TW200711054A - A method of manufacturing a transistor and a method of forming a memory device - Google Patents

A method of manufacturing a transistor and a method of forming a memory device

Info

Publication number
TW200711054A
TW200711054A TW095132081A TW95132081A TW200711054A TW 200711054 A TW200711054 A TW 200711054A TW 095132081 A TW095132081 A TW 095132081A TW 95132081 A TW95132081 A TW 95132081A TW 200711054 A TW200711054 A TW 200711054A
Authority
TW
Taiwan
Prior art keywords
groove
plate
portions
transistor
manufacturing
Prior art date
Application number
TW095132081A
Other languages
English (en)
Inventor
Peng-Fei Wang
Joachim Nuetzel
Rolf Weis
Till Schloesser
Marc Strasser
Johannes Luyken Richard
Original Assignee
Qimonda Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qimonda Ag filed Critical Qimonda Ag
Publication of TW200711054A publication Critical patent/TW200711054A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095132081A 2005-09-09 2006-08-30 A method of manufacturing a transistor and a method of forming a memory device TW200711054A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/222,613 US7442609B2 (en) 2004-09-10 2005-09-09 Method of manufacturing a transistor and a method of forming a memory device with isolation trenches

Publications (1)

Publication Number Publication Date
TW200711054A true TW200711054A (en) 2007-03-16

Family

ID=37912979

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132081A TW200711054A (en) 2005-09-09 2006-08-30 A method of manufacturing a transistor and a method of forming a memory device

Country Status (6)

Country Link
US (1) US7442609B2 (zh)
JP (1) JP2007088458A (zh)
KR (1) KR100837915B1 (zh)
CN (1) CN1941301A (zh)
DE (1) DE102006041426B4 (zh)
TW (1) TW200711054A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI511268B (zh) * 2010-07-30 2015-12-01 Mosys Inc 具有邏輯和嵌入式金屬－絕緣體－金屬電容器之系統

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946696B2 (en) * 2002-12-23 2005-09-20 International Business Machines Corporation Self-aligned isolation double-gate FET
KR100678460B1 (ko) * 2004-10-12 2007-02-02 삼성전자주식회사 자기정렬 패턴들 사이에 배치된 채널부 홀의 형성방법들 및 이를 이용해서 게이트 패턴들을 갖는 반도체 장치의 형성방법들
TWI240989B (en) * 2005-01-17 2005-10-01 Powerchip Semiconductor Corp Method for forming trench gate dielectric layer
US7763513B2 (en) * 2005-09-09 2010-07-27 Qimonda Ag Integrated circuit device and method of manufacture
KR100720232B1 (ko) * 2005-12-30 2007-05-23 주식회사 하이닉스반도체 핀 구조의 반도체 소자의 형성방법
US7371645B2 (en) * 2005-12-30 2008-05-13 Infineon Technologies Ag Method of manufacturing a field effect transistor device with recessed channel and corner gate device
US20080012067A1 (en) * 2006-07-14 2008-01-17 Dongping Wu Transistor and memory cell array and methods of making the same
US7956387B2 (en) * 2006-09-08 2011-06-07 Qimonda Ag Transistor and memory cell array
KR100798774B1 (ko) * 2006-09-29 2008-01-29 주식회사 하이닉스반도체 반도체소자의 리세스게이트 제조 방법
US7595262B2 (en) * 2006-10-27 2009-09-29 Qimonda Ag Manufacturing method for an integrated semiconductor structure
US20080194068A1 (en) * 2007-02-13 2008-08-14 Qimonda Ag Method of manufacturing a 3-d channel field-effect transistor and an integrated circuit
US8735990B2 (en) * 2007-02-28 2014-05-27 International Business Machines Corporation Radiation hardened FinFET
US20080283910A1 (en) * 2007-05-15 2008-11-20 Qimonda Ag Integrated circuit and method of forming an integrated circuit
TWI343633B (en) * 2007-08-29 2011-06-11 Nanya Technology Corp Method of forming a self-aligned finfet structure
US8003522B2 (en) * 2007-12-19 2011-08-23 Fairchild Semiconductor Corporation Method for forming trenches with wide upper portion and narrow lower portion
JP5685917B2 (ja) 2010-12-10 2015-03-18 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2012253122A (ja) * 2011-06-01 2012-12-20 Elpida Memory Inc 半導体装置の製造方法、並びにデータ処理システム
US8742509B2 (en) 2012-03-01 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for FinFETs
US9559099B2 (en) 2012-03-01 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for FinFETs
US8835250B2 (en) 2012-09-13 2014-09-16 International Business Machines Corporation FinFET trench circuit
WO2014050590A1 (ja) * 2012-09-26 2014-04-03 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US20140103439A1 (en) * 2012-10-15 2014-04-17 Infineon Technologies Dresden Gmbh Transistor Device and Method for Producing a Transistor Device
CN105448917B (zh) * 2014-09-01 2019-03-29 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN107534044B (zh) * 2015-05-18 2022-02-11 英特尔公司 用于制造高密度存储器阵列的装置以及方法
US10014305B2 (en) 2016-11-01 2018-07-03 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US9761580B1 (en) 2016-11-01 2017-09-12 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US10319627B2 (en) * 2016-12-13 2019-06-11 Globalfoundries Inc. Air-gap spacers for field-effect transistors
US10062745B2 (en) 2017-01-09 2018-08-28 Micron Technology, Inc. Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistor
US9935114B1 (en) 2017-01-10 2018-04-03 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US9837420B1 (en) 2017-01-10 2017-12-05 Micron Technology, Inc. Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor
US9842839B1 (en) * 2017-01-12 2017-12-12 Micron Technology, Inc. Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above
US10600687B2 (en) * 2017-04-19 2020-03-24 Tokyo Electron Limited Process integration techniques using a carbon layer to form self-aligned structures
USD839240S1 (en) 2017-07-20 2019-01-29 Brandon Vinyard Mixer knob
US10048667B1 (en) 2017-07-20 2018-08-14 Brandon Vinyard Knob for an electric mixer
US10388658B1 (en) 2018-04-27 2019-08-20 Micron Technology, Inc. Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors
US10700072B2 (en) * 2018-10-18 2020-06-30 Applied Materials, Inc. Cap layer for bit line resistance reduction
CN111435658B (zh) * 2019-01-14 2023-05-23 联华电子股份有限公司 形成存储器堆叠结构的方法
CN112909071B (zh) * 2019-12-04 2024-06-07 长鑫存储技术有限公司 半导体结构及其制备方法
EP4181202A4 (en) 2020-09-29 2023-12-27 Changxin Memory Technologies, Inc. SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD THEREOF
CN113539972B (zh) * 2021-07-13 2023-10-27 长鑫存储技术有限公司 存储器及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582785A (ja) * 1991-09-20 1993-04-02 Sanyo Electric Co Ltd 半導体装置
JPH05167033A (ja) * 1991-12-12 1993-07-02 Hitachi Ltd 半導体装置、半導体記憶装置およびその製造方法
JP3306691B2 (ja) * 1994-02-25 2002-07-24 富士通株式会社 集積回路装置の配線方法
US5945707A (en) * 1998-04-07 1999-08-31 International Business Machines Corporation DRAM cell with grooved transfer device
JP2002118255A (ja) * 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
DE10038728A1 (de) * 2000-07-31 2002-02-21 Infineon Technologies Ag Halbleiterspeicher-Zellenanordnung und Verfahren zu deren Herstellung
JP4759819B2 (ja) * 2001-03-05 2011-08-31 ソニー株式会社 半導体装置の製造方法
GB0212564D0 (en) * 2002-05-31 2002-07-10 Koninkl Philips Electronics Nv Trench-gate semiconductor device
DE10314274B3 (de) 2003-03-29 2004-09-16 Infineon Technologies Ag Verfahren zum Herstellen einer Kontaktlochebene in einem Speicherbaustein
JP2004080000A (ja) 2003-06-09 2004-03-11 Toshiba Corp 半導体記憶装置の製造方法
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
DE102004031385B4 (de) 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
JP2006013328A (ja) * 2004-06-29 2006-01-12 Toshiba Corp 半導体装置
JP2006054431A (ja) * 2004-06-29 2006-02-23 Infineon Technologies Ag トランジスタ、メモリセルアレイ、および、トランジスタ製造方法
KR100608377B1 (ko) * 2005-05-02 2006-08-08 주식회사 하이닉스반도체 메모리 소자의 셀 트랜지스터 제조방법
US20070176253A1 (en) * 2006-01-31 2007-08-02 Peng-Fei Wang Transistor, memory cell and method of manufacturing a transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI511268B (zh) * 2010-07-30 2015-12-01 Mosys Inc 具有邏輯和嵌入式金屬－絕緣體－金屬電容器之系統

