MX2011012338A - Estructura de oxido conductor transparente (tco) de estannato de cadmio con capa de barrera de difusion y capa de separacion. - Google Patents

Estructura de oxido conductor transparente (tco) de estannato de cadmio con capa de barrera de difusion y capa de separacion.

Info

Publication number
MX2011012338A
MX2011012338A MX2011012338A MX2011012338A MX2011012338A MX 2011012338 A MX2011012338 A MX 2011012338A MX 2011012338 A MX2011012338 A MX 2011012338A MX 2011012338 A MX2011012338 A MX 2011012338A MX 2011012338 A MX2011012338 A MX 2011012338A
Authority
MX
Mexico
Prior art keywords
diffusion barrier
cadmium stannate
barrier layer
layer
separation layer
Prior art date
Application number
MX2011012338A
Other languages
English (en)
Inventor
Dale Roberts
Yu Yang
Scott Mills
Zhibo Zhao
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of MX2011012338A publication Critical patent/MX2011012338A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Se describe un dispositivo fotovoltaico que puede incluir una capa transparente de óxido conductor adyacente a un sustrato y una o más capas de barrera, que pueden incluir un óxido de silicio o un nitruro de silicio.
MX2011012338A 2009-05-18 2010-05-12 Estructura de oxido conductor transparente (tco) de estannato de cadmio con capa de barrera de difusion y capa de separacion. MX2011012338A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17930309P 2009-05-18 2009-05-18
PCT/US2010/034581 WO2010135117A1 (en) 2009-05-18 2010-05-12 Cadmium stannate tco structure with diffusion barrier layer and separation layer

Publications (1)

Publication Number Publication Date
MX2011012338A true MX2011012338A (es) 2011-12-08

Family

ID=43067534

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2011012338A MX2011012338A (es) 2009-05-18 2010-05-12 Estructura de oxido conductor transparente (tco) de estannato de cadmio con capa de barrera de difusion y capa de separacion.

Country Status (6)

Country Link
US (1) US20100288354A1 (es)
EP (1) EP2433307A4 (es)
CN (1) CN102576743A (es)
MX (1) MX2011012338A (es)
TW (1) TW201101513A (es)
WO (1) WO2010135117A1 (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011005474A1 (en) * 2009-06-22 2011-01-13 First Solar, Inc. Method and apparatus for annealing a deposited cadmium stannate layer
WO2011084775A1 (en) * 2009-12-21 2011-07-14 First Solar, Inc. Photovoltaic device with buffer layer
WO2012012136A1 (en) * 2010-06-30 2012-01-26 First Solar, Inc Cadmium stannate sputter target
WO2012024557A2 (en) * 2010-08-20 2012-02-23 First Solar, Inc. Photovoltaic device front contact
US9276142B2 (en) 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
KR101262569B1 (ko) * 2011-07-29 2013-05-08 엘지이노텍 주식회사 태양전지 및 그의 제조방법
CN104051550A (zh) * 2013-03-14 2014-09-17 通用电气公司 光伏器件及其制造方法
CN105551582B (zh) * 2016-02-03 2018-08-28 张家港康得新光电材料有限公司 一种透明导电薄膜及具有该透明导电薄膜的触摸屏
CN106367720A (zh) * 2016-09-07 2017-02-01 中国科学院电工研究所 一种锡酸镉（cto）薄膜退火方法
CN109037391A (zh) * 2017-06-08 2018-12-18 龙焱能源科技（杭州）有限公司 一种锡酸镉透明导电膜、其生产工艺及太阳能电池
MY195818A (en) * 2017-11-16 2023-02-22 First Solar Inc Layer Structures for Photovoltaic Devices and Photovoltaic Devices Including The Same
US10741638B2 (en) * 2018-08-08 2020-08-11 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
CN110854239A (zh) * 2019-11-26 2020-02-28 龙焱能源科技（杭州）有限公司 一种薄膜太阳能电池及其制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US6784361B2 (en) * 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
US7585396B2 (en) * 2004-06-25 2009-09-08 Guardian Industries Corp. Coated article with ion treated overcoat layer and corresponding method
JP2006261057A (ja) * 2005-03-18 2006-09-28 Fuji Photo Film Co Ltd 有機電界発光素子
US20080053519A1 (en) * 2006-08-30 2008-03-06 Miasole Laminated photovoltaic cell
US20090320910A1 (en) * 2006-08-31 2009-12-31 Takuya Matsui Transparent electrode substrate for solar cell
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
CN101779290B (zh) * 2007-09-25 2013-02-27 第一太阳能有限公司 包括界面层的光伏器件
FR2932009B1 (fr) * 2008-06-02 2010-09-17 Saint Gobain Cellule photovoltaique et substrat de cellule photovoltaique

Also Published As

Publication number Publication date
TW201101513A (en) 2011-01-01
WO2010135117A1 (en) 2010-11-25
EP2433307A4 (en) 2012-10-31
EP2433307A1 (en) 2012-03-28
US20100288354A1 (en) 2010-11-18
CN102576743A (zh) 2012-07-11

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