JP2021504980A - フレキシブル二重接合太陽電池 - Google Patents
フレキシブル二重接合太陽電池 Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 137
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 110
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 249
- 239000012790 adhesive layer Substances 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 7
- 239000011247 coating layer Substances 0.000 claims description 4
- 210000002445 nipple Anatomy 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 18
- 239000000969 carrier Substances 0.000 description 7
- 238000005304 joining Methods 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000002082 metal nanoparticle Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
Claims (7)
- 下部電極層を含むフレキシブル基板と、
前記フレキシブル基板の前記下部電極層と接触するInGaAs太陽電池と、
前記InGaAs太陽電池上に配置され、前記InGaAs太陽電池と直列連結したGaAs太陽電池と、を含み、
前記GaAs太陽電池はその下部面に形成された金属ナノディスクアレイを含み、
前記金属ナノディスクアレイの下部には前記金属ナノディスクアレイと整列した空きスペースアレイが配置されることを特徴とするフレキシブル二重接合太陽電池。 - 前記InGaAs太陽電池は、
前記下部電極層上に配置された下部金属接着層と、
前記上部金属接着層上に配置された半導体接着層と、
前記半導体接着層上に配置された上部金属接着層と、
前記上部金属接着層上に配置されたn+−InPコンタクト層と、
前記n−InPコンタクト層上に配置されたn−InGaAsベース層と、
前記n−InGaAsベース層上に配置されたp+−InGaAsエミッタ層と、
前記p−InGaAsエミッタ層上に配置されたp+−InP窓層と、
前記p+−InP窓層上に配置されたp++−InGaAsコンタクト層と、を含むことを特徴とする請求項1に記載のフレキシブル二重接合太陽電池。 - 前記GaAs太陽電池は、
前記p++−InGaAsコンタクト層上に配置されたn+−GaAsコンタクト層と、
前記n+−GaAsコンタクト層上に配置されたn+−InGaPバックサーフェイスフィールド層(back−surface field layer)と、
前記n+−InGaPバックサーフェイスフィールド層上に配置されたn−GaAsベース層と、
前記n−GaAsベース層上に配置されたp+−GaAsエミッタ層と、
前記p+−GaAsエミッタ層上に配置されたp+−InGaP窓層と、
前記p+−InGaP窓層上に配置されたp+−GaAsコンタクト層と、を含み、
前記金属ナノディスクアレイは、前記n+−GaAsコンタクト層の下部面に配置され、
前記空きスペースアレイは、前記p++−InGaAsコンタクト層と前記金属ナノディスクアレイとの間に配置されることを特徴とする請求項2に記載のフレキシブル二重接合太陽電池。 - 前記p+−GaAsコンタクト層は、陷沒部を含み、
前記陥没部を埋める無反射コーティング層と、
前記p+−GaAsコンタクト層上に配置された上部電極層と、をさらに含むことを特徴とする請求項3に記載のフレキシブル二重接合太陽電池。 - 前記金属ナノディスクアレイは金(Au)であり、
前記金属ナノディスクアレイの厚さは40nmないし60nmであり、
前記金属ナノディスクアレイの周期は50nmないし200nmであり、
前記金属ナノディスクアレイの直径は30nmないし120nmであることを特徴とする請求項1に記載のフレキシブル二重接合太陽電池。 - n+−GaAs基板上にGaAsバッファ層、AlAs犠牲層、p+−GaAsコンタクト層、p+−InGaP窓層、p+−GaAsエミッタ層、n−GaAsベース層、n+−InGaPバックサーフェイスフィールド層、及びn+−GaAsコンタクト層を備えたGaAs太陽電池を用意する段階と、
前記GaAs太陽電池のn+−GaAsコンタクト層に形成されたホールアレイの下部面に金属ナノディスクアレイを形成し、前記金属ナノディスクアレイの上部には空きスペースを形成する段階と、
n+−InP基板上に順次積層されたInPバッファ層、AlAs補助犠牲層、p++−InGaAsコンタクト層、p+−InP窓層、p+−InGaAsエミッタ層、n−InGaAsベース層、及びn+−InPコンタクト層を備えたInGaAs太陽電池を用意する段階と、
前記InGaAs太陽電池のn+−InPコンタクト層上に上部金属接着層、半導体接着層、及び下部金属接着層を積層する段階と、
前記InGaAs太陽電池に積層された下部金属接着層と下部電極層を含むフレキシブル基板とボンディングする段階と、
前記InGaAs太陽電池のAlAs補助犠牲層を除去してp++−InGaAsコンタクト層を露出させる段階と、
前記InGaAs太陽電池の前記p++−InGaAsコンタクト層と前記GaAs太陽電池のn+−GaAsコンタクト層をウエハボンディングして二重接合太陽電池を形成する段階と、
前記二重接合太陽電池で前記GaAs太陽電池の前記AlAs犠牲層を除去して前記p+−GaAsコンタクト層を露出させる段階と、を含むことを特徴とするフレキシブル二重接合太陽電池の製造方法。 - 前記p+−GaAsコンタクト層上に局部的に上部電極層を形成する段階と、
前記p+−GaAsコンタクト層が局部的に除去された陥没部に無反射コーティング層を形成する段階と、をさらに含むことを特徴とする請求項6に記載のフレキシブル二重接合太陽電池の製造方法。
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WO2013042525A1 (ja) * | 2011-09-21 | 2013-03-28 | ソニー株式会社 | 多接合型太陽電池、化合物半導体デバイス、光電変換素子及び化合物半導体層・積層構造体 |
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JP2014199915A (ja) * | 2013-03-14 | 2014-10-23 | 株式会社リコー | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 |
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US20170330986A1 (en) * | 2016-05-12 | 2017-11-16 | North Carolina State University | Intermetallic bonded multi-junction structures |
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