ATE355399T1 - Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung - Google Patents
Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidungInfo
- Publication number
- ATE355399T1 ATE355399T1 AT02716431T AT02716431T ATE355399T1 AT E355399 T1 ATE355399 T1 AT E355399T1 AT 02716431 T AT02716431 T AT 02716431T AT 02716431 T AT02716431 T AT 02716431T AT E355399 T1 ATE355399 T1 AT E355399T1
- Authority
- AT
- Austria
- Prior art keywords
- metal deposition
- electroless metal
- solution
- treated
- supplied
- Prior art date
Links
- 238000000454 electroless metal deposition Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 229910021645 metal ion Inorganic materials 0.000 abstract 2
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 229910000365 copper sulfate Inorganic materials 0.000 abstract 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001030824 | 2001-02-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE355399T1 true ATE355399T1 (de) | 2006-03-15 |
Family
ID=18894991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02716431T ATE355399T1 (de) | 2001-02-07 | 2002-01-29 | Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20040062861A1 (de) |
| EP (1) | EP1371755B1 (de) |
| JP (1) | JP4083016B2 (de) |
| KR (1) | KR100507019B1 (de) |
| CN (1) | CN1223705C (de) |
| AT (1) | ATE355399T1 (de) |
| DE (1) | DE60218437D1 (de) |
| WO (1) | WO2002063067A1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4554881B2 (ja) * | 2002-11-08 | 2010-09-29 | 旭化成株式会社 | 有機半導体素子の製造方法 |
| FI20030816A (fi) * | 2003-05-30 | 2004-12-01 | Metso Corp | Menetelmä metallijohtimien valmistamiseksi substraatille |
| JP5008280B2 (ja) * | 2004-11-10 | 2012-08-22 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置および基板処理方法 |
| JP4926433B2 (ja) * | 2004-12-06 | 2012-05-09 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置および基板処理方法 |
| JP4794232B2 (ja) * | 2004-12-06 | 2011-10-19 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置 |
| JP5154007B2 (ja) | 2004-12-06 | 2013-02-27 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置 |
| JP4761907B2 (ja) * | 2005-09-28 | 2011-08-31 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置 |
| JP4708243B2 (ja) * | 2006-03-28 | 2011-06-22 | 東京エレクトロン株式会社 | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
| US20120058362A1 (en) * | 2010-09-08 | 2012-03-08 | Infineon Technologies Ag | Method for depositing metal on a substrate; metal structure and method for plating a metal on a substrate |
| TWI485286B (zh) * | 2011-11-16 | 2015-05-21 | Ebara Corp | Electroless plating and electroless plating |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936541B1 (de) * | 1969-08-15 | 1974-10-01 | ||
| US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
| US5234499A (en) * | 1990-06-26 | 1993-08-10 | Dainippon Screen Mgf. Co., Ltd. | Spin coating apparatus |
| SG93216A1 (en) * | 1993-03-25 | 2002-12-17 | Tokyo Electron Ltd | Method of forming coating film and apparatus therefor |
| EP0770705A1 (de) * | 1995-04-10 | 1997-05-02 | Kao Corporation | Stromloses beschichtungsverfahren und verfahren und vorrichtung zur herstellung von matrizen |
| JPH08319578A (ja) * | 1995-05-24 | 1996-12-03 | Tdk Corp | 湿式法による多層膜の製造方法およびその製造装置 |
| JP3022392B2 (ja) * | 1997-04-04 | 2000-03-21 | スガ試験機株式会社 | イオン交換膜への白金めっき方法 |
| AU8919398A (en) * | 1997-08-25 | 1999-03-16 | Velcro Industries B.V. | Forming mold cavities |
| JPH11140657A (ja) * | 1997-11-12 | 1999-05-25 | Ricoh Co Ltd | 無電解めっき方法 |
| JP3065039B2 (ja) * | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | 成膜方法及び装置 |
| US6984302B2 (en) * | 1998-12-30 | 2006-01-10 | Intel Corporation | Electroplating cell based upon rotational plating solution flow |
| US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
| US6153935A (en) * | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
| US6376013B1 (en) * | 1999-10-06 | 2002-04-23 | Advanced Micro Devices, Inc. | Multiple nozzles for dispensing resist |
| US6403500B1 (en) * | 2001-01-12 | 2002-06-11 | Advanced Micro Devices, Inc. | Cross-shaped resist dispensing system and method |
-
2002
- 2002-01-29 JP JP2002562797A patent/JP4083016B2/ja not_active Expired - Fee Related
- 2002-01-29 US US10/467,270 patent/US20040062861A1/en not_active Abandoned
- 2002-01-29 KR KR10-2003-7010383A patent/KR100507019B1/ko active IP Right Grant
- 2002-01-29 DE DE60218437T patent/DE60218437D1/de not_active Expired - Lifetime
- 2002-01-29 WO PCT/JP2002/000623 patent/WO2002063067A1/ja active IP Right Grant
- 2002-01-29 EP EP02716431A patent/EP1371755B1/de not_active Expired - Lifetime
- 2002-01-29 AT AT02716431T patent/ATE355399T1/de not_active IP Right Cessation
- 2002-01-29 CN CNB028046870A patent/CN1223705C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60218437D1 (de) | 2007-04-12 |
| KR100507019B1 (ko) | 2005-08-09 |
| WO2002063067A1 (fr) | 2002-08-15 |
| JPWO2002063067A1 (ja) | 2004-06-10 |
| US20040062861A1 (en) | 2004-04-01 |
| EP1371755A1 (de) | 2003-12-17 |
| CN1223705C (zh) | 2005-10-19 |
| EP1371755B1 (de) | 2007-02-28 |
| KR20030079985A (ko) | 2003-10-10 |
| CN1491297A (zh) | 2004-04-21 |
| EP1371755A4 (de) | 2005-07-27 |
| JP4083016B2 (ja) | 2008-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |