer cassette CR (ζ direction) : Vertical direction) The moving wafer carrier 21 is formed in each wafer card! CR selective access status. In addition, the wafer transfer body 21 has a structure of freely rotating in the 0 direction. As described later, the third processing unit group on the n side of the processing station is aligned with an alignment unit (ALIM) and an extension unit ( Εχτ) is also accessible. Located at the aforementioned processing station 11 ', as shown in the first circle, a vertical transfer type main wafer transfer facility 22 having a crystal perimeter transfer device is installed, and all processing units around it are arranged in a plurality of combinations and arranged in multiple stages. . As shown in the third circle, the main wafer transfer facility 22 is located inside the cylindrical support vessel 49, and is equipped with a wafer transfer device 460 with a vertical lift (z direction) for freely lifting. The cylindrical support 49 and the motor (Fig. The rotation axis is not connected), and the rotation axis of the motor is used to rotate the rotation axis as the center with the wafer transfer device 46. Therefore, the wafer transfer device 46 is formed to rotate freely in the 0 direction. status. The cylindrical support 49 may be rotated by the motor described above, and may be connected to another rotating shaft (not shown in the figure) to form a continuous state. The wafer transfer device 46 is provided with freedom in the forward and backward directions of the transfer base 47. The paper standard is applicable to 0 national standards < CNS > A4 specifications (210 X 297 public love)

-_. 1 · 丨 丨 丨 · _ " · ι! ·· _ ^ ·! — Order · ——1!-· I (Please read the precautionary notes before filling out this page) I Intellectual Property Bureau, Ministry of Economic Affairs A7 printed by the employee consumer cooperative. V. Description of the invention (6) The majority of the root holding members 48 are moved, and such holding members are used to realize the delivery of the crystals w between the processing units. Also 'as shown in Fig. 1' In this example, the system can be configured with five processing unit groups G, G2, G3, g4, and G5; the i and second processing unit groups 01 and G2 Multi-segment units are placed on the front (front of the middle) of the system. Most units of the third processing unit are located adjacent to the Cali storage station. The multi-segment units of the fourth processing unit group G4 are placed on the adjacent interface. The multi-stage unit configuration of the fifth processing single π group 05 may be arranged on the back side. As shown in FIG. 2, in the j-th processing unit group & suction cup 的, two spinner-type processing units that place the wafer W on a spin chuck and perform predetermined processing, such as the spinner-type processing The unit is a protective film coating processing unit (COT) and a developing unit (DEV) in a two-fold stacking order from bottom to top. The protective film coating processing unit (cot) uses a protective film liquid as a coating liquid. There are also two spinner-type processing units in the second processing unit group A. For example, the protective coating application unit (cot) and the development unit (DEV) are overlapped in a two-stage order. This type of protective film is coated with a treatment sheet (COT), and the drainage of the protective liquid is troublesome on the mechanical surface, so it is appropriate to arrange it in the lower section. However, it is of course possible to address the need for proper configuration in the previous paragraph. As shown in Fig. 3, the "third processing unit group 03" is an open processing unit that places the wafer w on the mounting table SP and performs a predetermined process, for example, a cooling process (C0L) to improve the protective film Adhesive unit (AD) with so-called hydrophobization treatment and school-based paper size correction for position correction apply Chinese National Standard (CNS) A4 specification ⑵Q χ 297

— — — — — — — — — — — — — II {Please read the precautions before filling in this page before filling out this page)-丨 ·· 9 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 440922 440 923 A7 ______B7______ V. Description of the invention (7) Straight unit (ALIM), extension unit (EXT), pre-baking unit (PREBAKE) for heating treatment before exposure processing and POBAKE after heating treatment after exposure processing; bottom-up The sequence is repeated eight times. The fourth processing unit group G4 'is also an open processing unit, such as a cooling unit (COL), an extension, a cooling unit (EXTCOL), an extension unit (EXT), a cooling unit (COL), a pre-baking unit (PREBAKE), and a post-baking The order of the units (POBAKE) is from bottom to top, for example, it is in a state of 8 lanes. Therefore, the cooling unit (COL) and extension / cooling unit (EXTCOL) with a low processing temperature are arranged in the lower stage, and the pre-baked unit (PREBAKE), post-baking unit (POBAKE), and an adhesion unit (AD) with a high processing temperature are arranged. Below the upper section, the mutual interference of heat between the units can be reduced. Of course, any arbitrary multi-stage configuration is fine. The interface portion R, as shown in the first paragraph, has the same depth direction (X direction) as that of the processing station, and the width direction is set to a relatively small size β and is located on the front of the interface portion 12. It is equipped with a two-stage transportable detection cassette CR and a fixed-type buffer card gBR: It is located on the other side of the back and is equipped with a peripheral exposure device 23; it is also located in the center and is equipped with a crystal Hauling body 24. The wafer transfer mechanism 24 is moved in the X and Z directions and is accessed by the two cassettes CR, BR and the peripheral exposure device 23. The wafer transfer body 24 is also freely rotating in the 0 direction. The state is formed in a form that can be accessed by the extension unit (EXT) of the multi-stage unit belonging to the fourth processing unit group G4 of the aforementioned processing station 11 and the wafer delivery table (not shown in the circle) adjacent to the exposure device side. The paper size applies the Chinese National Standard (CNS) A4 specification (210 * 297 mm> — «— — — — — — — — — — — — — I — — — — — — — — III. — I. (Please Read the notes on your face first and then fill out this page) 10 A7 —________ B7 ___ V. Description of the invention (8). Also in the aforementioned coating development processing system 1, as shown in Figure 1, it is located in the main The back side of the wafer transfer facility 22 can also be arranged with the majority of the fifth processing unit group & indicated by dotted lines. The multi-stage units of the fifth processing unit group are viewed along the main wafer transfer facility 22 The guide rail 25 can be moved to the side Therefore, when the multi-stage unit of the fifth processing unit group is installed as shown in the figure, the sliding portion of the guide rail 25 can secure the space portion, and the main wafer transfer equipment 22 can be easily repaired from the back. The multi-stage unit of the fifth processing unit group & is not limited to such a linear sliding displacement along the guide rail 25, but reciprocates back and forth like the arrow shown by the one-point lock line in FIG. The configuration state of shifting out of the system and returning it also ensures easy maintenance of the space for the main wafer transfer equipment 22. The cassette storage station 10 in the protective film coating development processing system uses wafers. The round transfer body 21 takes out one wafer w from the wafer card £ CR and transfers it to the extension unit (EXT) of the processing unit group G3. Then, the wafer W passes through the wafer transfer device 46 'of the main wafer transfer device 22 First, a hydrophobization process (HMDS process) is performed in the adhesion processing unit (AD) to improve the fixation of the protective film. This process is accompanied by heating, and the subsequent wafers are transferred to the cooling system by a wafer transfer device 46 '. Unit (COL) for cooling The next wafer w is transferred to the protective film coating processing unit (cot) via the wafer transfer device 46, and a coating film is formed as described later. The wafer after the coating process is passed through a prebake unit (prebake). After pre-baking treatment, cooling treatment is performed in the cooling unit (COL). After cooling, the paper size applies the national standard (CNS > A4 specification (210 X 297 male t > ----------- --- M, — (Please read the notes on the mouth first and then fill out this page)-= o. -Line. Printed by the Ministry of Economic Affairs & • Production Bureau Employee Consumer Cooperative 11, 11,440 922 " 440 92 3 A7 ----- B7 V. Description of the invention (9) The wafer w is transferred to the alignment unit (ALIM), and after the positioning process, it is transferred to the extension unit (EXT) of the processing unit group G4. The subsequent wafer W is transferred to the interface section 12 through the wafer transfer unit 24. After the peripheral exposure device 23 is used to remove the excess coating liquid through the peripheral exposure processing, the exposure device is arranged on the adjacent interface 12 and is not shown in the figure. The exposure process is performed in a predetermined circle. The exposed wafer W is returned to the boundary portion 12 and transferred to the extension unit (EXT) by the wafer transfer unit 24. Then, the wafer W is transferred to any one of the post-baking units (POBAKE) via the wafer transfer device 46 ', and then subjected to exposure and baking processing, and then cooled by the cooling unit (COL). The subsequent wafer W is transferred to a development unit (DEV), where the exposure pattern is developed. After the development is completed, the wafer W is transferred to a post-baking unit (POBAKE) at any place and subjected to a post-baking process. Then, the wafer W is cooled by a cooling unit (COL). After such a series of processing is completed, it is returned to the cassette storage station 10 via the extension unit (EXT) of the processing unit group G3 to accommodate one enrolled cassette CR. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs t ϋ I n I nin ϋ I · nn (Please read the note on your mouth before filling in this page) Next, apply the protective film to the processing unit in the first embodiment (COT). Figures 4 and 5 show a schematic cross-sectional view and a schematic plan view of the overall configuration of a protective film coating processing unit (COT). A ring-shaped suction cup CP is arranged at the center of the protective film coating processing unit (COT), and a rotating chuck 52 is arranged inside the suction cup CP. The spin chuck 52 holds the wafer N in a fixed state by vacuum suction, and is rotated by a drive motor 54. The drive motor 54 may be arranged in the opening 50a provided in the unit bottom plate 50, for example, via aluminum metal. The paper size applies the Chinese National Standard (CNS) A4 specification (210 * 297 public *). 12 Consumers ’cooperation with the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed A7 B7 V. Description of the invention (10) The cap-shaped flange member 58 formed by the invention is combined with an elevating driving device 60 and an elevating guiding device 62 composed of, for example, an air cylinder. A cylindrical cooling sleeve 64 made of SUS is installed on the side of the swing motor 54, and a flange member 58 is installed so as to cover the main half of the cooling sleeve 64. When the protective film is applied ', the lower end 58a of the flange member 58 is in close contact with the unit bottom plate 50 near the outer periphery of the opening 50a, so that the inside of the unit is sealed. When the wafer W is delivered between the spin chuck 52 and the holding member 48 of the main wafer transfer facility 22, the lift driving device 60 lifts the drive motor 54 and the spin chuck 52 to the lower end of the flange member 58 formed on the upper side. A state of being floated by the unit floor 50. A coating liquid nozzle 86 for discharging the coating liquid onto the surface of the wafer W is connected to a coating liquid supply pipe 88, and the coating liquid supply pipe 88 is connected to a pneumatic valve 130 and a suction valve 131. The coating liquid nozzle 86 is detachably attached to the front end of the coating liquid nozzle scanning arm 92 via a nozzle cantilever 100. The coating liquid nozzle scanning arm 92 is an upper end of a horizontally movable vertical support member 96 mounted on a guide rail 92 laid in the Y direction on the unit bottom plate 50 via a Y-direction driving device and vertical support not shown in the figure. The member 96 is in a state of being integrally moved in the Y direction. In addition, the coating liquid nozzle scanning arm 92 selectively installs the coating liquid nozzle 86 in the coating liquid nozzle standby portion 90, so that it is possible to move in both the Y direction and the X direction at a right angle. The X direction also moves. In addition, the spit of the coating liquid nozzle 86 is inserted into the opening 90a of the solvent environment chamber at the coating liquid nozzle standby portion 96. Due to the environment exposed to the solvent in this paper, the Chinese paper standard (CNS > A4 specification (210 X 297) 13) !!! _ Installation! —Order--! _Line (please read the notes on the mouth first and then fill out this page) 440922 440923 A7 B7__ 5. In the description of the invention (11), the coating liquid forming the tip of the nozzle will not cause And the coating liquid nozzles 86 are provided, for example, a state in which such nozzles are separately used according to the type of the coating liquid. The coating liquid nozzle scanning arm 92 is located at the tip of the coating liquid nozzle scanning arm 92 (the nozzle cantilever 100). ), A solvent for wetting the wafer surface on the wafer surface before discharging the coating liquid on the wafer surface is mounted, for example, a solvent nozzle 101 for discharging the solvent. The solvent nozzle 101 is supplied through a solvent not shown in the figure. The tube is connected to the solvent supply unit. The solvent nozzle 101 and the coating liquid nozzle 86 are installed at the positions of the respective discharge ports on the line along the Y-movement direction of the coating liquid nozzle scanning arm 92. They are located on the guide rail 94 Not only is a vertical support member 96 supporting the coating liquid nozzle scanning arm 92, but also a vertical support member 122 supporting the side rinsing nozzle scanning arm 120 and movable in the γ direction. The side rinsing nozzle scanning arm is provided. A side rinsing nozzle 124 for side rinsing is installed at the tip of 120. The side rinsing scanning arm 120 and the side rinsing nozzle 124 are located on the side of the suction cup CP by a Y-direction driving device (not shown). The set side rinsing nozzle standby position (solid line position) and the rinsing liquid discharge position (dotted line position) set directly above the peripheral portion of the wafer W provided on the rotary chuck 52 form a parallel or linear movement Fig. 6 shows the configuration of the control system of the coating liquid coating processing unit (cot). The controller 133 of the coating processing unit controls each part in the coating liquid coating processing unit (COT). The drive motor 54 for controlling the rotary wafer W, the pneumatic valve 130 for switching the supply and stop of the coating liquid, the return suction 131 for sucking back the coating liquid, and the solvent supply section for supplying or stopping the solvent 132. The size of this paper is applicable to the standard of China B. B home standard (CNS) A4 < 21G X 297 mm) J — — — — — — — — — n II ^ III ϋ II -6J · II n IIIIII n I. (Please read the notes before filling in this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs · 111111111 · 14 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The coating liquid coating operation of the coating liquid coating processing unit (COT) configured as described above will be described with reference to FIGS. 7 and 8. Among them, a solvent is used to perform a so-called pre-wet treatment to form a coating film with a small amount of coating liquid. First, the wafer W is carried