TW550674B - Processing apparatus and a cleaning method - Google Patents

Abstract

Provided is a parallel-plate-type processing apparatus, which performs plasma CVD and includes a chamber to be cleaned. To perform cleaning of the chamber, plasma of a gas including fluorine is generated outside the chamber, and supplied into the chamber. During the cleaning, an RF power is applied to an electrode plates inside the chamber.

Description

550674 A7 _____ B7 V. Description of the invention (彳) '1 Na Technical category The present invention relates to a processing device and a cleaning method, in which efficient cleaning can be performed. BACKGROUND ART Various CVD (chemical vapor deposition) devices have been used to manufacture electronic devices such as semiconductor devices, LCD (liquid crystal display) devices, and the like. Plasma CVD devices are widely used to produce high-quality films. The plasma CVD apparatus uses a CVD method to form a film on a semiconductor wafer contained in a step-down reaction chamber. The CVD method uses a gas phase reaction. Therefore, a film is formed not only on the surface of the wafer, but also on the surface (inner wall, etc.) of a reaction chamber member. The thus-produced film generates particles and thus reduces the yield of the product. In this case, it is necessary to periodically clean the inside of the reaction chamber to remove the film formed on the reaction chamber member. A well-known method for cleaning the inside of a reaction chamber is a field plasma cleaning method in which a cleaning gas is introduced into the reaction chamber and a plasma is generated from the gas in the reaction chamber. However, the plasma is generated in the reaction chamber, so the components of the reaction chamber may be deteriorated. A remote plasma cleaning method has been proposed. In this remote plasma cleaning method, a plasma of a cleaning gas is generated outside the reaction chamber, and the generated plasma is introduced into the reaction chamber to clean the inside of the reaction chamber. With this remote plasma cleaning method, the reaction chamber components are unlikely to deteriorate. This remote plasma cleaning method is disclosed in Unexamined Japanese Patent Application KOKAI Publication No. H9-69504 (U.S. Priority Patent Application No. 08/278605). There is a problem with the back-end electropolymer cleaning method, that is, it requires a relatively long cleaning time. -4- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 550674 A7 _ ____B7 iT, description of the invention (2 ^ "In the remote plasma cleaning method, the plasma gas is introduced into the reaction chamber from one or two points, so the interior of the reaction chamber will not be uniformly cleaned. Using the remote beam cleaning method 'requires It takes a long time to completely clean the inside of the reaction chamber, causing some of the reaction chamber components to deteriorate due to excessive cleaning. Therefore, in the conventional CVD apparatus, the reaction chamber cannot be cleaned efficiently, and the product cannot be fully obtained. High yield. Disclosure of the invention The present invention has been completed in consideration of the above. Therefore, one of the objects of the present invention is to provide a processing device and a cleaning method, thereby enabling efficient cleaning. A first feature of the invention is to provide a processing device comprising: a reaction chamber; a gas source for supplying a gas for cleaning the radon in the reaction chamber; a gas line, For introducing the gas supplied from the gas source into the reaction chamber; an activator provided in the gas pipeline and activating the gas supplied from a remote gas source; and at least three gas < 1 # inlets provided in the reaction chamber In order to achieve the above-mentioned object, according to the second feature of the present invention, a method for cleaning a processing device (the reaction chamber of the device includes two electrodes) is provided. The method includes the following steps: : Introducing a cleaning gas into the reaction chamber: and applying an RF power source to both electrodes to activate the cleaning gas. Brief Description of the Drawings Figure 1 is a diagram showing the structure of a processing device according to a first embodiment of the present invention Figure 2 is a graph showing the cleaning effect obtained by using the processing device of Figure 1. -5-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 550674 A7 B7 V. Description of the invention (3 Figure 3 is a graphic showing the cleaning effect obtained by using the processing device of Figure 1. Figure 4 is a graphic showing the structure of the processing device according to the second embodiment of the present invention Figure 5 is a cross-sectional view showing the processing device of Figure 4. Figure 6 is a graphic showing the cleaning effect obtained using the processing device of Figure 4 Figure 7 is a graphic showing the cleaning effect obtained using the processing device of Figure 4 〇 FIG. 8 is a graph showing the structure of the processing apparatus according to the third embodiment of the present invention. FIG. 9 is a graph showing the cleaning effect obtained by using the processing apparatus of FIG. 8. Comparative Example Processing Apparatus. Fig. 11 is a graph showing a cover member included in the processing apparatus according to the fourth embodiment. Fig. 12 is a graph showing the use of the processing apparatus according to the fourth embodiment. Cleaning effect. Fig. 13 is a diagram showing a modification of the cover member included in the processing device (according to the fourth embodiment). Fig. 14 is a graph showing a further cleaning effect using the processing apparatus of the fourth embodiment. FIG. 15 is a diagram showing a cover member as a comparative example. Fig. 16 is a diagram showing the structure of a processing apparatus according to a fifth embodiment of the present invention. -6-This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm). Binding

