TW200637032A - Adapting short-wavelength led's for polychromatic, broadband, or "white" emission - Google Patents
Adapting short-wavelength led's for polychromatic, broadband, or "white" emissionInfo
- Publication number
- TW200637032A TW200637032A TW094138508A TW94138508A TW200637032A TW 200637032 A TW200637032 A TW 200637032A TW 094138508 A TW094138508 A TW 094138508A TW 94138508 A TW94138508 A TW 94138508A TW 200637032 A TW200637032 A TW 200637032A
- Authority
- TW
- Taiwan
- Prior art keywords
- white
- led
- polychromatic
- broadband
- emission
- Prior art date
Links
- 238000010276 construction Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 238000005286 illumination Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/009,217 US7402831B2 (en) | 2004-12-09 | 2004-12-09 | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200637032A true TW200637032A (en) | 2006-10-16 |
Family
ID=35954099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094138508A TW200637032A (en) | 2004-12-09 | 2005-11-03 | Adapting short-wavelength led's for polychromatic, broadband, or "white" emission |
Country Status (7)
Country | Link |
---|---|
US (5) | US7402831B2 (zh) |
EP (1) | EP1831934A1 (zh) |
JP (1) | JP5059617B2 (zh) |
KR (1) | KR20070093092A (zh) |
CN (1) | CN100490194C (zh) |
TW (1) | TW200637032A (zh) |
WO (1) | WO2006062588A1 (zh) |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7179670B2 (en) * | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
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US7674641B2 (en) * | 2006-04-12 | 2010-03-09 | Atomic Energy Council | Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots |
US7952110B2 (en) | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
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US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
CA2665047A1 (en) | 2006-09-29 | 2008-04-10 | University Of Florida Research Foundation, Inc. | Method and apparatus for infrared detection and display |
US20080149951A1 (en) * | 2006-12-22 | 2008-06-26 | Industrial Technology Research Institute | Light emitting device |
CN101627482A (zh) * | 2007-03-08 | 2010-01-13 | 3M创新有限公司 | 发光元件阵列 |
TWI404228B (zh) * | 2007-07-12 | 2013-08-01 | Epistar Corp | 半導體發光裝置與其製造方法 |
WO2009048704A2 (en) * | 2007-10-08 | 2009-04-16 | 3M Innovative Properties Company | Light emitting diode with bonded semiconductor wavelength converter |
CN101939855B (zh) * | 2007-12-10 | 2013-10-30 | 3M创新有限公司 | 半导体发光装置及其制造方法 |
WO2009075972A2 (en) * | 2007-12-10 | 2009-06-18 | 3M Innovative Properties Company | Down-converted light emitting diode with simplified light extraction |
US8338838B2 (en) * | 2007-12-28 | 2012-12-25 | 3M Innovative Properties Company | Down-converted light source with uniform wavelength emission |
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ES2379147T3 (es) * | 2008-01-31 | 2012-04-23 | Koninklijke Philips Electronics N.V. | Dispositivo emisor de luz |
CN101952967A (zh) * | 2008-02-22 | 2011-01-19 | 皇家飞利浦电子股份有限公司 | 双面有机发光二极管(oled) |
JP2011523212A (ja) * | 2008-06-05 | 2011-08-04 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体波長変換器が接合された発光ダイオード |
FR2932608B1 (fr) * | 2008-06-13 | 2011-04-22 | Centre Nat Rech Scient | Procede de croissance de nitrure d'elements du groupe iii. |
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JP2010062201A (ja) * | 2008-09-01 | 2010-03-18 | Sony Corp | 半導体発光素子およびその製造方法 |
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CN101621103B (zh) * | 2009-07-31 | 2011-05-11 | 苏州纳维科技有限公司 | 发光二极管及其生长方法 |
JP2013510445A (ja) * | 2009-11-09 | 2013-03-21 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体の異方性エッチングプロセス |
JP5723377B2 (ja) * | 2009-11-09 | 2015-05-27 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体のためのエッチングプロセス |
KR20120092673A (ko) * | 2009-11-18 | 2012-08-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Ⅱ-ⅵ족 반도체를 위한 신규한 습식 에칭제 및 방법 |
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WO2012021196A2 (en) | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method for manufacturing electronic devices and electronic devices thereof |
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CN102906886B (zh) | 2010-05-24 | 2016-11-23 | 佛罗里达大学研究基金会公司 | 用于在红外上转换装置上提供电荷阻挡层的方法和设备 |
WO2011153153A1 (en) * | 2010-06-04 | 2011-12-08 | 3M Innovative Properties Company | Multicolored light converting led with minimal absorption |
GB2484711A (en) * | 2010-10-21 | 2012-04-25 | Optovate Ltd | Illumination Apparatus |
WO2012067766A2 (en) | 2010-11-18 | 2012-05-24 | 3M Innovative Properties Company | Light emitting diode component comprising polysilazane bonding layer |
DE102011014845B4 (de) * | 2011-03-23 | 2023-05-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils |
CN106025099B (zh) | 2011-04-12 | 2018-09-07 | 精工爱普生株式会社 | 发光元件、发光装置、认证装置以及电子设备 |
JP5765034B2 (ja) | 2011-04-18 | 2015-08-19 | セイコーエプソン株式会社 | チアジアゾール系化合物、発光素子用化合物、発光素子、発光装置、認証装置および電子機器 |
RU2014102650A (ru) | 2011-06-30 | 2015-08-10 | Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. | Усиливающий инфракрасный фотодетектор и его применение для обнаружения ик-излучения |
KR20130018547A (ko) | 2011-08-09 | 2013-02-25 | 세이코 엡슨 가부시키가이샤 | 티아디아졸계 화합물, 발광 소자, 발광 장치, 인증 장치, 전자 기기 |
JP5790279B2 (ja) | 2011-08-09 | 2015-10-07 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
US9331252B2 (en) | 2011-08-23 | 2016-05-03 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
US8975614B2 (en) * | 2011-08-23 | 2015-03-10 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
JP5970811B2 (ja) * | 2011-12-28 | 2016-08-17 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
US9324952B2 (en) | 2012-02-28 | 2016-04-26 | Seiko Epson Corporation | Thiadiazole, compound for light-emitting elements, light-emitting element, light-emitting apparatus, authentication apparatus, and electronic device |
CN107011365A (zh) | 2012-10-18 | 2017-08-04 | 精工爱普生株式会社 | 噻二唑系化合物、发光元件用化合物、发光元件、发光装置、认证装置以及电子设备 |
FR3003402B1 (fr) | 2013-03-14 | 2016-11-04 | Centre Nat Rech Scient | Dispositif monolithique emetteur de lumiere. |
WO2015156891A2 (en) | 2014-01-23 | 2015-10-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
WO2017034644A2 (en) | 2015-06-09 | 2017-03-02 | ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY | Method of providing an electronic device and electronic device thereof |
US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
FR3019380B1 (fr) * | 2014-04-01 | 2017-09-01 | Centre Nat Rech Scient | Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication |
KR102466741B1 (ko) | 2014-05-13 | 2022-11-15 | 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 | 전자 디바이스를 제공하는 방법 |
DE102014107472A1 (de) * | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Beleuchtungsvorrichtung |
US10446582B2 (en) | 2014-12-22 | 2019-10-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an imaging system and imaging system thereof |
US9741742B2 (en) | 2014-12-22 | 2017-08-22 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Deformable electronic device and methods of providing and using deformable electronic device |
DE102015105693B4 (de) * | 2015-04-14 | 2021-05-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements |
CA2988784A1 (en) | 2015-06-11 | 2017-03-09 | University Of Florida Research Foundation, Incorporated | Monodisperse, ir-absorbing nanoparticles and related methods and devices |
US10136123B2 (en) | 2015-10-30 | 2018-11-20 | Disney Enterprises, Inc. | Display system with normalized show lighting for wavelength multiplex visualization (WMV) environment |
DE102015119817A1 (de) * | 2015-11-17 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement |
DE102017103856A1 (de) * | 2017-02-24 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
FR3066045A1 (fr) * | 2017-05-02 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente comprenant des couches de conversion en longueur d'onde |
US11100844B2 (en) | 2018-04-25 | 2021-08-24 | Raxium, Inc. | Architecture for light emitting elements in a light field display |
DE102018124473A1 (de) * | 2018-10-04 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil, verfahren zur ansteuerung eines optoelektronischen bauteils und beleuchtungsvorrichtung |
JP7414419B2 (ja) * | 2019-07-30 | 2024-01-16 | キヤノン株式会社 | 発光素子及び発光素子の製造方法 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US42861A (en) * | 1864-05-24 | Improvement in machinery for winding conical bobbins | ||
US4527179A (en) | 1981-02-09 | 1985-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-crystal light emitting semiconductor device |
FR2538171B1 (fr) * | 1982-12-21 | 1986-02-28 | Thomson Csf | Diode electroluminescente a emission de surface |
US4688068A (en) | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
JPH06244506A (ja) | 1993-02-19 | 1994-09-02 | Sony Corp | 半導体表示装置及びその製造方法 |
US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
JPH06268331A (ja) * | 1993-03-11 | 1994-09-22 | Toshiba Corp | 半導体発光装置 |
JP2991616B2 (ja) | 1994-06-30 | 1999-12-20 | シャープ株式会社 | 半導体発光素子 |
US5646419A (en) | 1995-04-07 | 1997-07-08 | California Institute Of Technology | n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same |
DE19542241C2 (de) | 1995-11-13 | 2003-01-09 | Siemens Ag | Optoelektronisches Bauelement in II-VI-Halbleitermaterial |
JPH09181398A (ja) * | 1995-12-25 | 1997-07-11 | Sony Corp | 半導体発光素子 |
US5889295A (en) | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
DE19703615A1 (de) | 1997-01-31 | 1998-08-06 | Siemens Ag | Optoelektronisches Halbleiterbauelement |
DE19729396A1 (de) | 1997-07-09 | 1999-01-14 | Siemens Ag | Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes |
US6214116B1 (en) | 1998-01-17 | 2001-04-10 | Hanvac Corporation | Horizontal reactor for compound semiconductor growth |
JP3559446B2 (ja) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
US6294795B1 (en) | 1998-04-28 | 2001-09-25 | Canare Electric Co., Ltd. | Light-receiving device with quantum-wave interference layers |
TW406442B (en) | 1998-07-09 | 2000-09-21 | Sumitomo Electric Industries | White colored LED and intermediate colored LED |
US6252896B1 (en) | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
US6303404B1 (en) | 1999-05-28 | 2001-10-16 | Yong Tae Moon | Method for fabricating white light emitting diode using InGaN phase separation |
AU5463700A (en) * | 1999-06-04 | 2000-12-28 | Trustees Of Boston University | Photon recycling semiconductor multi-wavelength light-emitting diodes |
DE19952932C1 (de) | 1999-11-03 | 2001-05-03 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit breitbandiger Anregung |
US6504171B1 (en) | 2000-01-24 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Chirped multi-well active region LED |
JP3486900B2 (ja) | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
WO2001066997A2 (en) | 2000-03-06 | 2001-09-13 | Teledyne Lighting And Display Products, Inc. | Lighting apparatus having quantum dot layer |
TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
JP4008656B2 (ja) * | 2000-12-27 | 2007-11-14 | 株式会社東芝 | 半導体発光装置 |
JP4559661B2 (ja) | 2000-05-19 | 2010-10-13 | アイシン・エーアイ株式会社 | 手動変速機 |
KR100382481B1 (ko) | 2000-06-09 | 2003-05-01 | 엘지전자 주식회사 | 백색 발광 다이오드 소자 및 그 제조 방법 |
DE10036940A1 (de) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
JP2002217456A (ja) | 2001-01-19 | 2002-08-02 | Ngk Insulators Ltd | 半導体発光素子 |
JP2002222989A (ja) | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
US6711194B2 (en) | 2001-02-08 | 2004-03-23 | The Furukawa Electric Co., Ltd. | High output power semiconductor laser diode |
KR100422944B1 (ko) | 2001-05-31 | 2004-03-12 | 삼성전기주식회사 | 반도체 엘이디(led) 소자 |
AUPR551201A0 (en) * | 2001-06-01 | 2001-07-12 | Garvan Institute Of Medical Research | Neuronal cell-specific promoter |
JP3791765B2 (ja) * | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
US6837605B2 (en) * | 2001-11-28 | 2005-01-04 | Osram Opto Semiconductors Gmbh | Led illumination system |
US6711195B2 (en) | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
US6831306B1 (en) * | 2002-03-06 | 2004-12-14 | Daktronics, Inc. | Extended length light emitting diode |
CA2427559A1 (en) * | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
JP2004047748A (ja) | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | 発光ダイオード |
JP2004072047A (ja) | 2002-08-09 | 2004-03-04 | Sumitomo Electric Ind Ltd | 白色発光素子、白色発光素子用基板および白色発光素子用基板の製造方法 |
US6791104B2 (en) | 2002-09-26 | 2004-09-14 | Wisconsin Alumni Research Foundation | Type II quantum well optoelectronic devices |
MY149573A (en) | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
TW591811B (en) * | 2003-01-02 | 2004-06-11 | Epitech Technology Corp Ltd | Color mixing light emitting diode |
JP3717480B2 (ja) * | 2003-01-27 | 2005-11-16 | ローム株式会社 | 半導体発光装置 |
TWI289937B (en) * | 2003-03-04 | 2007-11-11 | Topco Scient Co Ltd | White light LED |
EP1475835A3 (en) | 2003-04-14 | 2004-12-15 | Epitech Corporation, Ltd. | Color mixing light emitting diode |
US7126160B2 (en) | 2004-06-18 | 2006-10-24 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
US7223998B2 (en) * | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
US20060081858A1 (en) | 2004-10-14 | 2006-04-20 | Chung-Hsiang Lin | Light emitting device with omnidirectional reflectors |
US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
US9018619B2 (en) | 2006-10-09 | 2015-04-28 | Cree, Inc. | Quantum wells for light conversion |
-
2004
- 2004-12-09 US US11/009,217 patent/US7402831B2/en not_active Expired - Fee Related
-
2005
- 2005-10-18 EP EP05810227A patent/EP1831934A1/en not_active Withdrawn
- 2005-10-18 KR KR1020077015504A patent/KR20070093092A/ko not_active Application Discontinuation
- 2005-10-18 JP JP2007545453A patent/JP5059617B2/ja not_active Expired - Fee Related
- 2005-10-18 CN CNB200580042502XA patent/CN100490194C/zh not_active Expired - Fee Related
- 2005-10-18 WO PCT/US2005/037648 patent/WO2006062588A1/en active Application Filing
- 2005-11-03 TW TW094138508A patent/TW200637032A/zh unknown
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2006
- 2006-10-27 US US11/553,784 patent/US7737430B2/en not_active Expired - Fee Related
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2008
- 2008-07-14 US US12/172,549 patent/US7700938B2/en not_active Expired - Fee Related
- 2008-07-16 US US12/174,087 patent/US7700939B2/en not_active Expired - Fee Related
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2010
- 2010-03-02 US US12/715,957 patent/US7902543B2/en not_active Expired - Fee Related
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WO2006062588A1 (en) | 2006-06-15 |
KR20070093092A (ko) | 2007-09-17 |
EP1831934A1 (en) | 2007-09-12 |
US7700939B2 (en) | 2010-04-20 |
US20080272387A1 (en) | 2008-11-06 |
US20080272362A1 (en) | 2008-11-06 |
US20100155694A1 (en) | 2010-06-24 |
US20060124917A1 (en) | 2006-06-15 |
US7902543B2 (en) | 2011-03-08 |
CN101076897A (zh) | 2007-11-21 |
US20070051967A1 (en) | 2007-03-08 |
JP2008523615A (ja) | 2008-07-03 |
US7402831B2 (en) | 2008-07-22 |
US7737430B2 (en) | 2010-06-15 |
US7700938B2 (en) | 2010-04-20 |
CN100490194C (zh) | 2009-05-20 |
JP5059617B2 (ja) | 2012-10-24 |
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