directly above the suction cup CP in the coating liquid coating processing unit (COT), and the following The wafer w is sucked by the spin chuck 52 through the vertical space, and then a series of processes (steps 1 to 14) for applying the coating liquid are performed as shown in the eighth circle. The surface of the wafer W is coated with a coating liquid on the surface of the first surface, and the inside of the wafer W is sucked by rotating the disk. As shown in FIG. 8, in the phase i, “the movement of the nozzle cantilever 100 is started” and as shown in FIG. 7A, the discharge position of the solvent nozzle 100 is moved to the wafer W by several hands. The location of the center. At this moment, the rotation of the wafer w is stopped. Next, in the second stage, a solvent (a highly volatile and highly volatile solvent such as butyl acetate) is ejected from the solvent nozzle 100 onto the wafer. At this moment, the rotation of the wafer w is also stopped. "In stage 3, 'as shown in Section 7B 圊, the nozzle cantilever 10 moves, and the discharge opening of the coating liquid nozzle 86 is located at the center of the wafer w, and the solvent nozzle 101 is deviated from the center of the wafer W to form a shift in the positions of the nozzles. Between the displacement time (Te) at this moment, that is, between 1.0 movements, the discharged solvent is placed on the wafer W. In stage 4, after the nozzle position of stage 3 is shifted, the predetermined micro-time (Ts) is within 0.1 seconds, the wafer trade is rotated and the wafer paper size is in accordance with Chinese national standards ( CNS) A4 specifications (210 X 297) — — — — — — — — — — — — — — — — — — — — III (Jingxian iw read the notes before filling in this page) 15 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 440922 A7 > Λ 4 Q 9 2 3_ β7_ 5. Description of the Invention (π) The solvent on w diffuses in the diameter direction. The first rotation of the wafer is performed at a low speed ', that is, at a rotation speed of 1,000 rpm. Therefore, before the application of the coating solution, the entire surface of the wafer W surface is wetted with a solvent, and a so-called pre-wetting treatment is performed. At this moment, the rotation of the crystal garden w when the solvent is diffused is performed at a lower speed than the rotation speed of the wafer W when the subsequent coating liquid is applied, so that the drying of the solvent is hardly performed. In stage 5, 'the rotation speed of the wafer w is converted to 4000 rpm as the second speed. At this moment, the coating liquid is discharged onto the wafer W from the coating liquid nozzle 86. After the coating liquid discharged on the wafer W is diffused from the center of the wafer W toward the periphery by a centrifugal force, a protective film as a coating film is formed on the wafer w. Therefore, the discharged solvent is placed on the wafer w between the displacement time (Te) of the two nozzles 86 and 10 seconds, and then the tiny time (Ts) is within 0.1 seconds. The solvent is diffused; when the solvent is diffused, the coating liquid is immediately discharged, so immediately before the coating liquid is discharged, that is, the solvent diffuses into a state of 0.1 seconds before. Therefore, even when a highly volatile solvent is used at the time when the coating liquid is discharged, the drying is hardly performed. In particular, when the coating solution reaches the periphery of the wafer W, the highly volatile solvent sufficiently wets the wafer W ', and the pre-wetting treatment can be sufficiently performed. In addition, since the coating liquid can be coated before the highly volatile solvent dries, the temperature of the wafer W can be reduced due to the heat of vaporization of the solvent, especially the temperature drop around the wafer w can be suppressed. The film thickness at the outer periphery of the wafer is reduced. In addition, the above-mentioned minute time (Ts) is preferably as short as possible from the viewpoint of preventing the volatilization of the solvent as much as possible, although as in this example, the Chinese paper standard (CNS > A4 standard (210 * 297 public love) * 1 IH · 1 n deduction δ, · a— ai a— I aa, I nnnn I—. (Please read the precautions on the arm surface before filling out this page) 16 Employees of the Economic Bank Intellectual Property Bureau Consumption cooperation Du printed A7 B7 V. Description of the invention (14) It is ideal if the time is sufficiently short, but it is also possible to adjust it appropriately for the type of solvent. In phase 6, after the dripping of the coating solution is completed, the time is i seconds. Decrease the rotation speed of the wafer, that is, rotate the wafer w at a rotation speed of 200 rpm. After this deceleration, the applied coating liquid and the outer peripheral portion of the wafer w also form the same layer as the central portion. The coating film is made uniform and distributed with a constant thickness to extend over the entire range of the wafer W. In addition, even when the amount of dripping of the coating liquid to each wafer is reduced, the film thickness of the film after the coating process can be Make adjustments uniformly and to a given thickness In stage 7, after the deceleration step in stage 6, the rotation speed of the wafer w is accelerated to a rotation speed of 3000 rpm, and the wafer is rotated for 25 seconds. Therefore, 'the remaining coating liquid is thrown off' At this time, the nozzle cantilever is returned In stage 8, the rotation speed of the wafer W is decelerated to a rotation speed of 1500 rpm, and the wafer W is rotated for 5 seconds. At this time, the side rinse nozzle is moved only by the outer edge portion of the wafer W 1 mm to the inside. In stage 9, the rotation speed of the “system wafer W is not changed, and the wafer w is rotated.” In one second, the rinsing liquid is discharged from the side rinsing nozzle, and the outer edge of the wafer W is discharged. In stage 10, the rotation speed of the wafer W is unchanged, and the wafer w is rotated, and the rinsing liquid is discharged from the side rinsing nozzle and the back rinsing nozzle within 5 seconds, and the wafer W is discharged. The outer edge portion is cleaned. At this time, the side rinse nozzle is moved only 2 mm from the outer edge portion of the wafer W to the inner position. The rear rinse nozzle is moved from the outer edge portion of the wafer W to the inside of the wafer W. The paper size within 2mm of the side applies the Chinese national standard (CNS > A4 size (210 X 297 public director > — — — — — — — — — — — — — · 1111111 · 11111111 (Please read the notes on your mouth before filling this page) 17 440922 ^ 40923 A7

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Location on the side of the invention description (IS). Fig. 14 shows a portion of the outer edge portion of the wafer w before being washed with a rinse solution. As shown in Fig. 14, after the coating liquid is diffused, the coating liquid flows back to the back side of the outer edge portion of the wafer W. In addition, the film thickness of the coating film on the outer edge portion of the wafer w is thicker than the film thickness of the coating film applied on the center portion of the wafer W to form a convex state. In stages 9, 10, and later-mentioned stages, the coating film protruding from the outer edge portion of the surface of the wafer W is removed by using a rinsing liquid discharged from the side rinsing nozzle 305. In step 10, the coating film formed on the outer edge portion of the wafer W is removed by the rinse liquid discharged from the rear-side rinse nozzle 304. In phase 11, while the rinsing liquid is discharged from the side rinsing nozzle, the rotation speed of the wafer W is kept constant, and the wafer W is cleaned in one second while the wafer W is rotated. At this time, the side rinsing nozzle returned from the outer edge portion of the wafer W to the inner side of only 1 mm. On the other hand, the discharge of the rinsing liquid from the rear rinsing nozzle is stopped. Thereafter, in phase 12, the discharge of the rinsing liquid from the side rinsing nozzle is stopped. At this time, the rotation speed of the wafer W is not changed, and the wafer W is rotated in one second.