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V. Description of the invention (6 Cold Roller Chambers) 4. The temperature of the carrier 12 and the wafers on the carrier 12 are adjusted by the refrigerant. Please note that the refrigerant here refers to the temperature control medium =. 7 The carrier 12 It is connected to the first RF power source 6 through the first matching box 15. One end of the first RF power source 16 is grounded, so a 111? Voltage can be applied to the electrode support bracket carrying the 0-electrode plate 17 fixed to the top of the reaction chamber U Up. Thai pole plate 17 faces the carrier 12 'and is parallel to it. The electrode plate is formed by a guide: "e.g. the inscription. A protective ring M is provided around the electrode plate 17 below. The ring will protect the electrode plate 17 and fix it. On the electrode support frame 18. The electrode plate 17 is connected to the second rf power source η via the second matching box 20. The-terminal of the second RF power source 2i is grounded, so _RF voltage is applied to the electrode plate n. The functions of the plate 17 and the carrier 12 are respectively the upper electrode and the lower electrode of the parallel plate type plasma CM device. The upper part of the reaction chamber "is provided with a cleaning gas inlet conduit 22 and a process inlet π conduit 23. Cleaning Connected with gas human sigma conduit U to the cleaned gas bone bean head line U '俾-The cleaning gas exits through the cleaning gas population duct: into the reaction chamber. The process gas inlet duct. Connects to the process gas official line L2 '. The process gas is introduced into the reaction chamber 1 through the process gas duct U. Electrode support The rack 18 includes a diffusion portion, for example, a hollow area for diffusing the process air body. The electrode plate 17 has a plurality of holes i7a penetrating through the electrode plate 17. The cleaning gas and the process gas diffused by the diffusion plate pass through the electrode plate i7.泮 A plurality of holes 17a are conveyed to the wafer w. Port 24. The exhaust port 24 is connected to the bottom of the reaction chamber 1 1 and is provided with a circular exhaust -9-

550674 A7 B7 V. Description of the invention (7) Exhaust gas line L3. The exhaust gas line L3 is connected to a TMP (full-round molecular pump) 25 TMP 25 and a dry pump is provided downstream, so the reaction chamber 11 can be depressurized to a 眞 -state. An APC (Automatic Pressure Controller) 26 is provided between the TMP 25 and the reaction chamber 11. The APC 26 controls the reaction chamber 11 to a predetermined pressure level. The system controller 100 completely controls the processing apparatus 10, including a film generation process and a cleaning process performed in the processing apparatus 10. The film generation process and the cleaning process performed by the processing apparatus 10 constituted by the first specific embodiment will now be explained with reference to FIG. The procedures included in the above processes are explained below and are for illustrative purposes only, and the present invention is not limited to these procedures. The wafer w is loaded into the reaction chamber u and placed on the carrier 12. The electrostatic chuck holds the wafer W there. The system controller 100 opens the valve VE to supply O2, and applies an RF power to the upper electrode (electrode plate 17). Subsequently, the system controller 100 opens the valves VC, VD, and VF, supplies the reaction chamber U with SiF4, SiH4, and Ar, and applies a voltage to the lower electrode (carrier 12). Gas electricity and slurry are generated, and the Si0F film formation reaction is performed on the surface of the wafer w. The Si0F generated on the wafer W has a predetermined thickness, or after a predetermined time, the system controller 100 stops. Apply RF power to the lower electrode, close the valves VC, VD, and VF, and then stop supplying reaction i: π with SiF4, SiH4, and Ar. The electrostatic chuck is then released. The system controller 100 closes the valve ve to stop the supply 02, and stops applying RF power to the upper electrode. The crystal circle W is then carried out from the reaction chamber 11 to complete the film formation process. After the above-mentioned film generation process is performed on a predetermined number of wafers W, the system-10- this paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 public love) 550674 A7 B7 V. Description of the invention (8) Controller 100 Cleaning of the reaction chamber 11 is started. A dummy wafer W for cleaning is loaded into the reaction chamber 11 and placed on the carrier 12. The electrostatic chuck holds the dummy wafer W placed on the carrier 12. Then, the system controller 100 opens the valves VA and VB, and supplies the reaction chamber u with NF3 and Ar to supply the cleaning gas into the reaction chamber 11 at a rate of NF3 / Ar = 500/500 (sccm / sccm). The APC 26 sets the pressure in the reaction chamber 11 to 13 bar. After the cleaning gas is supplied in this way, the system controller 1000 starts to apply an RF power to the upper and lower electrodes to start the cleaning process. Note that approximately 1,500 watts of RF power is applied to the upper electrode and approximately 500 watts of RF power is applied to the lower electrode. When rf power is applied to a cleaning gas, a plasma of the gas is generated, especially those containing a fluorine atom. The NF3 plasma (mainly containing a fluorine atom group) reacts with SiOF deposited inside the reaction chamber 11 as explained in the following test method. As shown in the following equation, SiOF is decomposed into a gas such as S i Η 4 and discharged. ...

