AU5463700A - Photon recycling semiconductor multi-wavelength light-emitting diodes - Google Patents

Photon recycling semiconductor multi-wavelength light-emitting diodes

Info

Publication number
AU5463700A
AU5463700A AU54637/00A AU5463700A AU5463700A AU 5463700 A AU5463700 A AU 5463700A AU 54637/00 A AU54637/00 A AU 54637/00A AU 5463700 A AU5463700 A AU 5463700A AU 5463700 A AU5463700 A AU 5463700A
Authority
AU
Australia
Prior art keywords
emitting diodes
wavelength light
semiconductor multi
photon recycling
recycling semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU54637/00A
Inventor
Xiaoyun Gxy Guo
E. Fred Schubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston University
Original Assignee
Boston University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston University filed Critical Boston University
Publication of AU5463700A publication Critical patent/AU5463700A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AU54637/00A 1999-06-04 2000-06-02 Photon recycling semiconductor multi-wavelength light-emitting diodes Abandoned AU5463700A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13764699P 1999-06-04 1999-06-04
US60137646 1999-06-04
PCT/US2000/015412 WO2000076005A1 (en) 1999-06-04 2000-06-02 Photon recycling semiconductor multi-wavelength light-emitting diodes

Publications (1)

Publication Number Publication Date
AU5463700A true AU5463700A (en) 2000-12-28

Family

ID=22478421

Family Applications (1)

Application Number Title Priority Date Filing Date
AU54637/00A Abandoned AU5463700A (en) 1999-06-04 2000-06-02 Photon recycling semiconductor multi-wavelength light-emitting diodes

Country Status (2)

Country Link
AU (1) AU5463700A (en)
WO (1) WO2000076005A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW497277B (en) 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
JP4997672B2 (en) * 2001-08-14 2012-08-08 ソニー株式会社 Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and semiconductor light emitting device
TW591811B (en) 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
EP1469516A1 (en) * 2003-04-14 2004-10-20 Epitech Corporation, Ltd. White-light emitting semiconductor device using a plurality of light emitting diode chips
JP4916459B2 (en) * 2003-06-05 2012-04-11 パナソニック株式会社 Manufacturing method of semiconductor light emitting device
JP4864940B2 (en) * 2004-02-19 2012-02-01 パナソニック株式会社 White light source
US7719015B2 (en) 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7745814B2 (en) 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
EP2427924A1 (en) * 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
CN102473817A (en) 2009-06-30 2012-05-23 3M创新有限公司 Cadmium-free re-emitting semiconductor construction
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
CN102097553A (en) * 2010-12-03 2011-06-15 北京工业大学 Sapphire substrate-based single chip white light emitting diode
JP5051319B2 (en) * 2011-12-14 2012-10-17 ソニー株式会社 Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and semiconductor light emitting device
CN104393131B (en) * 2014-11-07 2017-06-30 深圳市九洲光电科技有限公司 Prepare the method and optical pumping white light LEDs of optical pumping white light LEDs
JP2022163951A (en) * 2021-04-15 2022-10-27 聯嘉光電股▲ふん▼有限公司 Flip chip type light emitting diode structure and manufacturing method capable of emitting light in three primary color spectrum
EP4086975A1 (en) 2021-05-07 2022-11-09 Excellence Opto. Inc. Flip-chip light-emitting diode structure capable of emitting trichromatic spectrum and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726126A1 (en) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp LED device mfr. by thermally bonding LEDs
US5966393A (en) * 1996-12-13 1999-10-12 The Regents Of The University Of California Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light

Also Published As

Publication number Publication date
WO2000076005A1 (en) 2000-12-14

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase