TW200734438A - Metal-polishing liquid and chemical-mechanical polishing method using the same - Google Patents

Metal-polishing liquid and chemical-mechanical polishing method using the same

Info

Publication number
TW200734438A
TW200734438A TW096103626A TW96103626A TW200734438A TW 200734438 A TW200734438 A TW 200734438A TW 096103626 A TW096103626 A TW 096103626A TW 96103626 A TW96103626 A TW 96103626A TW 200734438 A TW200734438 A TW 200734438A
Authority
TW
Taiwan
Prior art keywords
group
formula
metal
chemical
same
Prior art date
Application number
TW096103626A
Other languages
English (en)
Inventor
Katsuhiro Yamashita
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200734438A publication Critical patent/TW200734438A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW096103626A 2006-02-13 2007-02-01 Metal-polishing liquid and chemical-mechanical polishing method using the same TW200734438A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006035853A JP2007214518A (ja) 2006-02-13 2006-02-13 金属用研磨液

Publications (1)

Publication Number Publication Date
TW200734438A true TW200734438A (en) 2007-09-16

Family

ID=38263781

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103626A TW200734438A (en) 2006-02-13 2007-02-01 Metal-polishing liquid and chemical-mechanical polishing method using the same

Country Status (3)

Country Link
US (1) US8034252B2 (zh)
JP (1) JP2007214518A (zh)
TW (1) TW200734438A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386992B (zh) * 2007-03-20 2013-02-21 Kuraray Co 金屬膜研磨用墊及使用它之金屬膜之研磨方法
TWI411669B (zh) * 2008-03-25 2013-10-11 Fujifilm Corp 金屬研磨組成物及化學機械研磨方法

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TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) * 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
KR20170044522A (ko) 2015-10-15 2017-04-25 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법
JP7083680B2 (ja) * 2018-04-05 2022-06-13 花王株式会社 研磨液組成物
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
US10988635B2 (en) * 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386992B (zh) * 2007-03-20 2013-02-21 Kuraray Co 金屬膜研磨用墊及使用它之金屬膜之研磨方法
TWI411669B (zh) * 2008-03-25 2013-10-11 Fujifilm Corp 金屬研磨組成物及化學機械研磨方法

Also Published As

Publication number Publication date
US8034252B2 (en) 2011-10-11
JP2007214518A (ja) 2007-08-23
US20070167016A1 (en) 2007-07-19

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