TW200715396A - Manufacturing method for a semiconductor device - Google Patents

Manufacturing method for a semiconductor device

Info

Publication number
TW200715396A
TW200715396A TW095119304A TW95119304A TW200715396A TW 200715396 A TW200715396 A TW 200715396A TW 095119304 A TW095119304 A TW 095119304A TW 95119304 A TW95119304 A TW 95119304A TW 200715396 A TW200715396 A TW 200715396A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
manufacturing
semiconductor device
semiconductor
active surface
Prior art date
Application number
TW095119304A
Other languages
English (en)
Inventor
Kazumi Hara
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200715396A publication Critical patent/TW200715396A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
TW095119304A 2005-06-24 2006-06-01 Manufacturing method for a semiconductor device TW200715396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005184652A JP4613709B2 (ja) 2005-06-24 2005-06-24 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200715396A true TW200715396A (en) 2007-04-16

Family

ID=37568130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119304A TW200715396A (en) 2005-06-24 2006-06-01 Manufacturing method for a semiconductor device

Country Status (5)

Country Link
US (1) US7410908B2 (zh)
JP (1) JP4613709B2 (zh)
KR (1) KR100728153B1 (zh)
CN (1) CN100405554C (zh)
TW (1) TW200715396A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726136B (zh) * 2016-09-09 2021-05-01 日商迪思科股份有限公司 晶圓及晶圓的加工方法

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150235A (ja) * 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
JP2007109999A (ja) * 2005-10-17 2007-04-26 Tokyo Electron Ltd 貼り合せ方法
JP5312923B2 (ja) 2008-01-31 2013-10-09 大日本スクリーン製造株式会社 基板処理装置
JP2010062269A (ja) * 2008-09-02 2010-03-18 Three M Innovative Properties Co ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法
US9093448B2 (en) 2008-11-25 2015-07-28 Lord Corporation Methods for protecting a die surface with photocurable materials
EP2359395B1 (en) * 2008-11-25 2013-08-14 Lord Corporation Methods for protecting a die surface with photocurable materials
DE102008044200B4 (de) * 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2011061381A (ja) * 2009-09-08 2011-03-24 Shin-Etsu Chemical Co Ltd 複合圧電基板および弾性表面波素子
JP5320619B2 (ja) 2009-09-08 2013-10-23 三菱電機株式会社 半導体装置の製造方法
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
US7883991B1 (en) * 2010-02-18 2011-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Temporary carrier bonding and detaching processes
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8722540B2 (en) 2010-07-22 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Controlling defects in thin wafer handling
US8324105B2 (en) * 2010-08-13 2012-12-04 Victory Gain Group Corporation Stacking method and stacking carrier
JP5619542B2 (ja) * 2010-09-08 2014-11-05 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体基板の処理方法及び半導体装置の製造方法
TWI557786B (zh) * 2011-02-28 2016-11-11 道康寧公司 晶圓膠合系統及其用來膠合和脫膠的方法
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
CN104662652B (zh) * 2012-06-12 2016-12-28 埃里希·塔尔纳 衬底‑产品衬底‑组合以及用于制造衬底‑产品衬底‑组合的设备和方法
US10014202B2 (en) 2012-06-12 2018-07-03 Erich Thallner Device and method for aligning substrates
KR101284220B1 (ko) * 2012-07-06 2013-07-09 (주) 이피웍스 예각 반도체 웨이퍼를 사용한 관통 실리콘 비아 식각방법
US9682539B2 (en) 2012-07-30 2017-06-20 Erich Thallner Substrate composite, method and device for bonding of substrates
JP6188051B2 (ja) * 2012-12-25 2017-08-30 国立研究開発法人産業技術総合研究所 部品製造方法、接合剥離装置、および複合キャリア
KR102077248B1 (ko) 2013-01-25 2020-02-13 삼성전자주식회사 기판 가공 방법
CN105190844B (zh) * 2013-05-24 2017-08-22 富士电机株式会社 半导体装置的制造方法
FR3015110B1 (fr) 2013-12-17 2017-03-24 Commissariat Energie Atomique Procede de fabrication d’un substrat-poignee destine au collage temporaire d’un substrat
JP6457223B2 (ja) * 2014-09-16 2019-01-23 東芝メモリ株式会社 基板分離方法および半導体製造装置
TW201707959A (zh) * 2015-08-21 2017-03-01 Jsr Corp 基材的處理方法、暫時固定用組成物及半導體裝置
JP6463664B2 (ja) * 2015-11-27 2019-02-06 信越化学工業株式会社 ウエハ加工体及びウエハ加工方法
US10957722B2 (en) * 2016-05-26 2021-03-23 Joled Inc. Method of manufacturing flexible device using multidirectional oblique irradiation of an interface between a support substrate and a flexible substrate
JP6577419B2 (ja) * 2016-06-20 2019-09-18 信越ポリマー株式会社 半導体ウェーハの薬液誘導具及び半導体ウェーハの処理方法
TW202324523A (zh) * 2021-11-30 2023-06-16 群創光電股份有限公司 電子裝置的製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04163907A (ja) * 1990-10-29 1992-06-09 Fujitsu Ltd 半導体基板
JPH0660323A (ja) * 1992-07-31 1994-03-04 Mitsumi Electric Co Ltd テーパ状エッチング方法
JPH0661477A (ja) * 1992-08-10 1994-03-04 Meidensha Corp 半導体素子および半導体素子の製造方法
EP0678920B1 (en) * 1994-04-20 2003-01-29 GENERAL SEMICONDUCTOR, Inc. Semiconductor device with mesa structure
JPH09148283A (ja) * 1995-11-28 1997-06-06 Mitsubishi Electric Corp ウエハ薄板化方法及び装置
US6342434B1 (en) * 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
JPH11204493A (ja) * 1998-01-09 1999-07-30 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
US6573141B1 (en) * 1999-03-12 2003-06-03 Zilog, Inc. In-situ etch and pre-clean for high quality thin oxides
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
CN1169197C (zh) * 2001-03-28 2004-09-29 华邦电子股份有限公司 一种晶片边缘的蚀刻机及其蚀刻方法
JP4530592B2 (ja) * 2001-09-10 2010-08-25 三益半導体工業株式会社 ウェーハの表面処理装置
JP4565804B2 (ja) 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
KR100629764B1 (ko) * 2002-10-25 2006-09-28 마쯔시다덴기산교 가부시키가이샤 반도체 디바이스 및 반도체 디바이스를 조립하기 위한수지 바인더
JP2004363154A (ja) 2003-06-02 2004-12-24 Seiko Epson Corp 半導体装置の製造方法及び半導体基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726136B (zh) * 2016-09-09 2021-05-01 日商迪思科股份有限公司 晶圓及晶圓的加工方法

