CN110634992B - 用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法 - Google Patents
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Abstract
本发明公开了一种用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法,属于半导体技术领域,其特征在于:包括如下步骤:S1、光刻图形;S2、电沉积;S3、真空封装;具体制造步骤如下:S301、将电沉积图形化衬底、封装胶以及聚酰亚胺薄膜依次叠层放入层压机中;S302、设定层压机程序进行真空封装工艺,真空度不大于1Pa,压力范围为20Pa‑1kPa。温度范围为80℃‑200℃,时间范围为20min‑200min;S303、待程序结束,将产品取出冷却。通过采用上述技术方案,本发明能够使薄膜砷化镓太阳电池实现减轻重量,柔性可弯折的产品特点。使其具有更广泛的应用范围。
Description
技术领域
本发明属于半导体技术领域,尤其涉及一种用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法。
背景技术
金属有机化合物气相外延技术,简称MOCVD,是用氢气载气将金属有机化合物蒸汽和非金属氢化物经过多路开关送入反应室内加热的衬底上,通过分解反应而最终在其上生长出外延层的先进技术.它的生长过程涉及流体力学,气相及固体表面反应动力学及二者相耦合的复杂过程。一般其外延生长是在热力学近平衡条件下进行的。
以砷化镓为衬底生长制备的Ⅲ-Ⅴ族外延结构是制作太阳能电池及LED的重要技术手段。其中,太阳能电池可生长为多结太阳电池,其效率远高于其他种类太阳电池。同时,由于砷化镓属于直接带隙半导体,只需要较薄的结构就可以实现所需的功能。目前,柔性薄膜砷化镓太阳电池多使用整面金属作为衬底使用。其缺点是比强度小、重量高。
发明内容
针对上述技术问题,本发明提供一种用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法,能够使薄膜砷化镓太阳电池实现减轻重量,柔性可弯折的产品特点。使其具有更广泛的应用范围。
本发明所采用的具体技术方案为:
一种用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法,包括下列步骤:
1、光刻图形:
为实现复合结构衬底的制备工艺,需采用光刻-显影工艺在外延衬底上制作多边形图形。
所使用的外延片已经在MOCVD中生长外延层,并且需要在薄膜砷化镓太阳电池外延层上采用真空蒸发工艺蒸镀一层金属作为种子层,该金属层可以为Au、Ag、Cu、Fe、Ni等金属及其合金。要求具有良好的欧姆接触及良好的可镀性。其厚度为50-1000nm。
所选用的外延衬底包含但不限于砷化镓、磷化铟、锗、硅等材料;
所采用的光刻胶为负胶。
所光刻的图形为等边多边形。多边形边数为3-8。多边形边长为100-10000微米,边的宽度为50-5000微米。
具体制造步骤如下:
(1)将满足要求的外延片放入丙酮中超声清洗5分钟以上,然后冲水甩干;
(2)将清洗完成的外延片放入涂胶机台,均匀涂覆一层光刻胶厚度约在 500-3000nm;
(3)使用光刻显影工艺制作衬底图形如图。
2、电沉积:
采用电沉积工艺制作图形化金属衬底。
所采用的电沉积溶液为含铜盐的溶液。其中主要成分为硫酸铜或者甲基磺酸铜。添加剂包含作为电化学沉积加速剂的含磺烷基磺酸、二硫代氨基甲酸衍生物和双硫有机酸,如SPS。作为抑制剂的烯烃氧化聚合物,如PEG。作为整平剂的大分子氮基-侧基聚合物,如PEI以及卤素离子Cl-。
所采用的铜阳极为为纯铜阳极或者含磷铜阳极。
具体制造步骤如下:
(1)将光刻好图形的外延片放入电沉积溶液中,分别在铜阳极及外延片上接通正负电极;
(2)电沉积电流密度为0.2A/dm2-10A/dm2;
(3)电沉积时间为5min-20min。
(4)电沉积完成后,用去离子水冲洗5-10次。泡入去胶液中去除光刻胶,然后再用去离子水冲洗5-10次。最后利用甩干机或氮气枪等脱水。
3、真空封装:
采用层压机对复合衬底进行有机材料真空封装。进一步提高衬底的机械强度及耐腐蚀性能。
所采用的封装胶为EVA、POE等有机胶膜。
所采用的封装膜为聚酰亚胺薄膜。
具体制造步骤如下:
(1)将电沉积图形化衬底、封装胶以及聚酰亚胺薄膜依次叠层放入层压机中。
(2)设定层压机程序进行真空封装工艺。真空度不大于1Pa。压力范围为20Pa-1kPa。温度范围为80℃-200℃。时间范围为20min-200min
(3)待程序结束,将产品取出冷却,即实现了用于薄膜砷化镓太阳电池的复合结构材料衬底的制备过程。
本发明的优点及积极效果为:
通过采用上述技术方案,本发明具有如下的技术效果:
1、本发明由于使用复合结构衬底作为薄膜砷化镓太阳电池支撑衬底。可以有效减轻器件重量,提高重量比功率,同时具有柔性功能。与常见的单一金属材料或有机材料衬底相比,具有更高的比强度、更小的密度。
2、本发明由于使用蜂窝结构或其他多边形结构作为柔性衬底骨架。改善了柔性衬底材料的机械强度。
3、本发明由于采用了电沉积工艺及真空封装工艺制备复合衬底。具有工艺简单、技术成熟、成本低廉等特点。
附图说明
图1为本发明所需外延结构示意图;
图2为本发明以六边形为例的图形化结构示意图;
图3为本发明复合衬底结构示意图。
1、种子层;2、薄膜砷化镓太阳电池外延层;3、外延衬底;4、以六边形为例的图形化结构;5、有机胶膜;6、聚酰亚胺薄膜。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细描述。应当理解,此处所描述的具体实施例仅仅用于解释本发明,并不用于限定本发明。
相反,本发明涵盖任何由权利要求定义的在本发明的精髓和范围上做的替代、修改、等效方法以及方案。进一步,为了使公众对本发明有更好的了解,在下文对本发明的细节描述中,详尽描述了一些特定的细节部分。对本领域技术人员来说没有这些细节部分的描述也可以完全理解本发明。
请参阅图1至图3,
本发明实施例提供的一种用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法,步骤如下:
1、光刻图形:
为实现复合结构衬底的制备工艺,需采用光刻-显影工艺在外延衬底3上制作多边形图形。
所使用的外延片已经在MOCVD中生长外延层,并且需要在薄膜砷化镓太阳电池外延层2上采用真空蒸发工艺蒸镀一层金属作为种子层1,该金属层可以为Au、Ag、Cu、Fe、Ni等金属及其合金。要求具有良好的欧姆接触及良好的可镀性。其厚度为50-1000nm。
所选用的外延衬底包含但不限于砷化镓、磷化铟、锗、硅等材料;
所采用的光刻胶为负胶。
所光刻的图形为等边多边形。多边形边数为3-8。多边形边长为100-10000微米,边的宽度为50-5000微米。请参阅图2,等边多边形是以六边形为例的图形化结构4;
具体制造步骤如下:
(1)将满足要求的外延片放入丙酮中超声清洗5分钟以上,然后冲水甩干;
(2)将清洗完成的外延片放入涂胶机台,均匀涂覆一层光刻胶厚度约在 500-3000nm;
(3)使用光刻显影工艺制作衬底图形如图。
2、电沉积:
采用电沉积工艺制作图形化金属衬底。
所采用的电沉积溶液为含铜盐的溶液。其中主要成分为硫酸铜或者甲基磺酸铜。添加剂包含作为电化学沉积加速剂的含磺烷基磺酸、二硫代氨基甲酸衍生物和双硫有机酸,如SPS。作为抑制剂的烯烃氧化聚合物,如PEG。作为整平剂的大分子氮基-侧基聚合物,如PEI以及卤素离子Cl-。
所采用的铜阳极为为纯铜阳极或者含磷铜阳极。
具体制造步骤如下:
(1)将光刻好图形的外延片放入电沉积溶液中,分别在铜阳极及外延片上接通正负电极;
(2)电沉积电流密度为0.2A/dm2-10A/dm2;
(3)电沉积时间为5min-20min。
(4)电沉积完成后,用去离子水冲洗5-10次。泡入去胶液中去除光刻胶,然后再用去离子水冲洗5-10次。最后利用甩干机或氮气枪等脱水。
3、真空封装:
采用层压机对复合衬底进行有机材料真空封装。进一步提高衬底的机械强度及耐腐蚀性能。
所采用的封装胶为EVA、POE等有机胶膜5。
所采用的封装膜为聚酰亚胺薄膜6。
具体制造步骤如下:
(1)将电沉积图形化衬底、封装胶以及聚酰亚胺薄膜依次叠层放入层压机中。
(2)设定层压机程序进行真空封装工艺。真空度不大于1Pa。压力范围为20Pa-1kPa。温度范围为80℃-200℃。时间范围为20min-200min。
(3)待程序结束,将产品取出冷却,即实现了用于薄膜砷化镓太阳电池的复合结构材料衬底的制备过程。
以上所述仅是对本发明的较佳实施例而已,并非对本发明作任何形式上的限制,凡是依据本发明的技术实质对以上实施例所做的任何简单修改,等同变化与修饰,均属于本发明技术方案的范围内。
Claims (1)
1.一种用于薄膜砷化镓太阳电池复合结构材料衬底的制备方法,其特征在于:包括如下步骤:
S1、光刻图形:
具体制造步骤如下:
S101将满足要求的外延片放入丙酮中超声清洗5分钟以上,然后冲水甩干;
S102将清洗完成的外延片放入涂胶机台,在种子层上涂覆一层光刻胶,光刻胶的厚度范围是 500nm-3000nm;
S103使用光刻显影工艺制作衬底图形;
S2、电沉积:
具体制造步骤如下:
S201、将光刻好图形的外延片放入电沉积溶液中,分别在铜阳极及外延片上接通正负电极;
S202、电沉积电流密度为0.2A/dm2-10A/dm2;
S203、电沉积时间为5min-20min;
S204、电沉积完成后,用去离子水冲洗5-10次,泡入去胶液中去除光刻胶,然后再用去离子水冲洗5-10次,最后利用甩干机或氮气枪脱水;
S3、真空封装:
具体制造步骤如下:
S301、将电沉积图形化衬底、封装胶以及聚酰亚胺薄膜依次叠层放入层压机中;
S302、设定层压机程序进行真空封装工艺,真空度不大于1Pa,压力范围为20Pa-1kPa,温度范围为80℃-200℃,时间范围为20min-200min;
S303、待程序结束,将产品取出冷却。
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Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1787233A (zh) * | 2004-12-09 | 2006-06-14 | 中国科学院半导体研究所 | 集成太阳电池的制备方法 |
CN102201534A (zh) * | 2010-12-24 | 2011-09-28 | 北京精诚铂阳光电设备有限公司 | 大面积柔性光电器件 |
CN102376788A (zh) * | 2010-08-11 | 2012-03-14 | 朱忻 | 用于太阳能电池的多层薄膜及其制备方法和用途 |
CN103199004A (zh) * | 2013-02-22 | 2013-07-10 | 国家纳米科学中心 | 一种iii族氮化物纳米结构的制作方法 |
CN103594539A (zh) * | 2013-10-22 | 2014-02-19 | 扬州乾照光电有限公司 | 一种柔性多结GaAs太阳电池及其制备方法 |
CN105140318A (zh) * | 2015-06-30 | 2015-12-09 | 苏州强明光电有限公司 | 太阳能电池外延片及其制作方法 |
CN105489700A (zh) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | 一种带集成二极管的太阳电池的制备方法 |
CN105552140A (zh) * | 2016-01-29 | 2016-05-04 | 扬州乾照光电有限公司 | 高比功率GaAs多结柔性薄膜太阳电池及其制备方法 |
CN106098818A (zh) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法 |
KR101696431B1 (ko) * | 2015-09-24 | 2017-01-16 | 한양대학교 에리카산학협력단 | 초박형 실리콘-금속 이종 접합 기판 제조 방법 |
CN206003783U (zh) * | 2016-08-26 | 2017-03-08 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池 |
CN108258084A (zh) * | 2018-01-26 | 2018-07-06 | 扬州乾照光电有限公司 | 一种柔性薄膜太阳能电池及其制作方法 |
CN108428731A (zh) * | 2018-05-17 | 2018-08-21 | 武汉华星光电半导体显示技术有限公司 | 柔性oled显示面板及柔性oled显示装置 |
CN108615706A (zh) * | 2018-07-04 | 2018-10-02 | 南通沃特光电科技有限公司 | 一种晶圆单片化方法 |
WO2018195412A1 (en) * | 2017-04-21 | 2018-10-25 | Massachusetts Institute Of Technology | Systems and methods for fabricating photovoltaic devices via remote epitaxy |
