CN108987541A - A kind of production method of tri compound graph substrate - Google Patents
A kind of production method of tri compound graph substrate Download PDFInfo
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- CN108987541A CN108987541A CN201810762724.8A CN201810762724A CN108987541A CN 108987541 A CN108987541 A CN 108987541A CN 201810762724 A CN201810762724 A CN 201810762724A CN 108987541 A CN108987541 A CN 108987541A
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- layer
- substrate
- graph
- photoresist
- sapphire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
The present invention relates to semi-conducting material manufacturing technical fields, provide a kind of production method of tri compound graph substrate, comprising: obtain a sapphire substrate cleaned up；The graph layer that one layer of regular arrangement is made on the sapphire substrate, forms binary graph substrate；In the binary graph substrate of formation sputter one layer of aluminium nitride composite layer, formed tri compound graph substrate, thus realize realize sapphire compound substrate production, can the material stress effectively to gallium nitride base be released effectively, reduce GaN growth defect；Sapphire structures figure layer is more significant to the improvement of the light extraction efficiency of light emitting diode simultaneously.
Description
Technical field
The invention belongs to semi-conducting material manufacturing technical field more particularly to a kind of production sides of tri compound graph substrate
Method.
Background technique
Gallium nitride (GaN) is a kind of novel semiconductor material, has many advantages, such as high efficiency, low-power consumption, long-life, wide
It is general to be applied to LED field.The gallium nitride of high-purity is expensive and is difficult to prepare, and generallys use sapphire as growth
The substrate material of GaN film.There are lattice mismatch (mismatch ratio is about 16%) and thermal stress mismatch between sapphire and GaN,
Direct growing gallium nitride will cause lattice defect on sapphire, and then reduce the luminescent properties of LED.Graphical sapphire substrate is
Finger prepares periodic micron or nanoscale patterned structures (exposure mask) on sapphire plane substrate.Patterned indigo plant
Jewel substrate not only can be reduced the dislocation density in gallium nitride (GaN) epitaxial process, improve internal quantum efficiency, and can also
The outgoing route for changing light, improves light extraction efficiency.
The most popular method of etching is dry etching (Dry Etch).Dry etching refers to will be etched using extra electric field
Gas (BCl3) is ionized into plasma, then carries out physics or chemical reaction to sapphire and photoresist (PR).Reflection is carved
The principal element of erosion has etch rate, etching selection ratio (Selectivity, abbreviation Sel).Etch rate referred in the unit time
Sapphire height is etched, etching selection ratio refers to the ratio of sapphire etch rate Yu photoresist etch rate.Etching choosing
The size for selecting ratio can determine PSS etching height and etch topography to a certain extent, and usual etching selection ratio is higher, and etching is high
It is better to spend higher and pattern.
But the Sapphire Substrate got using the preparation method of current Sapphire Substrate, the growth of gallium nitride
Existing defects, release effect is poor, and the figure layer of the Sapphire Substrate improves degree to the light extraction efficiency of light emitting diode
Poor, the brightness of light emitting diode is promoted unobvious.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of tri compound graph substrate, it is intended to solve the prior art and mention
The Sapphire Substrate of confession, the growth existing defects of gallium nitride, release effect is poor, and the figure layer of the Sapphire Substrate is to hair
The light extraction efficiency improvement degree of optical diode is poor, and the brightness of light emitting diode promotes unconspicuous problem.
The invention is realized in this way a kind of production method of tri compound graph substrate, the method includes following steps
It is rapid:
Obtain a sapphire substrate cleaned up；
The graph layer that one layer of regular arrangement is made on the sapphire substrate, forms binary graph substrate；
One layer of aluminium nitride composite layer is sputtered in the binary graph substrate of formation, forms tri compound graph substrate.
As an improvement scheme, it is described on the sapphire substrate make one layer of regular arrangement graph layer,
Formed binary graph substrate the step of specifically include the following steps:
The photoresist of one layer of high silicon is coated on the sapphire substrate of selection, and passes through high-temperature oxydation for the photoresist of high silicon
Switch to silicon dioxide layer；
A layer photoresist is coated in the silicon dioxide layer, and the mask plate patterns of preparatory rule design are transferred to coating
Photoresist layer on, form one layer of photo etched mask figure layer；
The silica layer region for removing no photoresist protection, carries out pattern etching shape to the silicon dioxide layer
At preliminary graphical sapphire substrate；
Extra photoresist is removed on the preliminary graphical sapphire substrate of formation；
Graphic sapphire after removal photoresist is cleaned, the binary graph substrate is obtained.
As an improvement scheme, 100nm-5 microns of the high silicon photoresist thickness, the temperature of high-temperature oxydation is in 600-
1200 degrees Celsius.
As an improvement scheme, it is described on the sapphire substrate make one layer of regular arrangement graph layer,
Formed binary graph substrate the step of specifically include the following steps:
A layer photoresist, which is coated, in the sapphire substrate of selection generates one layer of photo etched mask figure using photoetching technique
Layer；
The substance of one layer of low-refraction is filled in the photo etched mask figure layer and the sapphire substrate for having figure；
The photoresist coated on the sapphire substrate is removed, so that the substance of the low-refraction is formed new figure and covers
Film；
The new graphic mask that cleaning is formed, generates the binary graph substrate.
As an improvement scheme, the substance of the low-refraction includes SiO2, SiNx and TiO.
As an improvement scheme, the aluminium nitride composite layer with a thickness of 10-500nm.
Obtain a sapphire substrate cleaned up；The figure of one layer of regular arrangement is made on the sapphire substrate
Layer forms binary graph substrate；One layer of aluminium nitride composite layer is sputtered in the binary graph substrate of formation, and it is multiple to form ternary
Close graph substrate, thus realize realize sapphire compound substrate production, can the material stress effectively to gallium nitride base effectively release
It puts, reduces GaN growth defect；Sapphire structures figure layer is more aobvious to the improvement of the light extraction efficiency of light emitting diode simultaneously
It writes.
Detailed description of the invention
Fig. 1 is the implementation flow chart of the production method for the tri compound graph substrate that the embodiment of the present invention one provides；
Fig. 2 is the implementation flow chart of the production method of tri compound graph substrate provided by Embodiment 2 of the present invention；
Fig. 3 is the manufacturing process schematic diagram of tri compound graph substrate provided by Embodiment 2 of the present invention；
Fig. 4 is the implementation flow chart of the production method for the tri compound graph substrate that the embodiment of the present invention three provides；
Fig. 5 is the manufacturing process schematic diagram for the tri compound graph substrate that the embodiment of the present invention three provides.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 shows the implementation flow chart of the production method of tri compound graph substrate provided by the invention, specific to wrap
Include following step:
In step s101, a sapphire substrate cleaned up is obtained, wherein clean the molten of the sapphire substrate of selection
Liquid is dioxysulfate water.
In step s 102, the graph layer of one layer of regular arrangement is made on the sapphire substrate, forms binary pattern
Shape substrate.
In step s 103, sputtering forms one layer of aluminium nitride composite layer on the graphical sapphire substrate, forms three
First compound pattern substrate；Wherein, the aluminium nitride composite layer with a thickness of 10-500nm.
Wherein, Fig. 1 only gives one of implementation provided by the invention, in order to which the tri compound figure is described in detail
The production method of shape substrate, two kinds of concrete implementation schemes of following combinations.
Fig. 2 shows the implementation flow chart of the production method of tri compound graph substrate provided by Embodiment 2 of the present invention,
And as shown in connection with fig. 3, specifically include the following steps:
In step s 201, a sapphire substrate is taken, is cleaned up with dioxysulfate water.
In step S202, the photoresist of one layer of high silicon is coated on sapphire substrate, then by high-temperature oxydation high
The photoresist of silicon switchs to silicon dioxide layer, wherein 100nm-5 microns of high silicon photoresist thickness, the temperature of high-temperature oxydation is in 600-
1200 degrees Celsius, as shown in Figure 3a.
In step S203, a layer photoresist is coated in silicon dioxide layer, by the mask plate patterns of preparatory rule design
It is transferred on the photoresist layer of coating, forms one layer of photo etched mask figure layer, as shown in Figure 3b.
In step S204, the silica layer region of no photoresist protection is removed, to the silicon dioxide layer
It carries out pattern etching and forms preliminary graphical sapphire substrate, as shown in the change procedure of Fig. 3 b to Fig. 3 c.
Wherein, no photoresist is removed using microelectronics dry etching (Reactive Ion Etching, RIE) etching to protect
The exposure mask layer region of shield, etches high silicon graphics and carrys out figure.
In step S205, extra photoresist is removed on the preliminary graphical sapphire substrate of formation, that is, is used
Wet solution removes extra photoresist, as shown in the change procedure of Fig. 3 c to Fig. 3 d.
In step S206, using wet-cleaning, the graphic sapphire after removal photoresist is cleaned, obtains two
Element pattern substrate.
In step S207, one layer of aluminium nitride is deposited in binary graph substrate using sputtering equipment, forms tri compound
Graph substrate, with a thickness of 10-500nm, so far prepared by a kind of compound substrate of low cost to be completed, as shown in Figure 3 e.
The above-mentioned preparation method for providing a kind of Sapphire Substrate, wherein the preparation of the Sapphire Substrate can use wet process
Corrosion can also use dry etching, and following schemes as shown in connection with fig. 2 provide the specific implementation principle of two kinds of corrosion:
The first: wet etching example
1, a sapphire plain film is selected；
2, using containing SiH on sapphire plain film4And N2O gas deposits one layer using plasma enhanced chemical vapor chemical deposition
The SiO of 10-5000nm2Layer；
3, in SiO2A layer photoresist is coated on layer, using photoetching technique, photoetching is carried out to the region of not figure, and is made
There is the region of figure to be photo-etched glue protection；
4, using BOE (the HF/NH4F mixed solution of 1:6) under the protection of photoresist figure layer to SiO2Mask layer carries out rotten
Erosion, obtains the SiO with certain structure2Mask layer；
5, photoresist is removed using wet solution；
6, wet-cleaning Sapphire Substrate is utilized；
7, on a sapphire substrate sputter one layer of aluminium nitride composite layer, formed tri compound substrate, the aluminium nitride with a thickness of
10-500nm。
Second: dry etching
1, a sapphire plain film is selected；
2, using containing SiH on sapphire plain film4And N2O gas deposits one layer using plasma enhanced chemical vapor chemical deposition
The SiO of 10-5000nm2Layer；
3, in SiO2A layer photoresist is coated on layer, using photoetching technique, photoetching is carried out to the region of not figure, and is made
There is the region of figure to be photo-etched glue protection；
4, CF is used using RIE4Or the gases such as SF6 are to SiO2Mask layer performs etching, and obtains the SiO with certain structure2
Mask layer；
5, wet-cleaning Sapphire Substrate is utilized；
6, one layer of aluminium nitride composite layer is sputtered on a sapphire substrate, forms tri compound substrate, aluminium nitride is with a thickness of 10-
500nm。
It is above-mentioned to simply show two kinds of concrete implementation schemes, herein not to limit the present invention.
Fig. 4 shows the implementation flow chart of the production method of the tri compound graph substrate of the offer of the embodiment of the present invention three,
And as shown in connection with fig. 5, specifically include the following steps:
In step S301, a sapphire substrate cleaned up is obtained；
In step s 302, a layer photoresist is coated in the sapphire substrate of selection, using photoetching technique, generates one
Layer photo etched mask figure layer, as shown in Figure 5 a；
In step S303, one layer of low folding is filled in the photo etched mask figure layer and the sapphire substrate for having figure
The substance of rate is penetrated, as shown in Figure 5 b；
In this step, one layer of low folding is deposited on the sapphire substrate with pattern mask in the way of vapor deposition or sputtering
The substance of rate is penetrated, the substance of the low-refraction includes SiO2, SiNx and TiO；In deposition process, the low-refraction
Substance be filled on the sapphire substrate of figure and the graphic mask on.
In step s 304, the photoresist coated on the sapphire substrate is removed, the substance shape of the low-refraction is made
The graphic mask of Cheng Xin, as shown in the change procedure of Fig. 5 b to Fig. 5 c；
In step S305, the new graphic mask of formation is cleaned, binary graph substrate is generated；
In step S306, sputtering forms one layer of aluminium nitride composite layer in the binary graph substrate, and it is multiple to generate ternary
Substrate is closed, as fig 5d.
