KR20090018688A - 다중 양자 우물 구조, 복사 방출 반도체 몸체 및 복사 방출소자 - Google Patents

다중 양자 우물 구조, 복사 방출 반도체 몸체 및 복사 방출소자 Download PDF

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Publication number
KR20090018688A
KR20090018688A KR1020087032251A KR20087032251A KR20090018688A KR 20090018688 A KR20090018688 A KR 20090018688A KR 1020087032251 A KR1020087032251 A KR 1020087032251A KR 20087032251 A KR20087032251 A KR 20087032251A KR 20090018688 A KR20090018688 A KR 20090018688A
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KR
South Korea
Prior art keywords
quantum well
well structure
wavelength
radiation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020087032251A
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English (en)
Korean (ko)
Inventor
피터 스타우스
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20090018688A publication Critical patent/KR20090018688A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
KR1020087032251A 2006-06-02 2007-05-04 다중 양자 우물 구조, 복사 방출 반도체 몸체 및 복사 방출소자 Ceased KR20090018688A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006025964.5 2006-06-02
DE102006025964A DE102006025964A1 (de) 2006-06-02 2006-06-02 Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement

Publications (1)

Publication Number Publication Date
KR20090018688A true KR20090018688A (ko) 2009-02-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087032251A Ceased KR20090018688A (ko) 2006-06-02 2007-05-04 다중 양자 우물 구조, 복사 방출 반도체 몸체 및 복사 방출소자

Country Status (8)

Country Link
US (1) US20100025652A1 (https=)
EP (1) EP2027607A1 (https=)
JP (1) JP2009539234A (https=)
KR (1) KR20090018688A (https=)
CN (1) CN101461069A (https=)
DE (1) DE102006025964A1 (https=)
TW (1) TW200810152A (https=)
WO (1) WO2007140738A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120005757A (ko) * 2010-07-09 2012-01-17 엘지이노텍 주식회사 발광소자
KR20150097102A (ko) * 2014-02-18 2015-08-26 엘지이노텍 주식회사 자외선 발광소자 및 이를 구비하는 발광소자 패키지

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TWI397192B (zh) * 2007-08-03 2013-05-21 友達光電股份有限公司 白色發光二極體
DE102007058723A1 (de) 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
DE102008050643B4 (de) 2008-10-07 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtmittel
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
CN107516700A (zh) * 2013-01-25 2017-12-26 新世纪光电股份有限公司 氮化物半导体结构及半导体发光元件
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
TWI738640B (zh) 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
DE102017103856A1 (de) * 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
FR3077680B1 (fr) * 2018-02-07 2020-02-28 Aledia Emetteur, dispositif emetteur et ecran d'affichage et procede de fabrication associes
CN117525237B (zh) * 2024-01-03 2024-03-29 江西兆驰半导体有限公司 绿光Micro-LED外延片及其制备方法、绿光Micro-LED

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GB2212325B (en) * 1987-11-13 1990-10-03 Plessey Co Plc Solid state light source
US5214664A (en) * 1991-10-18 1993-05-25 Xerox Corporation Multiple wavelength semiconductor laser
CN100350641C (zh) * 1995-11-06 2007-11-21 日亚化学工业株式会社 氮化物半导体器件
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US6608330B1 (en) * 1998-09-21 2003-08-19 Nichia Corporation Light emitting device
JP3454200B2 (ja) * 1998-09-21 2003-10-06 日亜化学工業株式会社 発光素子
JP2000286448A (ja) * 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
JP4116260B2 (ja) * 2001-02-23 2008-07-09 株式会社東芝 半導体発光装置
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
TW546852B (en) * 2002-04-15 2003-08-11 Epistar Corp Mixed-light type LED and the manufacturing method thereof
JP2004128444A (ja) * 2002-07-31 2004-04-22 Shin Etsu Handotai Co Ltd 発光素子及びそれを用いた照明装置
KR100534737B1 (ko) * 2003-10-24 2005-12-07 현대자동차주식회사 디젤 엔진의 입자상 물질 저감 시스템 및 저감 방법
US7323721B2 (en) * 2004-09-09 2008-01-29 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED
KR100664985B1 (ko) * 2004-10-26 2007-01-09 삼성전기주식회사 질화물계 반도체 소자

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120005757A (ko) * 2010-07-09 2012-01-17 엘지이노텍 주식회사 발광소자
KR20150097102A (ko) * 2014-02-18 2015-08-26 엘지이노텍 주식회사 자외선 발광소자 및 이를 구비하는 발광소자 패키지

Also Published As

Publication number Publication date
WO2007140738A1 (de) 2007-12-13
JP2009539234A (ja) 2009-11-12
EP2027607A1 (de) 2009-02-25
CN101461069A (zh) 2009-06-17
DE102006025964A1 (de) 2007-12-06
TW200810152A (en) 2008-02-16
US20100025652A1 (en) 2010-02-04

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