TW200733556A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
TW200733556A
TW200733556A TW095142072A TW95142072A TW200733556A TW 200733556 A TW200733556 A TW 200733556A TW 095142072 A TW095142072 A TW 095142072A TW 95142072 A TW95142072 A TW 95142072A TW 200733556 A TW200733556 A TW 200733556A
Authority
TW
Taiwan
Prior art keywords
circuit
current
power switch
output transistor
internal
Prior art date
Application number
TW095142072A
Other languages
Chinese (zh)
Inventor
Takayasu Ito
Mitsuru Hiraki
Satoshi Baba
Kenichi Fukui
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200733556A publication Critical patent/TW200733556A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

In order to set with a high precision the value of rush current flowing in the power switch circuit at the time of turning "on" the power, the internal circuit Int_Cir of the LSI is supplied with the internal source voltage Vint from the output transistor MP 1 of the regulator Vreg of the power switch circuit PSWC. The power switch circuit PSWC includes a control circuit CNTRLR and a start-up circuit STC. During the initial period Tint following the turning "on" of the power supply, the start-up circuit STC controls the output transistor MP 1 and reduces the primary rush current so that the output current Isup of the output transistor MP 1 may represent an approximately constant increment as the time passes. The difference DeltaV between the internal current voltage due to the charge of load capacitance C with the output current Isup controlled by the start-up circuit STC and the current voltage Vint from the regulator Vreg is set within the predetermined limit to reduce the secondary rush current.
TW095142072A 2005-12-28 2006-11-14 Semiconductor integrated circuit TW200733556A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005377570A JP4812085B2 (en) 2005-12-28 2005-12-28 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
TW200733556A true TW200733556A (en) 2007-09-01

Family

ID=38192829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142072A TW200733556A (en) 2005-12-28 2006-11-14 Semiconductor integrated circuit

Country Status (5)

Country Link
US (2) US7450361B2 (en)
JP (1) JP4812085B2 (en)
KR (1) KR20070070099A (en)
CN (1) CN1991659A (en)
TW (1) TW200733556A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386651B (en) * 2007-09-04 2013-02-21 Advantest Corp Power source stabilizing circuit, electronic device and testing instrument
TWI574507B (en) * 2011-06-29 2017-03-11 英特爾股份有限公司 Low-power, low-latency power-gate apparatus and method
TWI642952B (en) * 2013-08-27 2018-12-01 美商賽諾西斯公司 Circuit and method for negative bias thermal instability stress testing of transistors