CN109802017A (zh) * | 2019-01-18 | 2019-05-24 | 京东方科技集团股份有限公司 | Led外延片及制作方法、led芯片 |
KR101957801B1 (ko) * | 2017-11-28 | 2019-07-04 | 한국표준과학연구원 | 플렉서블 이중접합 태양전지 |
-
2019
- 2019-09-04 CN CN201910831445.7A patent/CN110634992B/zh active Active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1787233A (zh) * | 2004-12-09 | 2006-06-14 | 中国科学院半导体研究所 | 集成太阳电池的制备方法 |
CN102376788A (zh) * | 2010-08-11 | 2012-03-14 | 朱忻 | 用于太阳能电池的多层薄膜及其制备方法和用途 |
CN102201534A (zh) * | 2010-12-24 | 2011-09-28 | 北京精诚铂阳光电设备有限公司 | 大面积柔性光电器件 |
CN103199004A (zh) * | 2013-02-22 | 2013-07-10 | 国家纳米科学中心 | 一种iii族氮化物纳米结构的制作方法 |
CN103594539A (zh) * | 2013-10-22 | 2014-02-19 | 扬州乾照光电有限公司 | 一种柔性多结GaAs太阳电池及其制备方法 |
CN105140318A (zh) * | 2015-06-30 | 2015-12-09 | 苏州强明光电有限公司 | 太阳能电池外延片及其制作方法 |
KR101696431B1 (ko) * | 2015-09-24 | 2017-01-16 | 한양대학교 에리카산학협력단 | 초박형 실리콘-금속 이종 접합 기판 제조 방법 |
CN105489700A (zh) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | 一种带集成二极管的太阳电池的制备方法 |
CN105552140A (zh) * | 2016-01-29 | 2016-05-04 | 扬州乾照光电有限公司 | 高比功率GaAs多结柔性薄膜太阳电池及其制备方法 |
CN106098818A (zh) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法 |
CN206003783U (zh) * | 2016-08-26 | 2017-03-08 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池 |
WO2018195412A1 (en) * | 2017-04-21 | 2018-10-25 | Massachusetts Institute Of Technology | Systems and methods for fabricating photovoltaic devices via remote epitaxy |
KR101957801B1 (ko) * | 2017-11-28 | 2019-07-04 | 한국표준과학연구원 | 플렉서블 이중접합 태양전지 |
CN108258084A (zh) * | 2018-01-26 | 2018-07-06 | 扬州乾照光电有限公司 | 一种柔性薄膜太阳能电池及其制作方法 |
CN108428731A (zh) * | 2018-05-17 | 2018-08-21 | 武汉华星光电半导体显示技术有限公司 | 柔性oled显示面板及柔性oled显示装置 |
CN108615706A (zh) * | 2018-07-04 | 2018-10-02 | 南通沃特光电科技有限公司 | 一种晶圆单片化方法 |
CN109802017A (zh) * | 2019-01-18 | 2019-05-24 | 京东方科技集团股份有限公司 | Led外延片及制作方法、led芯片 |
Non-Patent Citations (1)
Title |
---|
"柔性砷化镓太阳电池";薛超等;《电源技术》;20150731;第139卷(第7期);第1554-1557页 * |
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