TW200735702A - Display - Google Patents

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Info

Publication number
TW200735702A
TW200735702A TW095145555A TW95145555A TW200735702A TW 200735702 A TW200735702 A TW 200735702A TW 095145555 A TW095145555 A TW 095145555A TW 95145555 A TW95145555 A TW 95145555A TW 200735702 A TW200735702 A TW 200735702A
Authority
TW
Taiwan
Prior art keywords
display
silicon nitride
protective film
density
nitride film
Prior art date
Application number
TW095145555A
Other languages
English (en)
Other versions
TWI339544B (zh
Inventor
Toshiaki Imai
Kaoru Abe
Shinji Kubota
Shinichiro Morikawa
Teiichiro Nishimura
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200735702A publication Critical patent/TW200735702A/zh
Application granted granted Critical
Publication of TWI339544B publication Critical patent/TWI339544B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
TW095145555A 2005-12-07 2006-12-07 Display TW200735702A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005352887 2005-12-07
JP2006322104A JP2007184251A (ja) 2005-12-07 2006-11-29 表示装置

Publications (2)

Publication Number Publication Date
TW200735702A true TW200735702A (en) 2007-09-16
TWI339544B TWI339544B (zh) 2011-03-21

Family

ID=38122864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145555A TW200735702A (en) 2005-12-07 2006-12-07 Display

Country Status (5)

Country Link
US (2) US8237361B2 (zh)
JP (1) JP2007184251A (zh)
KR (1) KR20080073320A (zh)
TW (1) TW200735702A (zh)
WO (1) WO2007066719A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076232A (ja) 2007-09-19 2009-04-09 Fujifilm Corp 環境感受性デバイス、環境感受性素子の封止方法
JP5024220B2 (ja) 2008-07-24 2012-09-12 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、電子機器
WO2010035337A1 (ja) * 2008-09-26 2010-04-01 富士電機ホールディングス株式会社 有機ｅｌデバイスおよびその製造方法
JP2010093172A (ja) 2008-10-10 2010-04-22 Fujifilm Corp 封止デバイス
JP2011029161A (ja) * 2009-06-26 2011-02-10 Sumitomo Chemical Co Ltd 立体表示装置
JP5577124B2 (ja) * 2010-03-18 2014-08-20 株式会社ジャパンディスプレイ 有機半導体装置及びその製造方法
KR101223724B1 (ko) 2010-10-25 2013-01-17 삼성디스플레이 주식회사 전자소자용 보호막 및 그 제조 방법
JP2012151261A (ja) * 2011-01-19 2012-08-09 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2012209209A (ja) * 2011-03-30 2012-10-25 Toppan Printing Co Ltd 有機エレクトロルミネッセンスパネルの製造方法
FR2976727B1 (fr) * 2011-06-17 2013-11-08 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique a emetteur selectif
KR20150003200A (ko) * 2012-03-16 2015-01-08 오스람 오엘이디 게엠베하 수분 장벽 층을 갖는 전자 컴포넌트
JP2013008704A (ja) * 2012-10-11 2013-01-10 Sony Corp 表示装置、表示装置の製造方法、及び、電子機器
JP6054763B2 (ja) 2013-02-12 2016-12-27 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
WO2014188731A1 (ja) 2013-05-24 2014-11-27 パナソニック株式会社 封止膜、有機ｅｌデバイス、可撓性基板、および、封止膜の製造方法
JP2016018849A (ja) 2014-07-07 2016-02-01 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP6490921B2 (ja) 2014-08-08 2019-03-27 株式会社ジャパンディスプレイ 表示装置、及びその製造方法
JP6453579B2 (ja) 2014-08-08 2019-01-16 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP6613196B2 (ja) * 2016-03-31 2019-11-27 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル
JP6815901B2 (ja) 2017-03-06 2021-01-20 株式会社日本製鋼所 表示装置およびその製造方法
JPWO2018190010A1 (ja) * 2017-04-11 2020-02-27 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子
JP2018198180A (ja) * 2017-05-24 2018-12-13 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子
JP6805099B2 (ja) * 2017-09-08 2020-12-23 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル、有機ｅｌ表示装置、およびその製造方法
KR20230119201A (ko) * 2020-12-18 2023-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 장치의 제작 방법, 및 전자 기기

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3817081B2 (ja) 1999-01-29 2006-08-30 パイオニア株式会社 有機ｅｌ素子の製造方法
CN1156035C (zh) 2001-06-14 2004-06-30 中国科学院上海冶金研究所 有机发光器件的保护膜及它的封装方法
JP3948365B2 (ja) * 2002-07-30 2007-07-25 株式会社島津製作所 保護膜製造方法および有機ｅｌ素子
JP3897173B2 (ja) * 2003-05-23 2007-03-22 セイコーエプソン株式会社 有機ｅｌ表示装置及びその製造方法
JP2005222778A (ja) * 2004-02-04 2005-08-18 Shimadzu Corp 有機エレクトロルミネッセンス素子およびその製造方法
JP2005285659A (ja) * 2004-03-30 2005-10-13 Toyota Industries Corp 有機ｅｌ装置及びその製造方法
US7476908B2 (en) * 2004-05-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060046502A1 (en) * 2004-08-27 2006-03-02 Ngo Minh V Deposition of hard-mask with minimized hillocks and bubbles
JP2006338947A (ja) * 2005-05-31 2006-12-14 Sanyo Electric Co Ltd 保護膜形成方法および保護膜
EP1983559B1 (en) * 2006-02-07 2016-04-20 Fujitsu Ltd. Semiconductor device and process for producing the same
JP5135992B2 (ja) * 2007-10-24 2013-02-06 ソニー株式会社 半導体装置およびその製造方法
JP5309619B2 (ja) * 2008-03-07 2013-10-09 ソニー株式会社 半導体装置およびその製造方法
JP2009290073A (ja) * 2008-05-30 2009-12-10 Renesas Technology Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2007184251A (ja) 2007-07-19
KR20080073320A (ko) 2008-08-08
WO2007066719A1 (ja) 2007-06-14
US20120280614A1 (en) 2012-11-08
TWI339544B (zh) 2011-03-21
US8237361B2 (en) 2012-08-07
US20090309486A1 (en) 2009-12-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees