TW200603214A - Substrate for thin film solar cell, manufacturing method therefor, and thin film solar cell using the same - Google Patents

Substrate for thin film solar cell, manufacturing method therefor, and thin film solar cell using the same

Info

Publication number
TW200603214A
TW200603214A TW094108803A TW94108803A TW200603214A TW 200603214 A TW200603214 A TW 200603214A TW 094108803 A TW094108803 A TW 094108803A TW 94108803 A TW94108803 A TW 94108803A TW 200603214 A TW200603214 A TW 200603214A
Authority
TW
Taiwan
Prior art keywords
thin film
solar cell
film solar
substrate
irregularity
Prior art date
Application number
TW094108803A
Other languages
English (en)
Inventor
Toshiaki Sasaki
Yohei Koi
Yuko Tawada
Kenji Yamamoto
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Publication of TW200603214A publication Critical patent/TW200603214A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
TW094108803A 2004-03-25 2005-03-22 Substrate for thin film solar cell, manufacturing method therefor, and thin film solar cell using the same TW200603214A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004089817 2004-03-25

Publications (1)

Publication Number Publication Date
TW200603214A true TW200603214A (en) 2006-01-16

Family

ID=35056488

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108803A TW200603214A (en) 2004-03-25 2005-03-22 Substrate for thin film solar cell, manufacturing method therefor, and thin film solar cell using the same

Country Status (5)

Country Link
US (1) US7781668B2 (zh)
EP (1) EP1732139B1 (zh)
JP (1) JP5600660B2 (zh)
TW (1) TW200603214A (zh)
WO (1) WO2005093854A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102037566A (zh) * 2008-05-23 2011-04-27 株式会社钟化 薄膜光电转换装置用基板和包括它的薄膜光电转换装置、以及薄膜光电转换装置用基板的制造方法
CN103392235A (zh) * 2010-12-27 2013-11-13 艾思科集团有限公司 用于制作包括tco层的光伏装置的改进方法

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JP2008066437A (ja) * 2006-09-06 2008-03-21 Mitsubishi Heavy Ind Ltd 太陽電池パネルの製造方法
EP2084752B1 (en) * 2006-11-20 2016-08-17 Kaneka Corporation Method for manufacturing a substrate provided with a transparent conductive film for thin film solar cells
JP5291633B2 (ja) * 2007-11-30 2013-09-18 株式会社カネカ シリコン系薄膜光電変換装置およびその製造方法
KR101460580B1 (ko) * 2008-02-20 2014-11-12 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP5757738B2 (ja) * 2008-02-29 2015-07-29 アーケマ・インコーポレイテッド 高効率光電池モジュール
US20090242020A1 (en) * 2008-04-01 2009-10-01 Seung-Yeop Myong Thin-film photovoltaic cell, thin-film photovoltaic module and method of manufacturing thin-film photovoltaic cell
US20090266399A1 (en) * 2008-04-28 2009-10-29 Basol Bulent M Metallic foil substrate and packaging technique for thin film solar cells and modules
US8207012B2 (en) * 2008-04-28 2012-06-26 Solopower, Inc. Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20090266398A1 (en) * 2008-04-28 2009-10-29 Burak Metin Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells
WO2010022530A1 (en) * 2008-09-01 2010-03-04 Oerlikon Solar Ip Ag, Trübbach Method for manufacturing transparent conductive oxide (tco) films; properties and applications of such films
JP5180781B2 (ja) * 2008-11-05 2013-04-10 三菱重工業株式会社 光電変換装置の製造方法および光電変換装置
JP2010114190A (ja) * 2008-11-05 2010-05-20 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法および光電変換装置
WO2010072862A1 (es) * 2008-12-22 2010-07-01 Universidad De Barcelona Células solares de película delgada con texturas combinadas
US9059422B2 (en) 2009-02-03 2015-06-16 Kaneka Corporation Substrate with transparent conductive film and thin film photoelectric conversion device
KR20100093240A (ko) * 2009-02-16 2010-08-25 엘지디스플레이 주식회사 박막 태양전지 및 그 제조방법
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
US20100288335A1 (en) * 2009-10-02 2010-11-18 Sunlight Photonics Inc. Degradation-resistant photovoltaic devices
WO2011061950A1 (ja) * 2009-11-17 2011-05-26 三菱電機株式会社 薄膜太陽電池およびその製造方法
US20110120555A1 (en) * 2009-11-23 2011-05-26 Nicholas Francis Borrelli Photovoltaic devices and light scattering superstrates
US9224892B2 (en) 2009-12-21 2015-12-29 Ppg Industries Ohio, Inc. Silicon thin film solar cell having improved haze and methods of making the same
FR2957342B1 (fr) * 2010-03-12 2014-11-21 Saint Gobain Substrat transparent verrier associe a une couche electroconductrice transparente a proprietes electriques ameliorees
US20110259413A1 (en) * 2010-04-21 2011-10-27 Stion Corporation Hazy Zinc Oxide Film for Shaped CIGS/CIS Solar Cells
WO2011159675A1 (en) * 2010-06-14 2011-12-22 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State Process to form aqueous precursor and aluminum oxide film
WO2011160031A2 (en) * 2010-06-18 2011-12-22 University Of Florida Research Foundation, Inc. Thin film photovoltaic devices with microlens arrays
DE102010030301A1 (de) * 2010-06-21 2011-12-22 Solayer Gmbh Substrat mit oberflächlich strukturierter Flächenelektrode
DE102010024521A1 (de) * 2010-06-21 2011-12-22 Innovent E.V. Verfahren zur Erhöhung der Transluzenz eines Substrats
FR2961952B1 (fr) * 2010-06-23 2013-03-29 Commissariat Energie Atomique Substrat comprenant une couche d'oxyde transparent conducteur et son procede de fabrication
JP5719846B2 (ja) 2010-07-28 2015-05-20 株式会社カネカ 薄膜太陽電池用透明電極、それを用いた薄膜太陽電池用透明電極付き基板および薄膜太陽電池、ならびに薄膜太陽電池用透明電極の製造方法
JP5533448B2 (ja) * 2010-08-30 2014-06-25 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP2012064723A (ja) * 2010-09-15 2012-03-29 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法
TWI418043B (zh) * 2011-04-14 2013-12-01 Nexpower Technology Corp 薄膜太陽能電池
WO2013002394A1 (ja) * 2011-06-30 2013-01-03 株式会社カネカ 薄膜太陽電池およびその製造方法
KR20130028578A (ko) 2011-09-09 2013-03-19 삼성전자주식회사 광결정 구조체, 이의 제조방법, 광결정 구조체를 채용한 반사형 컬러필터 및 디스플레이 장치.
US8916409B2 (en) * 2011-10-18 2014-12-23 International Business Machines Corporation Photovoltaic device using nano-spheres for textured electrodes
EP2891186A1 (en) * 2012-08-29 2015-07-08 Danmarks Tekniske Universitet Photovoltaic mounting/demounting unit
KR20150005357A (ko) * 2013-07-05 2015-01-14 삼성디스플레이 주식회사 컬러필터 기판 및 그 제조방법과 이를 포함하는 표시장치 및 그 제조 방법
US9748423B2 (en) * 2014-01-16 2017-08-29 Fundacio Institut De Ciencies Fotoniques Photovoltaic device with fiber array for sun tracking
DE102014217165A1 (de) * 2014-08-28 2016-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, Verfahren zu deren Herstellung und deren Verwendung
US10513442B2 (en) 2015-07-09 2019-12-24 University Of Oregon Synthesis of M13 clusters from aluminum and gallium mineral polymorphs
WO2019069643A1 (ja) * 2017-10-04 2019-04-11 株式会社カネカ 太陽電池の製造方法、太陽電池および太陽電池モジュール
KR102583562B1 (ko) * 2017-12-27 2023-09-26 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기
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JP2022123516A (ja) * 2021-02-12 2022-08-24 Ａｇｃ株式会社 太陽電池用ガラス基板及び太陽電池

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102037566A (zh) * 2008-05-23 2011-04-27 株式会社钟化 薄膜光电转换装置用基板和包括它的薄膜光电转换装置、以及薄膜光电转换装置用基板的制造方法
US8658885B2 (en) 2008-05-23 2014-02-25 Kaneka Corporation Substrate for thin-film photoelectric conversion device, thin film photoelectric conversion device including the same, and method for producing substrate for thin-film photoelectric conversion device
CN102037566B (zh) * 2008-05-23 2014-10-22 株式会社钟化 薄膜光电转换装置用基板和包括它的薄膜光电转换装置、以及薄膜光电转换装置用基板的制造方法
CN103392235A (zh) * 2010-12-27 2013-11-13 艾思科集团有限公司 用于制作包括tco层的光伏装置的改进方法

Also Published As

Publication number Publication date
US7781668B2 (en) 2010-08-24
US20070169805A1 (en) 2007-07-26
JP5600660B2 (ja) 2014-10-01
JP2012028827A (ja) 2012-02-09
EP1732139A4 (en) 2015-10-21
EP1732139B1 (en) 2018-12-12
WO2005093854A1 (ja) 2005-10-06
EP1732139A1 (en) 2006-12-13

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