CN104900773A - 一种氮化物发光二极管结构及其制备方法 - Google Patents

一种氮化物发光二极管结构及其制备方法 Download PDF

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CN104900773A
CN104900773A CN201510174719.1A CN201510174719A CN104900773A CN 104900773 A CN104900773 A CN 104900773A CN 201510174719 A CN201510174719 A CN 201510174719A CN 104900773 A CN104900773 A CN 104900773A
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谢祥彬
宋长伟
张家宏
林兓兓
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Anhui Sanan Optoelectronics Co Ltd
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Abstract

本发明提出一种氮化物发光二极管结构及其制备方法，包括：提供一玻璃衬底；在所述玻璃衬底上层叠缓冲层结构，所述缓冲层结构为SiAlN层和AlGaN层循环组成，所述循环数目为1~5；然后再依次生长非掺杂的氮化镓层、N型层、量子阱结构层和P型层。本发明采用价格低廉、工艺成熟的玻璃为衬底，并在其上生长SiAlN与AlGaN缓冲层，改善衬底与外延层之间的晶格失配常数，进而提高发光二极管的光电性能。

Description

一种氮化物发光二极管结构及其制备方法
技术领域
本发明涉及一种氮化物发光二极管结构及其制备方法。
背景技术
发光二极管（英文为Light Emitting Diode，简称LED）是一种固态半导体二极管发光器件，被广泛用于指示灯、显示屏等照明领域。
现阶段制备LED晶圆片的方法主要是通过金属有机化合物化学气相沉淀（Metal-organic Chemical Vapor Deposition，简称MOCVD）实现，其流程简述如下：将衬底（目前量产的主要为蓝宝石衬底/Si衬底/SiC衬底）放入石墨承载盘（Wafer carrier）的凹槽上，将其与石墨承载盘一起传入MOCVD反应室内，通过将反应室温度加热到设定好的温度，并配合通入有机金属化合物和五族气体，使它们在衬底上断开化学键并重新聚合形成LED外延层。
在LED发光二极管外延晶圆制程中，高质量的GaN材料一般都是通过异质外延方法制作。由于不同的衬底会直接影响所生长外延层的晶格质量，所以对衬底的选择显得非常重要。一般选择衬底需要遵循以下几个原则，如晶格常数匹配、热膨胀系数匹配、价格适宜等原则；另外不同衬底的选择会造成从外延到后续LED芯片制程的工艺有差别。
蓝宝石衬底、Si衬底、SiC衬底是目前可以实现大规模工业化量产的衬底。但这几种衬底都存在着价格偏高且较难实现大面积生产的先天性问题，虽然人们对外延生长及后续LED器件制程做了大量优化用于节省制造成本，但LED器件成本下降速度偏慢的问题，这大大制约了LED器件的市场普及率，因此有必要寻找一种成熟的低成本衬底及配合该衬底生长所需的外延底层结构的设计。
发明内容
针对上述问题，本发明提供一种氮化物发光二极管结构，包括：非掺杂氮化镓层、N型层、量子阱层和P型层，其特征在于：所述氮化物发光二极管结构还包括玻璃衬底及沉积于所述玻璃衬底上的由SiAlN层和AlGaN层组成的缓冲层结构。
优选的，所述玻璃衬底为图形化衬底或非图形化衬底。
优选的，所述缓冲层结构中SiAlN层和AlGaN层为依次层叠的循环结构，所述循环数目为1~5。
优选的，所述SiAlN层的厚度为15~300埃。
优选的，所述AlGaN层的厚度为15~300埃。
在其一实施例中，本发明涉及的一种氮化物发光二极管结构的制备方法，包含如下步骤：
提供一玻璃衬底；
在所述玻璃衬底上层叠缓冲层结构，所述缓冲层结构为SiAlN层和AlGaN层循环组成，所述循环数目为1~5；
然后再依次生长非掺杂的氮化镓层、N型层、量子阱结构层、P型层；
优选的，所述玻璃衬底为图形化衬底或者非图形化衬底。
优选的，所述SiAlN层的生长温度为500~1000℃，压力为100torr～500torr。
优选的，所述AlGaN层的生长温度为500~800℃，压力为100torr～500torr。
优选的，所述SiAlN层利用金属有机化学气相沉积（MOCVD）法、物理气相沉积（PVD）法或化学气相沉积（CVD）形成。
优选的，所述AlGaN层利用金属有机化学气相沉积（MOCVD）法、物理气相沉积（PVD）法或化学气相沉积（CVD）法制备形成。
