TW200703616A - Stacked type semiconductor device - Google Patents

Stacked type semiconductor device

Info

Publication number
TW200703616A
TW200703616A TW095112437A TW95112437A TW200703616A TW 200703616 A TW200703616 A TW 200703616A TW 095112437 A TW095112437 A TW 095112437A TW 95112437 A TW95112437 A TW 95112437A TW 200703616 A TW200703616 A TW 200703616A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
type semiconductor
stacked type
row
connecting terminals
Prior art date
Application number
TW095112437A
Other languages
English (en)
Inventor
Mitsuaki Katagiri
Masanori Shibamoto
Tsutomu Hara
Koichiro Aoki
Naoya Kanda
Shuji Kikuchi
Hisashi Tanie
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Publication of TW200703616A publication Critical patent/TW200703616A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01D—HARVESTING; MOWING
    • A01D23/00—Topping machines
    • A01D23/04—Topping machines cutting the tops after being lifted
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06579—TAB carriers; beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Dram (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Memories (AREA)
TW095112437A 2005-04-08 2006-04-07 Stacked type semiconductor device TW200703616A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005112902A JP4237160B2 (ja) 2005-04-08 2005-04-08 積層型半導体装置

Publications (1)

Publication Number Publication Date
TW200703616A true TW200703616A (en) 2007-01-16

Family

ID=37064253

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112437A TW200703616A (en) 2005-04-08 2006-04-07 Stacked type semiconductor device

Country Status (5)

Country Link
US (1) US20060249829A1 (zh)
JP (1) JP4237160B2 (zh)
KR (1) KR100805019B1 (zh)
CN (1) CN100464419C (zh)
TW (1) TW200703616A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700809B (zh) * 2011-03-16 2020-08-01 日商東芝記憶體股份有限公司 半導體裝置

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JP4400506B2 (ja) * 2005-04-28 2010-01-20 エルピーダメモリ株式会社 半導体装置及びその製造方法、並びに、回路基板の接続方法
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
KR100825793B1 (ko) * 2006-11-10 2008-04-29 삼성전자주식회사 배선을 구비하는 배선 필름, 상기 배선 필름을 구비하는반도체 패키지 및 상기 반도체 패키지의 제조방법
US7952195B2 (en) 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
KR101458538B1 (ko) 2007-07-27 2014-11-07 테세라, 인코포레이티드 적층형 마이크로 전자 유닛, 및 이의 제조방법
CN101861646B (zh) * 2007-08-03 2015-03-18 泰塞拉公司 利用再生晶圆的堆叠封装
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
JP5543071B2 (ja) * 2008-01-21 2014-07-09 ピーエスフォー ルクスコ エスエイアールエル 半導体装置およびこれを有する半導体モジュール
JP2009182104A (ja) * 2008-01-30 2009-08-13 Toshiba Corp 半導体パッケージ
JP2009194143A (ja) * 2008-02-14 2009-08-27 Elpida Memory Inc 半導体装置
CN102067310B (zh) 2008-06-16 2013-08-21 泰塞拉公司 带有边缘触头的晶片级芯片规模封装的堆叠及其制造方法
US8298914B2 (en) * 2008-08-19 2012-10-30 International Business Machines Corporation 3D integrated circuit device fabrication using interface wafer as permanent carrier
JP2010056099A (ja) * 2008-08-26 2010-03-11 Hitachi Ltd 半導体装置
US8344491B2 (en) * 2008-12-31 2013-01-01 Micron Technology, Inc. Multi-die building block for stacked-die package
EP2406821A2 (en) 2009-03-13 2012-01-18 Tessera, Inc. Stacked microelectronic assemblies having vias extending through bond pads
US9013040B1 (en) * 2009-04-10 2015-04-21 Sanmina Corporation Memory device with die stacking and heat dissipation
KR101312045B1 (ko) * 2011-05-18 2013-09-25 크루셜텍 (주) 엘이디 어레이
JP2014049501A (ja) * 2012-08-29 2014-03-17 Renesas Electronics Corp 半導体装置の製造方法
KR101305518B1 (ko) * 2013-02-13 2013-09-06 주식회사 기가레인 인쇄회로기판을 이용한 고주파 전송선로를 구비한 단말기
RU2703831C1 (ru) * 2019-03-01 2019-10-22 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Способ электрического и механического соединения плат и интерпозеров в 3D электронных сборках
CN110829282A (zh) * 2019-11-29 2020-02-21 天津电力机车有限公司 一种端子排布线定位装置
KR20220039385A (ko) * 2020-09-22 2022-03-29 삼성전자주식회사 인터포저 및 이를 포함하는 반도체 패키지
CN114501791A (zh) * 2020-11-12 2022-05-13 荣耀终端有限公司 电路板组件及电子设备
KR20230009732A (ko) * 2021-07-09 2023-01-17 삼성전자주식회사 균형 배선 구조를 갖는 반도체 패키지

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700809B (zh) * 2011-03-16 2020-08-01 日商東芝記憶體股份有限公司 半導體裝置

Also Published As

Publication number Publication date
CN1845325A (zh) 2006-10-11
JP4237160B2 (ja) 2009-03-11
CN100464419C (zh) 2009-02-25
KR20060107400A (ko) 2006-10-13
US20060249829A1 (en) 2006-11-09
JP2006294824A (ja) 2006-10-26
KR100805019B1 (ko) 2008-02-20

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