In phase 13, the rotation speed of the wafer W is accelerated, and the wafer W is rotated at a rotation speed of 2000 rpm for 5 seconds. In the meantime, the side rinse nozzle returns to its original position. Therefore, before the side spray nozzle returns to the original position, since the rinsing liquid discharge step is not stopped, the side rinsing nozzle can effectively prevent the rinsing liquid from being sprayed onto the wafer W without being prepared. Also, in phase 13, when the side rinsing nozzle returns to its original position, and the wafer size of the paper is adapted to the standards of China's homeowners < CNS) A4 specification (210 297 gt), snow 羼 —————— — — — —— — — 1 · ¥ · 111111 t · !! 11 — * ^ I, M — — — — — — II I 1 < Please read the precautions before filling in this page) 18

V. Description of the invention (16) The speed of rotation printed by the Consumer Cooperatives of the Economic and Intellectual Property Bureau of the People's Republic of China is accelerated, and the rinsing liquid of the rear side rinse and the side rinse is thrown away. After the stage such as this has completely ended, in stage 14, Wafer rotation is decelerated and stopped to complete the coating process. Next, the coating development processing system in the second embodiment will be described. The application mode is different from the coating liquid coating operation in the coating liquid coating processing unit of the first embodiment described above, and the same points will be described. The description is omitted. In the first embodiment, as shown in stage 3, the wafer w during nozzle movement does not rotate, and the solvent is placed on the wafer w. The wafer w is then moved at a low speed as shown in stage 4. Go back. On the other hand, the point t 'in the third embodiment is different from that in the first embodiment in that the wafer w is rotated at a low gravity during the movement of the nozzle. The application operation of the application liquid in the second embodiment is described below using the ninth circle. As shown in FIG. 9, in the stage 丨, the movement of the nozzle cantilever 100, which is the same as that of the first embodiment, starts, and the discharge position of the outlet of the lotion nozzle ιιι is shown as shown in FIG. 7; The wafer is moved to a state where the wafer w is almost at the center. At this time, the rotation of the wafer W is stopped. Next, in the second stage, a solvent such as butyl acetate, which is highly volatile and highly volatile, is discharged onto the wafer W from the solvent nozzle 101 in the same manner as in the first embodiment. At this time, the rotation of the wafer w is cleaned. STOP status. In stages 3 and 4, the nozzle cantilever 100 ′ shown in FIG. 7B is as shown in FIG. 7B. When the discharge opening of the coating liquid nozzle 86 is located at the wafer ... almost at the center, the solvent nozzle 101 deviates from the center of the wafer W. Displace the nozzle position of the engine. The displacement time at this moment, that is, in the first 09 seconds between seconds, if the paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 male; 8> — I-pack ---- 1 order ·-! — — · Line (please read the notes on the mouth first and then fill out this page) 19 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 440922 440923 ° A7 ------ B7 V. Description of Invention (17) Paragraph 3 The rotation of the wafer w is stopped. The remaining o. I seconds, as shown in stage 4, the wafer w is rotated at a predetermined low speed, i.e., i.00rprn. The solvent on the crystal W Diffusion in the diameter direction. Therefore, the solvent first wets the entire surface of the surface of the wafer W before the coating solution is applied for so-called pre-fishing treatment. Therefore, 'diffusion of the solvent is also in progress while the nozzle cantilever is moving' The movement of the cantilever and the diffusion of the solvent are performed separately—comparison of the embodiment can shorten the overall processing time. In stage 5, the wafer trade is rotated at a high speed in the same manner as in the first embodiment, that is, it is converted to 4 °. 〇〇rpm rotation, one side by coating The nozzle 86 discharges the coating liquid onto the wafer%. The coating liquid supplied on the wafer spreads from the center of the wafer W toward the periphery by centrifugal force, so that a coating film is formed on the wafer W. Therefore, the two nozzles 86, Between the shift time of 101 (1.0 seconds), the solvent on the wafer W is diffused and after the solvent is diffused, the coating liquid is immediately discharged, so immediately before the coating liquid is discharged (0 · 丨 seconds ago), A diffusive state of the solvent is formed. Therefore, even when the highly volatile solvent is used at the time of discharging the coating liquid, the drying is hardly performed. Especially when the coating liquid reaches the periphery of the crystal W, the highly volatile solvent is sufficient. The wafer w can be wetted to sufficiently perform the wetting treatment. In addition, the coating liquid can be coated before the highly volatile solvent is dried. Therefore, the temperature of the wafer W is reduced due to the heat of solvent vaporization. The temperature decrease at the peripheral portion of the wafer w is small, and it is possible to suppress the decrease in the film thickness at the outer peripheral portion of the wafer. In addition, the time for the diffusion of the solvent is as short as possible from the viewpoint of preventing the evaporation of the solvent as much as possible. , As in this example, it is set to 〇 丨 seconds --------------- y ----- 丨 _ 丨 order ----- I --- line -H (please first Read the cautionary notes before filling out this page >

-20-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. The invention description (is) is suitable for a very short period of time and can be adjusted appropriately for the type of solvent. In the sixth stage, after the dripping of the coating liquid is completed in the same manner as in the first embodiment, the rotation of the wafer W is decelerated for one second, that is, the wafer W is rotated at a rotation speed of 2000 rprn. After the decelerated coating liquid is applied, the outer periphery of the wafer W is formed in the same layer as the central portion, and the coating film can be spread over the entire range of the wafer W to make it uniform and distributed in a predetermined thickness. In addition, even if the amount of dripping of the coating liquid on each wafer W is reduced, the film thickness of the film after the coating process can be made uniform and adjusted according to a predetermined film thickness (in stage 7) is the same as in the first embodiment. After the deceleration step of the phase 6, the wafer W was accelerated in 25 seconds by 'accelerating the rotation speed of the wafer W to a rotation speed of 3000 rpm'. Therefore, the remaining coating liquid is thrown away. At this time, the nozzle cantilever 100 returns to the original position. In the stage 8, the rotation speed of the wafer w is decelerated in the same manner as in the first embodiment, and the wafer w is rotated for 5 seconds. At this time, the side rinse nozzle is moved from the outer edge of the wafer W by only 1 mm to the inner side. In stage 9, the rotation speed of the wafer W is kept the same as in the first embodiment, and the wafer W is rotated in a state of 1 second by the side rinsing nozzle to spit out the rinsing liquid in the same state as the first embodiment. Wash the edges. In stage 10, the rotation speed of the wafer W is kept the same as in the first embodiment, and the wafer W is rotated by the side rinsing nozzle and the back rinsing nozzle to discharge the rinsing liquid within 5 seconds while the wafer W is rotating. The outer edge portion of the wafer W is cleaned. At this moment, the side rinsing nozzle is moved from the outer edge of the wafer W by only 2mm to the inner. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------- Assembling -------- Ordering -------- II--line (please read the precautions on the back before filling this page) 21 Α7 Β7 440923 V. Location of (l9) side of invention description. Then, the rear-side rinsing nozzle is moved from the outer edge of the wafer w to a position 2 mm inside the back side of the wafer W. In phase 11, the same way as in the first embodiment is that the rinsing liquid is discharged from the side rinsing nozzles, while the rotation speed of the wafer W is not changed, and the wafer W is rotated in one second while the wafer W is in the rotating state. Wash the periphery. At this moment, the 'side rinse nozzle' returns from the outer edge of the wafer W to the inner side of only 1 mm from the outer edge of the wafer w. The discharge of the rinsing liquid from the rear rinsing nozzle is stopped. Thereafter, in the 'stage 12', the discharge of the rinsing liquid from the side rinsing nozzle is stopped as in the first embodiment. At this moment, the rotation speed of the wafer W is not changed, and the wafer W is rotated in one second. In the phase 13, the wafer w is rotated for 5 seconds while the rotation speed of the wafer w is accelerated to a rotation speed of 2000 rpm as in the first embodiment. In the meantime, the 'side rinsing nozzle' returns to its original position. Therefore, before the side rinsing nozzle returns to its original position, since a step of stopping the discharge of the rinsing liquid is provided, it is possible to effectively prevent the side rinsing nozzle from preparing the next spray and the wafer W after the rinsing liquid is prepared. Further, in phase 13, when the side rinsing nozzle returns to the original position and the rotation speed of the wafer W is accelerated, the back rinsing and the side rinsing rinsing liquid are thrown away. After all these stages are completed, in stage 14, the rotation of the wafer W is decelerated to stop the completion of the coating process step. Next, a coating development processing system in the third embodiment will be described. The third embodiment is different from the structural portion of the coating liquid coating processing unit of the first embodiment described above, and the same points will be explained. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). _In I nnnn I 1 ϋ · nn 1 1 · II tt (Jing first read the notes on the back before filling out this page) Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 22 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Preparation A7 B7 5. The description of the invention (20) is omitted. The coating liquid coating processing unit in the third embodiment, as shown in Section 10, is the coating liquid coating processing unit in the first embodiment, and is more configured. The structure of a krypton gas supply device 201 that strongly blows the n2 gas to the periphery of the wafer W. As shown in FIG. 10A, when the solvent is supplied to the wafer, the operation of the N2 gas supply device is stopped. Then, as shown in FIG. 10B, when the solvent in the eighth round stage 4 is diffused, the n2 gas supply device 201 strongly sucks the Qin gas to the outer edge portion of the wafer. Therefore, the solvent is particularly important. The progress of gasification can significantly delay the drying of the wafer ... peripheral portion. Therefore, when the coating liquid reaches the wafer ... peripheral portion, the highly volatile solvent has sufficiently wetted the wafer W, so The pre-wetting process can be sufficiently performed. Next, the coating development processing system in the fourth embodiment will be described. The fourth embodiment is different from the structural portion of the coating solution coating processing unit of the first embodiment described above, and The description of the same points is omitted from the coating liquid coating processing unit in the fourth embodiment, and the coating liquid coating processing unit in the first embodiment is disposed as shown in the nth embodiment, and the peripheral portion of the wafer w is arranged. A heating device 202 for heating. The heating device 202 'is formed in a state surrounding the wafer w. In the heating device 202, when the temperature of the coating liquid coating processing unit is set to 23 ° C, for example, the temperature is set to be high. At a temperature of 1 to 2, a state where the periphery of the wafer w can be heated is formed. The heating device 202 is driven at least when the solvent is diffused. CNS) A4 grid (210 x 297 mm) ------------- install -------- order --------- line (please read the back first Please fill in this page for the matters needing attention.> 23 Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs can print 440 922 440 923 A7-B7 V. Invention description (21). The peripheral part of the wafer W, especially the solvent volatilization is significant Therefore, the temperature is likely to be lowered due to the heat of vaporization of the solvent, and the in-plane uniformity of the thickness of the coating film tends to decrease. In contrast, in the fourth embodiment, the arrangement of the heating device 202 is used. It is possible to suppress the decrease in the temperature of the peripheral portion of the wafer W caused by the vaporization heat of the circular solvent, and to improve the in-plane uniformity of the coating film thickness. Next, the coating development processing system in the fifth embodiment will be described. The 'fifth embodiment' is a point of difference in the structure of the coating liquid coating processing unit of the first embodiment described above, so the coating liquid coating operation portion is different. They are different, and explanations about the same points are omitted. As shown in the 12th and 13th circles, the coating liquid coating processing unit in the fifth embodiment, wherein the coating liquid nozzles 386 and the side rinse nozzles 30 are arranged at a distance of almost a radius of the wafer W; It is different from the first embodiment in terms of the two nozzles interlocking. As shown in Figs. 12 and 13, the solvent solvent 301 is attached to the tip of the coating liquid nozzle scanning arm 392. The solvent nozzle 301 is connected to the side rinsing nozzle 300 and the coating liquid nozzle 3 86 via the coating liquid nozzle cantilever 300. The coating liquid nozzle scanning arm 3 92 is mounted on the unit base plate on the guide rail 94 laid in the Y direction. The upper end of the vertical support member 96 can be moved horizontally. Member 96—the state in which the γ direction of the hip moves. In the twelfth circle and the thirteenth figure, the rear-side rinsing nozzle 30 is shown. The rear-side rinsing nozzle 304 is set in a state where the rear-side rinsing nozzle 304 is movable between the lower portion of the back surface of the wafer w and the outside of the wafer W in a horizontal direction. Apply the 13th and 15th drawings of the Chinese coating solution for the fifth embodiment. The paper size applies the National Standard for CNS A4 (210 X 297 cm). (Please read the note on the mouth first. Please fill in this page for more information) I. • I · 1 · II > ^ 1 ^ 1 ϋ ^ eJt III · a— III Hal— III n II n I— · 24 Economic and Intellectual Property Bureau Employee Consumption Cooperative Seal A7 B7 i. Description of the invention (22) To illustrate. Stage 15! In this case, when the movement of the nozzle cantilever 300 is started, the discharge position of the solvent nozzle 301 is moved to a position near the center of the wafer, and the coating liquid nozzle 386 is located near the periphery of the wafer w. At this time, the rotation of the wafer W is stopped. The rear nozzle position is in the original position. Next, in the second stage, as shown in FIG. 13A, a solvent such as butyl acetate, which is a highly volatile solvent, such as butyl acetate, is discharged onto the crystal circle W from the solvent nozzle 301. At this time, the rotation of the wafer w is stopped. In stage 3, as shown in circle 13B, the nozzle cantilever 300 is shifted, the discharge opening of the coating liquid nozzle 386 is located at the center of the hand of the wafer w, the solvent nozzle 301 and the side rinsing nozzle 3. 2 is located near the periphery. Specifically, the side rinsing nozzle 302 is located on the inside about 1 mm from the outer edge of the wafer. At this time, the displacement time (Te) of the nozzle cantilever, that is, the state in which the discharged solvent was placed on the wafer W in 10 seconds. The discharge port of the coating liquid nozzle 386 in the stage 4 is located almost at the center of the wafer w. The nozzle position is within a predetermined small time (Ts) immediately after the displacement. That is, within 0.1 seconds. The wafer W rotates at a set low speed, i.00 rpm. The solvent on the wafer W is diffused in the diameter direction. . Therefore, before coating the coating solution, the entire surface of the surface of the wafer W is wetted with a solvent, and a so-called pre-wetting process is performed. In stage 5, the rotation speed of the wafer W is rotated at a high speed, that is, converted to 400 rpm-side. While rotating, the coating liquid is discharged onto the wafer W by the coating liquid nozzle 386. The coating liquid supplied on the wafer W uses centrifugal force. The paper size is applicable to the Chinese Standard for Household Standards (CNS) A4 (21〇χ 297 mm) ------------ · I-$ < Please read the precautions before filling out this page > 25 Printed by the Intellectual Property Bureau Employees' Cooperative of the Ministry of Economic Affairs 4 40 922 ^ 4 40 92 3 A7 B7 V. Description of Invention (23) W Center It spreads to the periphery, so a coating film is formed on the wafer W. In stage 6, when the coating liquid is dropped, the rotation speed of the wafer W is reduced by only 1 second, that is, the wafer w is rotated at a rotation speed of 2000 rpm. By this deceleration, the same coating liquid is formed on the outer peripheral portion of the wafer W as the center layer, and the coating film can be spread over the entire range of the wafer W to make it uniform and distributed according to a predetermined thickness. In the case where the dripping amount of the coating liquid of the circle W is too small, the film thickness of the coated film can be uniform and adjusted according to a predetermined thickness. In the stage 7, after the deceleration step of the stage 6, the rotation speed of the wafer w is accelerated. The rotation speed to 3000 rpm makes the wafer W rotate for 25 seconds. Therefore, The remaining coating liquid is thrown away. At this moment, the rear nozzle 304, as described in Section 13B, is moved to a position near the peripheral portion inside the wafer W. In stage 8, 'the rotation speed of the wafer W is decelerated to The rotation speed of i500 rpm 'was allowed to rotate for 2 seconds. Then, as shown in FIG. 13B, the rinsing liquid was discharged from the side rinsing nozzle 302' to the outer edge of the crystal W. At this time, the nozzle 304, As shown in FIG. 13B, it is located near the peripheral portion inside the wafer w. Therefore, since the side rinse nozzle 302 and the coating liquid nozzle 386 'are disposed at a distance of almost the radius of the wafer W, when the coating liquid After the diffusion, the rinsing liquid can be discharged from the side rinsing nozzle 302 immediately. Therefore, compared with one embodiment, the movement time of the side rinsing nozzle in stage 8 in the eighth embodiment of the first embodiment can be eliminated, and the Reduce the overall processing time. In stage 9, the rotation speed of wafer W is not changed, and the wafer is adapted to the Chinese National Standard (CNS) A4 specification (210 X 297 Kg) at this paper size ----- ------- < ·! Order --------- line! H ------ ,, (Please read first Please fill in this page again) -n -1 I. 26 Printed by the Economic Village Intellectual Property Bureau Employee Consumption Cooperative A7 B7 V. Description of the invention (24) In the state of rotation, the side rinse nozzle and the rear side within 5 seconds The rinsing nozzle spit out the rinsing solution, and washed the outer edge of the crystal W. At this moment, the side rinsing nozzle was moved from the outer edge of the crystal garden W to only the inner position. And the rear rinsing nozzle was moved by the crystal The outer edge of the circle W is moved to a position 2 mm inside of the inner side of the wafer W. In stage 10, while the rinsing liquid is discharged from the side rinsing nozzle, the rotation speed of the crystal B1W is unchanged and the wafer w is rotated. The peripheral part of the wafer W is cleaned in 1 second. At this time, the side rinsing nozzle returns from the outer edge portion of the wafer W to the inside only 1 mm. On the other hand, the discharge of the rinsing liquid from the rear rinsing nozzle is stopped. In the subsequent stage U, the discharge of the rinsing liquid from the side rinsing nozzle is stopped. At this time, the rotation speed of the wafer W is not changed, and the wafer W is rotated in one second, and the movement of the nozzle cantilever to the original position is started. In stage 12, 'the rotation speed of the wafer W is accelerated, and the wafer W is rotated at a rotation speed of 2000 rpm for 5 seconds.' Using the acceleration of the rotation speed of the wafer W, the rinsing liquid of the post-rinsing and the side rinsing is thrown away. . When this type of stage is completely completed, in stage 13, the rotation of the wafer W is decelerated and stopped to complete the coating process step. The present invention is not limited to the embodiments described above. There are various possibilities for deformation. For example, in the embodiment described above, a coating device for applying a coating liquid to a semiconductor wafer is described. The present invention is also applicable when a coating liquid is applied to a substrate other than a semiconductor wafer, such as an LCD substrate. In addition, the coating film is not limited to other films such as a protective film, such as a polyimide film, and the like. This paper size applies to China National Standard (CNS) A4 specifications (210 * 297 feet) -------------- install --- I!-Order! ---- Line {Please read the precautions before filling in this page) 27 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 4 0 9 2 2; 4 4 0 9 2 3 A7 _ B7 V. Description of the invention (25) [Brief description of the drawing] The first unit (1) shows that the semiconducting semiconductor crystal (coated development processing system) in the form of the first embodiment of the present invention is a flat unit. FIG. 2 is a front view of the coating development processing system shown in FIG. The third circle is the back surface of the coating development processing system shown in the first frame. The fourth line shows the cross-section of the entire structure after the coating liquid coating processing unit is installed in the coating development processing system shown in the first line. Fig. 5 is a plan view of the coating liquid application processing unit shown in Fig. 4. Fig. 6 is a block diagram showing a control system for a coating liquid coating processing unit shown in Fig. 4; Fig. 7A is a pattern 显示 showing a state where the solvent is discharged from the solvent nozzle in the first embodiment. The 7B circle is a schematic view showing a state where the coating liquid is discharged from the coating liquid nozzle in the first embodiment. Fig. 8 is a table explaining a coating liquid application operation in a coating liquid application processing unit according to the first embodiment of the present invention. The ninth aspect is a table explaining the coating liquid application operation in the coating liquid application processing unit according to the second embodiment of the present invention. Fig. 10A is a cross-sectional view showing the configuration of a coating liquid coating processing unit in a third embodiment of the present invention, and showing a state where the solvent is discharged from a solvent nozzle; " 10B 圊 is a diagram showing the application in the third embodiment of the present invention. The composition section of the liquid coating processing unit is shown in section 圊, and the coating liquid is discharged from the coating liquid nozzle. The paper size is applicable to the Chinese national standard UJNS) A4 specification (210 X 297 public love) * '— — — — — — — ^ — — — — — — II · 1111111 · I (Jing first read the precautions for Ken Noodles and then fill out this page) 28 A7 B7 V. State diagram of invention description (26). The eleventh line is a sectional view showing the constitution of the coating liquid application processing unit in the fourth embodiment of the present invention. The twelfth line is a plan view showing a coating liquid application processing unit in a fifth embodiment of the present invention. Section 13A shows the cross section of the coating liquid coating processing unit in the fifth embodiment of the present invention, and shows the state where the solvent is discharged from the solvent nozzle. Section 13B shows the coating solution coating in the fifth embodiment of the present invention. A cross-sectional view of the processing unit, showing a state where the coating liquid is discharged from the coating liquid nozzle. The 14th line is a circle showing the state where the remaining coating liquid attached to the outer edge portion of the wafer W after the coating liquid is applied is removed by the side rinsing nozzle and the rear rinsing nozzle. FIG. 15 is a diagram illustrating the fifth embodiment of the present invention. Form of coating liquid coating operation in the coating liquid coating processing unit of a form. — — — — — — — — — — 1! · · 111 — II I order · 11! 1 · *! ^ {Please read the notes before filling out this page) Printed by the Economic Village Intellectual Property Bureau Staff Consumer Cooperative 29 This paper size applies the Chinese national standard (CNS > A4 specification (210 X 297 male * > 4 40 9 2 ^ " '4 40923 A7 V. Description of the invention (27) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 1 ... coating development processing system 10 ... cartridge storage station 11 ... processing station 12 ... interface section 20 ... cartridge mounting table 20a ... position protrusion 21 ... wafer transfer body 22 ... main wafer transfer device 23 ... Peripheral exposure device 24 ... wafer transfer body 25 ... guide rail 46 ... wafer transfer device 47 ... transfer base 48 ... holding member 49 ... cylindrical support 50 ... unit base plate 50a ... unit base opening 52 ... rotation clamp Plate (slewing device) 54 ... Drive motor 58 ... Flange member 58a ...... Flange member lower end 60 ... Lifting drive device element number comparison 62 ... Lifting guide 64 ... Cooling sleeve 86 ... Coating liquid nozzle (coating liquid discharge Nozzle) 88 ... Coating liquid supply pipe 90 ... Coating liquid nozzle to be 90a ... solvent environment chamber 〇92 ... coating liquid nozzle scanning arm 94 ... guide rail 96 ... vertical support member 100 ... nozzle cantilever 101 ... solvent nozzle 120 ... side rinsing nozzle scanning arm 122 ... vertical support member 130 .. · recycling Valve (coating liquid supply section) 131 ... Pneumatic valve (coating liquid supply section) 132 ... Diluent supply agent (solvent supply section) 133 ... Coating processing unit controller (control device) 201 ... N2 gas supply device 202 ... Heating device Paper size applies to Chinese national standard (CNS> A4 specification (21〇X 297 male β) 41 —---— — — — — — «— — mw n · ninn I line-, J! (Please read Note: Please fill in this page again) -I nnn · 30 A7 B7 V. Description of the invention (28) 300 ... Coating liquid nozzle cantilever 301 ... Solvent nozzle 302 ... Side rinsing nozzle 304 ... Rear rinsing nozzle 386 ... Coating liquid nozzle 388 ... Coating liquid supply pipe 392 ... Coating liquid nozzle scanning arms G, ~ G5 ... Processing unit group CR ... Portability detection cassette BR ... Stationary buffer cassette SP ... Mounting stage CP ... Suction cup DEV ... Development unit COT … Protective film coating sheet Element PREBAKE ... Pre-baking unit POBAKE ... Post-baking unit EXT ... Stretching unit ALIM ... Straightening unit COL ... Cooling unit AD ... Adhesive unit EXTCOL ... Stretching / cooling unit COT ... Protective film coating processing unit W ... Semiconductor wafer ( Substrate) (Please read the precautions on the back before filling out this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized for the Chinese National Standard (CNS) A4 (210 X 297 male *) 31

Claims (1)

A8B8C8D8 440922 440923 VI. Application for Patent Scope 1. A coating film forming method is a method of forming a coating film by discharging a coating solution on the first surface of a substrate having a first surface and a second surface accommodated in a processing chamber. The method includes the step of setting the solvent ejection nozzle position to the ejection position on the substrate and ejecting the solvent on the first surface from the solvent ejection nozzle; and rotating the substrate to diffuse the solvent on the first surface. Stage; and the coating liquid discharge nozzle is positioned at the discharge position on the substrate, and the substrate is rotated while the coating solution is discharged from the coating solution discharge nozzle on the first surface before the solvent is vaporized. The stage of forming a coating film. 2. For the method for forming a coating film according to item 1 of the application, wherein the step of diffusing the solvent is to rotate the substrate at a first speed; and the step of forming the coating film is higher than the first speed. At a second speed, the substrate is rotated. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy Before the step, there is a step of placing the solvent on the first surface; and the time for rotating the substrate at the first speed is set to a very short time compared with the time for placing the solvent. By. 4. If the coating film forming method of item 1 of the scope of the patent application is for the stage where the aforementioned solvent is discharged on the aforementioned first surface, and then diffused on the aforementioned first surface 32 This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 male shovel > A8B8C8D8 Economic Yinzhi *.% Printed by the Employees' Consumer Cooperatives of the Property Bureau. 6. Before the stage of applying for the scope of the patent, there is a stage in which the aforementioned solvent is placed on the first side. 5. For example, the application method for forming a coating film according to the first item of the patent scope, wherein the solvent diffusion stage is performed on the first surface, and the coating liquid discharge nozzle is moved to the discharge position on the substrate. 6_ 如 应用The coating film forming method according to item 1 of the patent scope, wherein the outer edge portion of the first surface of the substrate is blown with a force of nitrogen gas. 7. The coating film forming method according to item 1 of the patent scope, wherein the aforementioned The outer edge of the first surface of the substrate is heated by a heating device. 8_ The coating film forming method according to item 7 of the patent application scope, wherein the aforementioned heating device is a The temperature is set to a temperature higher than the temperature of the processing chamber by 1 to 20 ° C. 9. The method for forming a coating film according to item 1 of the patent application scope, wherein the solvent ejection nozzle and the coating liquid ejection nozzle are linked to perform the foregoing The mover on the substrate. 10. If the coating film forming method according to item 丨 of the patent application scope, after the step of forming the coating film, the method further has a rinsing liquid discharged from the rinsing liquid discharge nozzle on the outer edge of the first surface. The coating liquid discharge nozzle and the rinsing liquid discharge nozzle are arranged via a gap with a radius of approximately the substrate and form a mover that moves on the substrate in linkage. 11. A coating device, comprising: It has a turning device that rotates the substrate with the first and second sides at a variable speed; the solvent paper size applies the Chinese 0 standard (CNS > A4 specification (210 * 297mm *) ---- --------- Installation -------- Order --------- Line (Please read the precautions on the back before filling this page) 33 A8B8C8D8 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives 2 '440923 Sixth, the scope of the patent application is to discharge the solvent ejection nozzle on the first surface; supply the solvent to the solvent supply portion of the solvent ejection nozzle; to eject the coating liquid on the first surface; A coating liquid supply unit from the coating liquid to the coating liquid discharge nozzle; a nozzle cantilever that holds the solvent discharge nozzle and moves the coating liquid discharge nozzle; and controls the rotary device, the nozzle cantilever, the solvent supply unit, and the coating liquid A control device of the supply unit; and the aforementioned control device controls the cantilever of the nozzle so that the solvent discharge nozzle position is on the i-th surface discharge position; controls the solvent supply unit and the solvent is also discharged from the nozzle to make the solvent The agent is discharged on the first surface; the rotation device is controlled to rotate the substrate to diffuse the solvent; the nozzle cantilever is controlled to position the coating liquid discharge nozzle at the discharge position on the first surface to control the coating The liquid supply unit and the coating liquid discharge nozzle The coating liquid is discharged on the first surface; before the solvent is vaporized, the rotating device is controlled to rotate the substrate and diffuse the coating liquid. The diffusion of the solvent is performed by rotating the substrate at a first speed, and the diffusion of the coating solution is performed by rotating the substrate at a second speed higher than the first speed. 13. For the coating device according to item 11 of the scope of patent application, the aforementioned control device 'controls the aforementioned rotary device and discharges the solvent from the nozzle to the aforementioned discharge position on the first surface. Paper size applies to China National Standard (CNS) A4 (21〇χ 297 公 ®) 彳! ----- Order --------- Line · r ------- (锖 Please read the precautions on the back before filling in this page) 34 A8B8C8D8 VI. The scope of patent application makes the aforementioned substrate rotate Stopper. 14. For the coating device according to item u of the patent application scope, the aforementioned control device controls the turning device, and discharges the solvent to the nozzle so that it is positioned at the aforementioned discharge position on the first surface, so that the aforementioned The substrate is rotated at a first speed and the solvent is diffused. 15. As for the coating device in the scope of application for item u, the coating device further includes a nitrogen gas supply unit that blows nitrogen gas into the outer edge portion of the first surface. 16. If the coating device of item n of the scope of patent application has a heating device for heating the outer edge of the aforementioned surface]. 17. For example, the coating device of the patent application No. 16 has a processing chamber for storing the aforementioned substrate; and the aforementioned heating device is set to be 1 to 2 higher than the temperature of the aforementioned processing chamber. (: The temperature person) 18. If the coating device of item u of the patent application range has a rinsing liquid nozzle for supplying rinsing liquid to the outer edge of the substrate, and between the solvent ejection nozzle and the rinsing liquid nozzle, The gap of approximately a radius of the substrate is maintained, and the holder held by the aforementioned nozzle cantilever is used.! 1111 (Please read the precautions on the back before filling out this page > --Line-Printed by the Economic and Intellectual Property Bureau Staff Consumer Cooperative Standards are applicable to China National Standard (CNS) A4 specifications (21 × 297 g) 35