EP2308104A4 - Halbleiter-lichtumwandlungskonstruktion - Google Patents

Halbleiter-lichtumwandlungskonstruktion

Info

Publication number
EP2308104A4
EP2308104A4 EP09770725.1A EP09770725A EP2308104A4 EP 2308104 A4 EP2308104 A4 EP 2308104A4 EP 09770725 A EP09770725 A EP 09770725A EP 2308104 A4 EP2308104 A4 EP 2308104A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor light
light converting
converting construction
construction
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09770725.1A
Other languages
English (en)
French (fr)
Other versions
EP2308104A2 (de
Inventor
Jun-Ying Zhang
Terry L Smith
Michael A Haase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of EP2308104A2 publication Critical patent/EP2308104A2/de
Publication of EP2308104A4 publication Critical patent/EP2308104A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
EP09770725.1A 2008-06-26 2009-06-10 Halbleiter-lichtumwandlungskonstruktion Withdrawn EP2308104A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7590408P 2008-06-26 2008-06-26
PCT/US2009/046835 WO2009158191A2 (en) 2008-06-26 2009-06-10 Semiconductor light converting construction

Publications (2)

Publication Number Publication Date
EP2308104A2 EP2308104A2 (de) 2011-04-13
EP2308104A4 true EP2308104A4 (de) 2014-04-30

Family

ID=41445203

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09770725.1A Withdrawn EP2308104A4 (de) 2008-06-26 2009-06-10 Halbleiter-lichtumwandlungskonstruktion

Country Status (5)

Country Link
EP (1) EP2308104A4 (de)
JP (1) JP2011526079A (de)
KR (1) KR20110031953A (de)
CN (1) CN102124583B (de)
WO (1) WO2009158191A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2308101A4 (de) 2008-06-26 2014-04-30 3M Innovative Properties Co Halbleiter-lichtumwandlungskonstruktion
US8461608B2 (en) 2008-06-26 2013-06-11 3M Innovative Properties Company Light converting construction
CN102124577A (zh) 2008-06-26 2011-07-13 3M创新有限公司 制造光提取器的方法
US8350462B2 (en) 2008-12-24 2013-01-08 3M Innovative Properties Company Light generating device having double-sided wavelength converter
CN102318088A (zh) 2008-12-24 2012-01-11 3M创新有限公司 制备双面波长转换器和使用所述双面波长转换器的光产生装置的方法
US9293622B2 (en) 2009-05-05 2016-03-22 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture
US8461568B2 (en) 2009-05-05 2013-06-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
CN102473817A (zh) 2009-06-30 2012-05-23 3M创新有限公司 无镉再发光半导体构造
JP5728007B2 (ja) 2009-06-30 2015-06-03 スリーエム イノベイティブ プロパティズ カンパニー 電流集中に基づく色調整を伴うエレクトロルミネセント素子
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
WO2013157310A1 (ja) * 2012-04-17 2013-10-24 シャープ株式会社 発光装置及びその製造方法
CN110456528A (zh) * 2019-08-06 2019-11-15 桂林电子科技大学 一种双波导耦合式的等离子电光调制器
US11362243B2 (en) 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1653519A1 (de) * 2004-10-29 2006-05-03 Mitsubishi Heavy Industries, Ltd. Photoelektrische Konversionsvorrichtung
US20060124917A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Comapany Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission
US20060186802A1 (en) * 2005-02-24 2006-08-24 Eastman Kodak Company Oled device having improved light output
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580740B2 (en) * 2001-07-18 2003-06-17 The Furukawa Electric Co., Ltd. Semiconductor laser device having selective absorption qualities
US7016384B2 (en) * 2002-03-14 2006-03-21 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
CN100337337C (zh) * 2003-07-18 2007-09-12 财团法人工业技术研究院 全方向反射镜及由其制造的发光装置
JP4093943B2 (ja) * 2003-09-30 2008-06-04 三洋電機株式会社 発光素子およびその製造方法
TWI276232B (en) * 2004-08-20 2007-03-11 Arima Optoelectronics Corp Light emitting diode with diffraction lattice
JP2007005173A (ja) * 2005-06-24 2007-01-11 Toshiba Matsushita Display Technology Co Ltd 表示装置
KR20070011041A (ko) * 2005-07-19 2007-01-24 주식회사 엘지화학 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1653519A1 (de) * 2004-10-29 2006-05-03 Mitsubishi Heavy Industries, Ltd. Photoelektrische Konversionsvorrichtung
US20060124917A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Comapany Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission
US20060186802A1 (en) * 2005-02-24 2006-08-24 Eastman Kodak Company Oled device having improved light output
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GUO S P ET AL: "Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 77, no. 25, 18 December 2000 (2000-12-18), pages 4107 - 4109, XP012026930, ISSN: 0003-6951, DOI: 10.1063/1.1334650 *

Also Published As

Publication number Publication date
WO2009158191A2 (en) 2009-12-30
CN102124583A (zh) 2011-07-13
KR20110031953A (ko) 2011-03-29
WO2009158191A3 (en) 2010-03-25
CN102124583B (zh) 2013-06-19
EP2308104A2 (de) 2011-04-13
JP2011526079A (ja) 2011-09-29

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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A4 Supplementary search report drawn up and despatched

Effective date: 20140402

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Ipc: H01L 33/08 20100101ALN20140327BHEP

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