TW200810152A - Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component - Google Patents

Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component Download PDF

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Publication number
TW200810152A
TW200810152A TW096119111A TW96119111A TW200810152A TW 200810152 A TW200810152 A TW 200810152A TW 096119111 A TW096119111 A TW 096119111A TW 96119111 A TW96119111 A TW 96119111A TW 200810152 A TW200810152 A TW 200810152A
Authority
TW
Taiwan
Prior art keywords
quantum well
well structure
radiation
wavelength
multiple quantum
Prior art date
Application number
TW096119111A
Other languages
English (en)
Chinese (zh)
Inventor
Peter Stauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200810152A publication Critical patent/TW200810152A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
TW096119111A 2006-06-02 2007-05-29 Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component TW200810152A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006025964A DE102006025964A1 (de) 2006-06-02 2006-06-02 Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement

Publications (1)

Publication Number Publication Date
TW200810152A true TW200810152A (en) 2008-02-16

Family

ID=38325427

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096119111A TW200810152A (en) 2006-06-02 2007-05-29 Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component

Country Status (8)

Country Link
US (1) US20100025652A1 (https=)
EP (1) EP2027607A1 (https=)
JP (1) JP2009539234A (https=)
KR (1) KR20090018688A (https=)
CN (1) CN101461069A (https=)
DE (1) DE102006025964A1 (https=)
TW (1) TW200810152A (https=)
WO (1) WO2007140738A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397192B (zh) * 2007-08-03 2013-05-21 友達光電股份有限公司 白色發光二極體
DE102007058723A1 (de) 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
DE102008050643B4 (de) 2008-10-07 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtmittel
KR101667821B1 (ko) * 2010-07-09 2016-10-19 엘지이노텍 주식회사 발광소자
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
CN107516700A (zh) * 2013-01-25 2017-12-26 新世纪光电股份有限公司 氮化物半导体结构及半导体发光元件
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
KR102142714B1 (ko) * 2014-02-18 2020-08-07 엘지이노텍 주식회사 자외선 발광소자 및 이를 구비하는 발광소자 패키지
TWI738640B (zh) 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
DE102017103856A1 (de) * 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
FR3077680B1 (fr) * 2018-02-07 2020-02-28 Aledia Emetteur, dispositif emetteur et ecran d'affichage et procede de fabrication associes
CN117525237B (zh) * 2024-01-03 2024-03-29 江西兆驰半导体有限公司 绿光Micro-LED外延片及其制备方法、绿光Micro-LED

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GB2212325B (en) * 1987-11-13 1990-10-03 Plessey Co Plc Solid state light source
US5214664A (en) * 1991-10-18 1993-05-25 Xerox Corporation Multiple wavelength semiconductor laser
CN100350641C (zh) * 1995-11-06 2007-11-21 日亚化学工业株式会社 氮化物半导体器件
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
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Also Published As

Publication number Publication date
WO2007140738A1 (de) 2007-12-13
JP2009539234A (ja) 2009-11-12
EP2027607A1 (de) 2009-02-25
CN101461069A (zh) 2009-06-17
DE102006025964A1 (de) 2007-12-06
US20100025652A1 (en) 2010-02-04
KR20090018688A (ko) 2009-02-20

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