CN107833944B - A kind of LED epitaxial layer structure and its growing method - Google Patents
A kind of LED epitaxial layer structure and its growing method Download PDFInfo
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- CN107833944B CN107833944B CN201711117656.1A CN201711117656A CN107833944B CN 107833944 B CN107833944 B CN 107833944B CN 201711117656 A CN201711117656 A CN 201711117656A CN 107833944 B CN107833944 B CN 107833944B
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 109
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 109
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 238000001259 photo etching Methods 0.000 claims description 17
- 229910015844 BCl3 Inorganic materials 0.000 claims description 15
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 230000026267 regulation of growth Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 15
- 238000000605 extraction Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229930193894 ellipsoidone Natural products 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
This application provides a kind of LED epitaxial layer structure and its growing method, LED epitaxial layer structures, comprising: successively grows on substrate the first U-GaN layers, aluminium nitride film stick, the 2nd U-GaN layers, N-GaN layers, quantum well layer and p type semiconductor layer；Substrate is patterned substrate, and the figure of substrate is the cone being arranged in array；Aluminium nitride film stick is located at the top of circular cone point, wherein the first U-GaN layers and the 2nd U-GaN layers make up to form U-GaN layers, aluminium nitride film stick is covered by U-GaN layers.The present invention can stop defect caused by the top of cone to grow further up, reduce the defect and dislocation density of LED epitaxial layer due to increasing aluminium nitride film stick；And the propagation path and propagation angle of GaN internal light can be improved, and then improve the light extraction efficiency of chip.
Description
Technical field
The invention belongs to LED technology fields, and in particular to a kind of LED epitaxial layer structure and its growing method.
Background technique
With the continuous innovation and the popularization and application of semiconductor product of semicon industry technology, nowadays LED chip has been
It plays an important role through every field in people's daily life.Especially in normal lighting, display, mobile phone, instruction
Lamp etc., LED chip are widely applied.So far, high brightness is prepared, the LED chip of high reliability becomes industry
Mainstream development direction, while also becoming the technological challenge that must face of engineers and technicians.
GaN material is one of most widely used material in third generation semiconductor material, is to prepare Light-Emitting Diode
The important materials of (Light Emitting Diode, LED).GaN is to belong to one of hexagonal wurtzite structure material, is had
The advantages that high temperature resistant, big forbidden bandwidth.GaN material is to prepare the important materials of LED epitaxial wafer.LED epitaxial wafer can pass through
MOCVD device grows preparation on the substrates such as Sapphire Substrate, SI substrate, but due to lattice mismatch etc. in growth course
Perfect GaN crystal is hardly resulted in, the LED epitaxial wafer for growing preparation has the shortcomings that dislocation density is big, defect is more.Reduce defect
Preparing more perfect epitaxial wafer is the target constantly pursued in industrial production.
Therefore, in view of the above-mentioned problems, providing a kind of LED epitaxial layer structure and its growing method, be the art urgently
The technical issues of solution.
Summary of the invention
In view of this, LED chip can be improved the present invention provides a kind of LED epitaxial layer structure and its growing method
Light path out reduces the defect of LED epitaxial layer, improves the light extraction efficiency of chip.
In order to solve the above technical problems, the present invention provides a kind of LED epitaxial layer structures, comprising: be successively grown in described
The first U-GaN layers on substrate, aluminium nitride film stick, the 2nd U-GaN layers, N-GaN layers, quantum well layer and p type semiconductor layer；
The substrate is patterned substrate, and the figure of the substrate is the cone being arranged in array；
The aluminium nitride film stick is located at the top of the circular cone point,
Wherein, the described first U-GaN layers and the described 2nd U-GaN layers make up to form U-GaN layers, the aluminium nitride film stick
It is covered by U-GaN layers described；The aluminium nitride film stick is sharp by the aluminium nitride film being grown on the first U-GaN layer
It is etched with sense coupling equipment.