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JP2009011045A (en) * 2007-06-27 2009-01-15 Nec Electronics Corp Switching regulator and direct-current voltage conversion method
FR2919446B1 (en) * 2007-07-27 2009-12-18 Commissariat Energie Atomique QUICK RESPONSE POWER SUPPLY SWITCHING DEVICE AND POWER SUPPLY NETWORK COMPRISING SUCH A SWITCH.
JP5173310B2 (en) * 2007-08-03 2013-04-03 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit
KR100870429B1 (en) * 2007-08-30 2008-11-25 주식회사 하이닉스반도체 Internal voltage generating circuit
US7646234B2 (en) * 2007-09-20 2010-01-12 Qimonda Ag Integrated circuit and method of generating a bias signal for a data signal receiver
JPWO2009041010A1 (en) 2007-09-27 2011-01-13 パナソニック株式会社 Semiconductor integrated circuit device, communication device, information reproducing device, image display device, electronic device, electronic control device, and moving body
JP5211889B2 (en) 2008-06-25 2013-06-12 富士通株式会社 Semiconductor integrated circuit
US8710903B2 (en) * 2008-06-30 2014-04-29 Intel Corporation Drive and startup for a switched capacitor divider
JP2010232848A (en) * 2009-03-26 2010-10-14 Oki Semiconductor Co Ltd Start-up circuit of internal power supply of semiconductor memory
JP2010278277A (en) * 2009-05-29 2010-12-09 Elpida Memory Inc Internal power supply circuit, semiconductor device, and method of manufacturing the semiconductor device
JP5293816B2 (en) 2009-06-17 2013-09-18 富士通オプティカルコンポーネンツ株式会社 Circuit module
JP5458825B2 (en) 2009-07-10 2014-04-02 富士通株式会社 Voltage regulator circuit
JP5504783B2 (en) * 2009-09-18 2014-05-28 ヤマハ株式会社 Charge pump
KR101169354B1 (en) 2011-08-17 2012-07-30 테세라, 인코포레이티드 Power boosting circuit for semiconductor packaging
JP2013059206A (en) * 2011-09-08 2013-03-28 Ricoh Co Ltd Charging circuit and control method therefor
US8912853B2 (en) * 2012-06-14 2014-12-16 Apple Inc. Dynamic level shifter circuit and ring oscillator using the same
EP2701294B1 (en) * 2012-08-24 2017-11-08 Dialog Semiconductor GmbH Low current start up including power switch
CN102882362B (en) * 2012-10-12 2014-09-17 西安三馀半导体有限公司 Multi-operating-mode charge pump overshoot current limiting device
US9727073B1 (en) * 2012-10-17 2017-08-08 Marvell International Ltd. Precision current source with programmable slew rate control
JP6228769B2 (en) 2013-07-11 2017-11-08 ローム株式会社 Power circuit
KR20150014681A (en) * 2013-07-30 2015-02-09 에스케이하이닉스 주식회사 Current generating circuit and semiconductor device having the same and memory system having the same
KR101601214B1 (en) * 2014-11-11 2016-03-08 현대자동차주식회사 Biasing circuit for microphone and microphone comprising the same
CN104467104A (en) * 2014-12-18 2015-03-25 江苏天安智联科技股份有限公司 Vehicle-mounted USB intelligent charging device
JP2016127573A (en) * 2015-01-08 2016-07-11 株式会社東芝 Analog switch and multiplexer
EP3644157B1 (en) * 2018-10-24 2022-12-14 Sciosense B.V. Electric circuit arrangement to control current generation
CN109450421B (en) * 2018-12-17 2023-09-01 上海艾为电子技术股份有限公司 Analog switch starting circuit and method
CN111370038B (en) * 2018-12-25 2022-05-10 北京兆易创新科技股份有限公司 Circuit for controlling voltage of drain terminal
JP7228389B2 (en) * 2019-01-23 2023-02-24 ルネサスエレクトロニクス株式会社 Semiconductor equipment and semiconductor systems
US11031933B2 (en) 2019-02-22 2021-06-08 Texas Instruments Incorporated Enhancement mode startup circuit with JFET emulation
US10902907B1 (en) * 2019-10-02 2021-01-26 Micron Technology, Inc. Output drivers, and related methods, memory devices, and systems
US10782717B1 (en) * 2019-10-18 2020-09-22 Texas Instruments Incorporated Jitter compensation in integrated circuit devices
US11942779B2 (en) * 2019-10-30 2024-03-26 Skyworks Solutions, Inc. Shutdown mode for bandgap and bias circuit with voltage comparator to reduce leakage current

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JP3666383B2 (en) * 2000-11-13 2005-06-29 株式会社デンソー Voltage regulator
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TW200417119A (en) * 2003-02-18 2004-09-01 Aimtron Technology Corp Error amplifier, DC voltage conversion circuit and method thereof
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JP4632655B2 (en) * 2003-11-07 2011-02-16 日本電気株式会社 Luminescent display device
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386651B (en) * 2007-09-04 2013-02-21 Advantest Corp Power source stabilizing circuit, electronic device and testing instrument
TWI574507B (en) * 2011-06-29 2017-03-11 英特爾股份有限公司 Low-power, low-latency power-gate apparatus and method
TWI642952B (en) * 2013-08-27 2018-12-01 美商賽諾西斯公司 Circuit and method for negative bias thermal instability stress testing of transistors

Also Published As

Publication number Publication date
CN1991659A (en) 2007-07-04
US7450361B2 (en) 2008-11-11
JP2007179345A (en) 2007-07-12
US20070145922A1 (en) 2007-06-28
US7652863B2 (en) 2010-01-26
KR20070070099A (en) 2007-07-03
US20090039846A1 (en) 2009-02-12
JP4812085B2 (en) 2011-11-09

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