JP5289448B2 - 放射放出用の半導体ボディ - Google Patents
放射放出用の半導体ボディ Download PDFInfo
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- JP5289448B2 JP5289448B2 JP2010526149A JP2010526149A JP5289448B2 JP 5289448 B2 JP5289448 B2 JP 5289448B2 JP 2010526149 A JP2010526149 A JP 2010526149A JP 2010526149 A JP2010526149 A JP 2010526149A JP 5289448 B2 JP5289448 B2 JP 5289448B2
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- 230000005855 radiation Effects 0.000 title claims description 153
- 239000004065 semiconductor Substances 0.000 title claims description 123
- 230000004888 barrier function Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 19
- 230000003595 spectral effect Effects 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 19
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- 238000000034 method Methods 0.000 description 8
- -1 nitride compound Chemical class 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
− 活性層において第1の波長(λ1)の好ましくはインコヒーレントな放射を発生させるステップと、
− バリア層構造において、第1の波長(λ1)の放射の少なくとも一部分を吸収するステップと、
− 量子層構造において、第2の波長(λ2)のインコヒーレントな放射を発生させるステップと、
によって行われる。
Claims (13)
- 放射放出用の半導体ボディ(1)であって、
第1の波長(λ1)の放射を発生させる活性層(2)と、
量子層構造(5)とバリア層構造(6)とを有する量子井戸構造(5)を備える再放出層(3)と、
を備え、
前記活性層および前記再放出層が前記半導体ボディの中にモノリシックに集積化され、
前記再放出層が、前記第1の波長の前記放射が前記バリア層構造において吸収されることによって、第2の波長(λ2)のインコヒーレントな放射を発生させるように設けられており、
前記半導体ボディの主放射側に配置された、電気を供給するためのコンタクト(15)と前記再放出層とは、前記再放出層の外側において前記半導体ボディの主放射側から放出される前記第1の波長(λ1)の放射を遮断するように、並んで配置されている、
放射放出用の半導体ボディ。 - 前記コンタクトは、前記再放出層に隣接する、
請求項1に記載の放射放出用の半導体ボディ。 - 前記再放出層(3)の横方向の長さが、前記活性層(2)の対応する横方向の長さよりも小さい、請求項1または2に記載の放射放出用の半導体ボディ。
- 前記第1の波長の前記放射がインコヒーレントである、請求項1または2に記載の放射放出用の半導体ボディ。
- 前記量子層構造(5)が少なくとも1つの量子層(7)を備え、前記バリア層構造(6)が少なくとも1つのバリア層(8)を備える、請求項1または2に記載の放射放出用の半導体ボディ。
- 前記第2の波長(λ2)の前記放射が前記量子層構造において発生する、請求項1〜5のいずれか1項に記載の放射放出用の半導体ボディ。
- 前記活性層(2)がInGaNを含み、前記バリア層構造がGaNを含む、請求項1〜6のいずれか1項に記載の放射放出用の半導体ボディ。
- 前記第1の波長(λ1)が360nm〜400nmである、請求項1〜7のいずれか1項に記載の放射放出用の半導体ボディ。
- 前記第1の波長(λ1)が青色のスペクトル領域内であり、前記放射放出半導体ボディが白色光を放出する、請求項1〜8のいずれか1項に記載の放射放出用の半導体ボディ。
- 前記再放出層(3)が、前記第1の波長(λ1)の前記放射の一部分を前記第2の波長(λ2)の放射に変換し、前記放射放出半導体ボディが、前記第1の波長の放射および前記第2の波長の放射を放出する、請求項1〜9のいずれか1項に記載の放射放出用の半導体ボディ。
- 前記再放出層が、前記第1の波長(λ1)の前記放射を完全に前記第2の波長(λ2)の放射に変換する、請求項1〜10のいずれか1項に記載の放射放出用の半導体ボディ。
- 薄膜半導体ボディである、請求項1〜11のいずれか1項に記載の放射放出用の半導体ボディ。
- 前記第1の波長の前記放射もしくは前記第2の波長の前記放射またはその両方に対して透過性である成長基板(9)を備えている、請求項1〜12のいずれか1項に記載の放射放出用の半導体ボディ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007046499.3 | 2007-09-28 | ||
DE102007046499 | 2007-09-28 | ||
PCT/DE2008/001447 WO2009039815A1 (de) | 2007-09-28 | 2008-08-28 | Strahlungsemittierender halbleiterkörper |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010541217A JP2010541217A (ja) | 2010-12-24 |
JP2010541217A5 JP2010541217A5 (ja) | 2011-07-07 |
JP5289448B2 true JP5289448B2 (ja) | 2013-09-11 |
Family
ID=40104644
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Application Number | Title | Priority Date | Filing Date |
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JP2010526149A Active JP5289448B2 (ja) | 2007-09-28 | 2008-08-28 | 放射放出用の半導体ボディ |
Country Status (7)
Country | Link |
---|---|
US (1) | US8426843B2 (ja) |
EP (1) | EP2193550B1 (ja) |
JP (1) | JP5289448B2 (ja) |
KR (1) | KR101441168B1 (ja) |
CN (1) | CN101809764B (ja) |
DE (1) | DE112008003200A5 (ja) |
WO (1) | WO2009039815A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8455903B2 (en) | 2009-04-20 | 2013-06-04 | 3M Innovative Properties Company | Non-radiatively pumped wavelength converter |
TW201044568A (en) | 2009-04-20 | 2010-12-16 | 3M Innovative Properties Co | Non-radiatively pumped wavelength converter |
DE102009023351A1 (de) * | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
JP6190585B2 (ja) * | 2012-12-12 | 2017-08-30 | スタンレー電気株式会社 | 多重量子井戸半導体発光素子 |
FR3003402B1 (fr) * | 2013-03-14 | 2016-11-04 | Centre Nat Rech Scient | Dispositif monolithique emetteur de lumiere. |
FR3019380B1 (fr) * | 2014-04-01 | 2017-09-01 | Centre Nat Rech Scient | Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication |
DE102014107472A1 (de) | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Beleuchtungsvorrichtung |
FR3066045A1 (fr) | 2017-05-02 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente comprenant des couches de conversion en longueur d'onde |
FR3075468B1 (fr) * | 2017-12-19 | 2019-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif optoelectronique par report d'une structure de conversion sur une structure d'emission |
DE102018101089A1 (de) | 2018-01-18 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
DE102018124473A1 (de) | 2018-10-04 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil, verfahren zur ansteuerung eines optoelektronischen bauteils und beleuchtungsvorrichtung |
JP7414419B2 (ja) * | 2019-07-30 | 2024-01-16 | キヤノン株式会社 | 発光素子及び発光素子の製造方法 |
CN115172544A (zh) | 2022-06-22 | 2022-10-11 | 广东中民工业技术创新研究院有限公司 | 一种基于全氮化物的外延芯片结构和发光器件 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3559446B2 (ja) | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
JP3708730B2 (ja) * | 1998-12-01 | 2005-10-19 | 三菱電線工業株式会社 | 発光装置 |
JP4044261B2 (ja) * | 2000-03-10 | 2008-02-06 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
JP2001352098A (ja) | 2000-06-07 | 2001-12-21 | Sanyo Electric Co Ltd | 半導体発光素子およびその製造方法 |
JP2002222989A (ja) | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
KR100422944B1 (ko) * | 2001-05-31 | 2004-03-12 | 삼성전기주식회사 | 반도체 엘이디(led) 소자 |
JP3791765B2 (ja) * | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP2003078165A (ja) | 2001-08-31 | 2003-03-14 | Japan Fine Ceramics Center | 発光素子 |
DE102004052245A1 (de) * | 2004-06-30 | 2006-02-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip |
JP2006041077A (ja) * | 2004-07-26 | 2006-02-09 | Sumitomo Chemical Co Ltd | 蛍光体 |
TWI267212B (en) * | 2004-12-30 | 2006-11-21 | Ind Tech Res Inst | Quantum dots/quantum well light emitting diode |
JP4653671B2 (ja) * | 2005-03-14 | 2011-03-16 | 株式会社東芝 | 発光装置 |
JP2007235103A (ja) * | 2006-01-31 | 2007-09-13 | Sanyo Electric Co Ltd | 半導体発光装置 |
FR2898434B1 (fr) | 2006-03-13 | 2008-05-23 | Centre Nat Rech Scient | Diode electroluminescente blanche monolithique |
-
2008
- 2008-08-28 DE DE112008003200T patent/DE112008003200A5/de not_active Withdrawn
- 2008-08-28 EP EP08801254.7A patent/EP2193550B1/de active Active
- 2008-08-28 JP JP2010526149A patent/JP5289448B2/ja active Active
- 2008-08-28 KR KR1020107005552A patent/KR101441168B1/ko active IP Right Grant
- 2008-08-28 US US12/680,620 patent/US8426843B2/en active Active
- 2008-08-28 WO PCT/DE2008/001447 patent/WO2009039815A1/de active Application Filing
- 2008-08-28 CN CN2008801088756A patent/CN101809764B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP2193550B1 (de) | 2017-03-08 |
US8426843B2 (en) | 2013-04-23 |
KR20100059854A (ko) | 2010-06-04 |
EP2193550A1 (de) | 2010-06-09 |
US20100294957A1 (en) | 2010-11-25 |
KR101441168B1 (ko) | 2014-09-17 |
CN101809764B (zh) | 2012-05-23 |
CN101809764A (zh) | 2010-08-18 |
JP2010541217A (ja) | 2010-12-24 |
DE112008003200A5 (de) | 2010-09-16 |
WO2009039815A1 (de) | 2009-04-02 |
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