Further, the aluminium nitride film using sputtering method prepare, the aluminium nitride film with a thickness of 50nm-
450nm。
Further, the aluminium nitride film stick utilizes sense by the aluminium nitride film being grown on the first U-GaN layer
Coupled plasma etch equipment is answered to etch, further are as follows:
Even upper photoresist, the aluminium nitride is produced using step photo-etching machine on a photoresist on the aluminium nitride film
The photoetching offset plate figure of thin-film rod；
It is 900-1400W in upper radio-frequency power, lower radio-frequency power is 400-800W, vacuum degree 2-9mTorr, with BCl3
Under conditions of etching gas, the aluminium nitride film stick is obtained using sense coupling technique, and carry out
It removes photoresist cleaning；
Wherein, the BCl3Gas flow between 200-50Sccm
Further, the shape of the aluminium nitride film stick includes at least in cuboid, square, polyhedron and ellipsoid
One kind；The aluminium nitride film stick is 200-400nm, the length of the aluminium nitride film stick at a distance from the cone apex
Wide or diameter is 20-150nm.
Further, described U-GaN layers with a thickness of 1.95um-2.8um.
In order to solve the above technical problems, the present invention provides a kind of LED chip outer layer growth methods, comprising:
Substrate is patterned and handles and the substrate is cleaned, the figure of the substrate of acquisition is in array
The cone of arrangement；
One U-GaN layers of growth regulation in metal-organic chemical vapor deposition equipment；
Growing aluminum nitride film performs etching the aluminium nitride film using sense coupling equipment,
The aluminium nitride film stick being arranged in array is obtained, the aluminium nitride film stick is located at the top of the circular cone point；
In metal-organic chemical vapor deposition equipment, successively two U-GaN layers of growth regulation, N-GaN layers, Quantum Well
Layer and p type semiconductor layer；
Wherein, the described first U-GaN layers and the described 2nd U-GaN layers make up to form U-GaN layers, the aluminium nitride film stick
It is covered by U-GaN layers described.
Further, the aluminium nitride film using sputtering method prepare, the aluminium nitride film with a thickness of 50nm-
450nm。
Further, the even upper photoresist on the aluminium nitride film, is produced on a photoresist using step photo-etching machine
The photoetching offset plate figure of the aluminium nitride film stick；
It is 900-1400W in upper radio-frequency power, lower radio-frequency power is 400-800W, vacuum degree 2-9mTorr, with BCl3
Under conditions of etching gas, the aluminium nitride film stick is obtained using sense coupling technique, and carry out
It removes photoresist cleaning；
Wherein, the BCl3Gas flow between 200-50Sccm.
Further, the shape of the aluminium nitride film stick includes at least in cuboid, square, polyhedron and ellipsoid
One kind；The aluminium nitride film stick is 200-400nm, the length of the aluminium nitride film stick at a distance from the cone apex
Wide or diameter is 20-150nm.
Further, described U-GaN layers with a thickness of 1.95um-2.8um.
Compared with prior art, LED epitaxial layer structure described herein and its growing method achieving the following effects:
(1) LED epitaxial layer structure provided by the invention and its growing method are stopped due to the presence of aluminium nitride film stick
Defect caused by the top of the cone of patterned substrate is grown further up, can effectively improve the crystalline of GaN crystal
Amount, and then reduce the defect of LED epitaxial layer and reduce the dislocation density of LED epitaxial layer.
(2) LED epitaxial layer structure of the invention and its growing method can make portion due to the presence of aluminium nitride film stick
Light splitter need not pass through the reflection of substrate, but be reflected by aluminium nitride film stick, therefore, change the propagation of GaN internal light
Path and propagation angle, and then improve the light extraction efficiency of chip.
(3) LED outer layer growth method of the invention, process route is succinct, is suitable for industrial volume production.
