TW200620370A - Irradiation system with ion beam/charged particle beam - Google Patents

Irradiation system with ion beam/charged particle beam

Info

Publication number
TW200620370A
TW200620370A TW094128052A TW94128052A TW200620370A TW 200620370 A TW200620370 A TW 200620370A TW 094128052 A TW094128052 A TW 094128052A TW 94128052 A TW94128052 A TW 94128052A TW 200620370 A TW200620370 A TW 200620370A
Authority
TW
Taiwan
Prior art keywords
deflection
electrodes
magnet
charged particle
irradiation system
Prior art date
Application number
TW094128052A
Other languages
English (en)
Other versions
TWI387992B (zh
Inventor
Takanori Yagita
Takashi Nishi
Michiro Sugitani
Junichi Murakami
Mitsukuni Tsukihara
Mitsuaki Kabasawai
Masaki Ishikawa
Tetsuya Kudo
Original Assignee
Sumitomo Eaton Nova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova filed Critical Sumitomo Eaton Nova
Publication of TW200620370A publication Critical patent/TW200620370A/zh
Application granted granted Critical
Publication of TWI387992B publication Critical patent/TWI387992B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Tubes For Measurement (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
TW094128052A 2004-11-30 2005-08-17 具有離子束／電荷粒子束的照射系統 TWI387992B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004346309A JP4964413B2 (ja) 2004-11-30 2004-11-30 イオンビーム／荷電粒子ビーム照射装置

Publications (2)

Publication Number Publication Date
TW200620370A true TW200620370A (en) 2006-06-16
TWI387992B TWI387992B (zh) 2013-03-01

Family

ID=36045774

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128052A TWI387992B (zh) 2004-11-30 2005-08-17 具有離子束／電荷粒子束的照射系統

Country Status (5)

Country Link
US (1) US7315034B2 (zh)
EP (1) EP1662542B1 (zh)
JP (1) JP4964413B2 (zh)
KR (1) KR101226505B1 (zh)
TW (1) TWI387992B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113498246A (zh) * 2020-03-18 2021-10-12 住友重机械工业株式会社 粒子束装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
JP4954465B2 (ja) * 2004-11-30 2012-06-13 株式会社Ｓｅｎ イオンビーム／荷電粒子ビーム照射装置
JP5329050B2 (ja) * 2007-04-20 2013-10-30 株式会社Ｓｅｎ ビーム処理装置
JP5511567B2 (ja) * 2010-07-22 2014-06-04 三菱電機株式会社 粒子線照射装置及び粒子線治療装置
JP6045445B2 (ja) * 2013-06-14 2016-12-14 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置
JP6080706B2 (ja) * 2013-06-24 2017-02-15 住友重機械イオンテクノロジー株式会社 高周波加速式のイオン加速・輸送装置
JP6053611B2 (ja) 2013-05-27 2016-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置
US9245726B1 (en) * 2014-09-25 2016-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlling charged particles with inhomogeneous electrostatic fields
JP6719833B2 (ja) 2017-03-08 2020-07-08 住友重機械イオンテクノロジー株式会社 絶縁構造
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
JP6813048B2 (ja) * 2019-03-27 2021-01-13 日新イオン機器株式会社 質量分離器

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JPS5249774A (en) * 1975-10-20 1977-04-21 Hitachi Ltd Ion implanting device
JPS56156662A (en) * 1980-05-02 1981-12-03 Hitachi Ltd Device for ion implantation
JPH077657B2 (ja) * 1984-10-29 1995-01-30 日新電機株式会社 イオン注入装置
JPH0625927Y2 (ja) * 1986-05-22 1994-07-06 日新電機株式会社 Ｈ形分析電磁石
JPH01282499A (ja) * 1988-05-07 1989-11-14 Mitsubishi Electric Corp 荷電粒子装置用偏向電磁石
JPH025341A (ja) * 1988-06-15 1990-01-10 Teru Barian Kk イオン注入装置
JPH02260359A (ja) * 1989-03-31 1990-10-23 Ulvac Corp 平行走査用イオン注入装置
JPH0317946A (ja) * 1989-06-14 1991-01-25 Ulvac Corp イオン注入装置
JPH03272557A (ja) * 1990-03-20 1991-12-04 Nissin Electric Co Ltd イオン注入装置
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
JP2754425B2 (ja) * 1990-11-06 1998-05-20 富士電機株式会社 イオン注入装置における混入イオンの分析方法
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
JPH08212965A (ja) * 1995-01-31 1996-08-20 Ulvac Japan Ltd イオン注入装置
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
JP4026789B2 (ja) * 1998-04-02 2007-12-26 株式会社アルバック イオン注入方法
US6075249A (en) * 1998-06-19 2000-06-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanning and focusing an ion beam
US6946667B2 (en) * 2000-03-01 2005-09-20 Advanced Ion Beam Technology, Inc. Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
US7300559B2 (en) * 2000-04-10 2007-11-27 G & H Technologies Llc Filtered cathodic arc deposition method and apparatus
US6639227B1 (en) * 2000-10-18 2003-10-28 Applied Materials, Inc. Apparatus and method for charged particle filtering and ion implantation
JP3840108B2 (ja) * 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオンビーム処理方法及び処理装置
JP3738734B2 (ja) * 2002-02-06 2006-01-25 日新電機株式会社 静電加速管およびそれを備えるイオン注入装置
JP3680274B2 (ja) * 2002-03-27 2005-08-10 住友イートンノバ株式会社 イオンビームの電荷中和装置とその方法
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US6770888B1 (en) * 2003-05-15 2004-08-03 Axcelis Technologies, Inc. High mass resolution magnet for ribbon beam ion implanters
US7105839B2 (en) * 2003-10-15 2006-09-12 White Nicholas R Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113498246A (zh) * 2020-03-18 2021-10-12 住友重机械工业株式会社 粒子束装置

Also Published As

Publication number Publication date
US20060113467A1 (en) 2006-06-01
JP4964413B2 (ja) 2012-06-27
EP1662542A2 (en) 2006-05-31
KR20060060557A (ko) 2006-06-05
US7315034B2 (en) 2008-01-01
EP1662542B1 (en) 2012-08-15
EP1662542A3 (en) 2008-12-31
KR101226505B1 (ko) 2013-01-25
TWI387992B (zh) 2013-03-01
JP2006156184A (ja) 2006-06-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees