TW200705810A - Voltage regulation circuit and method for regulating voltage at an output pin of a circuit - Google Patents

Voltage regulation circuit and method for regulating voltage at an output pin of a circuit

Info

Publication number
TW200705810A
TW200705810A TW095119820A TW95119820A TW200705810A TW 200705810 A TW200705810 A TW 200705810A TW 095119820 A TW095119820 A TW 095119820A TW 95119820 A TW95119820 A TW 95119820A TW 200705810 A TW200705810 A TW 200705810A
Authority
TW
Taiwan
Prior art keywords
output
voltage
comparator
circuit
level
Prior art date
Application number
TW095119820A
Other languages
English (en)
Inventor
Gaetan Bracmard
Henri Bottaro
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of TW200705810A publication Critical patent/TW200705810A/zh

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31703Comparison aspects, e.g. signature analysis, comparators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31712Input or output aspects
    • G01R31/31713Input or output interfaces for test, e.g. test pins, buffers
TW095119820A 2005-06-06 2006-06-05 Voltage regulation circuit and method for regulating voltage at an output pin of a circuit TW200705810A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0505712A FR2886746B1 (fr) 2005-06-06 2005-06-06 Regulation du niveau de tension de sortie
US11/221,008 US7907002B2 (en) 2005-06-06 2005-09-07 Output level voltage regulation

Publications (1)

Publication Number Publication Date
TW200705810A true TW200705810A (en) 2007-02-01

Family

ID=36373078

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119820A TW200705810A (en) 2005-06-06 2006-06-05 Voltage regulation circuit and method for regulating voltage at an output pin of a circuit

Country Status (5)

Country Link
US (1) US7907002B2 (zh)
JP (1) JP5058158B2 (zh)
CN (1) CN101194216B (zh)
FR (1) FR2886746B1 (zh)
TW (1) TW200705810A (zh)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
TWI580984B (zh) * 2015-10-27 2017-05-01 力晶科技股份有限公司 電壓校正電路及電壓校正系統
US10559558B2 (en) 2017-09-29 2020-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Pin modification for standard cells

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JP2011053957A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
US8971387B2 (en) * 2009-10-09 2015-03-03 Intersil Americas LLC System and method for providing a full fail-safe capability in signal transmission networks
CN102496381B (zh) * 2011-11-18 2015-04-01 深圳芯邦科技股份有限公司 调整上电电压的方法及装置、上电复位单元、芯片
TWI503644B (zh) 2012-10-05 2015-10-11 Faraday Tech Corp 電壓調節器校正電路
US9461539B2 (en) * 2013-03-15 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-calibrated voltage regulator
JP6122720B2 (ja) * 2013-07-17 2017-04-26 ルネサスエレクトロニクス株式会社 電源電圧遷移照合回路、電源電圧遷移照合方法、及び半導体集積回路
US9704581B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Voltage ramping detection
US9665298B2 (en) * 2015-04-21 2017-05-30 Sandisk Technologies Llc Method and system to reduce power usage on an I/O interface
KR102324194B1 (ko) * 2017-05-22 2021-11-10 삼성전자주식회사 안티퓨즈들을 포함하는 전압 트리밍 회로, 그것의 동작 방법, 그리고 그 전압 트리밍 회로를 포함하는 집적 회로
US20200136505A1 (en) * 2018-10-26 2020-04-30 Nxp B.V. Switched resistor dc-dc converter
CN114815943B (zh) * 2022-03-31 2023-03-24 深圳市迪浦电子有限公司 校正修调电路及集成电路
US11908539B2 (en) * 2022-05-31 2024-02-20 Nanya Technology Corporation Voltage regulator for providing word line voltage

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JP4212309B2 (ja) * 2002-07-01 2009-01-21 株式会社ルネサステクノロジ 半導体集積回路
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US6861895B1 (en) * 2003-06-17 2005-03-01 Xilinx Inc High voltage regulation circuit to minimize voltage overshoot
KR20080017444A (ko) 2005-06-06 2008-02-26 아트멜 코포레이숀 출력 레벨 전압 조정

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI580984B (zh) * 2015-10-27 2017-05-01 力晶科技股份有限公司 電壓校正電路及電壓校正系統
US10559558B2 (en) 2017-09-29 2020-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Pin modification for standard cells
TWI687826B (zh) * 2017-09-29 2020-03-11 台灣積體電路製造股份有限公司 標準單元之接腳修改
US11037920B2 (en) 2017-09-29 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Pin modification for standard cells
US11637098B2 (en) 2017-09-29 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pin modification for standard cells

Also Published As

Publication number Publication date
FR2886746B1 (fr) 2007-08-10
CN101194216B (zh) 2012-12-19
JP5058158B2 (ja) 2012-10-24
US7907002B2 (en) 2011-03-15
JP2009510802A (ja) 2009-03-12
CN101194216A (zh) 2008-06-04
FR2886746A1 (fr) 2006-12-08
US20060273847A1 (en) 2006-12-07

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