TW200802562A - Liquid processing apparatus and liquid processing method - Google Patents

Liquid processing apparatus and liquid processing method

Info

Publication number
TW200802562A
TW200802562A TW096110637A TW96110637A TW200802562A TW 200802562 A TW200802562 A TW 200802562A TW 096110637 A TW096110637 A TW 096110637A TW 96110637 A TW96110637 A TW 96110637A TW 200802562 A TW200802562 A TW 200802562A
Authority
TW
Taiwan
Prior art keywords
liquid
substrate
liquid processing
film
delivery nozzle
Prior art date
Application number
TW096110637A
Other languages
English (en)
Chinese (zh)
Other versions
TWI362695B (enExample
Inventor
Hiromitsu Nanba
Masahiro Yoshida
Yuji Murakami
Hiroshi Nagayasu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200802562A publication Critical patent/TW200802562A/zh
Application granted granted Critical
Publication of TWI362695B publication Critical patent/TWI362695B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
TW096110637A 2006-03-28 2007-03-27 Liquid processing apparatus and liquid processing method TW200802562A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006089285A JP4708243B2 (ja) 2006-03-28 2006-03-28 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体

Publications (2)

Publication Number Publication Date
TW200802562A true TW200802562A (en) 2008-01-01
TWI362695B TWI362695B (enExample) 2012-04-21

Family

ID=38255145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110637A TW200802562A (en) 2006-03-28 2007-03-27 Liquid processing apparatus and liquid processing method

Country Status (8)

Country Link
US (1) US8043467B2 (enExample)
EP (1) EP1840942B1 (enExample)
JP (1) JP4708243B2 (enExample)
KR (1) KR101098123B1 (enExample)
AT (1) ATE466376T1 (enExample)
DE (1) DE602007006089D1 (enExample)
SG (1) SG136093A1 (enExample)
TW (1) TW200802562A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420112A (zh) * 2010-09-28 2012-04-18 大日本网屏制造株式会社 基板处理方法及基板处理装置
CN107818927A (zh) * 2016-09-13 2018-03-20 东京毅力科创株式会社 基板处理装置和基板处理方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080082010A (ko) * 2006-01-31 2008-09-10 가부시키가이샤 섬코 웨이퍼의 매엽식 식각 방법
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
JP2009105353A (ja) * 2007-10-26 2009-05-14 Renesas Technology Corp 半導体装置の製造方法
JP5026356B2 (ja) * 2008-06-26 2012-09-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP5693439B2 (ja) * 2011-12-16 2015-04-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR102023623B1 (ko) * 2012-07-03 2019-09-23 삼성전자 주식회사 반도체 소자 형성 방법
JP5835188B2 (ja) * 2012-11-06 2015-12-24 東京エレクトロン株式会社 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体
US20140261572A1 (en) * 2013-03-15 2014-09-18 Dainippon Screen Mfg.Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP6106519B2 (ja) * 2013-05-09 2017-04-05 東京エレクトロン株式会社 基板処理方法、プログラム、制御装置、成膜装置及び基板処理システム
US9079210B2 (en) * 2013-07-22 2015-07-14 Infineon Technologies Ag Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium
KR102121238B1 (ko) * 2013-11-25 2020-06-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6064875B2 (ja) * 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP6163434B2 (ja) 2014-01-16 2017-07-12 株式会社東芝 薬液処理装置及び薬液処理方法
KR20160045299A (ko) 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
KR102276869B1 (ko) * 2016-06-30 2021-07-14 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마 자동화된 레시피 생성
TW201828356A (zh) * 2016-10-26 2018-08-01 日商東京威力科創股份有限公司 液體處理方法及液體處理裝置
JP6923344B2 (ja) 2017-04-13 2021-08-18 株式会社Ｓｃｒｅｅｎホールディングス 周縁処理装置および周縁処理方法
CN112514035B (zh) * 2018-07-26 2024-07-05 东京毅力科创株式会社 基板处理系统和基板处理方法
JP7141892B2 (ja) * 2018-09-03 2022-09-26 株式会社プレテック エッチング装置及びエッチング方法
JP7037459B2 (ja) * 2018-09-10 2022-03-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR20200075531A (ko) * 2018-12-18 2020-06-26 삼성전자주식회사 기판 처리 장치
CN112439582A (zh) * 2019-08-30 2021-03-05 长鑫存储技术有限公司 喷淋装置、半导体处理设备以及喷淋反应物的方法
US12387939B2 (en) * 2019-12-16 2025-08-12 Tokyo Electron Limited Substrate processing method
TW202147481A (zh) * 2020-01-23 2021-12-16 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及藥液
JP7453020B2 (ja) * 2020-03-06 2024-03-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7486372B2 (ja) * 2020-07-29 2024-05-17 東京エレクトロン株式会社 基板処理装置、及び基板処理方法
JP7505439B2 (ja) * 2021-04-12 2024-06-25 三菱電機株式会社 半導体製造装置および半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5499733A (en) 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
JP3194037B2 (ja) * 1996-09-24 2001-07-30 東京エレクトロン株式会社 枚葉回転処理方法及びその装置
TW346649B (en) 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP2001319919A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法及び処理装置
JP4083016B2 (ja) * 2001-02-07 2008-04-30 東京エレクトロン株式会社 無電解メッキ処理方法および無電解メッキ処理装置
US6884294B2 (en) * 2001-04-16 2005-04-26 Tokyo Electron Limited Coating film forming method and apparatus
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
JP2004006672A (ja) * 2002-04-19 2004-01-08 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420112A (zh) * 2010-09-28 2012-04-18 大日本网屏制造株式会社 基板处理方法及基板处理装置
US8815111B2 (en) 2010-09-28 2014-08-26 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
CN102420112B (zh) * 2010-09-28 2015-05-27 斯克林集团公司 基板处理方法及基板处理装置
US10332758B2 (en) 2010-09-28 2019-06-25 SCREEN Holdings Co., Ltd. Substrate treatment apparatus
CN107818927A (zh) * 2016-09-13 2018-03-20 东京毅力科创株式会社 基板处理装置和基板处理方法
CN107818927B (zh) * 2016-09-13 2023-04-14 东京毅力科创株式会社 基板处理装置和基板处理方法

