TW200712235A - Method of forming a indicator - Google Patents

Method of forming a indicator

Info

Publication number
TW200712235A
TW200712235A TW095135498A TW95135498A TW200712235A TW 200712235 A TW200712235 A TW 200712235A TW 095135498 A TW095135498 A TW 095135498A TW 95135498 A TW95135498 A TW 95135498A TW 200712235 A TW200712235 A TW 200712235A
Authority
TW
Taiwan
Prior art keywords
indicator
forming
bulk material
bores
consumable
Prior art date
Application number
TW095135498A
Other languages
English (en)
Other versions
TWI319440B (en
Inventor
Yi-Li Hsiao
Chen-Hua Yu
Jean Wang
Lawrance Sheu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200712235A publication Critical patent/TW200712235A/zh
Application granted granted Critical
Publication of TWI319440B publication Critical patent/TWI319440B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3479—Detecting exhaustion of target material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3482—Detecting or avoiding eroding through
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Extrusion Moulding Of Plastics Or The Like (AREA)
  • Metal Rolling (AREA)
TW095135498A 2005-09-26 2006-09-26 Method of forming a indicator TWI319440B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72039005P 2005-09-26 2005-09-26
US72872405P 2005-10-20 2005-10-20
US11/427,618 US7891536B2 (en) 2005-09-26 2006-06-29 PVD target with end of service life detection capability

Publications (2)

Publication Number Publication Date
TW200712235A true TW200712235A (en) 2007-04-01
TWI319440B TWI319440B (en) 2010-01-11

Family

ID=37892521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135498A TWI319440B (en) 2005-09-26 2006-09-26 Method of forming a indicator

Country Status (5)

Country Link
US (3) US7891536B2 (zh)
JP (1) JP4646883B2 (zh)
KR (1) KR100827748B1 (zh)
SG (1) SG131006A1 (zh)
TW (1) TWI319440B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
JP2009245988A (ja) * 2008-03-28 2009-10-22 Tokyo Electron Ltd プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法
DE102010052341B4 (de) * 2010-11-25 2015-02-12 Von Ardenne Gmbh Schutzvorrichtung an Rohrtargets
US20130206589A1 (en) * 2012-02-14 2013-08-15 Solar Applied Materials Technology Corp. Sputtering Target Having Alarm Function
US10060023B2 (en) 2012-10-19 2018-08-28 Infineon Technologies Ag Backing plate for a sputter target, sputter target, and sputter device
DE102013011068A1 (de) * 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Targetalter-Kompensationsverfahren zur Durchführung von stabilen reaktiven Sputterverfahren
US10041868B2 (en) * 2015-01-28 2018-08-07 Lam Research Corporation Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber
US9791415B2 (en) 2015-06-25 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for monitoring usage of a physical vapor deposition (PVD) target with an ultrasonic transducer
CN109825810A (zh) * 2019-04-04 2019-05-31 浙江工业大学 一种真空镀膜溅射靶材镀穿警报装置
US11424111B2 (en) * 2020-06-25 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited Sputtering target assembly to prevent overetch of backing plate and methods of using the same

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US1990718A (en) * 1931-04-23 1935-02-12 Elastic Stop Nut Corp Process of making nuts
DE1527872A1 (de) * 1966-07-20 1969-12-04 Reisholz Stahl & Roehrenwerk Vorrichtung und Verfahren zum Strangpressen von Rohren
US4324631A (en) 1979-07-23 1982-04-13 Spin Physics, Inc. Magnetron sputtering of magnetic materials
ATE10512T1 (de) 1980-08-08 1984-12-15 Battelle Development Corporation Vorrichtung zur beschichtung von substraten mittels hochleistungskathodenzerstaeubung sowie zerstaeuberkathode fuer diese vorrichtung.
US4336119A (en) 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4545882A (en) 1983-09-02 1985-10-08 Shatterproof Glass Corporation Method and apparatus for detecting sputtering target depletion
DE3630737C1 (de) * 1986-09-10 1987-11-05 Philips & Du Pont Optical Kathodenzerstaeubungseinrichtung mit einer Vorrichtung zur Messung eines kritischen Target-Abtrages
CH669609A5 (zh) 1986-12-23 1989-03-31 Balzers Hochvakuum
EP0417221A1 (de) 1989-03-15 1991-03-20 Balzers Aktiengesellschaft Verfahren zur detektion des erreichens einer vorgebbaren tiefe der targetkörpererosion sowie targetkörper hierfür
JPH0641744A (ja) 1992-05-26 1994-02-15 Hitachi Ltd スパッタ装置
JPH0688230A (ja) 1992-09-04 1994-03-29 Nippon Steel Corp スパッタリング装置
JPH06140383A (ja) 1992-10-27 1994-05-20 Nippon Steel Corp スパッタリング装置
JPH06212416A (ja) 1993-01-12 1994-08-02 Nippon Steel Corp スパッタリング装置
WO1994016845A1 (en) * 1993-01-19 1994-08-04 Jennings Winch & Foundry Co., Ltd. Casting metal tubes having one closed end
EP0615273A1 (en) * 1993-03-12 1994-09-14 Applied Materials, Inc. Method and apparatus for detection of sputtering target erosion
JPH06306593A (ja) 1993-04-16 1994-11-01 Nkk Corp スパッタリング装置
JPH08176808A (ja) 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
JPH0754140A (ja) 1993-08-19 1995-02-28 Matsushita Electron Corp スパッタリング装置
JPH07258837A (ja) * 1994-03-22 1995-10-09 Mitsubishi Materials Corp センサー付きセラミックスターゲット
JPH07292472A (ja) 1994-04-21 1995-11-07 Sharp Corp スパッタ装置のターゲット減肉量検出方法及びその装置
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JP2003529206A (ja) 1999-11-24 2003-09-30 ハネウェル・インターナショナル・インコーポレーテッド 物理蒸着ターゲット、導電性集積回路金属合金相互接続配線、電気めっきアノード、集積回路における導電性相互接続配線として用いるための金属合金
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US7063773B2 (en) 2000-08-17 2006-06-20 Tosoh Smd, Inc. High purity sputter targets with target end-of-life indication and method of manufacture
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DE10110823A1 (de) * 2001-03-07 2002-10-02 Bosch Gmbh Robert Verfahren zum Abtragen von Materialablagerungen, die bei einer Laserbearbeitung entstehen
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US20040262157A1 (en) * 2003-02-25 2004-12-30 Ford Robert B. Method of forming sputtering target assembly and assemblies made therefrom
JP2004299134A (ja) 2003-03-28 2004-10-28 Toshiba Mach Co Ltd 射出成形機における材料供給装置及び射出成形機
US8795486B2 (en) 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US20070068796A1 (en) 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability

Also Published As

Publication number Publication date
SG131006A1 (en) 2007-04-26
US7891536B2 (en) 2011-02-22
TWI319440B (en) 2010-01-11
US20070068804A1 (en) 2007-03-29
KR100827748B1 (ko) 2008-05-07
JP2007092174A (ja) 2007-04-12
JP4646883B2 (ja) 2011-03-09
KR20070034935A (ko) 2007-03-29
US20110126397A1 (en) 2011-06-02
US20120131784A1 (en) 2012-05-31
US8276648B2 (en) 2012-10-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees