TW200607753A - Nanostructures and method of making the same - Google Patents

Nanostructures and method of making the same

Info

Publication number
TW200607753A
TW200607753A TW094129124A TW94129124A TW200607753A TW 200607753 A TW200607753 A TW 200607753A TW 094129124 A TW094129124 A TW 094129124A TW 94129124 A TW94129124 A TW 94129124A TW 200607753 A TW200607753 A TW 200607753A
Authority
TW
Taiwan
Prior art keywords
nano
nanostructures
making
same
template
Prior art date
Application number
TW094129124A
Other languages
English (en)
Inventor
Soo-Jin Chua
Peng Chen
ya-dong Wang
Original Assignee
Agency Science Tech & Res
Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res, Univ Singapore filed Critical Agency Science Tech & Res
Publication of TW200607753A publication Critical patent/TW200607753A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW094129124A 2004-08-31 2005-08-25 Nanostructures and method of making the same TW200607753A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2004/000274 WO2006025793A1 (en) 2004-08-31 2004-08-31 Nanostructures and method of making the same

Publications (1)

Publication Number Publication Date
TW200607753A true TW200607753A (en) 2006-03-01

Family

ID=36000340

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129124A TW200607753A (en) 2004-08-31 2005-08-25 Nanostructures and method of making the same

Country Status (6)

Country Link
US (1) US20080318003A1 (zh)
JP (1) JP2008511985A (zh)
KR (2) KR101199254B1 (zh)
CN (1) CN101065831B (zh)
TW (1) TW200607753A (zh)
WO (1) WO2006025793A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480225B (zh) * 2011-12-22 2015-04-11 Ind Tech Res Inst 分子檢測感測器之微奈米金屬結構及其製作方法

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WO2008048704A2 (en) 2006-03-10 2008-04-24 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
US7829443B2 (en) 2007-01-12 2010-11-09 Qunano Ab Nitride nanowires and method of producing such
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
KR100902512B1 (ko) * 2007-05-17 2009-06-15 삼성코닝정밀유리 주식회사 실리콘 기판 상에 ＧａＮ 단결정의 성장 방법, ＧａＮ기반의 발광소자의 제조방법 및 ＧａＮ 기반의 발광소자
JP5515079B2 (ja) * 2007-11-27 2014-06-11 学校法人上智学院 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物構造体の製造方法
KR100987331B1 (ko) * 2008-04-30 2010-10-13 성균관대학교산학협력단 액상 증착 기술을 이용한 나노구조체의 제조방법 및 그에의해 제조된 나노구조체
US8518837B2 (en) * 2008-09-25 2013-08-27 The University Of Massachusetts Method of producing nanopatterned articles using surface-reconstructed block copolymer films
KR101588852B1 (ko) * 2008-10-31 2016-01-26 삼성전자주식회사 반도체 소자 및 그 형성방법
CN101574670B (zh) * 2009-06-05 2011-06-08 东华大学 一种三维纳米负载型催化剂的制备方法
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WO2011109702A2 (en) * 2010-03-05 2011-09-09 Cornell University Monocrystalline epitaxially aligned nanostructures and related methods
CN101870453A (zh) * 2010-05-19 2010-10-27 中国科学院半导体研究所 半导体纳米柱阵列结构的制作方法
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CN101830430B (zh) * 2010-05-24 2013-03-27 山东大学 一种大面积、高度均匀有序量子点阵列制造方法
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US20170267520A1 (en) 2010-10-21 2017-09-21 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
WO2012054043A1 (en) 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Nano-structure and method of making the same
US9751755B2 (en) * 2010-10-21 2017-09-05 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
EP2571065A4 (en) * 2010-12-08 2016-03-23 El Seed Corp GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
KR20130002527A (ko) 2011-06-29 2013-01-08 엘지이노텍 주식회사 나노와이어 제조방법
KR101220243B1 (ko) 2011-08-22 2013-01-09 국민대학교산학협력단 미세구조 및 그 제조 방법
TW201310081A (zh) * 2011-08-25 2013-03-01 Nat Univ Tsing Hua 微奈米複合結構及其製作方法
CN102290435B (zh) * 2011-09-14 2013-11-06 青岛理工大学 一种大面积量子点及其阵列制造方法
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CN105810848B (zh) * 2016-03-16 2017-12-19 京东方科技集团股份有限公司 一种量子点层的制备方法及含有量子点层的qled显示装置、制备方法
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TWI480225B (zh) * 2011-12-22 2015-04-11 Ind Tech Res Inst 分子檢測感測器之微奈米金屬結構及其製作方法

Also Published As

Publication number Publication date
CN101065831B (zh) 2011-05-04
US20080318003A1 (en) 2008-12-25
WO2006025793A1 (en) 2006-03-09
JP2008511985A (ja) 2008-04-17
KR20070069144A (ko) 2007-07-02
CN101065831A (zh) 2007-10-31
KR101169307B1 (ko) 2012-07-30
KR20110093906A (ko) 2011-08-18
KR101199254B1 (ko) 2012-11-09

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