TW200943390A - Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate - Google Patents
Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrateInfo
- Publication number
- TW200943390A TW200943390A TW097144553A TW97144553A TW200943390A TW 200943390 A TW200943390 A TW 200943390A TW 097144553 A TW097144553 A TW 097144553A TW 97144553 A TW97144553 A TW 97144553A TW 200943390 A TW200943390 A TW 200943390A
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- group iii
- iii nitride
- semiconductor crystal
- crystal substrate
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 150000004767 nitrides Chemical class 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 2
- 239000005049 silicon tetrachloride Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007300461A JP2009126723A (ja) | 2007-11-20 | 2007-11-20 | Iii族窒化物半導体結晶の成長方法、iii族窒化物半導体結晶基板の製造方法およびiii族窒化物半導体結晶基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200943390A true TW200943390A (en) | 2009-10-16 |
Family
ID=40325823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097144553A TW200943390A (en) | 2007-11-20 | 2008-11-18 | Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090127664A1 (zh) |
EP (1) | EP2063458A2 (zh) |
JP (1) | JP2009126723A (zh) |
KR (1) | KR20090052292A (zh) |
CN (1) | CN101440520A (zh) |
RU (1) | RU2008145801A (zh) |
TW (1) | TW200943390A (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5018423B2 (ja) | 2007-11-20 | 2012-09-05 | 住友電気工業株式会社 | Iii族窒化物半導体結晶基板および半導体デバイス |
JP5045388B2 (ja) * | 2007-11-20 | 2012-10-10 | 住友電気工業株式会社 | Iii族窒化物半導体結晶の成長方法およびiii族窒化物半導体結晶基板の製造方法 |
US8598685B2 (en) * | 2009-09-04 | 2013-12-03 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof |
JP5631889B2 (ja) * | 2009-11-10 | 2014-11-26 | 株式会社トクヤマ | 積層体の製造方法 |
JP2011199187A (ja) * | 2010-03-23 | 2011-10-06 | Hitachi Cable Ltd | 窒化ガリウム系半導体ダイオード |
US20110263111A1 (en) * | 2010-04-21 | 2011-10-27 | Yuriy Melnik | Group iii-nitride n-type doping |
JP2012012292A (ja) * | 2010-05-31 | 2012-01-19 | Mitsubishi Chemicals Corp | Iii族窒化物結晶の製造方法、および該製造方法により得られるiii族窒化物結晶、iii族窒化物結晶基板 |
JP5808208B2 (ja) * | 2011-09-15 | 2015-11-10 | 株式会社サイオクス | 窒化物半導体基板の製造方法 |
JP6036155B2 (ja) * | 2011-10-21 | 2016-11-30 | 三菱化学株式会社 | GaN結晶 |
WO2013058350A1 (ja) | 2011-10-21 | 2013-04-25 | 三菱化学株式会社 | 周期表第13族金属窒化物半導体結晶の製造方法、及び該製造方法により製造される周期表第13族金属窒化物半導体結晶 |
JP6437736B2 (ja) * | 2014-05-09 | 2018-12-12 | 古河機械金属株式会社 | 自立基板の製造方法および自立基板 |
JP6743709B2 (ja) | 2015-02-06 | 2020-08-19 | 三菱ケミカル株式会社 | GaN単結晶およびGaN単結晶製造方法 |
JP6578570B2 (ja) * | 2015-03-03 | 2019-09-25 | 国立大学法人大阪大学 | Iii族窒化物半導体結晶基板の製造方法 |
JP6376600B2 (ja) | 2015-03-20 | 2018-08-22 | 株式会社タムラ製作所 | 結晶積層構造体の製造方法 |
WO2018030311A1 (ja) | 2016-08-08 | 2018-02-15 | 三菱ケミカル株式会社 | 導電性C面GaN基板 |
JP6356315B1 (ja) | 2017-05-29 | 2018-07-11 | 株式会社サイオクス | 窒化物結晶基板、半導体積層物、半導体積層物の製造方法および半導体装置の製造方法 |
JP6824829B2 (ja) * | 2017-06-15 | 2021-02-03 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法 |
US10822722B2 (en) * | 2017-07-04 | 2020-11-03 | Sumitomo Electric Industries, Ltd. | Gallium arsenide crystal body and gallium arsenide crystal substrate |
CN116288724A (zh) | 2018-08-17 | 2023-06-23 | 三菱化学株式会社 | n型GaN结晶、GaN晶片以及GaN结晶、GaN晶片和氮化物半导体器件的制造方法 |
RU2705516C1 (ru) * | 2019-03-12 | 2019-11-07 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводниковой структуры |
JP7101736B2 (ja) * | 2020-10-21 | 2022-07-15 | 株式会社サイオクス | GaN単結晶基板および半導体積層物 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
JP3279528B2 (ja) | 1998-09-07 | 2002-04-30 | 日本電気株式会社 | 窒化物系iii−v族化合物半導体の製造方法 |
