MX2011012333A - Capa de barrera de difusion de nitruro de silicio para oxido conductor transparente (tco) de estannato de cadmio. - Google Patents

Capa de barrera de difusion de nitruro de silicio para oxido conductor transparente (tco) de estannato de cadmio.

Info

Publication number
MX2011012333A
MX2011012333A MX2011012333A MX2011012333A MX2011012333A MX 2011012333 A MX2011012333 A MX 2011012333A MX 2011012333 A MX2011012333 A MX 2011012333A MX 2011012333 A MX2011012333 A MX 2011012333A MX 2011012333 A MX2011012333 A MX 2011012333A
Authority
MX
Mexico
Prior art keywords
barrier layer
silicon nitride
diffusion barrier
cadmium stannate
nitride diffusion
Prior art date
Application number
MX2011012333A
Other languages
English (en)
Inventor
Dale Roberts
Yu Yang
Scott Mills
Zhibo Zhao
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of MX2011012333A publication Critical patent/MX2011012333A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Se describe un dispositivo fotovoltaico puede incluir una capa transparente de óxido conductor adyacente a un sustrato, y una capa de barrera, que puede incluir un material que contiene silicio.
MX2011012333A 2009-05-18 2010-05-12 Capa de barrera de difusion de nitruro de silicio para oxido conductor transparente (tco) de estannato de cadmio. MX2011012333A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17929809P 2009-05-18 2009-05-18
PCT/US2010/034585 WO2010135118A1 (en) 2009-05-18 2010-05-12 Silicon nitride diffusion barrier layer for cadmium stannate tco

Publications (1)

Publication Number Publication Date
MX2011012333A true MX2011012333A (es) 2011-12-08

Family

ID=43067535

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2011012333A MX2011012333A (es) 2009-05-18 2010-05-12 Capa de barrera de difusion de nitruro de silicio para oxido conductor transparente (tco) de estannato de cadmio.

Country Status (6)

Country Link
US (1) US20100288355A1 (es)
EP (1) EP2433308A4 (es)
CN (1) CN102804391A (es)
MX (1) MX2011012333A (es)
TW (1) TW201101514A (es)
WO (1) WO2010135118A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011084775A1 (en) * 2009-12-21 2011-07-14 First Solar, Inc. Photovoltaic device with buffer layer
CN102959120B9 (zh) * 2010-06-30 2018-08-21 第一太阳能有限公司 锡酸镉溅射靶
BE1019826A3 (fr) * 2011-02-17 2013-01-08 Agc Glass Europe Substrat verrier transparent conducteur pour cellule photovoltaique.
CN104321882A (zh) * 2011-10-17 2015-01-28 第一太阳能有限公司 用于光伏器件的混合型接触件和光伏器件的形成方法
EP2786421A4 (en) * 2011-11-30 2017-06-07 Corsam Technologies LLC Multi-junction photovoltaic modules incorporating ultra-thin flexible glass
US9065009B2 (en) 2012-04-10 2015-06-23 First Solar, Inc. Apparatus and method for forming a transparent conductive oxide layer over a substrate using a laser
CN104051550A (zh) * 2013-03-14 2014-09-17 通用电气公司 光伏器件及其制造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048372A (en) * 1976-02-27 1977-09-13 American Cyanamid Company Coating of cadmium stannate films onto plastic substrates
US4349425A (en) * 1977-09-09 1982-09-14 Hitachi, Ltd. Transparent conductive films and methods of producing same
US4532372A (en) * 1983-12-23 1985-07-30 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
US6784361B2 (en) * 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
US7563488B2 (en) * 2001-08-13 2009-07-21 Nv Bekaert Sa Process for the manufacturing of a sputter target
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US20050009228A1 (en) * 2001-12-13 2005-01-13 Xuanzhi Wu Semiconductor device with higher oxygen (02) concentration within window layers and method for making
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
JP2006261057A (ja) * 2005-03-18 2006-09-28 Fuji Photo Film Co Ltd 有機電界発光素子
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
US20080053519A1 (en) * 2006-08-30 2008-03-06 Miasole Laminated photovoltaic cell
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
WO2008128211A1 (en) * 2007-04-13 2008-10-23 Ziawatt Solar, Llc Layers that impede diffusion of metals in group vi element-containing materials
FR2932009B1 (fr) * 2008-06-02 2010-09-17 Saint Gobain Cellule photovoltaique et substrat de cellule photovoltaique

Also Published As

Publication number Publication date
EP2433308A4 (en) 2014-07-02
WO2010135118A1 (en) 2010-11-25
EP2433308A1 (en) 2012-03-28
US20100288355A1 (en) 2010-11-18
CN102804391A (zh) 2012-11-28
TW201101514A (en) 2011-01-01

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