ATE466376T1 - Flüssigkeitsverarbeitungsvorrichtung und flüssigkeitsverarbeitungsverfahren - Google Patents

Flüssigkeitsverarbeitungsvorrichtung und flüssigkeitsverarbeitungsverfahren

Info

Publication number
ATE466376T1
ATE466376T1 AT07006250T AT07006250T ATE466376T1 AT E466376 T1 ATE466376 T1 AT E466376T1 AT 07006250 T AT07006250 T AT 07006250T AT 07006250 T AT07006250 T AT 07006250T AT E466376 T1 ATE466376 T1 AT E466376T1
Authority
AT
Austria
Prior art keywords
liquid
substrate
liquid processing
film
delivery nozzle
Prior art date
Application number
AT07006250T
Other languages
English (en)
Inventor
Hiromitsu Nanba
Masahiro Yoshida
Yuji Murakami
Hiroshi Nagayasu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE466376T1 publication Critical patent/ATE466376T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT07006250T 2006-03-28 2007-03-27 Flüssigkeitsverarbeitungsvorrichtung und flüssigkeitsverarbeitungsverfahren ATE466376T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006089285A JP4708243B2 (ja) 2006-03-28 2006-03-28 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体

Publications (1)

Publication Number Publication Date
ATE466376T1 true ATE466376T1 (de) 2010-05-15

Family

ID=38255145

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07006250T ATE466376T1 (de) 2006-03-28 2007-03-27 Flüssigkeitsverarbeitungsvorrichtung und flüssigkeitsverarbeitungsverfahren

Country Status (8)

Country Link
US (1) US8043467B2 (de)
EP (1) EP1840942B1 (de)
JP (1) JP4708243B2 (de)
KR (1) KR101098123B1 (de)
AT (1) ATE466376T1 (de)
DE (1) DE602007006089D1 (de)
SG (1) SG136093A1 (de)
TW (1) TW200802562A (de)

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US8466071B2 (en) * 2006-01-31 2013-06-18 Sumco Corporation Method for etching single wafer
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
JP2009105353A (ja) * 2007-10-26 2009-05-14 Renesas Technology Corp 半導体装置の製造方法
JP5026356B2 (ja) * 2008-06-26 2012-09-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP5615650B2 (ja) * 2010-09-28 2014-10-29 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5693439B2 (ja) * 2011-12-16 2015-04-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR102023623B1 (ko) * 2012-07-03 2019-09-23 삼성전자 주식회사 반도체 소자 형성 방법
JP5835188B2 (ja) * 2012-11-06 2015-12-24 東京エレクトロン株式会社 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体
US20140261572A1 (en) * 2013-03-15 2014-09-18 Dainippon Screen Mfg.Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP6106519B2 (ja) * 2013-05-09 2017-04-05 東京エレクトロン株式会社 基板処理方法、プログラム、制御装置、成膜装置及び基板処理システム
US9079210B2 (en) * 2013-07-22 2015-07-14 Infineon Technologies Ag Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium
KR102121238B1 (ko) * 2013-11-25 2020-06-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6064875B2 (ja) * 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP6163434B2 (ja) 2014-01-16 2017-07-12 株式会社東芝 薬液処理装置及び薬液処理方法
KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
CN109314050B (zh) * 2016-06-30 2023-05-26 应用材料公司 化学机械研磨的自动配方的产生
JP6815799B2 (ja) * 2016-09-13 2021-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TW201828356A (zh) * 2016-10-26 2018-08-01 日商東京威力科創股份有限公司 液體處理方法及液體處理裝置
JP6923344B2 (ja) * 2017-04-13 2021-08-18 株式会社Ｓｃｒｅｅｎホールディングス 周縁処理装置および周縁処理方法
JP7018506B2 (ja) * 2018-07-26 2022-02-10 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP7141892B2 (ja) * 2018-09-03 2022-09-26 株式会社プレテック エッチング装置及びエッチング方法
JP7037459B2 (ja) * 2018-09-10 2022-03-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR20200075531A (ko) * 2018-12-18 2020-06-26 삼성전자주식회사 기판 처리 장치
CN112439582A (zh) * 2019-08-30 2021-03-05 长鑫存储技术有限公司 喷淋装置、半导体处理设备以及喷淋反应物的方法
US12387939B2 (en) * 2019-12-16 2025-08-12 Tokyo Electron Limited Substrate processing method
CN113161259B (zh) * 2020-01-23 2025-08-12 东京毅力科创株式会社 基板处理装置、基板处理方法和化学溶液
JP7453020B2 (ja) * 2020-03-06 2024-03-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7486372B2 (ja) * 2020-07-29 2024-05-17 東京エレクトロン株式会社 基板処理装置、及び基板処理方法
JP7505439B2 (ja) * 2021-04-12 2024-06-25 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
JP2024043611A (ja) * 2022-09-20 2024-04-02 東京エレクトロン株式会社 エッチング制御システム、及びエッチング制御方法

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US5499733A (en) 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
JP3194037B2 (ja) * 1996-09-24 2001-07-30 東京エレクトロン株式会社 枚葉回転処理方法及びその装置
TW346649B (en) 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP2001319919A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法及び処理装置
EP1371755B1 (de) * 2001-02-07 2007-02-28 Tokyo Electron Limited Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung
US6884294B2 (en) * 2001-04-16 2005-04-26 Tokyo Electron Limited Coating film forming method and apparatus
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
JP2004006672A (ja) 2002-04-19 2004-01-08 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体

Also Published As

Publication number Publication date
JP2007266302A (ja) 2007-10-11
EP1840942B1 (de) 2010-04-28
JP4708243B2 (ja) 2011-06-22
US8043467B2 (en) 2011-10-25
SG136093A1 (en) 2007-10-29
KR20070097345A (ko) 2007-10-04
EP1840942A2 (de) 2007-10-03
KR101098123B1 (ko) 2011-12-26
TWI362695B (de) 2012-04-21
US20070231483A1 (en) 2007-10-04
EP1840942A3 (de) 2007-11-28
TW200802562A (en) 2008-01-01
DE602007006089D1 (de) 2010-06-10

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