IN2012DN01227A - - Google Patents
Info
- Publication number
- IN2012DN01227A IN2012DN01227A IN1227DEN2012A IN2012DN01227A IN 2012DN01227 A IN2012DN01227 A IN 2012DN01227A IN 1227DEN2012 A IN1227DEN2012 A IN 1227DEN2012A IN 2012DN01227 A IN2012DN01227 A IN 2012DN01227A
- Authority
- IN
- India
- Prior art keywords
- oxide layer
- tin oxide
- solar cell
- transparent conductive
- silicon oxide
- Prior art date
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 5
- 229910001887 tin oxide Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009177702 | 2009-07-30 | ||
JP2010154101 | 2010-07-06 | ||
PCT/JP2010/062850 WO2011013775A1 (ja) | 2009-07-30 | 2010-07-29 | 太陽電池用透明導電性基板および太陽電池 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN01227A true IN2012DN01227A (zh) | 2015-04-10 |
Family
ID=43529427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1227DEN2012 IN2012DN01227A (zh) | 2009-07-30 | 2010-07-29 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20120125432A1 (zh) |
EP (1) | EP2461373A1 (zh) |
JP (1) | JPWO2011013775A1 (zh) |
KR (1) | KR20120037952A (zh) |
CN (1) | CN102473745A (zh) |
IN (1) | IN2012DN01227A (zh) |
TW (1) | TW201117391A (zh) |
WO (1) | WO2011013775A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012182161A (ja) * | 2011-02-28 | 2012-09-20 | Ulvac Japan Ltd | 薄膜太陽電池、及び薄膜太陽電池の製造方法 |
JPWO2012169602A1 (ja) * | 2011-06-08 | 2015-02-23 | 旭硝子株式会社 | 透明導電膜付き基板 |
US11024736B2 (en) | 2019-08-09 | 2021-06-01 | Micron Technology, Inc. | Transistor and methods of forming integrated circuitry |
US10964811B2 (en) | 2019-08-09 | 2021-03-30 | Micron Technology, Inc. | Transistor and methods of forming transistors |
CN114270530A (zh) | 2019-08-09 | 2022-04-01 | 美光科技公司 | 晶体管及形成晶体管的方法 |
CN114556606A (zh) * | 2019-12-24 | 2022-05-27 | 松下知识产权经营株式会社 | 太阳能电池 |
US11637175B2 (en) | 2020-12-09 | 2023-04-25 | Micron Technology, Inc. | Vertical transistors |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4460108B2 (ja) | 1999-05-18 | 2010-05-12 | 日本板硝子株式会社 | 光電変換装置用基板の製造方法 |
JP2002260448A (ja) | 2000-11-21 | 2002-09-13 | Nippon Sheet Glass Co Ltd | 導電膜、その製造方法、それを備えた基板および光電変換装置 |
EP1624494A4 (en) | 2003-05-13 | 2007-10-10 | Asahi Glass Co Ltd | TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR BATTERY AND PROCESS FOR PRODUCING THE SAME |
WO2005027229A1 (ja) * | 2003-08-29 | 2005-03-24 | Asahi Glass Company, Limited | 透明導電膜付き基体およびその製造方法 |
KR20080074086A (ko) | 2005-11-17 | 2008-08-12 | 아사히 가라스 가부시키가이샤 | 태양 전지용 투명 도전성 기판 및 그 제조 방법 |
JP2009177702A (ja) | 2008-01-28 | 2009-08-06 | Nec Corp | 情報通信システム、端末、アクセス装置、加入者情報収容装置、サービスプロファイル送信方法及びプログラム |
JP2010154101A (ja) | 2008-12-24 | 2010-07-08 | Olympus Imaging Corp | 撮像装置および撮像装置用プログラム |
-
2010
- 2010-07-29 WO PCT/JP2010/062850 patent/WO2011013775A1/ja active Application Filing
- 2010-07-29 IN IN1227DEN2012 patent/IN2012DN01227A/en unknown
- 2010-07-29 CN CN2010800336671A patent/CN102473745A/zh active Pending
- 2010-07-29 KR KR1020127001808A patent/KR20120037952A/ko not_active Application Discontinuation
- 2010-07-29 JP JP2011524839A patent/JPWO2011013775A1/ja not_active Withdrawn
- 2010-07-29 EP EP10804521A patent/EP2461373A1/en not_active Withdrawn
- 2010-07-30 TW TW099125335A patent/TW201117391A/zh unknown
-
2012
- 2012-01-30 US US13/360,915 patent/US20120125432A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN102473745A (zh) | 2012-05-23 |
KR20120037952A (ko) | 2012-04-20 |
JPWO2011013775A1 (ja) | 2013-01-10 |
US20120125432A1 (en) | 2012-05-24 |
EP2461373A1 (en) | 2012-06-06 |
TW201117391A (en) | 2011-05-16 |
WO2011013775A1 (ja) | 2011-02-03 |
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