本发明至少具以下有益效果：（1）玻璃衬底价格低廉、工艺成熟，且可制成较大面积的成品，降低了氮化镓系发光二极管的制备成本；（2）玻璃衬底比较容易解离，这使得后续的芯片处理更容易，成本更低；（3）于玻璃衬底上先生长一SiAlN层用于缓解衬底与氮化铝晶体之间的晶格失配，后再生长一AlGaN层来缓解SiAlN层与氮化镓外延层之间的晶格失配，减少发光二极管的晶格缺陷，提高光电性能。
附图说明
附图是用来对本发明的进一步理解，并且构成说明书的一部分，与本发明实施例一起用于解释本发明，并不构成对本发明的限制。
图1 为本发明实施例1之氮化物发光二极管结构示意图。
图2 为本发明实施例2之氮化物发光二极管结构示意图。
附图标注：1：玻璃衬底；2：缓冲层；21：SiAlN层；22：AlGaN层；3：非掺杂氮化镓层；4：N型GaN层；5：量子阱结构层；6：P型GaN层。
具体实施方式
下面结合附图和实施例对发明的具体实施方式进行详细说明。
实施例1
参看附图1，提供玻璃衬底1，所述玻璃衬底1为图形化衬底或者非图形化衬底，本实施例优选耐高温（1300℃以上）、图形化玻璃衬底；利用MOCVD法在玻璃衬底1表面依次外延生长厚度为15~300埃的SiAlN层21和厚度为15~300埃的AlGaN层22构成的缓冲层2、非掺杂氮化镓层3、N型GaN层4、量子阱结构层5、P型GaN层6。其中，所述N型GaN层4可选自C、Si、Ge、Sn、Pb、O、S、Se、Te、Po中的至少一种为掺杂剂；所述P型GaN层6可选自Be、Mg、Ca、Sr、Ba中的一种为掺杂剂。
本发明提供的一种氮化物发光二极管的制备方法，包括：提供一耐高温的（1300℃以上）、图形化玻璃衬底1，将所述图形化玻璃衬底1传入MOCVD反应室内。由于玻璃衬底与氮化镓材料存在较大的晶格失配和热膨胀系数差异，因此直接在玻璃衬底上生长氮化镓层时无法获得较高的晶格质量，且形成的半导体结构存在较大应力，从而导致后续器件的质量及生长良率偏低，因此本方法先于玻璃衬底1上生长SiAlN层21和AlGaN层22组成的缓冲层2。
所述缓冲层2的具体生长方法为：首先，调节反应室温度为500~1000℃，压力为100torr～500torr，生长一厚度为15~300埃的SiAlN层21，随后，保持反应室压力恒定，调节反应室温度为500~800℃，于SiAlN层21表面生长一厚度为15~300埃的AlGaN层22；由于玻璃衬底1的热膨胀系数为10×10-6m/K左右，而SiAlN层21的热膨胀系数为8.21×10-6m/K左右，AlGaN层22的热膨胀系数为5.4×10-6m/K左右，GaN的热膨胀系数为5.59×10-6m/K左右，因此，通过SiAlN层21和AlGaN层22对于热膨胀系数的依次减小，直至与GaN材料近似，有效缓解了玻璃衬底与GaN材料的热膨胀系数差异，从而直接改善后续制备的半导体原件的翘曲异常，有效提升发光二极管的质量及生产良率。
此外，由于玻璃衬底为非晶体材料，其与后续沉积的氮化镓晶体失配度较高，所以无法有效直接沉积氮化镓半导体层，而SiAlN层21因含有Si元素和Al元素，所以可任意调节Si和Al的元素含量，使该SiAlN层21的材料特性介于玻璃衬底和后续的AlGaN层22之间（SiAlN的晶格系数为7.7～3.11）；相同的，因AlGaN层22则因含有Al元素和Ga元素，任意调节Ga和Al的元素含量，使该AlGaN层22的材料特性介于SiAlN层21和GaN层3之间（AlGaN的晶格系数为3.11～3.189），因此利用SiAlN层21和AlGaN层22逐渐减小玻璃衬底与氮化镓半导体层之间的材料特性差异，减小最终形成的半导体元件的晶体缺陷，进一步提升发光元件的质量及良率。
随后，升高反应室压力至150torr～300torr，生长温度至900~1200℃，生长非掺杂氮化镓层3及掺杂硅（Si）的N型GaN层4；保持反应室压力恒定，降低反应室温度至650~850℃生长量子阱结构层5；保持反应室压力恒定，升高反应室温度至900~1050℃生长Mg掺杂的P型GaN层6。
实施例2
参看附图2，本实施例与实施例1的区别在于：缓冲层2为由SiAlN层21和AlGaN层22组成的循环结构，其循环数目为3，生长本实施例中的氮化物发光二极管的具体方法如下：
（1）提供一耐高温的、图形化玻璃衬底；
（2）于衬底表面形成SiAlN层21；
（3）于SiAlN层21上继续生长AlGaN层22。
（4）再重复步骤（2）和（3）两次。
（5）在步骤（4）结束后的晶圆表面继续生长非掺杂氮化镓层3、N型GaN层4、量子阱结构层5、P型GaN层6。
其中，由于缓冲层结构2中SiAlN层21和AlGaN层22的材料特性依次接近于后续氮化镓半导体层，且循环层叠后其缓冲应力的性能增强，进一步减小玻璃衬底与后续氮化镓半导体层之间的材料性能差异，减小该性能差异造成的缺陷，且同时更有效地缓冲玻璃衬底与氮化镓半导体层之间的应力，从而最终提升发光二极管的晶体质量和电性能。
应当理解的是，上述具体方案为本发明的优选实施例，本发明范围不限于该例，凡依本发明所做的任何变更，皆属于本发明的保护范围之内。

Claims (10)

1.一种氮化物发光二极管结构，包括：非掺杂氮化镓层、N型层、量子阱层和P型层，其特征在于：所述氮化物发光二极管结构包括玻璃衬底及沉积于所述玻璃衬底上的由SiAlN层和AlGaN层组成的缓冲层结构。
2.根据权利要求1所述的一种氮化物发光二极管结构，其特征在于：所述玻璃衬底为图形化衬底或非图形化衬底。
3.根据权利要求1所述的一种氮化物发光二极管结构，其特征在于：所述缓冲层结构中SiAlN层和AlGaN层为依次层叠的循环结构，所述循环数目为1~5。
4.根据权利要求1所述的一种氮化物发光二极管结构，其特征在于：所述SiAlN层的厚度为15~300埃。
5.根据权利要求1所述的一种氮化物发光二极管结构，其特征在于：所述AlGaN层的厚度为15~300埃。
6.一种氮化物发光二极管结构的制备方法，其特征在于，包含如下步骤：
提供一玻璃衬底；
在所述玻璃衬底上层叠缓冲层结构，所述缓冲层结构为SiAlN层和AlGaN层循环组成，所述循环数目为1~5；
然后再依次生长非掺杂的氮化镓层、N型层、量子阱结构层和P型层。
7.根据权利要求6所述的一种氮化物发光二极管结构的制备方法，其特征在于：所述SiAlN层的生长温度为500~1000℃，压力为100torr~500torr。
8.根据权利要求6所述的一种氮化物发光二极管结构的制备方法，其特征在于：所述AlGaN层的生长温度为500~1000℃，压力为100torr~500torr。
9.根据权利要求6所述的一种氮化物发光二极管结构的制备方法，其特征在于：所述SiAlN层利用金属有机化学气相沉积（MOCVD）法、物理气相沉积（PVD）法或化学气相沉积（CVD）法制备形成。
10.根据权利要求6所述的一种氮化物发光二极管结构的制备方法，其特征在于：所述AlGaN层利用金属有机化学气相沉积（MOCVD）法、物理气相沉积（PVD）法或化学气相沉积（CVD）法制备形成。
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