DE102006025964A1 - Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement - Google Patents

Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement Download PDF

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Publication number
DE102006025964A1
DE102006025964A1 DE102006025964A DE102006025964A DE102006025964A1 DE 102006025964 A1 DE102006025964 A1 DE 102006025964A1 DE 102006025964 A DE102006025964 A DE 102006025964A DE 102006025964 A DE102006025964 A DE 102006025964A DE 102006025964 A1 DE102006025964 A1 DE 102006025964A1
Authority
DE
Germany
Prior art keywords
quantum well
well structure
radiation
wavelength
multiple quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006025964A
Other languages
German (de)
English (en)
Inventor
Peter Dr. Stauss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102006025964A priority Critical patent/DE102006025964A1/de
Priority to JP2009512404A priority patent/JP2009539234A/ja
Priority to KR1020087032251A priority patent/KR20090018688A/ko
Priority to CNA2007800204115A priority patent/CN101461069A/zh
Priority to EP07722361A priority patent/EP2027607A1/de
Priority to PCT/DE2007/000805 priority patent/WO2007140738A1/de
Priority to US12/303,249 priority patent/US20100025652A1/en
Priority to TW096119111A priority patent/TW200810152A/zh
Publication of DE102006025964A1 publication Critical patent/DE102006025964A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
DE102006025964A 2006-06-02 2006-06-02 Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement Withdrawn DE102006025964A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102006025964A DE102006025964A1 (de) 2006-06-02 2006-06-02 Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement
JP2009512404A JP2009539234A (ja) 2006-06-02 2007-05-04 多重量子井戸構造体、発光半導体ボディ、および発光構成素子
KR1020087032251A KR20090018688A (ko) 2006-06-02 2007-05-04 다중 양자 우물 구조, 복사 방출 반도체 몸체 및 복사 방출소자
CNA2007800204115A CN101461069A (zh) 2006-06-02 2007-05-04 多量子阱结构、发射辐射的半导体本体和发射辐射的器件
EP07722361A EP2027607A1 (de) 2006-06-02 2007-05-04 Mehrfachquantentopfstruktur, strahlungsemittierender halbleiterkörper und strahlungsemittierendes bauelement
PCT/DE2007/000805 WO2007140738A1 (de) 2006-06-02 2007-05-04 Mehrfachquantentopfstruktur, strahlungsemittierender halbleiterkörper und strahlungsemittierendes bauelement
US12/303,249 US20100025652A1 (en) 2006-06-02 2007-05-04 Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component
TW096119111A TW200810152A (en) 2006-06-02 2007-05-29 Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006025964A DE102006025964A1 (de) 2006-06-02 2006-06-02 Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement

Publications (1)

Publication Number Publication Date
DE102006025964A1 true DE102006025964A1 (de) 2007-12-06

Family

ID=38325427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006025964A Withdrawn DE102006025964A1 (de) 2006-06-02 2006-06-02 Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement

Country Status (8)

Country Link
US (1) US20100025652A1 (https=)
EP (1) EP2027607A1 (https=)
JP (1) JP2009539234A (https=)
KR (1) KR20090018688A (https=)
CN (1) CN101461069A (https=)
DE (1) DE102006025964A1 (https=)
TW (1) TW200810152A (https=)
WO (1) WO2007140738A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007058723A1 (de) * 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
US9553231B2 (en) 2013-04-29 2017-01-24 Osram Opto Semiconductors Gmbh Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397192B (zh) * 2007-08-03 2013-05-21 友達光電股份有限公司 白色發光二極體
DE102008050643B4 (de) 2008-10-07 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtmittel
KR101667821B1 (ko) * 2010-07-09 2016-10-19 엘지이노텍 주식회사 발광소자
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
CN107516700A (zh) * 2013-01-25 2017-12-26 新世纪光电股份有限公司 氮化物半导体结构及半导体发光元件
KR102142714B1 (ko) * 2014-02-18 2020-08-07 엘지이노텍 주식회사 자외선 발광소자 및 이를 구비하는 발광소자 패키지
TWI738640B (zh) 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
DE102017103856A1 (de) * 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
FR3077680B1 (fr) * 2018-02-07 2020-02-28 Aledia Emetteur, dispositif emetteur et ecran d'affichage et procede de fabrication associes
CN117525237B (zh) * 2024-01-03 2024-03-29 江西兆驰半导体有限公司 绿光Micro-LED外延片及其制备方法、绿光Micro-LED

Citations (7)

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Publication number Priority date Publication date Assignee Title
GB2212325A (en) * 1987-11-13 1989-07-19 Plessey Co Plc Solid state light source
US5214664A (en) * 1991-10-18 1993-05-25 Xerox Corporation Multiple wavelength semiconductor laser
JPH1022525A (ja) * 1996-06-28 1998-01-23 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
US6590233B2 (en) * 2001-02-23 2003-07-08 Kabushiki Kasiha Toshiba Semiconductor light emitting device
US20040090779A1 (en) * 2002-04-15 2004-05-13 Chen Ou Light mixing led and manufacturing method thereof
US20050086932A1 (en) * 2003-10-24 2005-04-28 Cheong Jae H. Diesel particulate matter reduction system and a method thereof
US20060049415A1 (en) * 2004-09-09 2006-03-09 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED

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Publication number Priority date Publication date Assignee Title
CN100350641C (zh) * 1995-11-06 2007-11-21 日亚化学工业株式会社 氮化物半导体器件
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US6608330B1 (en) * 1998-09-21 2003-08-19 Nichia Corporation Light emitting device
JP3454200B2 (ja) * 1998-09-21 2003-10-06 日亜化学工業株式会社 発光素子
JP2000286448A (ja) * 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
JP2004128444A (ja) * 2002-07-31 2004-04-22 Shin Etsu Handotai Co Ltd 発光素子及びそれを用いた照明装置
KR100664985B1 (ko) * 2004-10-26 2007-01-09 삼성전기주식회사 질화물계 반도체 소자

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2212325A (en) * 1987-11-13 1989-07-19 Plessey Co Plc Solid state light source
US5214664A (en) * 1991-10-18 1993-05-25 Xerox Corporation Multiple wavelength semiconductor laser
JPH1022525A (ja) * 1996-06-28 1998-01-23 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
US6590233B2 (en) * 2001-02-23 2003-07-08 Kabushiki Kasiha Toshiba Semiconductor light emitting device
US20040090779A1 (en) * 2002-04-15 2004-05-13 Chen Ou Light mixing led and manufacturing method thereof
US20050086932A1 (en) * 2003-10-24 2005-04-28 Cheong Jae H. Diesel particulate matter reduction system and a method thereof
US20060049415A1 (en) * 2004-09-09 2006-03-09 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007058723A1 (de) * 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
WO2009033448A3 (de) * 2007-09-10 2009-07-09 Osram Opto Semiconductors Gmbh Lichtemittierende struktur
US8390004B2 (en) 2007-09-10 2013-03-05 Osram Opto Semiconductors Gmbh Light-emitting structure
US9553231B2 (en) 2013-04-29 2017-01-24 Osram Opto Semiconductors Gmbh Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip

Also Published As

Publication number Publication date
WO2007140738A1 (de) 2007-12-13
JP2009539234A (ja) 2009-11-12
EP2027607A1 (de) 2009-02-25
CN101461069A (zh) 2009-06-17
TW200810152A (en) 2008-02-16
US20100025652A1 (en) 2010-02-04
KR20090018688A (ko) 2009-02-20

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R005 Application deemed withdrawn due to failure to request examination

Effective date: 20130604