Also Published As

Publication number Publication date
EP1840942A2 (en) 2007-10-03
ATE466376T1 (de) 2010-05-15
US20070231483A1 (en) 2007-10-04
DE602007006089D1 (de) 2010-06-10
TWI362695B (enExample) 2012-04-21
KR101098123B1 (ko) 2011-12-26
US8043467B2 (en) 2011-10-25
JP4708243B2 (ja) 2011-06-22
EP1840942A3 (en) 2007-11-28
SG136093A1 (en) 2007-10-29
KR20070097345A (ko) 2007-10-04
EP1840942B1 (en) 2010-04-28
JP2007266302A (ja) 2007-10-11

Similar Documents

Publication Publication Date Title
TW200802562A (en) Liquid processing apparatus and liquid processing method
TW200627537A (en) Substrate processing method and substrate processing apparatus
ATE424038T1 (de) Flüssigkeitsbearbeitungsvorrichtung und - verfahren
MY160656A (en) Nozzle rotation mechanism and application device therewith
TW200738358A (en) Substrate cleaning method and substrate cleaning apparatus
JP2009028892A5 (enExample)
CN103962941A (zh) 基板的背面的研磨方法及基板处理装置
JP2010153807A5 (enExample)
ATE455365T1 (de) Flüssigkeitsverarbeitungsvorrichtung
WO2010039409A3 (en) Apparatus and method for cleaning semiconductor substrate using pressurized fluid
SG157999A1 (en) Protective film forming apparatus and laser processing apparatus
TW200531793A (en) Polishing apparatus and polishing method
JP2002052370A5 (enExample)
TWI547348B (zh) 化學機械研磨裝置與方法
US11318579B2 (en) Multiple nozzle slurry dispense scheme
CN110624740B (zh) 一种方便角度调节的喷涂用喷枪
JP2004103825A (ja) 半導体ウエハエッジ研磨装置及び方法
JP2004017265A (ja) 砥石連れ回り空気層遮断装置及び同装置を用いた研削装置
CN101497070A (zh) 手机外壳涂覆装置用治具
TWI322717B (en) Coating device
TW200719978A (en) Discharge nozzle washing apparatus
US20120289131A1 (en) Cmp apparatus and method
JP2012165000A5 (ja) 基板洗浄方法、基板洗浄装置、現像方法、現像装置及び記憶媒体
KR101311922B1 (ko) 글래스 패널 에지 연마장치
CN113319734B (zh) 化学抛光装置及其方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees