TW200812098A - Semiconductor photo detecting element, manufacturing method of the same, and manufacturing method of optoelectronic integrated circuit - Google Patents

Semiconductor photo detecting element, manufacturing method of the same, and manufacturing method of optoelectronic integrated circuit Download PDF

Info

Publication number
TW200812098A
TW200812098A TW096123757A TW96123757A TW200812098A TW 200812098 A TW200812098 A TW 200812098A TW 096123757 A TW096123757 A TW 096123757A TW 96123757 A TW96123757 A TW 96123757A TW 200812098 A TW200812098 A TW 200812098A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
semiconductor
layer
band gap
gap energy
Prior art date
Application number
TW096123757A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshihiro Yoneda
Ryuji Yamabi
Original Assignee
Eudyna Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eudyna Devices Inc filed Critical Eudyna Devices Inc
Publication of TW200812098A publication Critical patent/TW200812098A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

Landscapes

  • Light Receiving Elements (AREA)
TW096123757A 2006-06-30 2007-06-29 Semiconductor photo detecting element, manufacturing method of the same, and manufacturing method of optoelectronic integrated circuit TW200812098A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006182325A JP5197930B2 (ja) 2006-06-30 2006-06-30 半導体受光素子の製造方法

Publications (1)

Publication Number Publication Date
TW200812098A true TW200812098A (en) 2008-03-01

Family

ID=38875728

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096123757A TW200812098A (en) 2006-06-30 2007-06-29 Semiconductor photo detecting element, manufacturing method of the same, and manufacturing method of optoelectronic integrated circuit

Country Status (3)

Country Link
US (2) US7696593B2 (https=)
JP (1) JP5197930B2 (https=)
TW (1) TW200812098A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4693827B2 (ja) * 2007-09-20 2011-06-01 株式会社東芝 半導体装置とその製造方法
DE102008038750A1 (de) * 2008-08-12 2010-02-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US8072041B2 (en) * 2009-04-08 2011-12-06 Finisar Corporation Passivated optical detectors with full protection layer
JP2011035114A (ja) * 2009-07-31 2011-02-17 Renesas Electronics Corp メサ型フォトダイオード及びその製造方法
JP5982711B2 (ja) * 2011-04-28 2016-08-31 住友電工デバイス・イノベーション株式会社 半導体受光装置
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
RU2644992C2 (ru) * 2016-05-31 2018-02-15 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления фотопреобразователя
JP7275567B2 (ja) * 2018-12-26 2023-05-18 富士通株式会社 赤外線検出器及びその製造方法、撮像素子、撮像システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
JPH07118548B2 (ja) * 1986-04-28 1995-12-18 住友電気工業株式会社 ▲ｉｉｉ▼−ｖ族多元化合物半導体ｐｉｎフオトダイオ−ド
JPH07123170B2 (ja) * 1990-08-07 1995-12-25 光計測技術開発株式会社 受光素子
JP4136009B2 (ja) * 1995-02-02 2008-08-20 住友電気工業株式会社 ｐｉｎ型受光素子、およびｐｉｎ型受光素子の製造方法
US5712504A (en) * 1995-02-02 1998-01-27 Sumitomo Electric Industries, Ltd. Pin type light-receiving device, opto electronic conversion circuit, and opto-electronic conversion module
US6065418A (en) * 1996-02-08 2000-05-23 Quantum Group, Inc. Sequence of selective emitters matched to a sequence of photovoltaic collectors
JP2001144278A (ja) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co Ltd 受光素子アレイ
JP5011607B2 (ja) * 2001-04-16 2012-08-29 住友電気工業株式会社 受光素子
JP4765211B2 (ja) * 2001-07-06 2011-09-07 住友電気工業株式会社 ｐｉｎ型受光素子
JP4084958B2 (ja) * 2002-05-24 2008-04-30 日本オプネクスト株式会社 半導体受光装置の製造方法
US6919219B2 (en) * 2002-11-21 2005-07-19 Texas Instruments Incorporated Photon-blocking layer
JP2005129689A (ja) * 2003-10-23 2005-05-19 Sumitomo Electric Ind Ltd 半導体受光素子及び光受信モジュール
JP5052007B2 (ja) * 2005-12-28 2012-10-17 住友電工デバイス・イノベーション株式会社 半導体装置

Also Published As

Publication number Publication date
US20100151620A1 (en) 2010-06-17
US8105866B2 (en) 2012-01-31
US7696593B2 (en) 2010-04-13
US20080001245A1 (en) 2008-01-03
JP2008010776A (ja) 2008-01-17
JP5197930B2 (ja) 2013-05-15

Similar Documents

Publication Publication Date Title
US11393940B2 (en) Photodetector and method for forming the same
US5525828A (en) High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
TW200812098A (en) Semiconductor photo detecting element, manufacturing method of the same, and manufacturing method of optoelectronic integrated circuit
CN102449775B (zh) 半导体基板、光电转换器件、半导体基板的制造方法和光电转换器件的制造方法
US20110031578A1 (en) Semiconductor photodiode device and manufacturing method thereof
JP2867983B2 (ja) フォトディテクタおよびその製造方法
CN111261748B (zh) 用于制造具有低暗电流的基于锗的二极管阵列的方法
JPH0287684A (ja) 集積ｐｉｎ光検出器および方法
CA1294349C (en) Rear entry photodiode
CN102449784B (zh) 传感器、半导体基板、和半导体基板的制造方法
JP2021504980A (ja) フレキシブル二重接合太陽電池
US20050051705A1 (en) Light conversion apparatus with topside electrode
FR2694134A1 (fr) Procédé de fabrication d'une diode photovoltaïque et diode à structure plane.
EP0260955B1 (en) Photoelectric converter
CN115274894A (zh) Si衬底上GeSn及Ge雪崩光电二极管及其制造方法
JP4765211B2 (ja) ｐｉｎ型受光素子
CN114649432B (zh) 反转型太赫兹光电探测器及其制备方法
CN101506998B (zh) 光检测器和光检测器的制造方法
KR20260020049A (ko) 반도체 디바이스 및 그 제조 방법
US6707081B2 (en) Photodetector with built-in circuit
JP2004521489A (ja) 変性長波長高速フォトダイオード
JP4094471B2 (ja) 半導体受光装置
US20240250206A1 (en) Optoelectronic device and method for manufacturing same
CN119153558A (zh) 一种光电探测器及其制备方法
JPS6155791B2 (https=)