TW200733203A - Shower head structure and cleaning method thereof - Google Patents

Shower head structure and cleaning method thereof

Info

Publication number
TW200733203A
TW200733203A TW096109914A TW96109914A TW200733203A TW 200733203 A TW200733203 A TW 200733203A TW 096109914 A TW096109914 A TW 096109914A TW 96109914 A TW96109914 A TW 96109914A TW 200733203 A TW200733203 A TW 200733203A
Authority
TW
Taiwan
Prior art keywords
main body
shower head
head
film forming
head structure
Prior art date
Application number
TW096109914A
Other languages
English (en)
Chinese (zh)
Other versions
TWI310216B (enExample
Inventor
Tomonao Kuwada
Masatake Yoneda
Takashi Nishimori
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200733203A publication Critical patent/TW200733203A/zh
Application granted granted Critical
Publication of TWI310216B publication Critical patent/TWI310216B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4557Heated nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45572Cooled nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW096109914A 2000-09-08 2001-09-06 Shower head structure and cleaning method thereof TW200733203A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000272645 2000-09-08

Publications (2)

Publication Number Publication Date
TW200733203A true TW200733203A (en) 2007-09-01
TWI310216B TWI310216B (enExample) 2009-05-21

Family

ID=18758726

Family Applications (5)

Application Number Title Priority Date Filing Date
TW096109914A TW200733203A (en) 2000-09-08 2001-09-06 Shower head structure and cleaning method thereof
TW096143030A TWI303084B (en) 2000-09-08 2001-09-06 Shower head structure, film forming method, and gas processing apparauts
TW090122145A TWI297510B (enExample) 2000-09-08 2001-09-06
TW096143031A TWI334888B (enExample) 2000-09-08 2001-09-06
TW096143031D TW200819555A (en) 2000-09-08 2001-09-06 Shower head structure, device and method for film formation, and method for cleaning

Family Applications After (4)

Application Number Title Priority Date Filing Date
TW096143030A TWI303084B (en) 2000-09-08 2001-09-06 Shower head structure, film forming method, and gas processing apparauts
TW090122145A TWI297510B (enExample) 2000-09-08 2001-09-06
TW096143031A TWI334888B (enExample) 2000-09-08 2001-09-06
TW096143031D TW200819555A (en) 2000-09-08 2001-09-06 Shower head structure, device and method for film formation, and method for cleaning

Country Status (4)

Country Link
US (2) US6905079B2 (enExample)
JP (1) JP2011236506A (enExample)
KR (4) KR100915252B1 (enExample)
TW (5) TW200733203A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473538B (zh) * 2007-09-25 2015-02-11 Lam Res Corp 電漿處理設備的噴淋頭電極組件、及其溫度控制模組與溫度控制方法
TWI763707B (zh) * 2016-09-09 2022-05-11 德商愛思強歐洲公司 Cvd反應器及cvd反應器之清潔方法

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
TW564498B (en) * 2001-08-20 2003-12-01 Asml Us Inc Apparatus and method for insulating a seal in a process chamber
JP4121269B2 (ja) * 2001-11-27 2008-07-23 日本エー・エス・エム株式会社 セルフクリーニングを実行するプラズマcvd装置及び方法
US7008484B2 (en) * 2002-05-06 2006-03-07 Applied Materials Inc. Method and apparatus for deposition of low dielectric constant materials
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
KR100965758B1 (ko) * 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US20050050708A1 (en) * 2003-09-04 2005-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded fastener apparatus and method for preventing particle contamination
JP4513329B2 (ja) * 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
JP4765328B2 (ja) * 2004-04-16 2011-09-07 東京エレクトロン株式会社 被処理体の処理装置
KR101060609B1 (ko) * 2004-06-29 2011-08-31 엘지디스플레이 주식회사 액정표시장치용 제조장치
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
KR100606561B1 (ko) * 2004-12-23 2006-08-01 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP4749785B2 (ja) * 2005-07-19 2011-08-17 東京エレクトロン株式会社 ガス処理装置
JP5020230B2 (ja) * 2006-02-24 2012-09-05 東京エレクトロン株式会社 Ti系膜の成膜方法および記憶媒体
JP2008047869A (ja) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5045000B2 (ja) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US7977791B2 (en) * 2007-07-09 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Selective formation of boron-containing metal cap pre-layer
US20090211707A1 (en) * 2008-02-22 2009-08-27 Hermes Systems Inc. Apparatus for gas distribution and its applications
US20100071614A1 (en) * 2008-09-22 2010-03-25 Momentive Performance Materials, Inc. Fluid distribution apparatus and method of forming the same
JP2010232637A (ja) * 2009-03-04 2010-10-14 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2012521095A (ja) * 2009-03-16 2012-09-10 アルタ デバイセズ,インコーポレイテッド 加熱ランプシステム及びその方法
US11134598B2 (en) * 2009-07-20 2021-09-28 Set North America, Llc 3D packaging with low-force thermocompression bonding of oxidizable materials
JP5654613B2 (ja) * 2010-11-24 2015-01-14 株式会社アルバック 成膜装置及び成膜装置のクリーニング方法
KR20120072563A (ko) * 2010-12-24 2012-07-04 주식회사 원익아이피에스 진공처리장치
WO2012124047A1 (ja) 2011-03-15 2012-09-20 東芝三菱電機産業システム株式会社 成膜装置
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
KR101327458B1 (ko) * 2012-01-10 2013-11-08 주식회사 유진테크 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치
US20150107650A1 (en) * 2012-01-24 2015-04-23 AMI Research & Development, LLC Monolithic broadband energy collector with detector position depending on wavelength
DE112013003706T5 (de) * 2012-07-27 2015-04-09 Applied Materials, Inc. Verfahren und Vorrichtung zum Abgeben von Prozessgasen an ein Substrat
KR101440307B1 (ko) * 2012-09-17 2014-09-18 주식회사 유진테크 기판처리장치
WO2014078356A1 (en) 2012-11-13 2014-05-22 AMI Research & Development, LLC Wideband light energy waveguide and detector
DE102012111218A1 (de) * 2012-11-21 2014-05-22 Emdeoled Gmbh Materialabgabekopf, Materialabgabeeinrichtung und Verfahren
JP6063741B2 (ja) * 2012-12-28 2017-01-18 東京エレクトロン株式会社 プラズマ処理容器及びプラズマ処理装置
US9583363B2 (en) 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial distension
US9557480B2 (en) 2013-11-06 2017-01-31 R.A. Miller Industries, Inc. Graphene coupled MIM rectifier especially for use in monolithic broadband infrared energy collector
JP5726281B1 (ja) * 2013-12-27 2015-05-27 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US10043686B2 (en) * 2013-12-31 2018-08-07 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
JP6363388B2 (ja) * 2014-05-01 2018-07-25 ロレアル ミストスプレー装置
CN104561939B (zh) * 2015-01-12 2017-11-24 深圳清溢光电股份有限公司 超薄反应腔
US10672594B2 (en) 2016-11-01 2020-06-02 Ontos Equipment Systems, Inc. System and method for plasma head thermal control
JP6823533B2 (ja) * 2017-04-24 2021-02-03 東京エレクトロン株式会社 チタンシリサイド領域を形成する方法
KR101987576B1 (ko) * 2018-01-24 2019-06-10 주식회사 기가레인 승강하는 유도부와 연동하는 연동부를 포함하는 기판 처리 장치
JP2021521648A (ja) * 2018-04-17 2021-08-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 加熱されるセラミック面板
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
WO2020219408A1 (en) * 2019-04-26 2020-10-29 Lam Research Corporation High temperature heating of a substrate in a processing chamber
CN112530774B (zh) * 2019-09-17 2024-04-05 中微半导体设备(上海)股份有限公司 等离子体处理设备
CN112908886B (zh) * 2019-11-19 2022-12-02 夏泰鑫半导体(青岛)有限公司 半导体处理设备
JP7341099B2 (ja) * 2020-04-07 2023-09-08 東京エレクトロン株式会社 クリーニング方法およびプラズマ処理装置
US11242600B2 (en) * 2020-06-17 2022-02-08 Applied Materials, Inc. High temperature face plate for deposition application
KR102832253B1 (ko) * 2020-10-06 2025-07-09 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 장치의 세정 방법
KR20230119592A (ko) * 2020-12-17 2023-08-16 램 리써치 코포레이션 다운스트림 플라즈마 챔버에서 에지 라디칼 플럭스 최적화
CN114790543A (zh) * 2021-01-26 2022-07-26 Asm Ip私人控股有限公司 用于沉积层的方法和系统
JP7468429B2 (ja) * 2021-03-29 2024-04-16 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
US12324061B2 (en) * 2021-04-06 2025-06-03 Applied Materials, Inc. Epitaxial deposition chamber
US20240124980A1 (en) * 2022-10-12 2024-04-18 Applied Materials, Inc. Bimetallic faceplate for substrate processing
CN116791061A (zh) * 2023-06-29 2023-09-22 上海华力集成电路制造有限公司 改善腔体清洁效率的方法
US20250129476A1 (en) * 2023-10-20 2025-04-24 Applied Materials, Inc. Optically active showerhead for process chamber

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744999A (en) * 1982-09-09 1988-05-17 Engelhard Corporation High throughput, high uniformity field emission devices
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
JPH02137318A (ja) 1988-11-18 1990-05-25 Tokyo Electron Ltd 処理装置
JPH02268429A (ja) 1989-04-11 1990-11-02 Tokyo Electron Ltd プラズマエッチング装置
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
JP3099101B2 (ja) 1993-05-10 2000-10-16 東京エレクトロン株式会社 熱処理装置
JP2909364B2 (ja) * 1993-09-20 1999-06-23 東京エレクトロン株式会社 処理装置及びそのクリーニング方法
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
JP3165322B2 (ja) * 1994-03-28 2001-05-14 東京エレクトロン株式会社 減圧容器
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JPH08325736A (ja) * 1995-05-29 1996-12-10 Ebara Corp 薄膜気相成長装置
TW323387B (enExample) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
KR0167248B1 (ko) * 1995-07-24 1999-02-01 문정환 반도체 기판의 전처리방법
US5667622A (en) * 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
US5895530A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
JP3360265B2 (ja) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN1173654A (zh) * 1996-07-16 1998-02-18 萨墨福尼克斯株式会社 温度控制设备
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
JP3798491B2 (ja) * 1997-01-08 2006-07-19 東京エレクトロン株式会社 ドライエッチング方法
JPH10321555A (ja) * 1997-05-15 1998-12-04 Tokyo Electron Ltd プラズマ成膜装置及びそのクリーニング方法
JP4038599B2 (ja) * 1997-05-15 2008-01-30 東京エレクトロン株式会社 クリーニング方法
JP3480271B2 (ja) * 1997-10-07 2003-12-15 東京エレクトロン株式会社 熱処理装置のシャワーヘッド構造
JPH11117071A (ja) * 1997-10-09 1999-04-27 Anelva Corp Cvd装置
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6635569B1 (en) * 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100268432B1 (ko) * 1998-09-05 2000-11-01 윤종용 플라즈마 에칭을 위한 장치
JP2000260721A (ja) * 1999-01-08 2000-09-22 Sony Corp 化学的気相成長装置、化学的気相成長方法および化学的気相成長装置のクリーニング方法
JP4126517B2 (ja) * 1999-04-08 2008-07-30 ソニー株式会社 気相加工装置
KR100302609B1 (ko) * 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6319766B1 (en) * 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6553932B2 (en) * 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473538B (zh) * 2007-09-25 2015-02-11 Lam Res Corp 電漿處理設備的噴淋頭電極組件、及其溫度控制模組與溫度控制方法
TWI763707B (zh) * 2016-09-09 2022-05-11 德商愛思強歐洲公司 Cvd反應器及cvd反應器之清潔方法

Also Published As

Publication number Publication date
KR20080083241A (ko) 2008-09-17
KR100907968B1 (ko) 2009-07-16
TWI297510B (enExample) 2008-06-01
US20020029748A1 (en) 2002-03-14
KR100915252B1 (ko) 2009-09-03
KR100919331B1 (ko) 2009-09-25
TWI334888B (enExample) 2010-12-21
TWI303084B (en) 2008-11-11
TW200819555A (en) 2008-05-01
KR20020020648A (ko) 2002-03-15
KR20080083243A (ko) 2008-09-17
KR100919330B1 (ko) 2009-09-25
JP2011236506A (ja) 2011-11-24
US20050082385A1 (en) 2005-04-21
US6905079B2 (en) 2005-06-14
TWI310216B (enExample) 2009-05-21
KR20080083242A (ko) 2008-09-17
TW200811927A (en) 2008-03-01

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