EP2308104A4 - Semiconductor light converting construction - Google Patents

Semiconductor light converting construction

Info

Publication number
EP2308104A4
EP2308104A4 EP20090770725 EP09770725A EP2308104A4 EP 2308104 A4 EP2308104 A4 EP 2308104A4 EP 20090770725 EP20090770725 EP 20090770725 EP 09770725 A EP09770725 A EP 09770725A EP 2308104 A4 EP2308104 A4 EP 2308104A4
Authority
EP
Grant status
Application
Patent type
Prior art keywords
semiconductor light
light converting
converting construction
construction
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20090770725
Other languages
German (de)
French (fr)
Other versions
EP2308104A2 (en )
Inventor
Jun-Ying Zhang
Terry L Smith
Michael A Haase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091Scattering means in or on the semiconductor body or semiconductor body package
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
EP20090770725 2008-06-26 2009-06-10 Semiconductor light converting construction Withdrawn EP2308104A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US7590408 true 2008-06-26 2008-06-26
PCT/US2009/046835 WO2009158191A3 (en) 2008-06-26 2009-06-10 Semiconductor light converting construction

Publications (2)

Publication Number Publication Date
EP2308104A2 true EP2308104A2 (en) 2011-04-13
EP2308104A4 true true EP2308104A4 (en) 2014-04-30

Family

ID=41445203

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20090770725 Withdrawn EP2308104A4 (en) 2008-06-26 2009-06-10 Semiconductor light converting construction

Country Status (5)

Country Link
EP (1) EP2308104A4 (en)
JP (1) JP2011526079A (en)
KR (1) KR20110031953A (en)
CN (1) CN102124583B (en)
WO (1) WO2009158191A3 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2308103A4 (en) 2008-06-26 2014-04-30 3M Innovative Properties Co Light converting construction
WO2009158138A8 (en) 2008-06-26 2010-07-29 3M Innovative Properties Company Semiconductor light converting construction
JP2011526075A (en) 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー The method for manufacturing a light extractor
WO2010074987A3 (en) 2008-12-24 2010-08-19 3M Innovative Properties Company Light generating device having double-sided wavelength converter
WO2010075177A3 (en) 2008-12-24 2010-08-19 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
WO2010129412A1 (en) 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
JP2012526394A (en) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Re-emitting semiconductor carrier device and a manufacturing method for use with Led
KR20120094463A (en) 2009-06-30 2012-08-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Cadmium-free re-emitting semiconductor construction
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
JP2012532453A (en) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー White light electroluminescent device with an adjustable color temperature
WO2013157310A1 (en) * 2012-04-17 2013-10-24 シャープ株式会社 Light-emitting device and method for manufacturing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1653519A1 (en) * 2004-10-29 2006-05-03 Mitsubishi Heavy Industries, Ltd. Photoelectric conversion device
US20060124917A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Comapany Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission
US20060186802A1 (en) * 2005-02-24 2006-08-24 Eastman Kodak Company Oled device having improved light output
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580740B2 (en) * 2001-07-18 2003-06-17 The Furukawa Electric Co., Ltd. Semiconductor laser device having selective absorption qualities
US7016384B2 (en) * 2002-03-14 2006-03-21 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
CN100337337C (en) 2003-07-18 2007-09-12 财团法人工业技术研究院 Omnidirectional reflector and luminous apparatus produced thereby
JP4093943B2 (en) * 2003-09-30 2008-06-04 三洋電機株式会社 Light emitting device and the fabrication method thereof
JP2007005173A (en) 2005-06-24 2007-01-11 Toshiba Matsushita Display Technology Co Ltd Display device
KR20070011041A (en) * 2005-07-19 2007-01-24 주식회사 엘지화학 Light emitting diode device having advanced light extraction efficiency and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1653519A1 (en) * 2004-10-29 2006-05-03 Mitsubishi Heavy Industries, Ltd. Photoelectric conversion device
US20060124917A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Comapany Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission
US20060186802A1 (en) * 2005-02-24 2006-08-24 Eastman Kodak Company Oled device having improved light output
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GUO S P ET AL: "Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 77, no. 25, 18 December 2000 (2000-12-18), pages 4107 - 4109, XP012026930, ISSN: 0003-6951, DOI: 10.1063/1.1334650 *

Also Published As

Publication number Publication date Type
JP2011526079A (en) 2011-09-29 application
CN102124583B (en) 2013-06-19 grant
WO2009158191A2 (en) 2009-12-30 application
EP2308104A2 (en) 2011-04-13 application
CN102124583A (en) 2011-07-13 application
KR20110031953A (en) 2011-03-29 application
WO2009158191A3 (en) 2010-03-25 application

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Legal Events

Date Code Title Description
AX Request for extension of the european patent to

Countries concerned: ALBARS

17P Request for examination filed

Effective date: 20110125

AK Designated contracting states:

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

DAX Request for extension of the european patent (to any country) deleted
A4 Despatch of supplementary search report

Effective date: 20140402

RIC1 Classification (correction)

Ipc: H01L 33/44 20100101AFI20140327BHEP

Ipc: H01L 33/08 20100101ALN20140327BHEP

Ipc: H01L 33/50 20100101ALI20140327BHEP

18W Withdrawn

Effective date: 20140522