SiOF + NF3—SiF 4 + 1/202 + 1 / 2N2 The system controller 100 monitors the light emission of the plasma (eg, oxygen plasma) generated during the cleaning process, and detects the end of the cleaning process. As above, when the SlOF is decomposed, it will produce 〇2, and in the cleaning process, the amount = changes. That is, i, the system implement 100 can monitor the intensity of the radiation; two, and detect the end of the cleaning process. Please note that the end of the cleaning process can be detected by any method (such as detecting the pressure in the reaction chamber). -11-

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When the end of the cleaning process is reached, the system controller will stop applying an RF power to the upper and lower electrodes. Subsequently, the system controller 100 will open the valves VE and VF, supply the reaction chamber with 02 and Ar, and start to apply an RF power to the upper electrode. After that, the system controller 100 stops supplying the reaction chamber η, and stops applying the RF power to the upper electrode. The system controller 100 to 100 supplies the reaction chamber 11 and releases the electrostatic hoe. The dummy wafer w is then carried out from the reaction chamber 11 to complete the cleaning process. Example 1 Figures 2 and 3 show the results of a cleaning process using a plasma processing apparatus 10 according to the first specific embodiment of the present invention after the film formation process. In this example 1, during the film formation, a distance of 50 mm from the electrode on the wafer w was 50 mm, and a 3 μ〇 film with a thickness of 5 μm was formed. In addition, during the cleaning process, the system controller 100 supplies the reaction chamber U at NF3 / Ar = 500/500 (sccm / sccm), the pressure is 13 bar, and the upper electrode (electrode plate 17) is applied 1 500 Watt RF power supply. FIG. 2 shows the relationship between the cleaning time and the application of RF power when the RF power is applied to the upper and lower electrodes when the cleaning process is performed using the processing device constructed in the first embodiment. As shown in FIG. 2, compared with When only RF power is applied to the upper electrode, it is clear that a processing device that applies RF power to both the upper and lower electrodes can achieve cleaning in a shorter time. With 300 watts and 500 watts of RF power applied to the lower electrode, the cleaning time was reduced to 76 minutes and 70 minutes, respectively. Therefore, when the processing device constituted by this specific embodiment performs a cleaning process, not only the 11? Power is applied to the upper electrode, but also the lower electrode, a high cleaning rate can be obtained in this device, because -12- this paper size is applicable China National Standard (CNS) A4 specification (210 X 297 mm) 550674 A7 ___B7 ___ V. Description of the invention (U) Gas to generate plasma for this gas. In the plasma of the cleaning gas, fluorine atomic groups generated from NF3 are selectively released from the activator 27. As shown in Fig. 5, the lean cleaning gas line L4 is connected to two cleaning gas inlets 28 provided at the side walls of the reaction chamber 11. Two cleaning gas inlets 28 face each other at the inner wall of the reaction chamber 11. The cleaning gas plasma discharged from the activator 27 is introduced into the reaction chamber through two cleaning gas inlets 28. The operation of the processing apparatus 10 according to the second embodiment will now be explained with reference to Figs. 4 and 5. The following operation will now be described by way of example, and the present invention is not limited to the following. After a film is formed on a pre- sufficient number of wafers W, the system controller 100 starts the cleaning process of the reaction chamber 11. A cleaning dummy wafer W is loaded into the reaction chamber 1 丨 and placed on the carrier J 2. The electrostatic chuck holds the dummy wafer w on the carrier 12. Subsequently, the system controller 100 opens the valves VA and VB and supplies the reaction chamber η 3 with NF3 and Ar. The gas system is supplied to the reaction chamber 11 at a ratio of NF3 / Ar = 500/500 (sccm / sccm). The APC 26 maintains the pressure in the reaction chamber during the cleaning process in a range between 100 bar and 400 bar. After the NF3 gas and the Ar gas are supplied to the reaction chamber 11, the system controller 1000 starts the activator 27. The activator 27 activates the gas supplied thereto to generate a plasma ' of the gas, and then releases the plasma (mainly containing a fluorine atom group) to the reaction chamber Π. The cleaning gas mainly containing a fluorine atom group decomposes the SiOF film remaining and attached to the inside of the reaction chamber 11 into SiF4, etc., and discharges it from there. (%) 550674 A7 B7 V. Description of the invention (12 Q This is done by using the “絜” right, and the Si0F Yuemei deposited in the reaction chamber 11 is removed. The preparation system k prepares 100 according to the radiation intensity of oxygen. When it is determined that the cleaning process has been completed, the activator 27 will be closed. Furthermore, the system controller 100 will close the valves VA and VB, and stop supplying the cleaning gas to the reaction chamber. After that, the system controller 100 will open the valve VE and VF, supply ... and ^ into the reaction chamber. Subsequently, the system controller 100 will release the electrostatic chuck and stop supplying 〇2 and Ar into the reaction 1: 1. After that, the dummy wafer w is carried out from the reaction chamber 丨 丨 to complete the cleaning process. Example 2 ′ Figure 6 shows the relationship between the cleaning time and the internal pressure of the reaction chamber 丨 丨 and shows the use of a processing device according to a second specific embodiment of the present invention. After the film is formed, the cleaning process is performed. Some results. In Example 2, during the process of generating the film, a distance of 50 mm from the electrode on the wafer W and a thickness of 5 μm was generated. Figure 6 shows the use of various pressure levels As shown in Fig. 6, compared with the case where the pressure inside the reaction chamber 11 is about 0 bar, the high cleaning rate can be obtained if the pressure is in the range of 100 bar to 400 bar. Please also note that the highest cleaning rate can be obtained when the pressure inside the reaction chamber 11 is about 200 bar. According to this embodiment 2, the cleaning is performed within the pressure range of 100 ~ 400 Pa in the chamber 1 1. Cleanliness can be expected. Example 3 In the second embodiment described above, an RF power source can be applied to the upper electrode. This enables the cleaning gas to be activated outside the reaction chamber 1 1-15-This paper size is applicable China National Standard (CNS) A4 specification (210X 297 public love)

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Line 550674 A7 B7 13 V. Description of the invention ((mainly containing fluorine atom group) can be further activated in the reaction chamber. According to this structure, a high cleaning rate can be obtained. Figure 7 shows the thickness of tf on the wafer W In the case of performing a cleaning process after a 5 μm SiOF film, the relationship between the cleaning time and the RF power applied to the upper electrode. During the cleaning process, a 500 watt power supply was applied to the upper electrode 'reaction chamber 1 The pressure in 1 is 2000 bar. It is obvious in Figure 7 that if RF power is applied to the upper electrode and the remote plasma gas is used to clean the reaction chamber U, it can be achieved / same within a certain cleaning time. This time is shorter than one-fifth of the cleaning time without applying an RF power source. Therefore, if RF power is applied to the upper electrode to activate the cleaning gas in the reaction chamber 11, it can be performed with a high Cleaning process at a cleaning rate. Please> Want to execute the cleaning process with RF power applied not only to the upper electrode, but also to the lower electrode. Third Specific Embodiment According to a third specific embodiment of the present invention The processing device includes a reaction chamber. In this reaction chamber, a plasma CVD method is used to generate a SiOF film on the wafer w, which uses a process gas containing SiHU, SiF4, and 〇2. The cleaning gas is removed from the SiOF film remaining in the reaction chamber 11 after the film formation process. The cleaning gas system is activated outside the reaction chamber for use. The processing device according to the third embodiment of the present invention has a structure and a diagram As shown in Figs. 4 and 5, the processing device constituted by the second embodiment is the same. Fig. 8 shows the structure of the processing device according to the third embodiment. In Fig. 8, the same 16 paper sizes are applicable to the Chinese National Standard (CNS) A4 size (210 X 297 male I) 550674

The components are identified by the same reference numbers as in FIG. 4. As shown in FIG. 8 ′, the processing device constituted by this specific embodiment includes three cleaning gases σ 28 at the inner wall of the reaction chamber 1. The three cleaning gas inlets 2 8 are connected to the cleaning gas lines L 4, respectively. The cleaning gas inlets 2 8 are provided at approximately equal intervals. Through each of the cleaning gas inlets ", the cleaning gas is supplied to the reaction chamber at approximately the same supply pressure." Inner Example 4 "Fig. 9 shows a membrane formation process and a" process "performed by a processing device constituted by a third embodiment In Fig. 9, 'Comparison of the cleaning effect completed by this specific embodiment. More specifically,' Comparative cleaning gas is sprayed from two paths' and cleaning Λ body is sprayed from three paths into the reaction chamber. In the process of forming a film, a distance of 50 mm from the electrode on the wafer 1 and a thickness of 5 μm was formed. During the cleaning process, the Under pressure, will be called / ^^ 绍 嶋 嶋 ... ⑷ ^ ⑷ clean and clean gas is supplied into the reaction chamber Π, and passes through the reaction chamber 1 1. In an experiment, at many points in the reaction chamber Π A number of wafers are prepared, and a silicon oxide film is formed on each wafer. After the cleaning process, the thickness of the silicon oxide film of each wafer is measured. Based on the measured decrease in the thickness of the silicon oxide film, the cleaning of each point in the reaction chamber 11 is calculated Rate The point used to measure the rate of cleaning Identified by the symbols I to V, as shown in Fig. 8. For the processing device 10 for the cleaning gas coming out of the two nozzles, the cleaning rate is measured at points I to ν 夂. The wafer at point I is placed on the carrier 1. 2, the other wafers at points II to V are placed on the same plane as the carrier 12.

