SG136093A1 - Liquid processing apparatus and liquid processing method - Google Patents
Liquid processing apparatus and liquid processing methodInfo
- Publication number
- SG136093A1 SG136093A1 SG200702123-1A SG2007021231A SG136093A1 SG 136093 A1 SG136093 A1 SG 136093A1 SG 2007021231 A SG2007021231 A SG 2007021231A SG 136093 A1 SG136093 A1 SG 136093A1
- Authority
- SG
- Singapore
- Prior art keywords
- liquid
- substrate
- liquid processing
- film
- delivery nozzle
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title abstract 13
- 238000003672 processing method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 238000000034 method Methods 0.000 abstract 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006089285A JP4708243B2 (ja) | 2006-03-28 | 2006-03-28 | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG136093A1 true SG136093A1 (en) | 2007-10-29 |
Family
ID=38255145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200702123-1A SG136093A1 (en) | 2006-03-28 | 2007-03-27 | Liquid processing apparatus and liquid processing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US8043467B2 (de) |
EP (1) | EP1840942B1 (de) |
JP (1) | JP4708243B2 (de) |
KR (1) | KR101098123B1 (de) |
AT (1) | ATE466376T1 (de) |
DE (1) | DE602007006089D1 (de) |
SG (1) | SG136093A1 (de) |
TW (1) | TW200802562A (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY148726A (en) * | 2006-01-31 | 2013-05-31 | Sumco Corp | Method for etching single wafer |
JP4708243B2 (ja) * | 2006-03-28 | 2011-06-22 | 東京エレクトロン株式会社 | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
JP2009105353A (ja) * | 2007-10-26 | 2009-05-14 | Renesas Technology Corp | 半導体装置の製造方法 |
JP5026356B2 (ja) * | 2008-06-26 | 2012-09-12 | Sumco Techxiv株式会社 | 拡散ウェーハの製造方法 |
JP5615650B2 (ja) * | 2010-09-28 | 2014-10-29 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP5693439B2 (ja) * | 2011-12-16 | 2015-04-01 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
KR102023623B1 (ko) * | 2012-07-03 | 2019-09-23 | 삼성전자 주식회사 | 반도체 소자 형성 방법 |
JP5835188B2 (ja) * | 2012-11-06 | 2015-12-24 | 東京エレクトロン株式会社 | 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体 |
US20140261572A1 (en) * | 2013-03-15 | 2014-09-18 | Dainippon Screen Mfg.Co., Ltd. | Substrate treatment apparatus and substrate treatment method |
JP6106519B2 (ja) * | 2013-05-09 | 2017-04-05 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、制御装置、成膜装置及び基板処理システム |
US9079210B2 (en) * | 2013-07-22 | 2015-07-14 | Infineon Technologies Ag | Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium |
KR102121238B1 (ko) * | 2013-11-25 | 2020-06-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP6064875B2 (ja) * | 2013-11-25 | 2017-01-25 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
JP6163434B2 (ja) | 2014-01-16 | 2017-07-12 | 株式会社東芝 | 薬液処理装置及び薬液処理方法 |
KR20160045299A (ko) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법 |
JP7160692B2 (ja) * | 2016-06-30 | 2022-10-25 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨自動レシピ生成 |
JP6815799B2 (ja) * | 2016-09-13 | 2021-01-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
TW201828356A (zh) * | 2016-10-26 | 2018-08-01 | 日商東京威力科創股份有限公司 | 液體處理方法及液體處理裝置 |
JP6923344B2 (ja) * | 2017-04-13 | 2021-08-18 | 株式会社Screenホールディングス | 周縁処理装置および周縁処理方法 |
KR102690417B1 (ko) * | 2018-07-26 | 2024-07-31 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 및 기판 처리 방법 |
JP7141892B2 (ja) * | 2018-09-03 | 2022-09-26 | 株式会社プレテック | エッチング装置及びエッチング方法 |
JP7037459B2 (ja) * | 2018-09-10 | 2022-03-16 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
KR20200075531A (ko) * | 2018-12-18 | 2020-06-26 | 삼성전자주식회사 | 기판 처리 장치 |
CN112439582A (zh) * | 2019-08-30 | 2021-03-05 | 长鑫存储技术有限公司 | 喷淋装置、半导体处理设备以及喷淋反应物的方法 |
WO2021124900A1 (ja) * | 2019-12-16 | 2021-06-24 | 東京エレクトロン株式会社 | 基板処理方法 |
TW202147481A (zh) * | 2020-01-23 | 2021-12-16 | 日商東京威力科創股份有限公司 | 基板處理裝置、基板處理方法及藥液 |
JP7453020B2 (ja) * | 2020-03-06 | 2024-03-19 | 株式会社Screenホールディングス | 基板処理方法 |
JP7486372B2 (ja) * | 2020-07-29 | 2024-05-17 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
JP7505439B2 (ja) * | 2021-04-12 | 2024-06-25 | 三菱電機株式会社 | 半導体製造装置および半導体装置の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5499733A (en) * | 1992-09-17 | 1996-03-19 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
TW346649B (en) * | 1996-09-24 | 1998-12-01 | Tokyo Electron Co Ltd | Method for wet etching a film |
JP3194037B2 (ja) * | 1996-09-24 | 2001-07-30 | 東京エレクトロン株式会社 | 枚葉回転処理方法及びその装置 |
JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
JP2001319919A (ja) * | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | 半導体装置の製造方法及び処理装置 |
ATE355399T1 (de) * | 2001-02-07 | 2006-03-15 | Tokyo Electron Ltd | Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung |
US6884294B2 (en) * | 2001-04-16 | 2005-04-26 | Tokyo Electron Limited | Coating film forming method and apparatus |
US6770565B2 (en) * | 2002-01-08 | 2004-08-03 | Applied Materials Inc. | System for planarizing metal conductive layers |
JP2004006672A (ja) | 2002-04-19 | 2004-01-08 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP4607755B2 (ja) * | 2005-12-19 | 2011-01-05 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体 |
JP4708243B2 (ja) * | 2006-03-28 | 2011-06-22 | 東京エレクトロン株式会社 | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
-
2006
- 2006-03-28 JP JP2006089285A patent/JP4708243B2/ja active Active
-
2007
- 2007-03-27 DE DE602007006089T patent/DE602007006089D1/de active Active
- 2007-03-27 AT AT07006250T patent/ATE466376T1/de active
- 2007-03-27 SG SG200702123-1A patent/SG136093A1/en unknown
- 2007-03-27 EP EP07006250A patent/EP1840942B1/de not_active Not-in-force
- 2007-03-27 US US11/727,656 patent/US8043467B2/en not_active Expired - Fee Related
- 2007-03-27 KR KR1020070029758A patent/KR101098123B1/ko active IP Right Grant
- 2007-03-27 TW TW096110637A patent/TW200802562A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20070231483A1 (en) | 2007-10-04 |
ATE466376T1 (de) | 2010-05-15 |
EP1840942A3 (de) | 2007-11-28 |
TWI362695B (de) | 2012-04-21 |
TW200802562A (en) | 2008-01-01 |
EP1840942B1 (de) | 2010-04-28 |
KR101098123B1 (ko) | 2011-12-26 |
EP1840942A2 (de) | 2007-10-03 |
US8043467B2 (en) | 2011-10-25 |
JP2007266302A (ja) | 2007-10-11 |
KR20070097345A (ko) | 2007-10-04 |
JP4708243B2 (ja) | 2011-06-22 |
DE602007006089D1 (de) | 2010-06-10 |
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