WO2009158191A3 - Semiconductor light converting construction - Google Patents

Semiconductor light converting construction Download PDF

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Publication number
WO2009158191A3
WO2009158191A3 PCT/US2009/046835 US2009046835W WO2009158191A3 WO 2009158191 A3 WO2009158191 A3 WO 2009158191A3 US 2009046835 W US2009046835 W US 2009046835W WO 2009158191 A3 WO2009158191 A3 WO 2009158191A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor light
refraction
index
outer layer
light converting
Prior art date
Application number
PCT/US2009/046835
Other languages
French (fr)
Other versions
WO2009158191A2 (en
Inventor
Jun-Ying Zhang
Terry L. Smith
Michael A. Haase
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to EP09770725.1A priority Critical patent/EP2308104A4/en
Priority to JP2011516415A priority patent/JP2011526079A/en
Priority to CN2009801321609A priority patent/CN102124583B/en
Priority to US13/000,592 priority patent/US20110101402A1/en
Publication of WO2009158191A2 publication Critical patent/WO2009158191A2/en
Publication of WO2009158191A3 publication Critical patent/WO2009158191A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Abstract

Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
PCT/US2009/046835 2008-06-26 2009-06-10 Semiconductor light converting construction WO2009158191A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09770725.1A EP2308104A4 (en) 2008-06-26 2009-06-10 Semiconductor light converting construction
JP2011516415A JP2011526079A (en) 2008-06-26 2009-06-10 Semiconductor optical conversion structure
CN2009801321609A CN102124583B (en) 2008-06-26 2009-06-10 Semiconductor light converting construction
US13/000,592 US20110101402A1 (en) 2008-06-26 2009-06-10 Semiconductor light converting construction

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7590408P 2008-06-26 2008-06-26
US61/075,904 2008-06-26

Publications (2)

Publication Number Publication Date
WO2009158191A2 WO2009158191A2 (en) 2009-12-30
WO2009158191A3 true WO2009158191A3 (en) 2010-03-25

Family

ID=41445203

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/046835 WO2009158191A2 (en) 2008-06-26 2009-06-10 Semiconductor light converting construction

Country Status (5)

Country Link
EP (1) EP2308104A4 (en)
JP (1) JP2011526079A (en)
KR (1) KR20110031953A (en)
CN (1) CN102124583B (en)
WO (1) WO2009158191A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110031957A (en) 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Light converting construction
WO2009158138A2 (en) 2008-06-26 2009-12-30 3M Innovative Properties Company Semiconductor light converting construction
EP2308102A4 (en) 2008-06-26 2014-05-07 3M Innovative Properties Co Method of fabricating light extractor
US8865493B2 (en) 2008-12-24 2014-10-21 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
CN102318089A (en) 2008-12-24 2012-01-11 3M创新有限公司 Light generating device with two-sided wavelength shifter
EP2427921A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
JP2012526392A (en) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Re-emitting semiconductor structure with improved extraction efficiency
KR20120015337A (en) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
CN102473816B (en) 2009-06-30 2015-03-11 3M创新有限公司 Electroluminescent devices with color adjustment based on current crowding
KR20120094463A (en) 2009-06-30 2012-08-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Cadmium-free re-emitting semiconductor construction
KR20120092549A (en) 2009-06-30 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 White light electroluminescent devices with adjustable color temperature
WO2013157310A1 (en) * 2012-04-17 2013-10-24 シャープ株式会社 Light-emitting device and method for manufacturing same
CN110456528A (en) * 2019-08-06 2019-11-15 桂林电子科技大学 A kind of plasma electric optical modulator of twin-guide manifold type
US11362243B2 (en) 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030016720A1 (en) * 2001-07-18 2003-01-23 The Furukawa Electric Co., Ltd. Semiconductor laser device having selective absortion qualities
US20030174745A1 (en) * 2002-03-14 2003-09-18 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
US20050141240A1 (en) * 2003-09-30 2005-06-30 Masayuki Hata Light emitting device and fabrication method thereof
KR20070011041A (en) * 2005-07-19 2007-01-24 주식회사 엘지화학 Light emitting diode device having advanced light extraction efficiency and preparation method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100337337C (en) * 2003-07-18 2007-09-12 财团法人工业技术研究院 Omnidirectional reflector and luminous apparatus produced thereby
TWI276232B (en) * 2004-08-20 2007-03-11 Arima Optoelectronics Corp Light emitting diode with diffraction lattice
JP4959127B2 (en) * 2004-10-29 2012-06-20 三菱重工業株式会社 Photoelectric conversion device and substrate for photoelectric conversion device
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7602118B2 (en) * 2005-02-24 2009-10-13 Eastman Kodak Company OLED device having improved light output
JP2007005173A (en) * 2005-06-24 2007-01-11 Toshiba Matsushita Display Technology Co Ltd Display device
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030016720A1 (en) * 2001-07-18 2003-01-23 The Furukawa Electric Co., Ltd. Semiconductor laser device having selective absortion qualities
US20030174745A1 (en) * 2002-03-14 2003-09-18 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
US20050141240A1 (en) * 2003-09-30 2005-06-30 Masayuki Hata Light emitting device and fabrication method thereof
KR20070011041A (en) * 2005-07-19 2007-01-24 주식회사 엘지화학 Light emitting diode device having advanced light extraction efficiency and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2308104A4 *

Also Published As

Publication number Publication date
EP2308104A4 (en) 2014-04-30
CN102124583A (en) 2011-07-13
CN102124583B (en) 2013-06-19
WO2009158191A2 (en) 2009-12-30
KR20110031953A (en) 2011-03-29
JP2011526079A (en) 2011-09-29
EP2308104A2 (en) 2011-04-13

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