JP4734786B2 (ja) * | 2001-07-04 | 2011-07-27 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体基板、及びその製造方法 |
JP3801125B2 (ja) * | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法 |
US7494904B2 (en) * | 2002-05-08 | 2009-02-24 | Btu International, Inc. | Plasma-assisted doping |
US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
JP2006193348A (ja) * | 2005-01-11 | 2006-07-27 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体基板およびその製造方法 |
JP5656401B2 (ja) * | 2006-05-08 | 2015-01-21 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングFreiberger Compound Materials Gmbh | Iii−nバルク結晶及び自立型iii−n基板の製造方法、並びにiii−nバルク結晶及び自立型iii−n基板 |
JP4899911B2 (ja) * | 2007-02-16 | 2012-03-21 | 日立電線株式会社 | Iii族窒化物半導体基板 |
US7655931B2 (en) * | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
-
2007
- 2007-11-20 JP JP2007300461A patent/JP2009126723A/ja not_active Withdrawn
-
2008
- 2008-11-18 US US12/273,179 patent/US20090127664A1/en not_active Abandoned
- 2008-11-18 TW TW097144553A patent/TW200943390A/zh unknown
- 2008-11-19 EP EP08020195A patent/EP2063458A2/en not_active Withdrawn
- 2008-11-19 KR KR1020080115335A patent/KR20090052292A/ko not_active Application Discontinuation
- 2008-11-19 RU RU2008145801/15A patent/RU2008145801A/ru not_active Application Discontinuation
- 2008-11-20 CN CNA2008101777731A patent/CN101440520A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101440520A (zh) | 2009-05-27 |
JP2009126723A (ja) | 2009-06-11 |
EP2063458A2 (en) | 2009-05-27 |
US20090127664A1 (en) | 2009-05-21 |
RU2008145801A (ru) | 2010-05-27 |
KR20090052292A (ko) | 2009-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200943390A (en) | Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate | |
TW200940756A (en) | Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate | |
TWI692545B (zh) | 形成高p型摻雜鍺錫膜的方法以及包含該等膜的結構和裝置 | |
WO2006037844A3 (en) | Cvd doped structures | |
WO2012002995A3 (en) | Thin films and methods of making them using cyclohexasilane | |
CN103228827B (zh) | 外延碳化硅单晶基板的制造方法 | |
WO2009066464A1 (ja) | 窒化物半導体および窒化物半導体の結晶成長方法 | |
TW200632153A (en) | Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal | |
US20060071213A1 (en) | Low temperature selective epitaxial growth of silicon germanium layers | |
WO2005013326A3 (en) | Epitaxial growth of relaxed silicon germanium layers | |
WO2006060339A3 (en) | Selective epitaxy process with alternating gas supply | |
TW200603267A (en) | Method for making compound semiconductor and method for making semiconductor device | |
TW200605404A (en) | Group III nitride crystal and its manufacturing method, group III nitride crystal substrate, and semiconductor device | |
KR20190102210A (ko) | 기저면 전위가 탄화규소 에피택셜층에 미치는 영향을 줄이는 방법 | |
WO2013061047A3 (en) | Silicon carbide epitaxy | |
CN104900773A (zh) | 一种氮化物发光二极管结构及其制备方法 | |
PL2122015T3 (pl) | Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża | |
SG142208A1 (en) | Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon | |
TW200512958A (en) | AlGaInN based optical device and fabrication method thereof | |
US9263263B2 (en) | Method for selective growth of highly doped group IV—Sn semiconductor materials | |
US8802546B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
JP6005361B2 (ja) | 半導体材料の選択堆積方法 | |
CN102465334A (zh) | 一种氮化镓基led外延层的生长方法 | |
EP4177931A3 (en) | Vapor phase growth method and vapor phase growth apparatus | |
RU2009105134A (ru) | Способ изготовления кристалла нитрида iii группы |