Certainly, implementing any of the products of the present invention specific needs while must not reach all the above technical effect.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present invention, constitutes a part of the invention, this hair
Bright illustrative embodiments and their description are used to explain the present invention, and are not constituted improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the schematic diagram of the LED epitaxial layer structure in the embodiment of the present invention 1；
Fig. 2 is the process flow chart of the LED chip outer layer growth method in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the substrate in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram after one U-GaN layers of growth regulation in the embodiment of the present invention；
Fig. 5 is that the structural schematic diagram after aluminium nitride film is sputtered in the embodiment of the present invention；
Fig. 6 is the structural schematic diagram in the embodiment of the present invention after aluminium nitride film etching；
Fig. 7 is that the 2nd U-GaN layers of structural schematic diagram has been grown in the embodiment of the present invention；
Fig. 8 is the structural schematic diagram that N-GaN layers have been grown in the embodiment of the present invention；
Fig. 9 is the structural schematic diagram that quantum well layer has been grown in the embodiment of the present invention；
Figure 10 is the structural schematic diagram that p type semiconductor layer has been grown in the embodiment of the present invention；
Figure 11 is the process flow chart of the LED chip growing method in the embodiment of the present invention.
Specific embodiment
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the present invention
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, then in subsequent attached drawing does not need that it is further discussed.
Embodiment 1
In order to solve the above technical problems, this hair embodiment provides a kind of LED epitaxial layer structure, Fig. 1 is that the present invention is implemented
The schematic diagram of LED epitaxial layer structure in example 1, referring to Figure 1, the LED epitaxial layer structure, comprising: be successively grown on substrate 1
The first U-GaN layer 201, aluminium nitride film stick 301, the 2nd U-GaN layer 202, N-GaN layer 4, quantum well layer 5 and P-type semiconductor
Layer 6.Substrate 1 is patterned substrate, and the figure of substrate 1 includes multiple cones 101；Aluminium nitride film stick 301 is located at cone
The top on 101 vertex.
Wherein, the first U-GaN layer 201 and the 2nd U-GaN layer 202 make up to form U-GaN layer 2,301 quilt of aluminium nitride film stick
It is coated in U-GaN layer 2；Aluminium nitride film stick 301 utilizes induction by the aluminium nitride film 3 being grown on the first U-GaN layer 201
Coupled plasma etch equipment etches.
Optionally, the aluminium nitride film using sputtering method prepare, the aluminium nitride film with a thickness of 50nm-
450nm。
Optionally, the aluminium nitride film stick utilizes induction by the aluminium nitride film being grown on the first U-GaN layer
Coupled plasma etch equipment etches, further are as follows:
Even upper photoresist, the aluminium nitride is produced using step photo-etching machine on a photoresist on the aluminium nitride film
The photoetching offset plate figure of thin-film rod；It is 900-1400W in upper radio-frequency power, lower radio-frequency power is 400-800W, vacuum degree 2-
9mTorr, with BCl3Under conditions of etching gas, the aluminium nitride is obtained using sense coupling technique
Thin-film rod, and carry out cleaning of removing photoresist；Wherein, the BCl3Gas flow between 200-50Sccm.
Optionally, the shape of the aluminium nitride film stick includes at least in cuboid, square, polyhedron and ellipsoid
It is a kind of；The aluminium nitride film stick is 200-400nm, the length and width of the aluminium nitride film stick at a distance from the cone apex
Or diameter is 20-150nm.
Optionally, described U-GaN layers with a thickness of 1.95um-2.8um.
Optionally, substrate 1 includes but is not limited to GaN substrate, ZnO substrate, Sapphire Substrate, Si substrate, SiC substrate.
LED epitaxial layer structure provided in this embodiment blocks patterned substrate due to the presence of aluminium nitride film stick
Defect caused by the top of cone is grown further up, can effectively improve the crystalline quality of GaN crystal, and then reduce LED
The defect of epitaxial layer and the dislocation density for reducing LED epitaxial layer；Can make some light need not pass through substrate reflection, but by
Therefore the reflection of aluminium nitride film stick changes the propagation path and propagation angle of GaN internal light, and then improve going out for chip
Light efficiency.