Also Published As

Publication number Publication date
DE102006041426A1 (de) 2007-05-03
US20060110884A1 (en) 2006-05-25
DE102006041426B4 (de) 2008-12-11
US7442609B2 (en) 2008-10-28
JP2007088458A (ja) 2007-04-05
CN1941301A (zh) 2007-04-04
KR100837915B1 (ko) 2008-06-13
KR20070029604A (ko) 2007-03-14

Similar Documents

Publication Publication Date Title
TW200711054A (en) A method of manufacturing a transistor and a method of forming a memory device
TW200742045A (en) Semiconductor device having a recess channel transistor
WO2010014128A3 (en) Normally-off semiconductor devices and methods of fabricating the same
TW200731530A (en) Semiconductor devices and methods for fabricating the same
TW200620489A (en) Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
WO2008105077A1 (ja) 化合物半導体装置とその製造方法
TW200633125A (en) Semiconductor device and method of semiconductor device
WO2013028685A3 (en) Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication
TW200635037A (en) Semiconductor device with increased channel length and method for fabricating the same
TW200638509A (en) Method for fabricating transistor of semiconductor device
TW200715566A (en) Display device and method of manufacturing the same
SG143124A1 (en) Semiconductor devices having pfet with sige gate electrode and embedded sige source/drain regions and methods of making the same
TW200639919A (en) Method of fabricating a transistor having a triple channel in a memory device
WO2007110832A3 (en) Trench-gate semiconductor device and method of fabrication thereof
WO2009063588A1 (ja) 半導体装置及びその製造方法
TW200633209A (en) Semiconductor device having transistor with vertical gate electrode and method of fabricating the same
TW200731362A (en) Resolving pattern-loading issues of SiGe stressor
WO2007053339A3 (en) Method for forming a semiconductor structure and structure thereof
TW200725745A (en) Method for forming semiconductor device having fin structure
TW200709415A (en) Gate pattern of semiconductor device and method for fabricating the same
TW200731509A (en) Semiconductor device and manufacturing method thereof
TW200717777A (en) Semiconductor memory device and manufacturing method thereof
TW200725882A (en) Five channel fin transistor and method for fabricating the same
TW200620640A (en) Image sensor with improved charge transfer efficiency and method for fabricating the same
EP1873838A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME