WO2010086135A3 - Dünnschichtsolarzelle - Google Patents

Dünnschichtsolarzelle Download PDF

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Publication number
WO2010086135A3
WO2010086135A3 PCT/EP2010/000440 EP2010000440W WO2010086135A3 WO 2010086135 A3 WO2010086135 A3 WO 2010086135A3 EP 2010000440 W EP2010000440 W EP 2010000440W WO 2010086135 A3 WO2010086135 A3 WO 2010086135A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
structured
thin film
solar cell
film solar
Prior art date
Application number
PCT/EP2010/000440
Other languages
English (en)
French (fr)
Other versions
WO2010086135A2 (de
Inventor
Eveline Rudigier
Matthias Bockmeyer
Stefan Bauer
Volker Hagemann
Original Assignee
Schott Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Ag filed Critical Schott Ag
Publication of WO2010086135A2 publication Critical patent/WO2010086135A2/de
Publication of WO2010086135A3 publication Critical patent/WO2010086135A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Auf das transparente Substrat (1) einer Dünnschichtsolarzelle ist eine strukturierte Schicht (2) aus einer nach dem Sol-Gel-Verfahren erhaltenen Matrix und Struktur gebenden Partikeln aufgebracht. Darauf werden nacheinander mehrere Schichten, einschließlich einer Frontelektrodenschicht (3), wenigstens einer Halbleiterschicht (4) und einer Rückelektrodenschicht (12) abgeschieden. Die strukturierte Schicht (2) bildet damit ein Textur-Templat für die verschiedenen Schichten, einschließlich der Frontelektroden- (3) und Rückelektrodenschicht (12), die damit jeweils eine strukturierte, lichtstreuende Oberfläche erhalten. Die strukturierte Schicht (2) weist eine Brechzahl auf, die größer ist als die Brechzahl des Substrats (1) und höchstens so groß wie die Brechzahl der Frontelektrodenschicht (3).
PCT/EP2010/000440 2009-01-29 2010-01-26 Dünnschichtsolarzelle WO2010086135A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009006718.3 2009-01-29
DE102009006718A DE102009006718A1 (de) 2009-01-29 2009-01-29 Dünnschichtsolarzelle

Publications (2)

Publication Number Publication Date
WO2010086135A2 WO2010086135A2 (de) 2010-08-05
WO2010086135A3 true WO2010086135A3 (de) 2010-10-14

Family

ID=42317317

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/000440 WO2010086135A2 (de) 2009-01-29 2010-01-26 Dünnschichtsolarzelle

Country Status (2)

Country Link
DE (1) DE102009006718A1 (de)
WO (1) WO2010086135A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010013038B4 (de) * 2010-03-26 2012-01-19 Schüco Tf Gmbh & Co. Kg Verfahren zum Herstellen einer Fotovoltaikzelle
WO2012030696A1 (en) * 2010-08-31 2012-03-08 Corning Incorporated Process for particle doping of scattering superstrates
WO2012078064A1 (pt) * 2010-12-10 2012-06-14 Revigrés - Indústria De Revestimentos De Grés, Lda Revestimentos cerâmicos fotovoltaicos, em particular azulejos, telhas, e mosaicos, e seu processo de fabrico
DE102011003677B4 (de) * 2011-02-04 2015-09-24 Schott Ag Verbundstoff, Verfahren zu seiner Herstellung und Verwendung des Verbundstoffes
US20140124030A1 (en) * 2011-06-30 2014-05-08 Kaneka Corporation Thin film solar cell and method for manufacturing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326903A (ja) * 1997-05-23 1998-12-08 Sharp Corp 微粒子塗布膜およびそれを用いた光電変換素子と光拡散体
US6420647B1 (en) * 1998-11-06 2002-07-16 Pacific Solar Pty Limited Texturing of glass by SiO2 film
JP2003243676A (ja) * 2002-02-19 2003-08-29 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
US6335479B1 (en) * 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326903A (ja) * 1997-05-23 1998-12-08 Sharp Corp 微粒子塗布膜およびそれを用いた光電変換素子と光拡散体
US6420647B1 (en) * 1998-11-06 2002-07-16 Pacific Solar Pty Limited Texturing of glass by SiO2 film
JP2003243676A (ja) * 2002-02-19 2003-08-29 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ELAM J W ET AL: "Properties of ZnO/Al2O3 alloy films grown using atomic layer deposition techniques", JOURNAL OF THE ELECTROCHEMICAL SOCIETY ELECTROCHEM. SOC USA, vol. 150, no. 6, June 2003 (2003-06-01), pages G339 - G347, XP002594705, ISSN: 0013-4651 *
MENG TAO ET AL: "Surface texturing by solution deposition for omnidirectional antireflection", APPLIED PHYSICS LETTERS AMERICAN INSTITUTE OF PHYSICS USA, vol. 91, no. 8, 20 August 2007 (2007-08-20), pages 081118 - 1, XP002594707, ISSN: 0003-6951 *
MOHAMED S H ET AL: "Structural and optical properties of direct current sputtered zinc aluminum oxides with a high Al concentration", THIN SOLID FILMS ELSEVIER SWITZERLAND, vol. 513, no. 1-2, 14 August 2006 (2006-08-14), pages 64 - 71, XP002594706, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
DE102009006718A1 (de) 2010-08-12
WO2010086135A2 (de) 2010-08-05

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