TW200833425A - Two-fluid nozzle, substrate processing apparatus, and substrate processing method - Google Patents

Two-fluid nozzle, substrate processing apparatus, and substrate processing method

Info

Publication number
TW200833425A
TW200833425A TW096146983A TW96146983A TW200833425A TW 200833425 A TW200833425 A TW 200833425A TW 096146983 A TW096146983 A TW 096146983A TW 96146983 A TW96146983 A TW 96146983A TW 200833425 A TW200833425 A TW 200833425A
Authority
TW
Taiwan
Prior art keywords
processing liquid
cylindrical member
substrate processing
droplets
gas
Prior art date
Application number
TW096146983A
Other languages
English (en)
Inventor
Masahiro Miyagi
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200833425A publication Critical patent/TW200833425A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
    • B05B7/0433—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of gas surrounded by an external conduit of liquid upstream the mixing chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/03—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/053—Arrangements for supplying power, e.g. charging power
    • B05B5/0533—Electrodes specially adapted therefor; Arrangements of electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/06—Spray pistols; Apparatus for discharge with at least one outlet orifice surrounding another approximately in the same plane
    • B05B7/062—Spray pistols; Apparatus for discharge with at least one outlet orifice surrounding another approximately in the same plane with only one liquid outlet and at least one gas outlet
    • B05B7/066—Spray pistols; Apparatus for discharge with at least one outlet orifice surrounding another approximately in the same plane with only one liquid outlet and at least one gas outlet with an inner liquid outlet surrounded by at least one annular gas outlet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
TW096146983A 2006-12-15 2007-12-10 Two-fluid nozzle, substrate processing apparatus, and substrate processing method TW200833425A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006337765A JP2008153322A (ja) 2006-12-15 2006-12-15 二流体ノズル、基板処理装置および基板処理方法

Publications (1)

Publication Number Publication Date
TW200833425A true TW200833425A (en) 2008-08-16

Family

ID=39567095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096146983A TW200833425A (en) 2006-12-15 2007-12-10 Two-fluid nozzle, substrate processing apparatus, and substrate processing method

Country Status (5)

Country Link
US (1) US20080173327A1 (zh)
JP (1) JP2008153322A (zh)
KR (1) KR100904350B1 (zh)
CN (1) CN100593839C (zh)
TW (1) TW200833425A (zh)

Cited By (5)

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CN102592965A (zh) * 2011-01-10 2012-07-18 联华电子股份有限公司 半导体工艺中的清洗方法
TWI462148B (zh) * 2013-07-10 2014-11-21 Fluid nozzle and fluid nozzle device
TWI479550B (zh) * 2009-10-16 2015-04-01 Tokyo Electron Ltd 基板液體處理裝置及基板液體處理方法與記錄有基板液體處理程式之電腦可讀取的記錄媒體
TWI593472B (zh) * 2015-01-27 2017-08-01 陳柏頴 可尖端釋放負電荷之清潔裝置
US10991602B2 (en) 2016-05-09 2021-04-27 Ebara Corporation Substrate washing device

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CN101602032B (zh) * 2009-07-09 2012-08-08 湖州银轴输送机械制造有限公司 雾化喷嘴
WO2011033864A1 (ja) * 2009-09-17 2011-03-24 シャープ株式会社 塗布装置および塗布方法
FR2950545B1 (fr) * 2009-09-29 2012-11-30 Centre Nat Rech Scient Dispositif et procede de projection electrostatique d'un liquide, injecteur de carburant incorporant ce dispositif et utilisations de ce dernier
CN101850343A (zh) * 2010-06-10 2010-10-06 中国电子科技集团公司第四十五研究所 晶片双流体清洗装置
KR101310031B1 (ko) * 2010-12-28 2013-09-24 주식회사 포스코 에어로졸 공급장치
JP2012160709A (ja) * 2011-01-13 2012-08-23 Univ Of Yamanashi 太陽電池用の薄膜形成装置及び薄膜形成方法
CN102161022A (zh) * 2011-03-29 2011-08-24 浙江明泉工业涂装有限公司 一种铝型材立式自动化涂装生产线
EP2520509B1 (en) * 2011-05-06 2017-10-04 Airbus Defence and Space GmbH Apparatus for dispensing liquid droplets into a gas flow
JP5866227B2 (ja) * 2012-02-23 2016-02-17 株式会社荏原製作所 基板洗浄方法
JP5894021B2 (ja) * 2012-06-26 2016-03-23 旭サナック株式会社 噴霧液滴の電荷量測定方法、電荷量測定装置及びそれらを用いた噴霧液滴の電荷量制御装置
JP2014192499A (ja) * 2013-03-28 2014-10-06 Toppan Printing Co Ltd 洗浄装置及び洗浄方法
CN104069968B (zh) * 2013-03-28 2017-01-04 株式会社Enjet 喷雾嘴和使用该喷雾嘴的涂敷系统
FR3006209B1 (fr) * 2013-05-31 2016-05-06 Michel Bourdat Dispositif et procede de nettoyage d'objets en forme de plaque
US10994311B2 (en) 2013-05-31 2021-05-04 Michel Bourdat Specific device for cleaning electronic components and/or circuits
US9951646B2 (en) * 2013-07-01 2018-04-24 General Electric Company Gas turbine on-line water wash system and method
CN104415930B (zh) * 2013-09-03 2016-06-29 亿力鑫系统科技股份有限公司 应用清洗基板方法的流体喷头及流体喷头装置
DK3046676T3 (en) * 2013-09-20 2018-10-08 Spraying Systems Co ELECTROSTATIC SPRAY NOZZLE DEVICE
US20150107619A1 (en) * 2013-10-22 2015-04-23 Taiwan Semiconductor Manufacturing Company Limited Wafer particle removal
SG10201407598VA (en) 2013-11-19 2015-06-29 Ebara Corp Substrate cleaning apparatus and substrate processing apparatus
JP6483348B2 (ja) * 2014-03-28 2019-03-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6600470B2 (ja) 2014-04-01 2019-10-30 株式会社荏原製作所 洗浄装置及び洗浄方法
KR101505167B1 (ko) * 2014-07-03 2015-03-23 (주)다솔이엔지 글라스 세척노즐장치
JP6797526B2 (ja) * 2014-11-11 2020-12-09 株式会社荏原製作所 基板洗浄装置
CN104607420B (zh) * 2015-01-15 2016-08-17 山东大学 小尺寸kdp晶体表面磁-射流清洗装置及清洗工艺
JP6112130B2 (ja) * 2015-03-25 2017-04-12 トヨタ自動車株式会社 静電ノズル、吐出装置及び半導体モジュールの製造方法
JP6496171B2 (ja) * 2015-03-30 2019-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102432858B1 (ko) * 2015-09-01 2022-08-16 삼성전자주식회사 약액 공급 장치 및 이를 구비하는 반도체 처리 장치
JP6715019B2 (ja) * 2016-02-09 2020-07-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6612176B2 (ja) * 2016-05-09 2019-11-27 株式会社荏原製作所 基板洗浄装置
JP2017204495A (ja) * 2016-05-09 2017-11-16 株式会社荏原製作所 基板洗浄装置
WO2018039394A1 (en) * 2016-08-25 2018-03-01 Corning Incorporated Method and apparatus for cleaning a glass substrate
JP6764288B2 (ja) * 2016-09-12 2020-09-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102604406B1 (ko) * 2017-01-11 2023-11-22 주식회사 케이씨텍 노즐 유닛 및 이를 구비한 기판 처리 장치
KR102465540B1 (ko) * 2017-05-18 2022-11-11 삼성전자주식회사 약액 공급 장치 및 이를 구비하는 반도체 처리 장치
CN107684986A (zh) * 2017-08-10 2018-02-13 深圳市华星光电技术有限公司 一种新型双流体喷嘴装置
KR20190019229A (ko) * 2017-08-16 2019-02-27 세메스 주식회사 세정액 공급 유닛, 이를 포함하는 기판 처리 장치 및 세정액 공급 방법
US11056358B2 (en) * 2017-11-14 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer cleaning apparatus and method
JP7034743B2 (ja) * 2018-01-29 2022-03-14 東京エレクトロン株式会社 基板処理装置
KR102404528B1 (ko) * 2019-09-02 2022-06-02 세메스 주식회사 노즐, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
JP2021048336A (ja) * 2019-09-20 2021-03-25 三菱電機株式会社 処理液生成方法、処理液生成機構、半導体製造装置及び半導体製造方法
WO2021132351A1 (ja) * 2019-12-23 2021-07-01 川崎重工業株式会社 塗装液混合装置及び塗装液の混合方法
WO2021157142A1 (ja) * 2020-02-03 2021-08-12 国立研究開発法人産業技術総合研究所 スプレーイオン化装置
CN111521665B (zh) * 2020-04-09 2021-12-21 电子科技大学 一种调控液滴带电量和带电性质的方法
JP7475945B2 (ja) * 2020-04-20 2024-04-30 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR102584515B1 (ko) * 2020-07-06 2023-10-05 세메스 주식회사 노즐, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
KR102279100B1 (ko) * 2021-01-27 2021-07-19 홍광락 집합건물용 oh 라디칼수 공급장치
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KR102500430B1 (ko) * 2021-03-23 2023-02-16 주식회사 프로텍 튜브형 외부 전극을 구비하는 전기수력학적 펌프 헤드 조립체
CN115475794A (zh) * 2022-10-10 2022-12-16 安徽光智科技有限公司 镜头的清洗方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196171A (en) * 1991-03-11 1993-03-23 In-Vironmental Integrity, Inc. Electrostatic vapor/aerosol/air ion generator
US5409162A (en) * 1993-08-09 1995-04-25 Sickles; James E. Induction spray charging apparatus
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
US20060118132A1 (en) * 2004-12-06 2006-06-08 Bergman Eric J Cleaning with electrically charged aerosols
JPH11345797A (ja) * 1998-06-02 1999-12-14 Shimada Phys & Chem Ind Co Ltd ２流体噴出ノズル及びこれを使用した２流体噴流洗浄装置並びに２流体噴流洗浄方法
KR100455718B1 (ko) * 2000-01-28 2004-11-08 안강호 분무입자의 유도가 가능한 전기수력학적 분사장치
DE10250406B4 (de) * 2001-10-30 2007-10-25 Hitachi, Ltd. Reaktionsvorrichtung und Mischsystem
JP4349606B2 (ja) * 2002-03-25 2009-10-21 大日本スクリーン製造株式会社 基板洗浄方法
JP4158515B2 (ja) 2002-12-24 2008-10-01 三菱化学株式会社 洗浄用２流体ノズル及び洗浄方法
JP3748559B2 (ja) * 2003-06-30 2006-02-22 キヤノン株式会社 ステージ装置、露光装置、荷電ビーム描画装置、デバイス製造方法、基板電位測定方法及び静電チャック
US7080897B2 (en) * 2003-10-31 2006-07-25 Hewlett-Packard Development Company, L.P. System for delivering material onto a substrate
JP2005183791A (ja) * 2003-12-22 2005-07-07 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
TWI251857B (en) * 2004-03-09 2006-03-21 Tokyo Electron Ltd Two-fluid nozzle for cleaning substrate and substrate cleaning device
JP4464850B2 (ja) 2004-03-09 2010-05-19 株式会社ルネサステクノロジ 基板洗浄用２流体ノズル及び基板洗浄装置
TW200703482A (en) * 2005-03-31 2007-01-16 Toshiba Kk Method and apparatus for cleaning electronic device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479550B (zh) * 2009-10-16 2015-04-01 Tokyo Electron Ltd 基板液體處理裝置及基板液體處理方法與記錄有基板液體處理程式之電腦可讀取的記錄媒體
CN102592965A (zh) * 2011-01-10 2012-07-18 联华电子股份有限公司 半导体工艺中的清洗方法
TWI462148B (zh) * 2013-07-10 2014-11-21 Fluid nozzle and fluid nozzle device
TWI593472B (zh) * 2015-01-27 2017-08-01 陳柏頴 可尖端釋放負電荷之清潔裝置
US10991602B2 (en) 2016-05-09 2021-04-27 Ebara Corporation Substrate washing device
TWI772294B (zh) * 2016-05-09 2022-08-01 日商荏原製作所股份有限公司 基板清洗裝置

Also Published As

Publication number Publication date
CN101207015A (zh) 2008-06-25
KR100904350B1 (ko) 2009-06-23
JP2008153322A (ja) 2008-07-03
CN100593839C (zh) 2010-03-10
US20080173327A1 (en) 2008-07-24
KR20080055630A (ko) 2008-06-19

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