KR100507019B1 - 무전해 도금 처리 방법 및 무전해 도금 처리 장치 - Google Patents
무전해 도금 처리 방법 및 무전해 도금 처리 장치 Download PDFInfo
- Publication number
- KR100507019B1 KR100507019B1 KR10-2003-7010383A KR20037010383A KR100507019B1 KR 100507019 B1 KR100507019 B1 KR 100507019B1 KR 20037010383 A KR20037010383 A KR 20037010383A KR 100507019 B1 KR100507019 B1 KR 100507019B1
- Authority
- KR
- South Korea
- Prior art keywords
- electroless plating
- supplying
- additive
- wafer
- processing body
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 92
- 238000007772 electroless plating Methods 0.000 title claims description 74
- 239000007788 liquid Substances 0.000 claims abstract description 57
- 239000000654 additive Substances 0.000 claims abstract description 56
- 230000000996 additive effect Effects 0.000 claims abstract description 52
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 40
- 238000007747 plating Methods 0.000 claims abstract description 36
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 15
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 15
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 65
- 238000004140 cleaning Methods 0.000 claims description 64
- 230000007246 mechanism Effects 0.000 claims description 30
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- NNIYFVYSVUWTOA-UHFFFAOYSA-N copper hydrochloride Chemical compound Cl.[Cu] NNIYFVYSVUWTOA-UHFFFAOYSA-N 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 80
- 239000010949 copper Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000005406 washing Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 here Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemically Coating (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
Claims (32)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 처리체의 표면에 대하여 금속 이온을 포함하는 용액을 공급하는 금속 이온 용액 공급 공정과,상기 처리체의 표면에 대하여 제 1 세정액을 공급하는 제 1 세정액 공급 공정과,상기 처리체의 주변부에 대하여 제 2 세정액을 공급하는 제 2 세정액 공급 공정과,상기 처리체의 이면에 대하여 제 3 세정액을 공급하는 제 3 세정액 공급 공정을 구비하는 것을 특징으로 하는상기 처리체의 표면에 도금막을 형성하는 무전해 도금 처리 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 처리체를 유지하는 유지 기구와,상기 처리체의 표면에 금속 이온을 포함하는 용액을 공급하는 금속 이온 용액 공급계와,상기 처리체의 표면에 제 1 세정액을 공급하는 제 1 세정액 공급계와,상기 처리체의 주변부에 제 2 세정액을 공급하는 제 2 세정액 공급계와,상기 처리체의 이면에 제 3 세정액을 공급하는 제 3 세정액 공급계를 구비하는 것을 특징으로 하는상기 처리체의 표면에 도금막을 형성하는 무전해 도금 처리 장치.
- 제 12 항에 있어서,상기 금속 이온 용액 공급 공정은 상기 처리체를 회전시키면서 실행되는 것을 특징으로 하는 무전해 도금 처리 방법.
- 제 12 항에 있어서,상기 금속 이온 용액 공급 공정은 상기 처리체를 진동시키면서 실행되는 것을 특징으로 하는무전해 도금 처리 방법.
- 제 12 항에 있어서,상기 금속 이온 용액 공급 공정은 상기 처리체의 이면에 액체 또는 기체를 공급하면서 실행되는 것을 특징으로 하는무전해 도금 처리 방법.
- 제 12 항에 있어서,상기 금속 이온을 포함하는 용액은 황산동 용액 또는 염산동 용액인 것을 특징으로 하는무전해 도금 처리 방법.
- 제 12 항에 있어서,상기 처리체의 표면에 대하여 첨가제를 공급하는 첨가제 공급 공정을 더 구비하는 것을 특징으로 하는무전해 도금 처리 방법.
- 제 23 항에 있어서,상기 첨가제는 환원제를 포함하는 것을 특징으로 하는무전해 도금 처리 방법.
- 제 23 항에 있어서,상기 첨가제 공급 공정은 상기 처리체를 회전시키면서 실행되는 것을 특징으로 하는무전해 도금 처리 방법.
- 제 23 항에 있어서,상기 첨가제 공급 공정은 상기 처리체를 진동시키면서 실행되는 것을 특징으로 하는무전해 도금 처리 방법.
- 제 23 항에 있어서,상기 첨가제 공급 공정은 상기 처리체의 이면에 액체 또는 기체를 공급하면서 실행되는 것을 특징으로 하는무전해 도금 처리 방법.
- 삭제
- 제 18 항에 있어서,상기 처리체의 표면에 첨가제를 공급하는 첨가제 공급계를 더 구비하는 것을 특징으로 하는무전해 도금 처리 장치.
- 제 18 항에 있어서,상기 처리체의 이면으로의 액체의 회전 주입을 방지하는 회전 주입 방지 기구를 더 구비하는 것을 특징으로 하는무전해 도금 처리 장치.
- 제 18 항에 있어서,상기 처리체를 회전시키는 회전 기구를 더 구비하는 것을 특징으로 하는무전해 도금 처리 장치.
