TW200802965A - Light-emitting diode incorporating an array of light extracting spots - Google Patents

Light-emitting diode incorporating an array of light extracting spots

Info

Publication number
TW200802965A
TW200802965A TW095144056A TW95144056A TW200802965A TW 200802965 A TW200802965 A TW 200802965A TW 095144056 A TW095144056 A TW 095144056A TW 95144056 A TW95144056 A TW 95144056A TW 200802965 A TW200802965 A TW 200802965A
Authority
TW
Taiwan
Prior art keywords
light
array
emitting diode
light extracting
extracting spots
Prior art date
Application number
TW095144056A
Other languages
Chinese (zh)
Inventor
Jen-Inn Chyi
Chia-Ming Lee
Jui-Cheng Chang
Tsung-Liang Chen
Shih-Ling Chen
Original Assignee
Tekcore Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tekcore Co Ltd filed Critical Tekcore Co Ltd
Publication of TW200802965A publication Critical patent/TW200802965A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

A light-emitting diode includes an optical layer formed in an array of substantially equidistant light extracting spots integrated to its multi-layer structure. The array of light extracting spots includes a distribution of juxtaposed hexagon patterns. The layer thickness of the light extracting spots is less than 800Å and preferably around 500Å.
TW095144056A 2006-06-26 2006-11-28 Light-emitting diode incorporating an array of light extracting spots TW200802965A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/474,878 US20070295951A1 (en) 2006-06-26 2006-06-26 Light-emitting diode incorporating an array of light extracting spots

Publications (1)

Publication Number Publication Date
TW200802965A true TW200802965A (en) 2008-01-01

Family

ID=38872729

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144056A TW200802965A (en) 2006-06-26 2006-11-28 Light-emitting diode incorporating an array of light extracting spots

Country Status (4)

Country Link
US (2) US20070295951A1 (en)
JP (1) JP2008010809A (en)
CN (1) CN101097975A (en)
TW (1) TW200802965A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455304B (en) * 2012-01-30 2014-10-01 Lextar Electronics Corp Patterned substrate and stacked led structure
US9484496B2 (en) 2010-02-04 2016-11-01 Lg Innotek Co., Ltd. Light emitting device, method of manufacturing the same, light emitting device package and lighting system
TWI696783B (en) * 2015-08-04 2020-06-21 義大利商沙斯格特斯公司 Hydrogen dosage in led lighting bulbs

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101965B2 (en) * 2008-12-02 2012-01-24 Epivalley Co., Ltd. III-nitride semiconductor light emitting device having a multilayered pad
EP2461379B1 (en) 2009-07-31 2017-03-01 Denka Company Limited Wafer for led mounting, method for manufacturing the same, and led-mounted structure using the wafer
CN102201512B (en) * 2011-04-22 2013-04-10 东莞市中镓半导体科技有限公司 Patterned structure substrate
US10032956B2 (en) * 2011-09-06 2018-07-24 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
US9324560B2 (en) * 2011-09-06 2016-04-26 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
KR101315939B1 (en) * 2012-04-30 2013-10-08 부경대학교 산학협력단 Led package and manufacturing method thereof
KR102504323B1 (en) * 2016-01-05 2023-02-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 A light emitting device
JP7094558B2 (en) * 2016-01-05 2022-07-04 スージョウ レキン セミコンダクター カンパニー リミテッド Semiconductor element
CN107833944B (en) * 2017-11-13 2019-06-14 湘能华磊光电股份有限公司 A kind of LED epitaxial layer structure and its growing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
CA2393081C (en) * 1999-12-03 2011-10-11 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP2001177145A (en) * 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp Semiconductor light emitting device and method of manufacturing the same
JP4055503B2 (en) * 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light emitting device
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
WO2005069388A1 (en) * 2004-01-20 2005-07-28 Nichia Corporation Semiconductor light-emitting device
KR100581831B1 (en) * 2004-02-05 2006-05-23 엘지전자 주식회사 Light emitting diode
US20060043398A1 (en) * 2004-08-30 2006-03-02 Pei-Jih Wang Light emitting diode with diffraction lattice
JP2006140357A (en) * 2004-11-12 2006-06-01 Mitsubishi Cable Ind Ltd Nitride semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484496B2 (en) 2010-02-04 2016-11-01 Lg Innotek Co., Ltd. Light emitting device, method of manufacturing the same, light emitting device package and lighting system
TWI455304B (en) * 2012-01-30 2014-10-01 Lextar Electronics Corp Patterned substrate and stacked led structure
TWI696783B (en) * 2015-08-04 2020-06-21 義大利商沙斯格特斯公司 Hydrogen dosage in led lighting bulbs

Also Published As

Publication number Publication date
JP2008010809A (en) 2008-01-17
CN101097975A (en) 2008-01-02
US20080296601A1 (en) 2008-12-04
US20070295951A1 (en) 2007-12-27

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