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As shown in FIG. 9, when the cleaning gas is supplied from two points (two paths), the cleaning rate at point 11 (farthest from the cleaning gas inlet 28) is any one of m, I :, and V. The cleaning rates are low. In this example 3, the cleaning gas system is supplied from three points (three paths), and the etching rate of point π is about or greater than the etching rates of other points I, IΠ, IV, and V. Because of this, in the processing device 10 constructed in the third embodiment, the reaction chamber Η contains a cleaning gas inlet 28, which can obtain a uniform cleaning rate and perform the cleaning process with high efficiency. In the third embodiment described above, the three cleaning gas inlets 28 are provided at equal intervals on the side walls of the reaction chamber. However, the cleaning gas inlet 28 may be provided at any other compartment. The number of cleaning gas inlets 28 is not limited to three, and three or more cleaning gas inlets may be provided. Fourth Embodiment A processing apparatus according to a fourth embodiment of the present invention includes a reaction chamber. In this reaction chamber, a plasma CVD method is used to form a SiOF film on a wafer. This method uses a process gas containing SiH4, SiF4, and O2. The SiO3 film remaining in the reaction chamber 11 after the film formation process is removed by using a cleaning gas containing NF3. The cleaning gas system is activated outside the reaction chamber for use. The processing apparatus according to the third specific embodiment of the present invention has the same structure as the processing apparatus constituted by the third specific embodiment shown in FIGS. 5 and 8. In the processing apparatus 10 constituted by the fourth embodiment, a cover member 29 is constructed on each of the three cleaning gas inlets 28, as shown in FIG. In this structure, -18- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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____ B7 ‘Explanation of the invention (16) / The cleaning gas is introduced into the reaction chamber 11 through the cover member 29. As shown in Fig. 11, the cover member 29 is formed in a rectangular shape and has five slit-like openings 30. These five openings 30 are parallel to each other. The size of the cover member 29 is approximately the same as that of the female-cleaning gas inlet 28. The cleaning gas is supplied to the reaction chamber 11 | t] through the opening 30. The cover member 29 is made of Al203. The opening ratio of the cover member 29 is set in a range from 50% to 80%. Please note that, in this case, the opening ratio represents the ratio of the area of the entire opening 30 included in the cover member 29 to the total area of the cover member 29, that is, (opening rate-(full area of opening 30) / (The entire area of the cover member 29) X 丨 〇〇. Example 5 FIG. 12 shows the results of a cleaning experiment performed by tf using the processing device i 〇 according to the fourth embodiment of the present invention. The cleaning experiment was performed in the same manner as in Example 4. In the film production process, the distance between the wafer W and the electrode is 50 mm, and a Si0F film with a thickness of 5 microns is generated. During the cleaning process, the cleaning gas system uses NF3 / Ar = 1000/1000 (sccm / sccm) ratio and is supplied when the pressure in the reaction chamber n is 13 bar. The opening ratio of the lid member 29 is set to 62%. For comparison, many lids are used Component 29 (opening rates of 10%, 35%, and 100%, respectively) was subjected to a cleaning experiment. 0 As in Experiment 4, in the cleaning experiment, a wafer (with oxidation on it) was prepared at each point in the reaction chamber. Fractured film formation). Measure the thickness of the oxidized stone film. Calculate the thickness of the hard oxide film Reduce 'to get the cleaning rate at each point. The points used to measure the cleaning rate are identified by the symbols 丨 to v, as shown in Figure 8 -19- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 (Mm) 550674 A7 B7 V. Description of the invention (η) tf. 凊 Note that the wafer at point I is placed on the carrier 丨 2 and the remaining wafers at points n to V are prepared the same as the carrier 丨 2 As shown in FIG. 12, if the opening rate of the cover member 29 is 100%, the individual cleaning rate at the point from ¥ to ¥ will vary greatly. If the opening rate of the cover member 29 is 10% or 3 5%, the cleaning rate in children will be fairly uniform. However, this cleaning rate is not high enough at an opening rate of 10% or 35%. In addition, according to the treatment device of the fourth example ( Using a cover member 29 with an opening rate of 62%, an almost uniform cleaning rate can be obtained at each point in the reaction chamber n. Therefore, the processing device 10 constructed in this embodiment (using an opening rate of 50% to In the cover member 29) in the range of 80%, a sufficiently high cleaning rate can be obtained. In addition, even A cleaning gas is supplied into the reaction chamber n. In the fourth embodiment, the opening 3 of the cover member 29 is shaped like a slit. However, the shape of the opening 30 is not limited to this. For example, the opening 30 may be formed in a circular shape. , Polygon, or any other shape. In addition, a plurality of slit-shaped openings 3G parallel to each other can be incorporated. In addition, the shape of the cover member _ is not limited to a rectangle, and the cover member 29 can be formed in a circular shape with the cleaning gas opening 2 Shao points of 8 match. In the fourth specific embodiment, the opening σ3ΰ of the cover member 29 can be set to various angles, as shown in FIG. 13. In this structure, the cleaning gas can be sprayed into the reaction chamber 11 uniformly. Fig. 13 shows a state in which the cover member 2911 of the ®1 is set in the cleaning gas population 28. Of the five openings 30 of the cover member 29, the center opening 30a forms a path in which the main surface of the disk cover member 29 is perpendicular. Open ground and ^ -20-

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Except 30a), two paths are formed adjacent to the central opening 30a of the main surface, and two ends are opened diagonally. More specifically, each of the openings 30b forms a main surface 矣 t / I and a king 胥 surface clip 60. The corner 30c forms 45. Angular path. In the structure in which the cover member 29 includes openings 30c forming a diagonal path with the main surface, cleaning gas is ejected diagonally from the openings 30b and 30c. Therefore, the gas is uniformly ejected from the cleaning gas inlet 28 '. Example 6 FIG. 14 shows the results of a cleaning experiment using a processing device according to the fourth embodiment including the cymbal member 29) of FIG. 13. These cleaning experiments were performed according to the same procedure as in Example 4. In the film production process, a distance of 50 mm from the electrode on the wafer W was formed to produce a SiOF film having a thickness of 5 micrometers. During the cleaning process, the cleaning gas flows into and through the reaction chamber 1 at a ratio of NF3 / Ar = 1000/1000 (sccm / sccm) and the pressure in the reaction chamber 11 is 13 bar. The opening ratio of the cover member 29 is set to 35%. For comparison, the same cleaning experiment as the experiment of Example 4 was performed using a cover member 29 containing only the vertical opening 30a of Fig. 15. As in Experiment 4, in the experiment, each point in the reaction chamber 1 丨 is provided with a wafer (on which an oxide film is formed), and the thickness of the oxide film is measured. The reduction in thickness of the silicon oxide film was measured to calculate the cleaning rate at each point. The points used to measure the cleaning rate are identified by the symbols I to V shown in FIG. The wafer at point I is placed on the carrier 12, and the remaining wafers at points II to V are prepared on the same plane as the carrier 12. As can be clearly seen in Figure 14, when using a cover member that includes only vertical openings 30a -21-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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Line 550674 A7 B7 5. In the case of (19) 29, the cleaning rate at point III is the lowest, and the cleaning rate at points I to v varies greatly. In the case of using a cover member including diagonal openings 30b and 30c, except for point I (on the carrier 12), the cleaning rates at points II to v are approximately the same. Therefore, by using the cover member 29 including the openings 30b and 30c forming a path at a predetermined angle (for example, 45 °, 60 °), the cleaning gas can be supplied into the reaction chamber 11 in all directions, so that the reaction can be cleaned uniformly. Interior of room 1 1. In the above example, the path angles from the diagonal openings 30b and 30c are not limited to 45. And 60. It could also be 70. , 30. and many more. In addition, depending on the number of openings 30, the path angle from the openings 30 may be changed. For example, if the number of the openings 30 is seven, the seven openings 30 may be sequentially formed to have 90 from the central opening to the openings at both ends. , 60. , 45. And 30. The angle of the path. Fifth Embodiment A processing apparatus according to a fifth embodiment of the present invention includes a reaction chamber. ~ 2 In this reaction chamber, a plasma CVD method is used to form a SiOF film on the wafer W. This method uses a process gas containing SiH4 and SiF4 * 〇2. The cleaning gas containing NF3 was used to remove the SiOF film remaining in the reaction chamber 11 after the film formation process. The cleaning gas system is activated outside the reaction chamber 1 for use. The processing apparatus according to the fifth specific embodiment of the present invention has the same structure as that shown in FIG. 4 'which is constituted by the second specific embodiment. In the processing apparatus according to the fifth embodiment, the reaction chamber is connected to the process gas line L1, the exhaust gas line L3, and the cleaning gas line L4. -22- This paper size is in accordance with China National Standard (CNS) A4 (21〇X 297 mm)-550674 A7 _________B7 V. Description of the invention (20) " " a " " A cross-sectional view of the processing device ιo of the fifth embodiment. In FIG. ⑺, the same components are identified by the same reference numbers as in FIG. 5. For simplicity, the gas lines and RF power are not shown in FIG. 16. In the processing device shown in the drawing, the cold agent path 31 is embedded in the electrode support frame 18 and the side wall of the reaction chamber 11. The cold rolling agent flows through the cooling agent path 31, so the Λ surface of the reaction chamber 11 (especially, the electrode plate 17 supported by the electrode support frame 18 and the wall of the reaction chamber 11) is maintained at a predetermined temperature. During the cleaning process, the system controller 100 controls the refrigerant flow system to adjust the temperature of the reaction chamber. In this specification, the term "cold; eastward agent" refers to maintaining the temperature of an object, not just a fluid material that cools (freezes) an object. Therefore, the inside of the standing reaction chamber 11 is basically maintained at a very low temperature, so that the electrode plate 17 and the like are substantially heated by the refrigerant. The electrode plate 17 has a plurality of holes 17a, and the process gas can be introduced into the reaction chamber u. In this structure, the electrode plate 17 is one of the components most likely to be adhered to the film, and therefore it should be the first component to be cleaned among the reaction chamber members. Because the structure of the electrode plate 17 includes many holes 7a, the electrode plate 7 cannot be easily cleaned. By heating the electrode plate 17 using a refrigerant, the cleaning rate of the electrode plate 17 can be partially increased. Example 7 Using a processing device 10 including a cover member 29, a cleaning process was performed under the following conditions. In the film formation process, the distance between the electrode and the electrode on the wafer W was 50 mm, and a 1: 1 film was formed with a thickness of 5 μm. During the cleaning process, the "cleaning" gas system flows at a ratio of NFs / Ar ^ 1000/1000 (sccm / sccm) and the pressure in the reaction chamber 11 is 13 bar. Incoming electricity -23- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 550674

The temperature of the refrigerant in the electrode supporting frame 18 and the wall of the reaction chamber U is set to ιοc. In order to obtain the results of the inspection, a chip (with a silicon oxide film formed thereon) is prepared on the electrode plate 7 and the reduction in the thickness of the silicon oxide film is measured. Figure Π shows the results of such an experiment in 7F. As shown in FIG. 7, compared with the case where the electrode plate i 7 is not heated, when the electrode plate 7 is heated, the cleaning rate of 冋 at the electrode plate 17 can be obtained. According to the processing apparatus of the fifth embodiment (where the electrode plate 17 is heated), the cleaning rate at the electrode plate 7 which is difficult to be sufficiently cleaned can be increased, so that the cleaning of the reaction chamber 丨 can be performed uniformly. Furthermore, by heating the walls of the reaction chamber II, a high cleaning efficiency of the entire reaction chamber 11 can be obtained. In a fifth embodiment, the electrode plate 17 and the wall of the reaction chamber 丨 are heated by a cold roll. However, the wall can be heated using any other method. For example, as shown in FIG. 18, if the refrigerant path 3 丨 is not used, the reaction chamber i i may also include a heater 32 such as a resistor or the like. As shown in FIG. 19, 'the electrode plate? And the wall of the reaction chamber u can be heated by a lamp 33', such as a halogen lamp or the like. In this case, a window 3 4 may be provided on a side surface of the reaction chamber 丨, and the light is irradiated from the lamp 33 to the electrode plate 17 and the like through the window 34 to heat it. Figure Π also shows that except for the case where the electrode plate 17 is not heated and the refrigerant is heated, the electrode plate 17 is heated by the heater 32 shown in FIG. Case, results of cleaning experiments. The heater 32 and the lamp 33 are provided at 10 ° C. As shown in FIG. 17, the electrode plate 17 is heated by the heater 32 or the lamp 33 to obtain a high cleaning rate on the electrode plate 17. Therefore, the electrode plate 丨7 is heated, and -24- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 550674 A7 B7 V. Description of the invention (22) The electrode plate that can not be cleaned is raised 1 7 places In the fifth specific embodiment of the present invention, the temperature of the heater 32 or the lamp 33 is set to 100 ° C. However, as long as the inside of the reaction chamber 11 can be cleaned uniformly, the temperature is not limited to 1 〇 ° C. In the first to fifth specific embodiments described above, in the parallel plate type plasma processing apparatus 10, a SiOF film is generated on the wafer W, and the reaction chamber 11 is cleaned using NF3 gas. However, the film to be generated is not limited to the SiOF film, and may also generate a film containing debris, such as Si02, SiC, SiN, SiCN, SiCH, SiOCH, etc. The cleaning gas may include not only NF3 gas but also fluorine-containing gas. Gas, such as CF4, C2F6, SF6, etc., or a gas containing gas For example, ClyBCl4, etc. The present invention can also be applied to a processing device for processing [CD (Liquid Crystal Display) equipment. In the second to fifth embodiments, the cleaning gas is activated to generate a plasma of the cleaning gas, Beside those that contain atomic groups. However, by activating the cleaning gas, active species other than atomic groups can also be used to perform the cleaning process of the reaction chamber. According to the second to fifth embodiments, the present invention is not only applicable to It is applied to the parallel plate type plasma processing device, and it can also be applied to any other type of plasma processing device, such as ECR-type processing device, lcp_-type processing device, spiral-type processing device, microwave-type processing device and so on. The present invention can be applied not only to a plasma processing apparatus, but also to other processing apparatuses, such as an etching apparatus, a sputtering apparatus, a heat treatment apparatus, and the like.

Claims (1)

