WO2012110613A3 - Substrat verrier transparent conducteur pour cellule photovoltaique - Google Patents

Substrat verrier transparent conducteur pour cellule photovoltaique Download PDF

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Publication number
WO2012110613A3
WO2012110613A3 PCT/EP2012/052715 EP2012052715W WO2012110613A3 WO 2012110613 A3 WO2012110613 A3 WO 2012110613A3 EP 2012052715 W EP2012052715 W EP 2012052715W WO 2012110613 A3 WO2012110613 A3 WO 2012110613A3
Authority
WO
WIPO (PCT)
Prior art keywords
equal
photovoltaic cell
transparent glass
glass substrate
conductive transparent
Prior art date
Application number
PCT/EP2012/052715
Other languages
English (en)
Other versions
WO2012110613A2 (fr
Inventor
Bart BALLET
Otto AGUTSSON
Gaëtan DI STEFANO
Original Assignee
Agc Glass Europe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agc Glass Europe filed Critical Agc Glass Europe
Priority to EP12705650.5A priority Critical patent/EP2676296A2/fr
Priority to US14/000,040 priority patent/US20130319523A1/en
Publication of WO2012110613A2 publication Critical patent/WO2012110613A2/fr
Publication of WO2012110613A3 publication Critical patent/WO2012110613A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)

Abstract

ABREGE DESCRIPTIF Substrat verrier transparent conducteur pour cellule photovoltaïque L'invention concerne un substrat verrier transparent conducteur pour cellule photovoltaïque ne comportant pas de couche métallique etcomprenant successivement une feuille de verre, une couche barrière à base d'oxyde, de nitrure ou d'oxynitrure, une couche fonctionnelle conductrice à base d'oxyde de zinc dopé ou d'oxyde d'indium dopé et une couche de protection à base de nitrure, d'oxynitrure ou de d'oxycarburetel que la couche barrière a une épaisseur au moins supérieure ou égale à 10 nm et au plus inférieure ou égale à 100 nm, la couche fonctionnelle a une épaisseur au moins supérieure ou égale 200 nm et au plus inférieure ou égale à 1200 nm et la couche de protection a une épaisseur au moins supérieure ou égale à 10nmet au plus inférieure ou égale à 250 nm. L'invention concerne également le procédé de fabrication dudit substrat, les cellules photovoltaïquesà base de Cd Te incorporant ledit substrat ainsi que le procédé de fabrication des dites cellules.
PCT/EP2012/052715 2011-02-17 2012-02-16 Substrat verrier transparent conducteur pour cellule photovoltaique WO2012110613A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP12705650.5A EP2676296A2 (fr) 2011-02-17 2012-02-16 Substrat verrier transparent conducteur pour cellule photovoltaique
US14/000,040 US20130319523A1 (en) 2011-02-17 2012-02-16 Conductive transparent glass substrate for photovoltaic cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE2011/0104A BE1019826A3 (fr) 2011-02-17 2011-02-17 Substrat verrier transparent conducteur pour cellule photovoltaique.
BEBE2011/0104 2011-02-17

Publications (2)

Publication Number Publication Date
WO2012110613A2 WO2012110613A2 (fr) 2012-08-23
WO2012110613A3 true WO2012110613A3 (fr) 2013-04-04

Family

ID=45756986

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/052715 WO2012110613A2 (fr) 2011-02-17 2012-02-16 Substrat verrier transparent conducteur pour cellule photovoltaique

Country Status (4)

Country Link
US (1) US20130319523A1 (fr)
EP (1) EP2676296A2 (fr)
BE (1) BE1019826A3 (fr)
WO (1) WO2012110613A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140246083A1 (en) * 2013-03-01 2014-09-04 First Solar, Inc. Photovoltaic devices and method of making
KR101959712B1 (ko) * 2014-09-15 2019-03-19 생-고뱅 퍼포먼스 플라스틱스 코포레이션 적외선 흡수층을 포함하는 광학 필름
US20210204366A1 (en) * 2017-04-18 2021-07-01 Saint-Gobain Glass France Pane having heatable tco coating
CN114280702B (zh) * 2021-11-12 2024-04-30 福建戴斯光电有限公司 一种紫外金属膜层保护工艺及该紫外金属膜的保护层
CN116669448B (zh) * 2023-07-28 2024-02-13 淄博金晶新能源有限公司 钙钛矿太阳能电池用tco导电膜玻璃及其制备工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003093185A1 (fr) * 2002-05-06 2003-11-13 Glaverbel Substrat transparent comprenant une couche conductrice
US20070029186A1 (en) * 2005-08-02 2007-02-08 Alexey Krasnov Method of thermally tempering coated article with transparent conductive oxide (TCO) coating using inorganic protective layer during tempering and product made using same
US20080210303A1 (en) * 2006-11-02 2008-09-04 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080223436A1 (en) * 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
US20100288355A1 (en) * 2009-05-18 2010-11-18 First Solar, Inc. Silicon nitride diffusion barrier layer for cadmium stannate tco

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003093185A1 (fr) * 2002-05-06 2003-11-13 Glaverbel Substrat transparent comprenant une couche conductrice
US20070029186A1 (en) * 2005-08-02 2007-02-08 Alexey Krasnov Method of thermally tempering coated article with transparent conductive oxide (TCO) coating using inorganic protective layer during tempering and product made using same
US20080210303A1 (en) * 2006-11-02 2008-09-04 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080223436A1 (en) * 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
US20100288355A1 (en) * 2009-05-18 2010-11-18 First Solar, Inc. Silicon nitride diffusion barrier layer for cadmium stannate tco

Also Published As

Publication number Publication date
US20130319523A1 (en) 2013-12-05
BE1019826A3 (fr) 2013-01-08
EP2676296A2 (fr) 2013-12-25
WO2012110613A2 (fr) 2012-08-23

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