Embodiment 2
A kind of LED chip outer layer growth method is present embodiments provided, Fig. 2 is the LED chip in the embodiment of the present invention
The process flow chart of outer layer growth method, refers to Fig. 2, which includes:
Step S101: being patterned substrate and handle and clean to substrate, and the figure of the substrate of acquisition includes more
A cone.
Fig. 3 is that the structural schematic diagram of the substrate in the embodiment of the present invention specifically, is usually patterned referring to Figure 1
Cone 101 on treated substrate 1 is arranged in array, this can more guarantee that the light being incident on substrate 1 is more preferable
Reflect away, to improve the light extraction efficiency of LED chip.
Step S102: one U-GaN layers of growth regulation in metal-organic chemical vapor deposition equipment.
Fig. 4 is the structural schematic diagram after one U-GaN layers of growth regulation in the embodiment of the present invention.Refer to Fig. 4, the first U-
GaN layer is in 101 apex of cone with a thickness of 200-400nm.In some specific embodiments, the first U-GaN layers in circle
101 apex of cone with a thickness of 200nm, 250nm, 300nm and 400nm, above-mentioned thickness is merely exemplary explanation, thickness
It is selected according to specific design.
Step S103: growing aluminum nitride film carries out aluminium nitride film using sense coupling equipment
Etching, obtains the aluminium nitride film stick being arranged in array, aluminium nitride film stick is located at the top of cone apex.
Fig. 5 is that the structural schematic diagram after aluminium nitride film is sputtered in the embodiment of the present invention, and Fig. 6 is nitrogen in the embodiment of the present invention
Structural schematic diagram after changing aluminium film etching.Fig. 5 and Fig. 6 are referred to, aluminium nitride film 3 is prepared using sputtering method, is nitrogenized
Aluminium film 3 with a thickness of 50nm-450nm.The even upper photoresist on aluminium nitride film 3, on a photoresist using step photo-etching machine
Produce the photoetching offset plate figure of aluminium nitride film stick 301；It is 900-1400W in upper radio-frequency power, lower radio-frequency power is 400-
800W, vacuum degree 2-9mTorr, with BCl3Under conditions of etching gas, sense coupling technique is utilized
Aluminium nitride film stick 301 is obtained, and carries out cleaning of removing photoresist；Wherein, BCl3Gas flow between 200-50Sccm.Wherein
BCl3The specific flow of gas can according between equipment, the difference of processing step optimize adjustment.,
It should be noted that the shape of aluminium nitride film stick 301 includes in cuboid, square, polyhedron and ellipsoid
One kind, in some specific embodiments, the aluminium nitride film stick 301 made on the same substrate also may include rectangular
Two or more shape in body, square, polyhedron and ellipsoid, the invention is not limited in this regard.Aluminum nitride thin
Film stick 301 at a distance from 101 vertex of cone be 200-400nm, U-GaN layers with a thickness of 1.95um-2.8um.
Step S104: in metal-organic chemical vapor deposition equipment, successively two U-GaN layer 202 of growth regulation, N-
GaN layer 4, quantum well layer 5 and p type semiconductor layer 6.
Fig. 7 is that the 2nd U-GaN layers of structural schematic diagram has been grown in the embodiment of the present invention；Fig. 8 is in the embodiment of the present invention
N-GaN layers of structural schematic diagram is grown；Fig. 9 is the structural schematic diagram that quantum well layer has been grown in the embodiment of the present invention；Figure 10
For the structural schematic diagram for having grown p type semiconductor layer in the embodiment of the present invention.Refer to Fig. 7-Figure 10, wherein the first U-GaN layers
201 and the 2nd U-GaN layer 202 make up to form U-GaN layer 2, aluminium nitride film stick 301 is covered by U-GaN layer 2.
It should be noted that the first U-GaN layer 201 and the 2nd U-GaN layer 202, N-GaN layer 4, quantum well layer in the present invention
5 and the growth conditions of p type semiconductor layer 6 please refer to the prior art.
Optionally, substrate 1 includes but is not limited to GaN substrate, ZnO substrate, Sapphire Substrate, Si substrate, SiC substrate.
LED outer layer growth method provided in this embodiment blocks graphical lining due to the presence of aluminium nitride film stick
Defect caused by the top of the cone at bottom is grown further up, can effectively improve the crystalline quality of GaN crystal, and then reduce
The defect of LED epitaxial layer and the dislocation density for reducing LED epitaxial layer；It can make some light that need not pass through the reflection of substrate, and
It is to be reflected by aluminium nitride film stick, therefore, changes the propagation path and propagation angle of GaN internal light, and then improve chip
Light extraction efficiency；And this method process route is succinct, is suitable for industrial volume production.
Application Example
A kind of LED chip outer layer growth method is present embodiments provided, Figure 11 is the LED chip in the embodiment of the present invention
The process flow chart of growing method, referring to Figure 11, which includes:
Step S201: being patterned substrate and handle and clean to substrate, and the figure of the substrate of acquisition includes more
A cone.
Specifically, the cone on the substrate that is usually patterned that treated is arranged in array, this can more be protected
It demonstrate,proves the light being incident on substrate preferably to be reflected away, to improve the light extraction efficiency of LED chip.
Step S202: one U-GaN layers of growth regulation in metal-organic chemical vapor deposition equipment.
First U-GaN layers at cone apex with a thickness of 200-400nm.In some specific embodiments, first
U-GaN layers in 101 apex of cone with a thickness of 270nm or 300nm, above-mentioned thickness is merely exemplary explanation, thickness
It is selected according to specific design.
Step S203: growing aluminum nitride film carries out aluminium nitride film using sense coupling equipment
Etching, obtains the aluminium nitride film stick being arranged in array, aluminium nitride film stick is located at the top of cone apex.
Aluminium nitride film using sputtering method prepare, aluminium nitride film with a thickness of 50nm-450nm.In aluminum nitride thin
Even upper photoresist, the photoetching offset plate figure of aluminium nitride film stick is produced using step photo-etching machine on a photoresist on film；It is penetrated upper
Frequency power is 900-1400W, and lower radio-frequency power is 400-800W, vacuum degree 2-9mTorr, with BCl3As etching gas
Under the conditions of, aluminium nitride film stick is obtained using sense coupling technique, and carry out cleaning of removing photoresist；Wherein, BCl3
Gas flow between 200-50Sccm.It should be noted that the shape of aluminium nitride film stick include cuboid, square,
One of polyhedron and ellipsoid make aluminium nitride film stick on the same substrate in some specific embodiments
It may include two or more the shape in cuboid, square, polyhedron and ellipsoid, the present invention does not limit this
System.Aluminium nitride film stick at a distance from cone apex be 250nm, U-GaN layers with a thickness of 1.95um-2.8um.
Step S204: in metal-organic chemical vapor deposition equipment, successively two U-GaN layers of growth regulation, N-GaN
Layer, quantum well layer and p type semiconductor layer.
Wherein, the first U-GaN layer 201 and the 2nd U-GaN layer 202 make up to form U-GaN layer 2,301 quilt of aluminium nitride film stick
It is coated in U-GaN layer 2.
Step S205: insulating layer, current extending are successively grown, and etches chip shape, N-type electrode area and cutting
Road.
Specifically, the epitaxial wafer of p type semiconductor layer has been grown by after surface clean, using one thickness of PECVD lamination
Spend the SiO in 2500A2Layer is used as current barrier layer, by wet etching after yellow light photoetching, corrodes current barrier layer CBL figure out
Shape is then removed photoresist and is cleaned up；Using electron beam evaporation equipment in SiO2One layer of ITO is deposited as current extending in layer surface,
Current extending with a thickness ofThen extra ITO is etched away by yellow light photoetching and wet corrosion technique, again
Carry out cleaning of removing photoresist.Then cutting for chip pattern, N-type electrode area and chip is etched using yellow light technique and ICP equipment again
It cuts.Current barrier layer is conducive to electric current and extends from electrode to current extending.
