MY163711A - Method for producing silicon blocks - Google Patents

Method for producing silicon blocks

Info

Publication number
MY163711A
MY163711A MYPI2012004935A MYPI2012004935A MY163711A MY 163711 A MY163711 A MY 163711A MY PI2012004935 A MYPI2012004935 A MY PI2012004935A MY PI2012004935 A MYPI2012004935 A MY PI2012004935A MY 163711 A MY163711 A MY 163711A
Authority
MY
Malaysia
Prior art keywords
container
silicon
case
crystal seeds
silicon melt
Prior art date
Application number
MYPI2012004935A
Inventor
Trempa Matthias
Reimann Christian
Friedrich Jochen
Dietrich Marc
Original Assignee
Solarworld Innovations Gmbh
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarworld Innovations Gmbh, Fraunhofer Ges Forschung filed Critical Solarworld Innovations Gmbh
Publication of MY163711A publication Critical patent/MY163711A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

METHOD FOR PRODUCING SILICON BLOCKS (9) BY SOLIDIFYING A SILICON MELT COMPRISING THE FOLLOWING STEPS: PROVIDING A CONTAINER (1) TO RECEIVE A SILICON MELT WITH A BASE WALL (2) AND AT LEAST ONE SIDE WALL (3), ARRANGING A PLURALITY OF CRYSTAL SEEDS (4) ON THE BASE WALL (2), ARRANGING SILICON (8) IN THE CONTAINER (1), DIRECTED SOLIDIFICATION OF A SILICON MELT IN THE CONTAINER (1), WHEREIN THE CRYSTAL SEEDS (4) IN EACH CASE HAVE AT LEAST ONE SIDE FACE (6) AND END FACES (7) AND IN EACH CASE HAVE A PREDETERMINED AXIAL ORIENTATION, AND WHEREIN THE SIDE FACES (6) OF TWO ADJACENT CRYSTAL SEEDS (4) ARE IN EACH CASE SEPARATED FROM ONE ANOTHER BY A GAP (5).
MYPI2012004935A 2011-11-18 2012-11-14 Method for producing silicon blocks MY163711A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011086669.8A DE102011086669B4 (en) 2011-11-18 2011-11-18 Process for the production of silicon blocks as well as silicon block

Publications (1)

Publication Number Publication Date
MY163711A true MY163711A (en) 2017-10-13

Family

ID=48221850

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012004935A MY163711A (en) 2011-11-18 2012-11-14 Method for producing silicon blocks

Country Status (5)

Country Link
KR (1) KR101428213B1 (en)
CN (1) CN103122478B (en)
DE (1) DE102011086669B4 (en)
MY (1) MY163711A (en)
TW (1) TWI468560B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3005966B1 (en) * 2013-05-27 2016-12-30 Commissariat Energie Atomique PROCESS FOR MANUFACTURING A SILICON INGOT BY DIRECTING SOLIDIFICATION ON GERMS
FR3005967B1 (en) * 2013-05-27 2017-06-02 Commissariat Energie Atomique PROCESS FOR PRODUCING A SILICON INGOT HAVING SYMMETRIC GRAIN SEALS
FR3029941B1 (en) * 2014-12-12 2019-10-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives PAVING OF GERMS
CN104911691B (en) * 2015-04-15 2017-11-28 江西赛维Ldk太阳能高科技有限公司 The preparation method and quasi-monocrystalline silicon of a kind of laying method of seed crystal, quasi-monocrystalline silicon
CN106245113B (en) * 2016-09-18 2018-10-19 江西赛维Ldk太阳能高科技有限公司 A kind of polycrystal silicon ingot and preparation method thereof and polysilicon chip
CN106757331B (en) * 2016-12-16 2019-03-08 赛维Ldk太阳能高科技(新余)有限公司 A kind of polycrystal silicon ingot and preparation method thereof
CN109385662A (en) * 2018-12-12 2019-02-26 赛维Ldk太阳能高科技(新余)有限公司 The preparation method and class monocrystalline silicon piece of a kind of laying method of seed crystal, class monocrystal silicon
CN109989104A (en) * 2019-01-25 2019-07-09 赛维Ldk太阳能高科技(新余)有限公司 A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005013410B4 (en) 2005-03-23 2008-01-31 Deutsche Solar Ag Apparatus and method for crystallizing non-ferrous metals
JP4887504B2 (en) * 2005-07-04 2012-02-29 国立大学法人東北大学 Grain boundary character control polycrystal production method
CN101370969A (en) * 2006-01-20 2009-02-18 Bp北美公司 Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
KR101400075B1 (en) 2006-01-20 2014-05-28 에이엠지 아이디얼캐스트 솔라 코포레이션 Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
AU2008279415A1 (en) * 2007-07-20 2009-01-29 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
KR20100050510A (en) 2007-07-20 2010-05-13 비피 코포레이션 노쓰 아메리카 인코포레이티드 Methods for manufacturing cast silicon from seed crystals
DE102007035756B4 (en) 2007-07-27 2010-08-05 Deutsche Solar Ag Process for the production of non-ferrous metal blocks
DE102007038851A1 (en) * 2007-08-16 2009-02-19 Schott Ag Process for the preparation of monocrystalline metal or semimetal bodies
CN101654805B (en) * 2009-09-24 2011-09-14 浙江大学 Preparation method of casting polysilicon with large crystal grains in single crystal direction
DE102010029741B4 (en) * 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Method for producing silicon wafers, silicon wafers and use of a silicon wafer as a silicon solar cell
CN101935869B (en) * 2010-09-17 2013-11-20 浙江大学 Crucible and substrate slice for growing and casting monocrystalline silicon
CN102242394A (en) * 2011-06-15 2011-11-16 安阳市凤凰光伏科技有限公司 Casting method for producing furnace feeding silicon material similar to monocrystalline silicon ingot and seed crystal placing method

Also Published As

Publication number Publication date
KR101428213B1 (en) 2014-08-07
CN103122478B (en) 2016-02-17
KR20130055534A (en) 2013-05-28
TWI468560B (en) 2015-01-11
CN103122478A (en) 2013-05-29
TW201326473A (en) 2013-07-01
DE102011086669B4 (en) 2016-08-04
DE102011086669A1 (en) 2013-05-23

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