EP2348545A3 - Herstellungsverfahren für flexible Vorrichtung, flexible Vorrichtung, Solarzelle und lichtemittierende Vorrichtung - Google Patents

Herstellungsverfahren für flexible Vorrichtung, flexible Vorrichtung, Solarzelle und lichtemittierende Vorrichtung Download PDF

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Publication number
EP2348545A3
EP2348545A3 EP11151142.4A EP11151142A EP2348545A3 EP 2348545 A3 EP2348545 A3 EP 2348545A3 EP 11151142 A EP11151142 A EP 11151142A EP 2348545 A3 EP2348545 A3 EP 2348545A3
Authority
EP
European Patent Office
Prior art keywords
flexible
solar cell
flexible device
manufacturing
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11151142.4A
Other languages
English (en)
French (fr)
Other versions
EP2348545A2 (de
EP2348545B1 (de
Inventor
Keon Jae Lee
Sang Yong Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Advanced Institute of Science and Technology KAIST
SK Siltron Co Ltd
Original Assignee
Korea Advanced Institute of Science and Technology KAIST
LG Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Advanced Institute of Science and Technology KAIST, LG Siltron Inc filed Critical Korea Advanced Institute of Science and Technology KAIST
Publication of EP2348545A2 publication Critical patent/EP2348545A2/de
Publication of EP2348545A3 publication Critical patent/EP2348545A3/de
Application granted granted Critical
Publication of EP2348545B1 publication Critical patent/EP2348545B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
EP11151142.4A 2010-01-20 2011-01-17 Herstellungsverfahren für flexible vorrichtung, flexible vorrichtung, solarzelle und lichtemittierende vorrichtung Active EP2348545B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100005035A KR101149677B1 (ko) 2010-01-20 2010-01-20 플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자, 태양전지, ｌｅｄ

Publications (3)

Publication Number Publication Date
EP2348545A2 EP2348545A2 (de) 2011-07-27
EP2348545A3 true EP2348545A3 (de) 2016-09-28
EP2348545B1 EP2348545B1 (de) 2021-06-30

Family

ID=44022067

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11151142.4A Active EP2348545B1 (de) 2010-01-20 2011-01-17 Herstellungsverfahren für flexible vorrichtung, flexible vorrichtung, solarzelle und lichtemittierende vorrichtung

Country Status (3)

Country Link
US (1) US10566477B2 (de)
EP (1) EP2348545B1 (de)
KR (1) KR101149677B1 (de)

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DE102010049857A1 (de) * 2010-09-16 2012-03-22 Osram Opto Semiconductors Gmbh Verfahren zur Zusammenstellung von LEDs in einer Verpackungseinheit und Verpackungseinheit mit einer Vielzahl von LEDs
US20130082361A1 (en) * 2011-09-30 2013-04-04 Keon Jae Lee Manufacturing method for flexible device and flexible device manufactured by the same
KR101413163B1 (ko) * 2012-11-14 2014-06-30 재단법인대구경북과학기술원 유연 무기물 태양전지의 제조 방법
KR101440716B1 (ko) * 2013-01-10 2014-09-18 경희대학교 산학협력단 무기 박막 태양전지 제조 방법 및 이를 이용하여 제조된 무기 박막 태양전지
US9899556B2 (en) 2015-09-14 2018-02-20 Wisconsin Alumni Research Foundation Hybrid tandem solar cells with improved tunnel junction structures
KR102667851B1 (ko) * 2016-02-22 2024-05-23 삼성디스플레이 주식회사 디스플레이 장치
CN108231534A (zh) * 2016-12-15 2018-06-29 上海新微技术研发中心有限公司 柔性薄膜的制造方法
CN107070396B (zh) * 2017-04-14 2018-09-21 山东拜科通新材料科技有限公司 一种加工大面积柔性电路的方法
KR101980270B1 (ko) * 2017-06-13 2019-05-21 한국과학기술연구원 P형 반도체의 오믹 컨택 형성을 위한 페이스트 및 이를 이용한 p형 반도체의 오믹 컨택 형성 방법
WO2019088323A1 (ko) * 2017-11-03 2019-05-09 재단법인 다차원 스마트 아이티 융합시스템 연구단 전사 부재를 이용한 전자 소자의 적층 구조, 상기 전자 소자의 제작을 위한 전사 장비 및 상기 전자 소자의 제조 방법
CN108305919A (zh) * 2018-01-26 2018-07-20 平潭中科半导体技术联合研究中心 一种柔性发光薄膜及其制作方法
US10692996B1 (en) 2018-02-05 2020-06-23 United States Of America As Represented By The Secretary Of The Air Force Systems, methods and apparatus for radio frequency devices
KR102209403B1 (ko) 2018-12-11 2021-02-01 주식회사 포스코 다공성 폴리실록산 필름 제조방법, 이에 의해 제조된 다공성 폴리실록산 필름 및 이를 포함하는 태양광 모듈
WO2020171131A1 (ja) * 2019-02-22 2020-08-27 国立大学法人東京大学 有機半導体デバイス、有機半導体単結晶膜の製造方法、及び有機半導体デバイスの製造方法
CN111244229B (zh) * 2020-02-11 2021-07-06 信利半导体有限公司 一种可挠曲的透明薄膜太阳能电池制作方法

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US20010012677A1 (en) * 1997-09-16 2001-08-09 Toshiyuki Sameshima Semiconductor element forming process having a step of separating film structure from substrate
US20030134447A1 (en) * 2000-07-19 2003-07-17 Naoki Shibata Group III nitride compound semiconductor device
US6696325B1 (en) * 2003-02-27 2004-02-24 Toppoly Optoelectronics Corp. Method of transferring a thin film device onto a plastic sheet and method of forming a flexible liquid crystal display
WO2006033822A2 (en) * 2004-09-07 2006-03-30 Massachusetts Institute Of Technology Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
US20070128774A1 (en) * 2005-12-02 2007-06-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2008147105A2 (en) * 2007-05-30 2008-12-04 Wavesquare Inc. Manufacturing method of vertically structured gan led device

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US20070128774A1 (en) * 2005-12-02 2007-06-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2008147105A2 (en) * 2007-05-30 2008-12-04 Wavesquare Inc. Manufacturing method of vertically structured gan led device

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Also Published As

Publication number Publication date
EP2348545A2 (de) 2011-07-27
KR20110085317A (ko) 2011-07-27
EP2348545B1 (de) 2021-06-30
US10566477B2 (en) 2020-02-18
KR101149677B1 (ko) 2012-07-11
US20110174377A1 (en) 2011-07-21

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