- 제 18 항에 있어서,상기 처리체를 진동시키는 진동 기구를 더 구비하는 것을 특징으로 하는무전해 도금 처리 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001030824 | 2001-02-07 | ||
JPJP-P-2001-00030824 | 2001-02-07 | ||
PCT/JP2002/000623 WO2002063067A1 (fr) | 2001-02-07 | 2002-01-29 | Procede et appareil de depot autocatalytique |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030079985A KR20030079985A (ko) | 2003-10-10 |
KR100507019B1 true KR100507019B1 (ko) | 2005-08-09 |
Family
ID=18894991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-7010383A KR100507019B1 (ko) | 2001-02-07 | 2002-01-29 | 무전해 도금 처리 방법 및 무전해 도금 처리 장치 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040062861A1 (ko) |
EP (1) | EP1371755B1 (ko) |
JP (1) | JP4083016B2 (ko) |
KR (1) | KR100507019B1 (ko) |
CN (1) | CN1223705C (ko) |
AT (1) | ATE355399T1 (ko) |
DE (1) | DE60218437D1 (ko) |
WO (1) | WO2002063067A1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4554881B2 (ja) * | 2002-11-08 | 2010-09-29 | 旭化成株式会社 | 有機半導体素子の製造方法 |
FI20030816A (fi) * | 2003-05-30 | 2004-12-01 | Metso Corp | Menetelmä metallijohtimien valmistamiseksi substraatille |
JP5008280B2 (ja) * | 2004-11-10 | 2012-08-22 | 株式会社Sokudo | 基板処理装置および基板処理方法 |
JP4926433B2 (ja) * | 2004-12-06 | 2012-05-09 | 株式会社Sokudo | 基板処理装置および基板処理方法 |
JP4794232B2 (ja) * | 2004-12-06 | 2011-10-19 | 株式会社Sokudo | 基板処理装置 |
JP5154007B2 (ja) | 2004-12-06 | 2013-02-27 | 株式会社Sokudo | 基板処理装置 |
JP4761907B2 (ja) * | 2005-09-28 | 2011-08-31 | 株式会社Sokudo | 基板処理装置 |
JP4708243B2 (ja) * | 2006-03-28 | 2011-06-22 | 東京エレクトロン株式会社 | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
US20120058362A1 (en) * | 2010-09-08 | 2012-03-08 | Infineon Technologies Ag | Method for depositing metal on a substrate; metal structure and method for plating a metal on a substrate |
TWI485286B (zh) | 2011-11-16 | 2015-05-21 | Ebara Corp | Electroless plating and electroless plating |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS4936541B1 (ko) * | 1969-08-15 | 1974-10-01 | ||
US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
US5234499A (en) * | 1990-06-26 | 1993-08-10 | Dainippon Screen Mgf. Co., Ltd. | Spin coating apparatus |
SG93216A1 (en) * | 1993-03-25 | 2002-12-17 | Tokyo Electron Ltd | Method of forming coating film and apparatus therefor |
WO1996032521A1 (fr) * | 1995-04-10 | 1996-10-17 | Kao Corporation | Procede de metallisation au bain chaud, et procede et equipement de production de matrices |
JPH08319578A (ja) * | 1995-05-24 | 1996-12-03 | Tdk Corp | 湿式法による多層膜の製造方法およびその製造装置 |
JP3022392B2 (ja) * | 1997-04-04 | 2000-03-21 | スガ試験機株式会社 | イオン交換膜への白金めっき方法 |
CN1190301C (zh) * | 1997-08-25 | 2005-02-23 | 维尔克鲁工业公司 | 模腔的成形 |
JPH11140657A (ja) * | 1997-11-12 | 1999-05-25 | Ricoh Co Ltd | 無電解めっき方法 |
JP3065039B2 (ja) * | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | 成膜方法及び装置 |
US6984302B2 (en) * | 1998-12-30 | 2006-01-10 | Intel Corporation | Electroplating cell based upon rotational plating solution flow |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6153935A (en) * | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
US6376013B1 (en) * | 1999-10-06 | 2002-04-23 | Advanced Micro Devices, Inc. | Multiple nozzles for dispensing resist |
US6403500B1 (en) * | 2001-01-12 | 2002-06-11 | Advanced Micro Devices, Inc. | Cross-shaped resist dispensing system and method |
-
2002
- 2002-01-29 EP EP02716431A patent/EP1371755B1/en not_active Expired - Lifetime
- 2002-01-29 US US10/467,270 patent/US20040062861A1/en not_active Abandoned
- 2002-01-29 WO PCT/JP2002/000623 patent/WO2002063067A1/ja active IP Right Grant
- 2002-01-29 DE DE60218437T patent/DE60218437D1/de not_active Expired - Lifetime
- 2002-01-29 JP JP2002562797A patent/JP4083016B2/ja not_active Expired - Fee Related
- 2002-01-29 CN CNB028046870A patent/CN1223705C/zh not_active Expired - Fee Related
- 2002-01-29 AT AT02716431T patent/ATE355399T1/de not_active IP Right Cessation
- 2002-01-29 KR KR10-2003-7010383A patent/KR100507019B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1371755B1 (en) | 2007-02-28 |
CN1223705C (zh) | 2005-10-19 |
EP1371755A1 (en) | 2003-12-17 |
WO2002063067A1 (fr) | 2002-08-15 |
CN1491297A (zh) | 2004-04-21 |
JPWO2002063067A1 (ja) | 2004-06-10 |
DE60218437D1 (de) | 2007-04-12 |
ATE355399T1 (de) | 2006-03-15 |
JP4083016B2 (ja) | 2008-04-30 |
EP1371755A4 (en) | 2005-07-27 |
KR20030079985A (ko) | 2003-10-10 |
US20040062861A1 (en) | 2004-04-01 |
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