Also Published As

Publication number Publication date
US20060292887A1 (en) 2006-12-28
CN1885500A (zh) 2006-12-27
KR100728153B1 (ko) 2007-06-13
JP2007005596A (ja) 2007-01-11
JP4613709B2 (ja) 2011-01-19
KR20060135506A (ko) 2006-12-29
US7410908B2 (en) 2008-08-12
CN100405554C (zh) 2008-07-23

Similar Documents

Publication Publication Date Title
TW200715396A (en) Manufacturing method for a semiconductor device
TW200707625A (en) Semiconductor wafer and processing method for same
TW200711066A (en) Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device
WO2008078637A1 (ja) パターン形成方法、および半導体装置の製造方法
TW200636905A (en) Suction device, polishing device, semiconductor device and manufacturing method of semiconductor device
EP1975998A3 (en) Method for manufacturing a plurality of island-shaped SOI structures
JP2009111375A5 (zh)
TW200707632A (en) Semiconductor device and forming method thereof
ATE441938T1 (de) Herstellungsverfahren für finfets mit verringertem widerstand
WO2009010585A3 (en) Method for producing an emitter structure and emitter structures resulting therefrom
TW200633022A (en) Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
JP2007524243A5 (zh)
WO2009063620A1 (ja) プラズマダイシング装置および半導体チップの製造方法
EP1788621A3 (en) Method for manufacturing bonded substrate and bonded substrate manufactured by the method
WO2008103331A3 (en) Wide-bandgap semiconductor devices
JP5887633B1 (ja) 半導体片の製造方法
SG131052A1 (en) Substrate processing method
WO2004030045A8 (en) Semiconductor device processing
TW200632995A (en) Single wafer dryer and drying methods
TW200607038A (en) Contacts to semiconductor fin device and method for manufacturing the same
JP2008541468A (ja) 均一な化学エッチングの方法
TW200737382A (en) Method of manufacturing semiconductor device
TW200634918A (en) Fabrication process of semiconductor device and polishing method
TW200601379A (en) Semiconductor device manufacturing method and manufacturing apparatus
TW200735271A (en) Semiconductor device fabrication method