MY163711A - Method for producing silicon blocks - Google Patents
Method for producing silicon blocksInfo
- Publication number
- MY163711A MY163711A MYPI2012004935A MYPI2012004935A MY163711A MY 163711 A MY163711 A MY 163711A MY PI2012004935 A MYPI2012004935 A MY PI2012004935A MY PI2012004935 A MYPI2012004935 A MY PI2012004935A MY 163711 A MY163711 A MY 163711A
- Authority
- MY
- Malaysia
- Prior art keywords
- container
- silicon
- case
- crystal seeds
- silicon melt
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
METHOD FOR PRODUCING SILICON BLOCKS (9) BY SOLIDIFYING A SILICON MELT COMPRISING THE FOLLOWING STEPS: PROVIDING A CONTAINER (1) TO RECEIVE A SILICON MELT WITH A BASE WALL (2) AND AT LEAST ONE SIDE WALL (3), ARRANGING A PLURALITY OF CRYSTAL SEEDS (4) ON THE BASE WALL (2), ARRANGING SILICON (8) IN THE CONTAINER (1), DIRECTED SOLIDIFICATION OF A SILICON MELT IN THE CONTAINER (1), WHEREIN THE CRYSTAL SEEDS (4) IN EACH CASE HAVE AT LEAST ONE SIDE FACE (6) AND END FACES (7) AND IN EACH CASE HAVE A PREDETERMINED AXIAL ORIENTATION, AND WHEREIN THE SIDE FACES (6) OF TWO ADJACENT CRYSTAL SEEDS (4) ARE IN EACH CASE SEPARATED FROM ONE ANOTHER BY A GAP (5).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011086669.8A DE102011086669B4 (en) | 2011-11-18 | 2011-11-18 | Process for the production of silicon blocks as well as silicon block |
Publications (1)
Publication Number | Publication Date |
---|---|
MY163711A true MY163711A (en) | 2017-10-13 |
Family
ID=48221850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2012004935A MY163711A (en) | 2011-11-18 | 2012-11-14 | Method for producing silicon blocks |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR101428213B1 (en) |
CN (1) | CN103122478B (en) |
DE (1) | DE102011086669B4 (en) |
MY (1) | MY163711A (en) |
TW (1) | TWI468560B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3005966B1 (en) * | 2013-05-27 | 2016-12-30 | Commissariat Energie Atomique | PROCESS FOR MANUFACTURING A SILICON INGOT BY DIRECTING SOLIDIFICATION ON GERMS |
FR3005967B1 (en) * | 2013-05-27 | 2017-06-02 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A SILICON INGOT HAVING SYMMETRIC GRAIN SEALS |
FR3029941B1 (en) * | 2014-12-12 | 2019-10-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PAVING OF GERMS |
CN104911691B (en) * | 2015-04-15 | 2017-11-28 | 江西赛维Ldk太阳能高科技有限公司 | The preparation method and quasi-monocrystalline silicon of a kind of laying method of seed crystal, quasi-monocrystalline silicon |
CN106245113B (en) * | 2016-09-18 | 2018-10-19 | 江西赛维Ldk太阳能高科技有限公司 | A kind of polycrystal silicon ingot and preparation method thereof and polysilicon chip |
CN106757331B (en) * | 2016-12-16 | 2019-03-08 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of polycrystal silicon ingot and preparation method thereof |
CN109385662A (en) * | 2018-12-12 | 2019-02-26 | 赛维Ldk太阳能高科技(新余)有限公司 | The preparation method and class monocrystalline silicon piece of a kind of laying method of seed crystal, class monocrystal silicon |
CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005013410B4 (en) | 2005-03-23 | 2008-01-31 | Deutsche Solar Ag | Apparatus and method for crystallizing non-ferrous metals |
JP4887504B2 (en) * | 2005-07-04 | 2012-02-29 | 国立大学法人東北大学 | Grain boundary character control polycrystal production method |
CN101370969A (en) * | 2006-01-20 | 2009-02-18 | Bp北美公司 | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
KR101400075B1 (en) | 2006-01-20 | 2014-05-28 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
AU2008279415A1 (en) * | 2007-07-20 | 2009-01-29 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
KR20100050510A (en) | 2007-07-20 | 2010-05-13 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | Methods for manufacturing cast silicon from seed crystals |
DE102007035756B4 (en) | 2007-07-27 | 2010-08-05 | Deutsche Solar Ag | Process for the production of non-ferrous metal blocks |
DE102007038851A1 (en) * | 2007-08-16 | 2009-02-19 | Schott Ag | Process for the preparation of monocrystalline metal or semimetal bodies |
CN101654805B (en) * | 2009-09-24 | 2011-09-14 | 浙江大学 | Preparation method of casting polysilicon with large crystal grains in single crystal direction |
DE102010029741B4 (en) * | 2010-06-07 | 2013-02-28 | Solarworld Innovations Gmbh | Method for producing silicon wafers, silicon wafers and use of a silicon wafer as a silicon solar cell |
CN101935869B (en) * | 2010-09-17 | 2013-11-20 | 浙江大学 | Crucible and substrate slice for growing and casting monocrystalline silicon |
CN102242394A (en) * | 2011-06-15 | 2011-11-16 | 安阳市凤凰光伏科技有限公司 | Casting method for producing furnace feeding silicon material similar to monocrystalline silicon ingot and seed crystal placing method |
-
2011
- 2011-11-18 DE DE102011086669.8A patent/DE102011086669B4/en active Active
-
2012
- 2012-11-14 MY MYPI2012004935A patent/MY163711A/en unknown
- 2012-11-16 TW TW101142827A patent/TWI468560B/en not_active IP Right Cessation
- 2012-11-16 KR KR1020120130129A patent/KR101428213B1/en active IP Right Grant
- 2012-11-16 CN CN201210464754.3A patent/CN103122478B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101428213B1 (en) | 2014-08-07 |
CN103122478B (en) | 2016-02-17 |
KR20130055534A (en) | 2013-05-28 |
TWI468560B (en) | 2015-01-11 |
CN103122478A (en) | 2013-05-29 |
TW201326473A (en) | 2013-07-01 |
DE102011086669B4 (en) | 2016-08-04 |
DE102011086669A1 (en) | 2013-05-23 |
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