TW200741802A - Semiconductor production plant - Google Patents

Semiconductor production plant

Info

Publication number
TW200741802A
TW200741802A TW096104462A TW96104462A TW200741802A TW 200741802 A TW200741802 A TW 200741802A TW 096104462 A TW096104462 A TW 096104462A TW 96104462 A TW96104462 A TW 96104462A TW 200741802 A TW200741802 A TW 200741802A
Authority
TW
Taiwan
Prior art keywords
fluorine gas
semiconductor production
production plant
storing
supplied
Prior art date
Application number
TW096104462A
Other languages
English (en)
Inventor
Jiro Hiraiwa
Osamu Yoshimoto
Hiroshi Hayakawa
Tetsuro Tojo
Tsuneyuki Okabe
Takanobu Asano
Shinichi Wada
Ken Nakao
Hitoshi Kato
Original Assignee
Toyo Tanso Co
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tanso Co, Tokyo Electron Ltd filed Critical Toyo Tanso Co
Publication of TW200741802A publication Critical patent/TW200741802A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17DPIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00Pipe-line systems
    • F17D1/02Pipe-line systems for gases or vapours
    • F17D1/04Pipe-line systems for gases or vapours for distribution of gas
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17CVESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2250/00Accessories; Control means; Indicating, measuring or monitoring of parameters
    • F17C2250/03Control means
    • F17C2250/032Control means using computers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17CVESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2270/00Applications
    • F17C2270/05Applications for industrial use
    • F17C2270/0518Semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Pipeline Systems (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)
TW096104462A 2006-02-07 2007-02-07 Semiconductor production plant TW200741802A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006029299A JP4018726B2 (ja) 2006-02-07 2006-02-07 半導体製造プラント

Publications (1)

Publication Number Publication Date
TW200741802A true TW200741802A (en) 2007-11-01

Family

ID=38345179

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096104462A TW200741802A (en) 2006-02-07 2007-02-07 Semiconductor production plant

Country Status (8)

Country Link
US (1) US8387559B2 (zh)
EP (1) EP2012345A4 (zh)
JP (1) JP4018726B2 (zh)
KR (1) KR101230207B1 (zh)
CN (1) CN101379592B (zh)
CA (1) CA2641563A1 (zh)
TW (1) TW200741802A (zh)
WO (1) WO2007091583A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4018726B2 (ja) * 2006-02-07 2007-12-05 東洋炭素株式会社 半導体製造プラント
JP5438439B2 (ja) * 2009-09-04 2014-03-12 東洋炭素株式会社 気体供給システム
KR200469867Y1 (ko) * 2013-03-05 2013-11-08 (주)엑셀시오 반도체 및 디스플레이 제조 설비용 매뉴얼 밸브의 제어 및 모니터링 장치
WO2015162868A1 (ja) * 2014-04-24 2015-10-29 東洋炭素株式会社 反応装置
CN106796424B (zh) * 2014-10-10 2019-05-21 朗姆研究公司 半导体制造设备的移动连通性和控制

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6272117A (ja) * 1985-09-26 1987-04-02 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
JPH04352326A (ja) * 1991-05-29 1992-12-07 Tokyo Electron Ltd 微細加工装置
JPH09306825A (ja) 1996-05-10 1997-11-28 Canon Inc 半導体製造装置
GB9904925D0 (en) 1999-03-04 1999-04-28 Surface Tech Sys Ltd Gas delivery system
EP1283280A4 (en) * 2000-04-07 2004-09-15 Toyo Tanso Co APPARATUS FOR THE PRODUCTION OF GAS FLUORINE
JP3645495B2 (ja) * 2000-04-07 2005-05-11 東洋炭素株式会社 フッ素ガス発生装置
US20030121796A1 (en) 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
US20040151656A1 (en) 2001-11-26 2004-08-05 Siegele Stephen H. Modular molecular halogen gas generation system
JP3725822B2 (ja) 2001-12-27 2005-12-14 レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード フッ素ガス生成及び供給装置
JP2003257870A (ja) 2002-02-28 2003-09-12 Nippon Sanso Corp 半導体装置の製造システム及びガス供給方法
JP4294910B2 (ja) * 2002-03-27 2009-07-15 株式会社東芝 半導体デバイス製造プラントにおける物質供給システム
KR100905710B1 (ko) 2002-09-19 2009-07-01 삼성전자주식회사 반도체 제조 공정으로 가스를 공급하기 위한 가스 운반시스템
JP3617835B2 (ja) 2002-09-20 2005-02-09 東洋炭素株式会社 フッ素ガス発生装置
JP3527735B1 (ja) 2002-11-20 2004-05-17 東洋炭素株式会社 フッ素ガス発生装置
JP2005024068A (ja) * 2003-07-02 2005-01-27 Toyo Tanso Kk ハロゲンガス又はハロゲン含有ガスの供給装置
JP2005052724A (ja) * 2003-08-04 2005-03-03 Hideki Yamamoto フッ素系ガスの無害化処理方法および無害化処理装置
JP4018726B2 (ja) * 2006-02-07 2007-12-05 東洋炭素株式会社 半導体製造プラント
JP2009024222A (ja) * 2007-07-20 2009-02-05 Toyo Tanso Kk フッ素系ガス及び水素ガス発生装置
JP2009213947A (ja) * 2008-03-06 2009-09-24 Toyo Tanso Kk 表面処理装置
JP5679139B2 (ja) * 2008-03-06 2015-03-04 東洋炭素株式会社 表面処理装置
JP5238299B2 (ja) * 2008-03-10 2013-07-17 東洋炭素株式会社 フッ素ガス発生装置

Also Published As

Publication number Publication date
US20100064969A1 (en) 2010-03-18
WO2007091583A1 (ja) 2007-08-16
US8387559B2 (en) 2013-03-05
EP2012345A1 (en) 2009-01-07
EP2012345A4 (en) 2012-04-18
JP4018726B2 (ja) 2007-12-05
KR20080093150A (ko) 2008-10-20
CN101379592B (zh) 2011-11-16
CA2641563A1 (en) 2007-08-16
CN101379592A (zh) 2009-03-04
JP2007211261A (ja) 2007-08-23
KR101230207B1 (ko) 2013-02-05

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