TW200821402A - System and method including a particle trap/filter for recirculating a dilution gas - Google Patents

System and method including a particle trap/filter for recirculating a dilution gas Download PDF

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Publication number
TW200821402A
TW200821402A TW096135769A TW96135769A TW200821402A TW 200821402 A TW200821402 A TW 200821402A TW 096135769 A TW096135769 A TW 096135769A TW 96135769 A TW96135769 A TW 96135769A TW 200821402 A TW200821402 A TW 200821402A
Authority
TW
Taiwan
Prior art keywords
chamber
gas
coupled
process gas
filter
Prior art date
Application number
TW096135769A
Other languages
English (en)
Chinese (zh)
Inventor
John M White
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/565,400 external-priority patent/US20080072929A1/en
Priority claimed from US11/846,359 external-priority patent/US20080072822A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200821402A publication Critical patent/TW200821402A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Vapour Deposition (AREA)
  • Filtering Of Dispersed Particles In Gases (AREA)
TW096135769A 2006-09-22 2007-09-26 System and method including a particle trap/filter for recirculating a dilution gas TW200821402A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82671806P 2006-09-22 2006-09-22
US11/565,400 US20080072929A1 (en) 2006-09-22 2006-11-30 Dilution gas recirculation
US11/846,359 US20080072822A1 (en) 2006-09-22 2007-08-28 System and method including a particle trap/filter for recirculating a dilution gas

Publications (1)

Publication Number Publication Date
TW200821402A true TW200821402A (en) 2008-05-16

Family

ID=39201842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135769A TW200821402A (en) 2006-09-22 2007-09-26 System and method including a particle trap/filter for recirculating a dilution gas

Country Status (5)

Country Link
EP (1) EP2082077A2 (enExample)
JP (1) JP2010504436A (enExample)
KR (1) KR20090058027A (enExample)
TW (1) TW200821402A (enExample)
WO (1) WO2008036849A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI596645B (zh) * 2015-05-22 2017-08-21 台灣積體電路製造股份有限公司 電漿加工系統及在半導體製造中用於控制電漿的方法
CN111430281A (zh) * 2020-05-25 2020-07-17 中国科学院微电子研究所 一种反应腔室、反应腔室的控制方法及半导体加工设备

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101000296B1 (ko) * 2008-09-10 2010-12-13 세메스 주식회사 기액 분리 장치 및 이를 포함하는 기판 처리 장치
CN103052435A (zh) 2010-07-30 2013-04-17 吉坤日矿日石能源株式会社 排气处理系统
GB2489975A (en) * 2011-04-14 2012-10-17 Edwards Ltd Vacuum pumping system
JP5598454B2 (ja) * 2011-10-20 2014-10-01 信越半導体株式会社 有害物除去装置
KR102062317B1 (ko) * 2013-04-24 2020-01-06 삼성디스플레이 주식회사 가스 정제 장치 및 방법
JP6934379B2 (ja) * 2017-09-22 2021-09-15 大陽日酸株式会社 トラップ装置及びトラップ装置の運転方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6206970B1 (en) * 1997-09-03 2001-03-27 Micron Technology, Inc. Semiconductor wafer processor, semiconductor processor gas filtering system and semiconductor processing methods
US6206971B1 (en) * 1999-03-29 2001-03-27 Applied Materials, Inc. Integrated temperature controlled exhaust and cold trap assembly

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI596645B (zh) * 2015-05-22 2017-08-21 台灣積體電路製造股份有限公司 電漿加工系統及在半導體製造中用於控制電漿的方法
US10395918B2 (en) 2015-05-22 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for controlling plasma in semiconductor fabrication
US10867787B2 (en) 2015-05-22 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling plasma in semiconductor fabrication
CN111430281A (zh) * 2020-05-25 2020-07-17 中国科学院微电子研究所 一种反应腔室、反应腔室的控制方法及半导体加工设备

Also Published As

Publication number Publication date
WO2008036849A3 (en) 2008-06-12
JP2010504436A (ja) 2010-02-12
KR20090058027A (ko) 2009-06-08
WO2008036849A2 (en) 2008-03-27
EP2082077A2 (en) 2009-07-29

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