TW200705118A - Surface treating method and film pattern forming method - Google Patents

Surface treating method and film pattern forming method

Info

Publication number
TW200705118A
TW200705118A TW095133904A TW95133904A TW200705118A TW 200705118 A TW200705118 A TW 200705118A TW 095133904 A TW095133904 A TW 095133904A TW 95133904 A TW95133904 A TW 95133904A TW 200705118 A TW200705118 A TW 200705118A
Authority
TW
Taiwan
Prior art keywords
film pattern
pattern forming
surface treating
substrate
forming method
Prior art date
Application number
TW095133904A
Other languages
English (en)
Inventor
Toshimitsu Hirai
Hironori Hasei
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200705118A publication Critical patent/TW200705118A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/26—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole with folded element or elements, the folded parts being spaced apart a small fraction of operating wavelength
    • H01Q9/27—Spiral antennas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095133904A 2002-03-27 2003-03-25 Surface treating method and film pattern forming method TW200705118A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002089810 2002-03-27
JP2003063366A JP2004006700A (ja) 2002-03-27 2003-03-10 表面処理方法、表面処理基板、膜パターンの形成方法、電気光学装置の製造方法、電気光学装置、及び電子機器

Publications (1)

Publication Number Publication Date
TW200705118A true TW200705118A (en) 2007-02-01

Family

ID=29552247

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095133904A TW200705118A (en) 2002-03-27 2003-03-25 Surface treating method and film pattern forming method
TW092106671A TW200307765A (en) 2002-03-27 2003-03-25 Surface treatment method, surface treatment substrate, method for forming film pattern, method for producing photoelectric device, photoelectric device, electronic machine

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW092106671A TW200307765A (en) 2002-03-27 2003-03-25 Surface treatment method, surface treatment substrate, method for forming film pattern, method for producing photoelectric device, photoelectric device, electronic machine

Country Status (5)

Country Link
US (1) US6861377B1 (zh)
JP (1) JP2004006700A (zh)
KR (1) KR100550024B1 (zh)
CN (1) CN1261973C (zh)
TW (2) TW200705118A (zh)

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JP5116212B2 (ja) * 2004-03-19 2013-01-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7572718B2 (en) * 2004-04-19 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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CA2588566A1 (en) * 2004-12-17 2006-06-22 Bionovo, Inc. Estrogenic extracts of morus alba and uses thereof
JP4151652B2 (ja) * 2005-01-11 2008-09-17 セイコーエプソン株式会社 識別コード描画方法
JP2006245544A (ja) * 2005-01-28 2006-09-14 Semiconductor Energy Lab Co Ltd パターン付基板及びその形成方法、並びに半導体装置及びその作製方法
US7915058B2 (en) * 2005-01-28 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
JP4179288B2 (ja) * 2005-02-01 2008-11-12 セイコーエプソン株式会社 膜パターン形成方法
CN100439986C (zh) * 2005-02-23 2008-12-03 精工爱普生株式会社 膜图案的形成方法和器件的制法、电光学装置和电子仪器
JP4297106B2 (ja) * 2005-02-23 2009-07-15 セイコーエプソン株式会社 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
JP2006332592A (ja) 2005-04-28 2006-12-07 Ricoh Co Ltd 電気部品、導電パターンの形成方法、およびインクジェットヘッド
JP4556838B2 (ja) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 バンクの形成方法および膜パターンの形成方法
JP4200983B2 (ja) * 2005-05-24 2008-12-24 セイコーエプソン株式会社 膜パターンの形成方法、アクティブマトリクス基板、電気光学装置、及び電子機器
KR100763348B1 (ko) * 2006-04-11 2007-10-04 삼성전기주식회사 기판의 전처리 방법
JP2010538160A (ja) * 2007-08-31 2010-12-09 ゼタコア インコーポレイテッド 興味ある分子の結合を促進するための表面処理方法、該方法により形成されたコーティングおよび装置
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
WO2011123124A1 (en) * 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
JP2010040238A (ja) * 2008-08-01 2010-02-18 Panasonic Corp プラズマディスプレイパネルの製造方法
SG182208A1 (en) * 2008-12-15 2012-07-30 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
JP5510126B2 (ja) 2009-08-12 2014-06-04 Ｊｎｃ株式会社 表面処理剤
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
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US8834462B2 (en) 2010-06-01 2014-09-16 Covidien Lp System and method for sensing tissue characteristics
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Also Published As

Publication number Publication date
KR100550024B1 (ko) 2006-02-09
JP2004006700A (ja) 2004-01-08
CN1261973C (zh) 2006-06-28
TWI312377B (zh) 2009-07-21
KR20030078001A (ko) 2003-10-04
US6861377B1 (en) 2005-03-01
TW200307765A (en) 2003-12-16
CN1459824A (zh) 2003-12-03

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