Step S206: production N-type electrode and P-type electrode, and grow transparent insulating layer.
N electrode and P electrode are made respectively by yellow light photoetching process and metal evaporation mode, and thickness of electrode is in 1.1um.And
High temperature furnace pipe alloy is carried out to N electrode and P electrode afterwards, forms metal alloy electrodes, Tube alloys temperature is at 300 DEG C.Alloy electricity
Pole can enhance the electric conductivity of N electrode and P electrode.Layer of transparent insulating layer is grown using PECVD, thickness exists
Step S207: subsequent to survey and sort by grinding, essence throwing, back plating DBR (Bragg reflecting layer), cutting splitting, point
Etc. techniques be fabricated to finished chip.
LED outer layer growth method provided in this embodiment blocks graphical lining due to the presence of aluminium nitride film stick
Defect caused by the top of the cone at bottom is grown further up, can effectively improve the crystalline quality of GaN crystal, and then reduce
The defect of LED epitaxial layer and the dislocation density for reducing LED epitaxial layer；It can make some light that need not pass through the reflection of substrate, and
It is to be reflected by aluminium nitride film stick, therefore, changes the propagation path and propagation angle of GaN internal light, and then improve chip
Light extraction efficiency, compared with the existing technology in not set aluminium nitride film stick LED chip, luminance raising is in 1.5%-2.5%
Between.And this method process route is succinct, is suitable for industrial volume production.
Compared with prior art, LED epitaxial layer structure described herein and its growing method achieving the following effects:
(1) LED epitaxial layer structure provided by the invention and its growing method are stopped due to the presence of aluminium nitride film stick
Defect caused by the top of the cone of patterned substrate is grown further up, can effectively improve the crystalline of GaN crystal
Amount, and then reduce the defect of LED epitaxial layer and reduce the dislocation density of LED epitaxial layer.
(2) LED epitaxial layer structure of the invention and its growing method can make portion due to the presence of aluminium nitride film stick
Light splitter need not pass through the reflection of substrate, but be reflected by aluminium nitride film stick, therefore, change the propagation of GaN internal light
Path and propagation angle, and then improve the light extraction efficiency of chip.
(3) LED outer layer growth method of the invention, process route is succinct, is suitable for industrial volume production.
Since method part has been described in detail the embodiment of the present application, here to structure involved in embodiment
Expansion with method corresponding part describes to omit, and repeats no more.It can refer to method for the description of particular content in structure to implement
The content of example is no longer specific here to limit.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (10)
1. a kind of LED epitaxial layer structure characterized by comprising successively grow the first U-GaN layers, aluminium nitride on substrate
Thin-film rod, the 2nd U-GaN layers, N-GaN layers, quantum well layer and p type semiconductor layer；
The substrate is patterned substrate, and the figure of the substrate is the cone being arranged in array；
The aluminium nitride film stick is located at the top on the vertex of the cone,
Wherein, the described first U-GaN layers and the described 2nd U-GaN layers make up to form U-GaN layers, the aluminium nitride film stick is wrapped
It overlays in U-GaN layers described；The aluminium nitride film stick utilizes sense by the aluminium nitride film being grown on the first U-GaN layer
Coupled plasma etch equipment is answered to etch.
2. LED epitaxial layer structure according to claim 1, which is characterized in that
The aluminium nitride film be using sputtering method prepare, the aluminium nitride film with a thickness of 50nm-450nm.
3. LED epitaxial layer structure according to claim 1, which is characterized in that
The aluminium nitride film stick utilizes inductively coupled plasma by the aluminium nitride film being grown on the first U-GaN layer
Etching apparatus etches, further are as follows:
Even upper photoresist, the aluminium nitride film is produced using step photo-etching machine on a photoresist on the aluminium nitride film
The photoetching offset plate figure of stick；
It is 900-1400W in upper radio-frequency power, lower radio-frequency power is 400-800W, vacuum degree 2-9mTorr, with BCl3As quarter
Under conditions of losing gas, the aluminium nitride film stick is obtained using sense coupling technique, and it is clear remove photoresist
It washes；
Wherein, the BCl3Gas flow between 200-50Sccm.