550674 A8 B8 C8 D8 Six patent application scope A processing device comprising: a reaction chamber; a gas source for supplying gas for cleaning the interior of the reaction chamber; a gas pipeline for introducing the gas supplied by the gas source into the A reaction chamber; an activator provided in the gas pipeline and activating a gas supplied by the gas source; and at least three gas inlets provided in a side wall of the reaction chamber and connected to the gas pipeline. For example, the processing device of the scope of patent application, wherein the at least three gas inlets are arranged at approximately equal intervals. For example, the processing device of the first patent application range, wherein the processing device includes a plasma generating mechanism, and plasma processing is provided in the reaction chamber for the target object. For example, the treatment device of the scope of patent application, wherein the activator generates a plasma of gas. A processing device includes: a reaction chamber; a gas source for supplying a gas for cleaning the inside of the reaction chamber; a gas line for introducing a gas supplied from the gas source into the reaction chamber; an activator provided in The gas pipeline activates the gas supplied by the gas source; and a gas inlet is provided on one surface of the reaction chamber and is connected to -26- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X (297 mm) Binding ο 5 5 The gas pipeline, and wherein the gas inlet is covered by a cover member, the cover member includes at least an opening, the area of which is between 50% and 80/0 of the main surface area of the cover member. 6. The processing device according to item 5 of the scope of patent application, wherein the processing device includes a plasma generating mechanism, and provides plasma processing to the target object in the reaction chamber. 7. The processing device according to item 5 of the patent application scope, wherein the activator generates a gas plasma. 8. A processing device comprising: a reaction chamber; a gas source for supplying a gas for cleaning the interior of the reaction chamber; a gas line for introducing a gas supplied from the gas source into the reaction chamber; an activator Is provided in the gas line and activates the gas supplied by the gas source; and a gas inlet is provided on the surface of the reaction chamber and is connected to the gas line, wherein the gas inlet is covered by a cover member, the cover The member is provided with at least one opening in a direction diagonal to its thickness direction. 9. The processing device according to item 8 of the scope of patent application, wherein the processing device includes a plasma generating mechanism, and the target chamber is provided with plasma processing in the reaction chamber. 10 · If the processing device of the scope of patent application No.8, where the activator will produce -27- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 550674 AB c D Gas plasma. 11. A processing device comprising: a reaction chamber; a gas source for supplying a gas for cleaning the inside of the reaction chamber; a gas line for introducing a gas supplied from the gas source into the reaction chamber; an activator ' Prepared in the gas pipeline, and activated gas supplied from the gas source; and a heating mechanism for heating the inner surface of the reaction chamber. 12. The processing device according to item 11 of the application, wherein the heating mechanism includes a refrigerant path embedded in the reaction chamber. 13. The processing device of claim 11 in which the thermal mechanism includes a heater embedded in the reaction chamber. 14. The processing device according to item 丨 丨 in the scope of patent application, wherein: the reaction chamber includes a window; and the thermal mechanism is prepared outside the reaction chamber and includes a lamp for radiating light to the reaction chamber through the window. The inner surface. 15. The processing device according to item 11 of the patent application scope, wherein the processing device includes a plasma generating mechanism, and plasma processing is provided in the reaction chamber for the target object. 16. The processing device of claim 11 in which the activator generates a plasma of gas. Π · —A method for cleaning a processing device. The device includes two electrodes in a reaction chamber. The method consists of the following steps: -28- This paper size is applicable to China National Elephant Standard (CNS) A4 (210 X 297) Mm) 550674 Scope of patent application • Introducing a cleaning gas into the reaction chamber; and applying RF power to two electrodes to activate the cleaning gas. 18. A method as claimed in claim 17 in which the cleaning gas is activated to generate its plasma. 19. A method for cleaning a processing device comprising two electrodes in a reaction chamber, the method comprising the following steps: activating a cleaning gas outside the reaction chamber; introducing the activated gas into the reaction chamber; and An RF power source is applied to at least one of the electrodes to activate the cleaning gas. 20. The method of claim 19, wherein the cleaning gas is activated to generate its plasma. 21. A method for cleaning a processing apparatus, the apparatus comprising a reaction chamber, the method comprising the steps of: activating a cleaning gas outside the reaction chamber; and introducing the activated gas into the reaction chamber from at least three paths. 22. The method according to item 21 of the patent application scope, wherein the processing device provides plasma treatment to the target object in the reaction chamber. 23. The method of claim 21, wherein the cleaning gas is activated to generate its plasma. 24. A method for cleaning a processing device, the device comprising a reaction chamber, the method comprising the steps of: activating a cleaning gas outside the reaction chamber; and introducing the activated gas into the reaction chamber from all directions ° -29- This paper size applies to Chinese National Standards < CNS) A4 specifications (210X297 mm) 550674 A8 B8 C8 ^ ___ D8____ VI. Application for patent scope 25. For the method of the scope of patent application No. 24, in which the processing device targets the target in the reaction chamber The object is provided with plasma treatment. 26. The method of claim 24, wherein the cleaning gas is activated to generate its plasma. 27. A method for cleaning a processing device, the device comprising a reaction chamber, the method comprising the following steps: activating a cleaning gas outside the reaction chamber; introducing the gas into the reaction chamber; and maintaining the pressure in the reaction chamber at 100 Bar to 400 bar. 28. The method of claim 27, wherein the processing device provides plasma treatment of the target object in the reaction chamber. 29. The method of claim 27, wherein the cleaning gas is activated to generate its plasma. 30. A method for cleaning a processing device, the device comprising a reaction chamber, the method comprising the steps of: activating a cleaning gas outside the reaction chamber; introducing the gas into the reaction chamber; and heating the inner surface of the reaction chamber. 31. The method of claim 30, wherein the processing device provides plasma treatment of the target object in a reverse room. ^ 32. The method according to item 30 of the scope of patent application, wherein the cleaning gas is activated to generate its plasma. -30-