In embodiments of the present invention, it is made using the present invention above-mentioned with compound graphical sapphire substrate application
Extensively, it can be used for the substrate of gallium nitride based light emitting diode Material growth, the compound substrate top layer aln structure and nitrogen
Change gallium structure it is similar, can the material stress effectively to gallium nitride base be released effectively, reduce GaN growth defect；The bottom simultaneously
Sapphire structures figure layer it is more significant to the improvement of the light extraction efficiency of light emitting diode, which can be more general than using
45% or more the luminance raising of the gallium nitride based light emitting diode of logical sapphire plain film substrate growth.This method can prepare compound
The simple process and low cost of Sapphire Substrate, especially having very high to the compound pattern substrate production of large scale wafer is industry
Change prospect.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (6)
1. a kind of production method of tri compound graph substrate, which is characterized in that the method includes the following steps:
Obtain a sapphire substrate cleaned up；
The graph layer that one layer of regular arrangement is made on the sapphire substrate, forms binary graph substrate；
One layer of aluminium nitride composite layer is sputtered in the binary graph substrate of formation, forms tri compound graph substrate.
2. the production method of tri compound graph substrate according to claim 1, which is characterized in that described described blue precious
On ground mass plate make one layer of regular arrangement graph layer, formed binary graph substrate the step of specifically include the following steps:
The photoresist of one layer of high silicon is coated on the sapphire substrate of selection, and is switched to the photoresist of high silicon by high-temperature oxydation
Silicon dioxide layer；
A layer photoresist is coated in the silicon dioxide layer, and the mask plate patterns of preparatory rule design are transferred to the light of coating
On photoresist layer, one layer of photo etched mask figure layer is formed；
The silica layer region for removing no photoresist protection, carries out pattern etching to the silicon dioxide layer and is formed just
The graphical sapphire substrate of step；
Extra photoresist is removed on the preliminary graphical sapphire substrate of formation；
Graphic sapphire after removal photoresist is cleaned, the binary graph substrate is obtained.
3. the production method of tri compound graph substrate according to claim 2, which is characterized in that the high silicon photoresist
100nm-5 microns of thickness, the temperature of high-temperature oxydation is at 600-1200 degrees Celsius.
4. the production method of tri compound graph substrate according to claim 1, which is characterized in that described described blue precious
On ground mass plate make one layer of regular arrangement graph layer, formed binary graph substrate the step of specifically include the following steps:
A layer photoresist, which is coated, in the sapphire substrate of selection generates one layer of photo etched mask figure layer using photoetching technique；
The substance of one layer of low-refraction is filled in the photo etched mask figure layer and the sapphire substrate for having figure；
The photoresist coated on the sapphire substrate is removed, the substance of the low-refraction is made to form new graphic mask；
The new graphic mask that cleaning is formed, generates the binary graph substrate.
5. the production method of tri compound graph substrate according to claim 4, which is characterized in that the low-refraction
Substance includes SiO2, SiNx and TiO.
6. the production method of tri compound graph substrate according to claim 1, which is characterized in that the aluminium nitride is compound
Layer with a thickness of 10-500nm.
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| CN201810762724.8A CN108987541A (en) | 2018-07-12 | 2018-07-12 | A kind of production method of tri compound graph substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935514A (en) * | 2019-03-19 | 2019-06-25 | 湘能华磊光电股份有限公司 | The recasting method of graphical sapphire substrate scrap |
| CN115332414A (en) * | 2022-10-13 | 2022-11-11 | 元旭半导体科技股份有限公司 | Novel sapphire composite substrate and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576845A (en) * | 2014-12-16 | 2015-04-29 | 深圳市德上光电有限公司 | Producing method for graphical sapphire substrate |
| CN105261682A (en) * | 2015-10-16 | 2016-01-20 | 山东元旭光电有限公司 | Sapphire composite substrate and preparing method thereof |
| CN105428470A (en) * | 2015-11-11 | 2016-03-23 | 山东元旭光电有限公司 | High-brightness epitaxial chip structure and preparation method |
-
2018
- 2018-07-12 CN CN201810762724.8A patent/CN108987541A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576845A (en) * | 2014-12-16 | 2015-04-29 | 深圳市德上光电有限公司 | Producing method for graphical sapphire substrate |
| CN105261682A (en) * | 2015-10-16 | 2016-01-20 | 山东元旭光电有限公司 | Sapphire composite substrate and preparing method thereof |
| CN105428470A (en) * | 2015-11-11 | 2016-03-23 | 山东元旭光电有限公司 | High-brightness epitaxial chip structure and preparation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935514A (en) * | 2019-03-19 | 2019-06-25 | 湘能华磊光电股份有限公司 | The recasting method of graphical sapphire substrate scrap |
| CN115332414A (en) * | 2022-10-13 | 2022-11-11 | 元旭半导体科技股份有限公司 | Novel sapphire composite substrate and manufacturing method thereof |
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