4. LED epitaxial layer structure according to claim 1, which is characterized in that the shape of the aluminium nitride film stick is at least
Including one of polyhedron and ellipsoid；The aluminium nitride film stick is 200- at a distance from the vertex of the cone
400nm, the length and width or diameter of the aluminium nitride film stick are 20-150nm.
5. LED epitaxial layer structure according to claim 1, which is characterized in that described U-GaN layers with a thickness of 1.95um-
2.8um。
6. a kind of LED outer layer growth method characterized by comprising
Substrate is patterned and handles and the substrate is cleaned, the figure of the substrate of acquisition is to be arranged in array
Cone；
One U-GaN layers of growth regulation in metal-organic chemical vapor deposition equipment；
Growing aluminum nitride film performs etching the aluminium nitride film using sense coupling equipment, obtains
The aluminium nitride film stick being arranged in array, the aluminium nitride film stick are located at the top on the vertex of the cone；
In metal-organic chemical vapor deposition equipment, successively two U-GaN layers of growth regulation, N-GaN layers, quantum well layer and
P type semiconductor layer；
Wherein, the described first U-GaN layers and the described 2nd U-GaN layers make up to form U-GaN layers, the aluminium nitride film stick is wrapped
It overlays in U-GaN layers described.
7. LED outer layer growth method according to claim 6, which is characterized in that prepare the nitridation using sputtering method
Aluminium film, the aluminium nitride film with a thickness of 50nm-450nm.
8. LED outer layer growth method according to claim 6, which is characterized in that
Even upper photoresist, the aluminium nitride film is produced using step photo-etching machine on a photoresist on the aluminium nitride film
The photoetching offset plate figure of stick；
It is 900-1400W in upper radio-frequency power, lower radio-frequency power is 400-800W, vacuum degree 2-9mTorr, with BCl3As quarter
Under conditions of losing gas, the aluminium nitride film stick is obtained using sense coupling technique, and it is clear remove photoresist
It washes；
Wherein, the BCl3Gas flow between 200-50Sccm.
9. LED outer layer growth method according to claim 6, which is characterized in that the shape of the aluminium nitride film stick
Including at least one of polyhedron and ellipsoid；The aluminium nitride film stick is 200- at a distance from the vertex of the cone
400nm, the length and width or diameter of the aluminium nitride film stick are 20-150nm.
10. LED outer layer growth method according to claim 6, which is characterized in that described U-GaN layers with a thickness of
1.95um-2.8um。
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| CN101097975A (en) * | 2006-06-26 | 2008-01-02 | 泰谷光电科技股份有限公司 | Light-emitting diode incorporating an array of light extracting spots |
| CN102169936A (en) * | 2011-02-16 | 2011-08-31 | 亚威朗光电(中国)有限公司 | Graphical substrate and light-emitting diode (LED) chip |
| CN102916098A (en) * | 2011-08-01 | 2013-02-06 | 展晶科技(深圳)有限公司 | Light emitting diode crystalline grain and producing method thereof |
| CN104112803A (en) * | 2014-04-14 | 2014-10-22 | 中国科学院半导体研究所 | Semi-polar planar GaN-based light emitting diode and preparation method |
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| CN101097975A (en) * | 2006-06-26 | 2008-01-02 | 泰谷光电科技股份有限公司 | Light-emitting diode incorporating an array of light extracting spots |
| CN102169936A (en) * | 2011-02-16 | 2011-08-31 | 亚威朗光电(中国)有限公司 | Graphical substrate and light-emitting diode (LED) chip |
| CN102916098A (en) * | 2011-08-01 | 2013-02-06 | 展晶科技(深圳)有限公司 | Light emitting diode crystalline grain and producing method thereof |
| CN104112803A (en) * | 2014-04-14 | 2014-10-22 | 中国科学院半导体研究所 | Semi-polar planar GaN-based light emitting diode and preparation method |
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