TW200833632A - Oxide sintering body, method for producing the same, transparency conductive film and solar battery obtained by using it - Google Patents

Oxide sintering body, method for producing the same, transparency conductive film and solar battery obtained by using it

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Publication number
TW200833632A
TW200833632A TW096137005A TW96137005A TW200833632A TW 200833632 A TW200833632 A TW 200833632A TW 096137005 A TW096137005 A TW 096137005A TW 96137005 A TW96137005 A TW 96137005A TW 200833632 A TW200833632 A TW 200833632A
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TW
Taiwan
Prior art keywords
oxide
sintering body
aluminum
gallium
oxide sintering
Prior art date
Application number
TW096137005A
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English (en)
Other versions
TWI389869B (zh
Inventor
Yoshiyuki Abe
Tokuyuki Nakayama
Original Assignee
Sumitomo Metal Mining Co
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Filing date
Publication date
Application filed by Sumitomo Metal Mining Co filed Critical Sumitomo Metal Mining Co
Publication of TW200833632A publication Critical patent/TW200833632A/zh
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Publication of TWI389869B publication Critical patent/TWI389869B/zh

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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/6261—Milling
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    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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TW096137005A 2006-10-06 2007-10-03 氧化物燒結體、其製法、透明導電膜及使用它得到之太陽電池 TWI389869B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006275313 2006-10-06
JP2007233826A JP4231967B2 (ja) 2006-10-06 2007-09-10 酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池

Publications (2)

Publication Number Publication Date
TW200833632A true TW200833632A (en) 2008-08-16
TWI389869B TWI389869B (zh) 2013-03-21

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JP (1) JP4231967B2 (zh)
KR (1) KR101136953B1 (zh)
CN (1) CN101164966B (zh)
DE (1) DE102007047146A1 (zh)
TW (1) TWI389869B (zh)

Cited By (4)

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TWI395336B (zh) * 2009-06-09 2013-05-01 Nat Univ Chung Hsing Optoelectronic semiconductors, conductors, insulators and their design methods with multiple high entropy alloy oxides
TWI403463B (zh) * 2009-11-18 2013-08-01 Idemitsu Kosan Co In-Ga-Zn-O sputtering target
TWI403602B (zh) * 2009-11-19 2013-08-01 Idemitsu Kosan Co In-Ga-Zn-based oxide sputtering target
TWI413271B (zh) * 2009-04-17 2013-10-21 Lg Display Co Ltd 太陽能電池之製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5003600B2 (ja) * 2008-06-13 2012-08-15 住友金属鉱山株式会社 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜、導電性積層体
JP5093503B2 (ja) * 2008-07-28 2012-12-12 住友金属鉱山株式会社 薄膜太陽電池及び薄膜太陽電池用表面電極
JP5056651B2 (ja) * 2008-07-28 2012-10-24 住友金属鉱山株式会社 薄膜太陽電池及び薄膜太陽電池用表面電極
JP5093502B2 (ja) * 2008-07-28 2012-12-12 住友金属鉱山株式会社 薄膜太陽電池及び薄膜太陽電池用表面電極
JP5727130B2 (ja) * 2008-08-18 2015-06-03 東ソー株式会社 複合酸化物焼結体及びその用途
CN102165559B (zh) 2008-09-30 2013-09-04 Lg化学株式会社 透明导电层和包括该透明导电层的透明电极
CN102348827B (zh) * 2009-03-13 2015-04-29 住友金属矿山株式会社 透明导电膜和透明导电膜层叠体及其制造方法、以及硅系薄膜太阳能电池
JP5418105B2 (ja) * 2009-09-18 2014-02-19 東ソー株式会社 複合酸化物焼結体、酸化物透明導電膜、及びその製造方法
JP5333144B2 (ja) * 2009-10-14 2013-11-06 住友金属鉱山株式会社 薄膜製造用焼結体ターゲットとその製造方法
EP2361887A1 (en) * 2010-02-25 2011-08-31 Corning Incorporated A process for manufacturing a doped or non-doped zno material and said material
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